DE69324849D1 - Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung - Google Patents

Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung

Info

Publication number
DE69324849D1
DE69324849D1 DE69324849T DE69324849T DE69324849D1 DE 69324849 D1 DE69324849 D1 DE 69324849D1 DE 69324849 T DE69324849 T DE 69324849T DE 69324849 T DE69324849 T DE 69324849T DE 69324849 D1 DE69324849 D1 DE 69324849D1
Authority
DE
Germany
Prior art keywords
plasma
vapor deposition
chemical vapor
assisted chemical
assisted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324849T
Other languages
English (en)
Other versions
DE69324849T2 (de
Inventor
Masayoshi Murata
Yoshiaki Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4096615A external-priority patent/JPH05299680A/ja
Priority claimed from JP11333692A external-priority patent/JPH05311447A/ja
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Publication of DE69324849D1 publication Critical patent/DE69324849D1/de
Application granted granted Critical
Publication of DE69324849T2 publication Critical patent/DE69324849T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3325—Problems associated with coating large area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3326—Problems associated with coating high speed

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE69324849T 1992-04-16 1993-03-22 Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung Expired - Fee Related DE69324849T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4096615A JPH05299680A (ja) 1992-04-16 1992-04-16 プラズマｃｖｄ法およびその装置
JP11333692A JPH05311447A (ja) 1992-05-06 1992-05-06 プラズマｃｖｄ法及びその装置

Publications (2)

Publication Number Publication Date
DE69324849D1 true DE69324849D1 (de) 1999-06-17
DE69324849T2 DE69324849T2 (de) 1999-09-23

Family

ID=26437791

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324849T Expired - Fee Related DE69324849T2 (de) 1992-04-16 1993-03-22 Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung

Country Status (4)

Country Link
US (1) US5423915A (de)
EP (1) EP0574100B1 (de)
CA (1) CA2092756C (de)
DE (1) DE69324849T2 (de)

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JP3124204B2 (ja) * 1994-02-28 2001-01-15 株式会社東芝 プラズマ処理装置
US5591268A (en) * 1994-10-14 1997-01-07 Fujitsu Limited Plasma process with radicals
US5858477A (en) * 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
US6097157A (en) * 1998-04-09 2000-08-01 Board Of Regents, The University Of Texas System System for ion energy control during plasma processing
US6545580B2 (en) 1998-09-09 2003-04-08 Veeco Instruments, Inc. Electromagnetic field generator and method of operation
DE10018015A1 (de) * 2000-04-11 2001-10-25 Infineon Technologies Ag Anordnung zur Durchführung eines plasmabasierten Verfahrens
TW511158B (en) * 2000-08-11 2002-11-21 Alps Electric Co Ltd Plasma processing apparatus and system, performance validation system thereof
US6459066B1 (en) 2000-08-25 2002-10-01 Board Of Regents, The University Of Texas System Transmission line based inductively coupled plasma source with stable impedance
US6875700B2 (en) * 2000-08-29 2005-04-05 Board Of Regents, The University Of Texas System Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
JP4091310B2 (ja) * 2001-02-15 2008-05-28 株式会社カネカ シリコン薄膜太陽電池の製造方法
US7471068B2 (en) * 2006-11-03 2008-12-30 Ivus Industries, Llc Ultra-fast ultracapacitor charging method and charger
FR2926161B1 (fr) * 2008-01-04 2012-02-10 Horiba Jobin Yvon Sas Source magnetron pour spectrometre a decharge luminescente.
KR20120042748A (ko) 2009-05-13 2012-05-03 씨브이 홀딩스 엘엘씨 코팅된 표면 검사를 위한 가스제거 방법
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
JP6095678B2 (ja) 2011-11-11 2017-03-15 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 薬剤パッケージ用の不動態化、ｐＨ保護又は滑性皮膜、被覆プロセス及び装置
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
EP2846755A1 (de) 2012-05-09 2015-03-18 SiO2 Medical Products, Inc. Saccharidschutzschicht für eine arzneimittelverpackung
CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
EP2920567B1 (de) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Verfahren und vorrichtung zur erkennung von schnellen sperrbeschichtungsintegritätseigenschaften
US9121540B2 (en) 2012-11-21 2015-09-01 Southwest Research Institute Superhydrophobic compositions and coating process for the internal surface of tubular structures
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
WO2014085346A1 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Hollow body with inside coating
EP2961858B1 (de) 2013-03-01 2022-09-07 Si02 Medical Products, Inc. Beschichtete spritze.
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
CA2904611C (en) 2013-03-11 2021-11-23 Sio2 Medical Products, Inc. Coated packaging
EP2971227B1 (de) 2013-03-15 2017-11-15 Si02 Medical Products, Inc. Beschichtungsverfahren.
US11066745B2 (en) 2014-03-28 2021-07-20 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
CA2995225C (en) 2015-08-18 2023-08-29 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
CA3030308C (en) 2016-07-29 2022-04-05 The Board Of Trustees Of Western Michigan University Magnetic nanoparticle-based gyroscopic sensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3580953D1 (de) * 1984-08-31 1991-01-31 Anelva Corp Entladungsvorrichtung.
DE3750349T2 (de) * 1986-05-09 1994-12-15 Mitsubishi Heavy Ind Ltd Anordnung zur Herstellung von Dünnschichten.
JPH0760798B2 (ja) * 1986-05-09 1995-06-28 三菱重工業株式会社 非晶質薄膜形成方法および装置
JPS6393881A (ja) * 1986-10-08 1988-04-25 Anelva Corp プラズマ処理装置
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
JPH0830275B2 (ja) * 1987-03-31 1996-03-27 日本真空技術株式会社 回転磁場型マグネトロンエツチング装置
US4740268A (en) * 1987-05-04 1988-04-26 Motorola Inc. Magnetically enhanced plasma system
JP2812477B2 (ja) * 1989-03-10 1998-10-22 三菱電機株式会社 半導体処理装置
JPH0727894B2 (ja) * 1990-01-29 1995-03-29 アプライドマテリアルズジャパン株式会社 回転磁界を用いた放電反応装置
JP2785442B2 (ja) * 1990-05-15 1998-08-13 三菱重工業株式会社 プラズマｃｖｄ装置
US5089442A (en) * 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd

Also Published As

Publication number Publication date
EP0574100A3 (en) 1996-01-17
CA2092756C (en) 1999-08-03
DE69324849T2 (de) 1999-09-23
EP0574100A2 (de) 1993-12-15
US5423915A (en) 1995-06-13
EP0574100B1 (de) 1999-05-12
CA2092756A1 (en) 1993-10-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee