DE69633770D1 - Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung dünner Schichten - Google Patents
Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung dünner SchichtenInfo
- Publication number
- DE69633770D1 DE69633770D1 DE69633770T DE69633770T DE69633770D1 DE 69633770 D1 DE69633770 D1 DE 69633770D1 DE 69633770 T DE69633770 T DE 69633770T DE 69633770 T DE69633770 T DE 69633770T DE 69633770 D1 DE69633770 D1 DE 69633770D1
- Authority
- DE
- Germany
- Prior art keywords
- vapor deposition
- chemical vapor
- thin layers
- layers
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US56824195A | 1995-12-06 | 1995-12-06 | |
US568241 | 1995-12-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69633770D1 true DE69633770D1 (de) | 2004-12-09 |
DE69633770T2 DE69633770T2 (de) | 2005-10-27 |
Family
ID=24270506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69633770T Expired - Lifetime DE69633770T2 (de) | 1995-12-06 | 1996-12-05 | Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung dünner Schichten |
Country Status (5)
Country | Link |
---|---|
US (2) | US6009827A (de) |
EP (1) | EP0778358B1 (de) |
JP (1) | JP3607438B2 (de) |
KR (1) | KR100308447B1 (de) |
DE (1) | DE69633770T2 (de) |
Families Citing this family (50)
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DE19528746C1 (de) * | 1995-08-04 | 1996-10-31 | Siemens Ag | Verfahren zum Erzeugen einer Siliziumdioxidschicht auf Oberflächenabschnitten einer Struktur |
US6149974A (en) * | 1997-05-05 | 2000-11-21 | Applied Materials, Inc. | Method for elimination of TEOS/ozone silicon oxide surface sensitivity |
US6872429B1 (en) * | 1997-06-30 | 2005-03-29 | Applied Materials, Inc. | Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber |
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US6194038B1 (en) * | 1998-03-20 | 2001-02-27 | Applied Materials, Inc. | Method for deposition of a conformal layer on a substrate |
US6218268B1 (en) * | 1998-05-05 | 2001-04-17 | Applied Materials, Inc. | Two-step borophosphosilicate glass deposition process and related devices and apparatus |
EP0959496B1 (de) * | 1998-05-22 | 2006-07-19 | Applied Materials, Inc. | Verfahren zur Herstellung einer selbst-planarisierten dielektrischen Schicht für eine seichte Grabenisolation |
US6245691B1 (en) * | 1998-05-29 | 2001-06-12 | Taiwan Semiconductor Manufacturing Company | Ozone-teos method for forming with attenuated surface sensitivity a silicon oxide dielectric layer upon a thermally oxidized silicon substrate layer |
US6156597A (en) * | 1998-06-09 | 2000-12-05 | Promos Technologies, Inc. | Additional buffer layer for eliminating ozone/tetraethylorthosilicate sensitivity on an arbitrary trench structure |
US6384466B1 (en) * | 1998-08-27 | 2002-05-07 | Micron Technology, Inc. | Multi-layer dielectric and method of forming same |
US6727190B2 (en) * | 1998-09-03 | 2004-04-27 | Micron Technology, Inc. | Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials |
WO2000015870A1 (en) * | 1998-09-14 | 2000-03-23 | Applied Materials, Inc. | Wafer processing reactor system with programmable processing parameters and method |
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US6468490B1 (en) | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
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US6291331B1 (en) | 1999-10-04 | 2001-09-18 | Taiwan Semiconductor Manufacturing Company | Re-deposition high compressive stress PECVD oxide film after IMD CMP process to solve more than 5 metal stack via process IMD crack issue |
TW535192B (en) * | 1999-11-16 | 2003-06-01 | Tokyo Electron Ltd | Substrate processing unit and processing method |
EP1139403A1 (de) * | 2000-03-27 | 2001-10-04 | Infineon Technologies AG | Verfahren zur Abscheidung von dotiertem Siliziumoxid |
KR100397177B1 (ko) * | 2001-04-19 | 2003-09-06 | 삼성전자주식회사 | 절연막 제조 방법 및 반도체 장치의 제조 방법 |
US6730619B2 (en) * | 2000-06-15 | 2004-05-04 | Samsung Electronics Co., Ltd. | Method of manufacturing insulating layer and semiconductor device including insulating layer |
US6362098B1 (en) | 2001-02-28 | 2002-03-26 | Motorola, Inc. | Plasma-enhanced chemical vapor deposition (CVD) method to fill a trench in a semiconductor substrate |
