CA934273A - Method for growth of a mixed crystal with controlled composition - Google Patents

Method for growth of a mixed crystal with controlled composition

Info

Publication number
CA934273A
CA934273A CA090986A CA90986A CA934273A CA 934273 A CA934273 A CA 934273A CA 090986 A CA090986 A CA 090986A CA 90986 A CA90986 A CA 90986A CA 934273 A CA934273 A CA 934273A
Authority
CA
Canada
Prior art keywords
growth
mixed crystal
controlled composition
composition
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA090986A
Inventor
J. Chicotka Richard
E. Blum Samuel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA934273A publication Critical patent/CA934273A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA090986A 1969-09-23 1970-08-18 Method for growth of a mixed crystal with controlled composition Expired CA934273A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86031669A 1969-09-23 1969-09-23

Publications (1)

Publication Number Publication Date
CA934273A true CA934273A (en) 1973-09-25

Family

ID=25332936

Family Applications (1)

Application Number Title Priority Date Filing Date
CA090986A Expired CA934273A (en) 1969-09-23 1970-08-18 Method for growth of a mixed crystal with controlled composition

Country Status (7)

Country Link
US (1) US3628998A (en)
JP (1) JPS4843427B1 (en)
CA (1) CA934273A (en)
DE (1) DE2038875A1 (en)
FR (1) FR2060931A5 (en)
GB (1) GB1270065A (en)
NL (1) NL7012602A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870473A (en) * 1970-09-02 1975-03-11 Hughes Aircraft Co Tandem furnace crystal growing device
US3767472A (en) * 1971-06-30 1973-10-23 Ibm Growth of ternary compounds utilizing solid, liquid and vapor phases
FR2175595B1 (en) * 1972-03-15 1974-09-13 Radiotechnique Compelec
JPS5148152B2 (en) * 1972-05-11 1976-12-18
US3880677A (en) * 1972-12-27 1975-04-29 Zaidan Hojin Handotai Kenkyu Method for producing a single crystal of In{hd x{b Ga{hd 1{118 x{b P
FR2416729A1 (en) * 1978-02-09 1979-09-07 Radiotechnique Compelec IMPROVEMENT OF THE MANUFACTURING PROCESS OF A III-V COMPOUND SINGLE CRYSTAL ''
JP3388664B2 (en) * 1995-12-28 2003-03-24 シャープ株式会社 Method and apparatus for manufacturing polycrystalline semiconductor
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447976A (en) * 1966-06-17 1969-06-03 Westinghouse Electric Corp Formation of heterojunction devices by epitaxial growth from solution
US3428438A (en) * 1966-11-14 1969-02-18 Hughes Aircraft Co Potassium tantalate niobate crystal growth from a melt
US3514265A (en) * 1967-04-05 1970-05-26 Us Army Method of growing strain-free single crystals

Also Published As

Publication number Publication date
JPS4843427B1 (en) 1973-12-18
NL7012602A (en) 1971-03-25
US3628998A (en) 1971-12-21
GB1270065A (en) 1972-04-12
DE2038875A1 (en) 1971-04-01
FR2060931A5 (en) 1971-06-18

Similar Documents

Publication Publication Date Title
CA954776A (en) Technique for growth of single crystal gallium garnet
CA934273A (en) Method for growth of a mixed crystal with controlled composition
AU1472970A (en) Plant growth regulating composition and process
CA935361A (en) Method of producing calcite single crystals
CA959283A (en) Method and composition for stimulating plant growth
AU460476B2 (en) Agents for regulating plant growth
CA997255A (en) Apparatus for growing single crystals
AU465310B2 (en) Method of operating aliquid crystal cell
AU2833571A (en) Compositions and process for regulating plant growth
CA957251A (en) Computerized process control system for the growth of synthetic quartz crystals
CA920835A (en) Method of regulating plant growth
AU2476071A (en) Plant growth regulating composition
CA937158A (en) Process for automatic control of crystal size distribution
CA941716A (en) Technique for the growth of single crystal lead molybdate
CA729096A (en) Method of growing crystals
AU459061B2 (en) Method for growing crystalline materials
AU422761B2 (en) Method of growing crystalline materials
AU4909169A (en) Method of growing crystalline materials
CA810159A (en) Method for producing homogeneous crystals of mixed semiconductive materials
AU430580B2 (en) Method of growing crystals
CA817384A (en) Method and apparatus for growing crystals
CA795749A (en) Method of growing single crystals
CA856196A (en) Method for growing crystals
CA866723A (en) Method of growing crystalline materials
CA825123A (en) Method of growing a hexagonal ferrite single crystal