GB1270065A - Method for growing a mixed crystal with controlled composition - Google Patents

Method for growing a mixed crystal with controlled composition

Info

Publication number
GB1270065A
GB1270065A GB44809/70A GB4480970A GB1270065A GB 1270065 A GB1270065 A GB 1270065A GB 44809/70 A GB44809/70 A GB 44809/70A GB 4480970 A GB4480970 A GB 4480970A GB 1270065 A GB1270065 A GB 1270065A
Authority
GB
United Kingdom
Prior art keywords
component
inp
gap
melt
mixed crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44809/70A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1270065A publication Critical patent/GB1270065A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,270,065. Mixed crystals. INTERNATIONAL BUSINESS MACHINES CORP. 21 Sept., 1970 [23 Sept., 1969], No. 44809/70. Heading BIG. Mixed crystals are grown from a melt containing one component on to a seed of the other, the melt being supplied with the second component by contacting it with the solid form of this component at another point. The melt has the composition from which a solid of the desired mole fractions of its components will be precipitated on freezing, and is maintained at this composition by equilibriating it at constant temperature with the second component source. The temperature at the point of contact between the liquid and the seed is controlled to permit freezing, and hence crystal growth to occur. By varying the equilibrium temperature, it is possible to prepare mixed crystals whose composition varies either gradually or stepwise in the growth direction. In the embodiment described a mixed crystal of GaP and InP is prepared. The lower melting compound, InP, is sandwiched between two layers of Gap, the InP melted and equilibrated with the GaP, the lower interface cooled to permit crystal growth and the ensemble slowly lowered through a cooled zone so that growth occurs upwards. Additional phosphorus vapour is supplied to keep the vapour pressure equal to or above the dissociation pressure of the phosphorus. The process may also be used for ternary &c systems.
GB44809/70A 1969-09-23 1970-09-21 Method for growing a mixed crystal with controlled composition Expired GB1270065A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86031669A 1969-09-23 1969-09-23

Publications (1)

Publication Number Publication Date
GB1270065A true GB1270065A (en) 1972-04-12

Family

ID=25332936

Family Applications (1)

Application Number Title Priority Date Filing Date
GB44809/70A Expired GB1270065A (en) 1969-09-23 1970-09-21 Method for growing a mixed crystal with controlled composition

Country Status (7)

Country Link
US (1) US3628998A (en)
JP (1) JPS4843427B1 (en)
CA (1) CA934273A (en)
DE (1) DE2038875A1 (en)
FR (1) FR2060931A5 (en)
GB (1) GB1270065A (en)
NL (1) NL7012602A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870473A (en) * 1970-09-02 1975-03-11 Hughes Aircraft Co Tandem furnace crystal growing device
US3767472A (en) * 1971-06-30 1973-10-23 Ibm Growth of ternary compounds utilizing solid, liquid and vapor phases
FR2175595B1 (en) * 1972-03-15 1974-09-13 Radiotechnique Compelec
JPS5148152B2 (en) * 1972-05-11 1976-12-18
US3880677A (en) * 1972-12-27 1975-04-29 Zaidan Hojin Handotai Kenkyu Method for producing a single crystal of In{hd x{b Ga{hd 1{118 x{b P
FR2416729A1 (en) * 1978-02-09 1979-09-07 Radiotechnique Compelec IMPROVEMENT OF THE MANUFACTURING PROCESS OF A III-V COMPOUND SINGLE CRYSTAL ''
JP3388664B2 (en) * 1995-12-28 2003-03-24 シャープ株式会社 Method and apparatus for manufacturing polycrystalline semiconductor
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447976A (en) * 1966-06-17 1969-06-03 Westinghouse Electric Corp Formation of heterojunction devices by epitaxial growth from solution
US3428438A (en) * 1966-11-14 1969-02-18 Hughes Aircraft Co Potassium tantalate niobate crystal growth from a melt
US3514265A (en) * 1967-04-05 1970-05-26 Us Army Method of growing strain-free single crystals

Also Published As

Publication number Publication date
FR2060931A5 (en) 1971-06-18
CA934273A (en) 1973-09-25
US3628998A (en) 1971-12-21
DE2038875A1 (en) 1971-04-01
NL7012602A (en) 1971-03-25
JPS4843427B1 (en) 1973-12-18

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