US6488745B2 (en) | 2001-03-23 | 2002-12-03 | Mks Instruments, Inc. | Trap apparatus and method for condensable by-products of deposition reactions |
JP5175414B2 (ja) * | 2001-06-27 | 2013-04-03 | アプライド マテリアルズ インコーポレイテッド | 膜形成方法及び装置 |
US6893983B2 (en) * | 2001-09-13 | 2005-05-17 | Tech Semiconductor Singapore Pte Ltd. | Method for depositing a very high phosphorus doped silicon oxide film |
US20030111438A1 (en) * | 2001-12-18 | 2003-06-19 | Mukai Kevin M. | Process operation supplementation with oxygen |
JP4154471B2 (ja) * | 2002-11-15 | 2008-09-24 | 富士通株式会社 | 半導体装置の製造方法 |
US7569193B2 (en) * | 2003-12-19 | 2009-08-04 | Applied Materials, Inc. | Apparatus and method for controlled combustion of gaseous pollutants |
US20050136684A1 (en) * | 2003-12-23 | 2005-06-23 | Applied Materials, Inc. | Gap-fill techniques |
KR100533646B1 (ko) * | 2004-05-11 | 2005-12-05 | 동부아남반도체 주식회사 | 피엠디막 형성 방법 |
US7736599B2 (en) * | 2004-11-12 | 2010-06-15 | Applied Materials, Inc. | Reactor design to reduce particle deposition during process abatement |
KR20060063188A (ko) * | 2004-12-07 | 2006-06-12 | 삼성전자주식회사 | 화학기상증착장치 및 그를 이용한 화학기상증착방법 |
JP4849863B2 (ja) * | 2005-10-14 | 2012-01-11 | 株式会社明電舎 | 酸化膜形成方法 |
JP5102217B2 (ja) * | 2005-10-31 | 2012-12-19 | アプライド マテリアルズ インコーポレイテッド | プロセス削減反応器 |
JP4674544B2 (ja) * | 2005-12-27 | 2011-04-20 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
KR100688023B1 (ko) * | 2005-12-28 | 2007-02-27 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7371695B2 (en) * | 2006-01-04 | 2008-05-13 | Promos Technologies Pte. Ltd. | Use of TEOS oxides in integrated circuit fabrication processes |
JP4524300B2 (ja) * | 2007-08-10 | 2010-08-11 | 東京エレクトロン株式会社 | 成膜方法 |
DE102007046847B4 (de) * | 2007-09-29 | 2010-04-22 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Zwischenschichtdielektrikums mit verspannten Materialien |
JP4695158B2 (ja) * | 2008-04-23 | 2011-06-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7955993B2 (en) * | 2009-06-04 | 2011-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Oxygen plasma reduction to eliminate precursor overflow in BPTEOS film deposition |
US20120058281A1 (en) * | 2010-03-12 | 2012-03-08 | Applied Materials, Inc. | Methods for forming low moisture dielectric films |
US20130200519A1 (en) * | 2012-02-02 | 2013-08-08 | Ji Feng | Through silicon via structure and method of fabricating the same |
US8956704B2 (en) | 2012-05-21 | 2015-02-17 | Novellus Systems, Inc. | Methods for modulating step coverage during conformal film deposition |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
TW201437423A (zh) * | 2013-02-21 | 2014-10-01 | Applied Materials Inc | 用於注射器至基板的空隙控制之裝置及方法 |
KR20160147482A (ko) * | 2015-06-15 | 2016-12-23 | 삼성전자주식회사 | 가스 혼합부를 갖는 반도체 소자 제조 설비 |
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US5271972A (en) * | 1992-08-17 | 1993-12-21 | Applied Materials, Inc. | Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity |
US5393708A (en) * | 1992-10-08 | 1995-02-28 | Industrial Technology Research Institute | Inter-metal-dielectric planarization process |
JP2684942B2 (ja) * | 1992-11-30 | 1997-12-03 | 日本電気株式会社 | 化学気相成長法と化学気相成長装置および多層配線の製造方法 |
JPH086181B2 (ja) * | 1992-11-30 | 1996-01-24 | 日本電気株式会社 | 化学気相成長法および化学気相成長装置 |
US5502006A (en) * | 1993-11-02 | 1996-03-26 | Nippon Steel Corporation | Method for forming electrical contacts in a semiconductor device |
JPH0878406A (ja) * | 1994-09-08 | 1996-03-22 | Sony Corp | 酸化膜の成膜方法 |
-
1996
- 1996-11-05 US US08/740,969 patent/US6009827A/en not_active Expired - Lifetime
- 1996-11-19 JP JP30821896A patent/JP3607438B2/ja not_active Expired - Fee Related
- 1996-11-28 KR KR1019960058642A patent/KR100308447B1/ko not_active IP Right Cessation
- 1996-12-05 DE DE69633770T patent/DE69633770T2/de not_active Expired - Lifetime
- 1996-12-05 EP EP96308855A patent/EP0778358B1/de not_active Expired - Lifetime
-
1997
- 1997-07-08 US US08/889,703 patent/US5814377A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100308447B1 (ko) | 2001-11-30 |
DE69633770T2 (de) | 2005-10-27 |
US5814377A (en) | 1998-09-29 |
JPH09172008A (ja) | 1997-06-30 |
JP3607438B2 (ja) | 2005-01-05 |
EP0778358B1 (de) | 2004-11-03 |
US6009827A (en) | 2000-01-04 |
EP0778358A1 (de) | 1997-06-11 |
KR970052913A (ko) | 1997-07-29 |
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