JPS4843427B1 - - Google Patents
Info
- Publication number
- JPS4843427B1 JPS4843427B1 JP45082674A JP8267470A JPS4843427B1 JP S4843427 B1 JPS4843427 B1 JP S4843427B1 JP 45082674 A JP45082674 A JP 45082674A JP 8267470 A JP8267470 A JP 8267470A JP S4843427 B1 JPS4843427 B1 JP S4843427B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86031669A | 1969-09-23 | 1969-09-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4843427B1 true JPS4843427B1 (en) | 1973-12-18 |
Family
ID=25332936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP45082674A Pending JPS4843427B1 (en) | 1969-09-23 | 1970-09-22 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3628998A (en) |
| JP (1) | JPS4843427B1 (en) |
| CA (1) | CA934273A (en) |
| DE (1) | DE2038875A1 (en) |
| FR (1) | FR2060931A5 (en) |
| GB (1) | GB1270065A (en) |
| NL (1) | NL7012602A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870473A (en) * | 1970-09-02 | 1975-03-11 | Hughes Aircraft Co | Tandem furnace crystal growing device |
| US3767472A (en) * | 1971-06-30 | 1973-10-23 | Ibm | Growth of ternary compounds utilizing solid, liquid and vapor phases |
| FR2175595B1 (en) * | 1972-03-15 | 1974-09-13 | Radiotechnique Compelec | |
| JPS5148152B2 (en) * | 1972-05-11 | 1976-12-18 | ||
| US3880677A (en) * | 1972-12-27 | 1975-04-29 | Zaidan Hojin Handotai Kenkyu | Method for producing a single crystal of In{hd x{b Ga{hd 1{118 x{b P |
| FR2416729A1 (en) * | 1978-02-09 | 1979-09-07 | Radiotechnique Compelec | IMPROVEMENT OF THE MANUFACTURING PROCESS OF A III-V COMPOUND SINGLE CRYSTAL '' |
| JP3388664B2 (en) * | 1995-12-28 | 2003-03-24 | シャープ株式会社 | Method and apparatus for manufacturing polycrystalline semiconductor |
| US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
| US7959732B1 (en) * | 2005-06-17 | 2011-06-14 | Saint-Gobain Ceramics & Plastics, Inc. | Apparatus and method for monitoring and controlling crystal growth |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3447976A (en) * | 1966-06-17 | 1969-06-03 | Westinghouse Electric Corp | Formation of heterojunction devices by epitaxial growth from solution |
| US3428438A (en) * | 1966-11-14 | 1969-02-18 | Hughes Aircraft Co | Potassium tantalate niobate crystal growth from a melt |
| US3514265A (en) * | 1967-04-05 | 1970-05-26 | Us Army | Method of growing strain-free single crystals |
-
1969
- 1969-09-23 US US860316A patent/US3628998A/en not_active Expired - Lifetime
-
1970
- 1970-08-05 DE DE19702038875 patent/DE2038875A1/en active Pending
- 1970-08-10 FR FR7032135A patent/FR2060931A5/fr not_active Expired
- 1970-08-18 CA CA090986A patent/CA934273A/en not_active Expired
- 1970-08-26 NL NL7012602A patent/NL7012602A/xx not_active Application Discontinuation
- 1970-09-21 GB GB44809/70A patent/GB1270065A/en not_active Expired
- 1970-09-22 JP JP45082674A patent/JPS4843427B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2060931A5 (en) | 1971-06-18 |
| GB1270065A (en) | 1972-04-12 |
| CA934273A (en) | 1973-09-25 |
| US3628998A (en) | 1971-12-21 |
| DE2038875A1 (en) | 1971-04-01 |
| NL7012602A (en) | 1971-03-25 |