NL7012602A - - Google Patents

Info

Publication number
NL7012602A
NL7012602A NL7012602A NL7012602A NL7012602A NL 7012602 A NL7012602 A NL 7012602A NL 7012602 A NL7012602 A NL 7012602A NL 7012602 A NL7012602 A NL 7012602A NL 7012602 A NL7012602 A NL 7012602A
Authority
NL
Netherlands
Application number
NL7012602A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7012602A publication Critical patent/NL7012602A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7012602A 1969-09-23 1970-08-26 NL7012602A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86031669A 1969-09-23 1969-09-23

Publications (1)

Publication Number Publication Date
NL7012602A true NL7012602A (xx) 1971-03-25

Family

ID=25332936

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7012602A NL7012602A (xx) 1969-09-23 1970-08-26

Country Status (7)

Country Link
US (1) US3628998A (xx)
JP (1) JPS4843427B1 (xx)
CA (1) CA934273A (xx)
DE (1) DE2038875A1 (xx)
FR (1) FR2060931A5 (xx)
GB (1) GB1270065A (xx)
NL (1) NL7012602A (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870473A (en) * 1970-09-02 1975-03-11 Hughes Aircraft Co Tandem furnace crystal growing device
US3767472A (en) * 1971-06-30 1973-10-23 Ibm Growth of ternary compounds utilizing solid, liquid and vapor phases
FR2175595B1 (xx) * 1972-03-15 1974-09-13 Radiotechnique Compelec
JPS5148152B2 (xx) * 1972-05-11 1976-12-18
US3880677A (en) * 1972-12-27 1975-04-29 Zaidan Hojin Handotai Kenkyu Method for producing a single crystal of In{hd x{b Ga{hd 1{118 x{b P
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
JP3388664B2 (ja) * 1995-12-28 2003-03-24 シャープ株式会社 多結晶半導体の製造方法および製造装置
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447976A (en) * 1966-06-17 1969-06-03 Westinghouse Electric Corp Formation of heterojunction devices by epitaxial growth from solution
US3428438A (en) * 1966-11-14 1969-02-18 Hughes Aircraft Co Potassium tantalate niobate crystal growth from a melt
US3514265A (en) * 1967-04-05 1970-05-26 Us Army Method of growing strain-free single crystals

Also Published As

Publication number Publication date
FR2060931A5 (xx) 1971-06-18
GB1270065A (en) 1972-04-12
CA934273A (en) 1973-09-25
US3628998A (en) 1971-12-21
DE2038875A1 (de) 1971-04-01
JPS4843427B1 (xx) 1973-12-18

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Legal Events

Date Code Title Description
BV The patent application has lapsed