DE69611952D1 - Vorrichtung zur Gasphasenabscheidung dünner Schichten - Google Patents

Vorrichtung zur Gasphasenabscheidung dünner Schichten

Info

Publication number
DE69611952D1
DE69611952D1 DE69611952T DE69611952T DE69611952D1 DE 69611952 D1 DE69611952 D1 DE 69611952D1 DE 69611952 T DE69611952 T DE 69611952T DE 69611952 T DE69611952 T DE 69611952T DE 69611952 D1 DE69611952 D1 DE 69611952D1
Authority
DE
Germany
Prior art keywords
vapor deposition
thin layers
layers
thin
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69611952T
Other languages
English (en)
Other versions
DE69611952T2 (de
Inventor
Hiroyuki Shinozaki
Yukio Fukunaga
Takeshi Murakami
Kiwamu Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17433895A external-priority patent/JPH093649A/ja
Priority claimed from JP17433795A external-priority patent/JPH093648A/ja
Priority claimed from JP17433995A external-priority patent/JPH093650A/ja
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of DE69611952D1 publication Critical patent/DE69611952D1/de
Publication of DE69611952T2 publication Critical patent/DE69611952T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE69611952T 1995-06-16 1996-06-14 Vorrichtung zur Gasphasenabscheidung dünner Schichten Expired - Fee Related DE69611952T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP17433895A JPH093649A (ja) 1995-06-16 1995-06-16 薄膜気相成長装置
JP17433795A JPH093648A (ja) 1995-06-16 1995-06-16 薄膜気相成長装置
JP17433995A JPH093650A (ja) 1995-06-16 1995-06-16 薄膜気相成長装置

Publications (2)

Publication Number Publication Date
DE69611952D1 true DE69611952D1 (de) 2001-04-12
DE69611952T2 DE69611952T2 (de) 2001-09-20

Family

ID=27323925

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69611952T Expired - Fee Related DE69611952T2 (de) 1995-06-16 1996-06-14 Vorrichtung zur Gasphasenabscheidung dünner Schichten

Country Status (5)

Country Link
US (1) US6022413A (de)
EP (1) EP0748881B1 (de)
KR (1) KR100427427B1 (de)
DE (1) DE69611952T2 (de)
TW (1) TW331652B (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6105223A (en) * 1997-04-30 2000-08-22 The B. F. Goodrich Company Simplified process for making thick fibrous structures
DE19737548A1 (de) * 1997-08-28 1999-03-04 Inst Oberflaechenmodifizierung Kipp-, rotier- und thermostatierbare Substratstation zum Ionenstrahlätzen
JP3758009B2 (ja) * 1998-07-01 2006-03-22 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
ATE251340T1 (de) * 1999-04-27 2003-10-15 Decker Gmbh & Co Kg Geb Behandlungsvorrichtung für silizium-scheiben
CH693748A5 (de) * 1999-05-04 2004-01-15 Satis Vacuum Ind Vetriebs Ag Vakuum-Beschichtungsanlage zum Aufdampfen von Verguetungsschichten auf optische Substrate.
TW466576B (en) * 1999-06-15 2001-12-01 Ebara Corp Substrate processing apparatus
JP3923696B2 (ja) 1999-07-19 2007-06-06 株式会社荏原製作所 基板回転装置
DE19940033A1 (de) * 1999-08-24 2001-05-17 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Schichten auf rotierenden Substraten in einem allseits beheizten Strömungskanal
US6432206B1 (en) * 1999-08-30 2002-08-13 Si Diamond Technology, Inc. Heating element for use in a hot filament chemical vapor deposition chamber
US6582780B1 (en) * 1999-08-30 2003-06-24 Si Diamond Technology, Inc. Substrate support for use in a hot filament chemical vapor deposition chamber
JP4232330B2 (ja) * 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
DE10055182A1 (de) 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
US6770146B2 (en) * 2001-02-02 2004-08-03 Mattson Technology, Inc. Method and system for rotating a semiconductor wafer in processing chambers
SE0101012D0 (sv) * 2001-03-23 2001-03-23 Abb Research Ltd A device for epitaxially growing objects by CVD
US6619304B2 (en) * 2001-09-13 2003-09-16 Micell Technologies, Inc. Pressure chamber assembly including non-mechanical drive means
US7008497B2 (en) * 2002-08-22 2006-03-07 Zuiko Corporation Method and apparatus for producing wearing article
KR20050061511A (ko) * 2002-10-03 2005-06-22 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 에피택셜층을 형성하는 방법 및 장치
JP2006179613A (ja) * 2004-12-21 2006-07-06 Rigaku Corp 半導体ウエハ縦型熱処理装置用磁性流体シールユニット
KR20060103640A (ko) * 2005-03-28 2006-10-04 삼성전자주식회사 반도체 제조장치
WO2008082883A1 (en) * 2006-12-28 2008-07-10 Exatec Llc Method and apparatus for stabilizing a coating
US8673080B2 (en) * 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
WO2010038674A1 (ja) * 2008-09-30 2010-04-08 東京エレクトロン株式会社 基板の異常載置状態の検知方法、基板処理方法、コンピュータ読み取り可能な記憶媒体および基板処理装置
KR101365202B1 (ko) * 2009-11-02 2014-02-20 엘아이지에이디피 주식회사 화학기상증착장치의 온도제어방법
US9034142B2 (en) * 2009-12-18 2015-05-19 Novellus Systems, Inc. Temperature controlled showerhead for high temperature operations
KR101937115B1 (ko) 2011-03-04 2019-01-09 노벨러스 시스템즈, 인코포레이티드 하이브리드 세라믹 샤워헤드
US9793144B2 (en) * 2011-08-30 2017-10-17 Evatec Ag Wafer holder and temperature conditioning arrangement and method of manufacturing a wafer
JP6184479B2 (ja) * 2012-05-18 2017-08-23 ビーコ インストゥルメンツ インコーポレイテッド 化学蒸着のための強磁性流体シールを有する回転円盤反応器
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
CN114156196A (zh) * 2020-09-07 2022-03-08 江苏鲁汶仪器有限公司 一种离子束刻蚀机及其升降旋转台装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086821A (ja) * 1983-10-19 1985-05-16 Hitachi Ltd 薄膜形成装置
US4902531A (en) * 1986-10-30 1990-02-20 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum processing method and apparatus
GB8729262D0 (en) * 1987-12-15 1988-01-27 Vg Instr Group Sample treatment apparatus
DE3803411A1 (de) * 1988-02-05 1989-08-17 Leybold Ag Vorrichtung zur halterung von werkstuecken
GB8811489D0 (en) * 1988-05-14 1988-06-15 Darlington P R Animal handling apparatus
JPH0687463B2 (ja) * 1989-08-24 1994-11-02 株式会社東芝 半導体気相成長装置
JPH03270012A (ja) * 1990-03-19 1991-12-02 Fujitsu Ltd 半導体製造装置
DE69206872T2 (de) * 1991-05-08 1996-07-25 Koyo Seiko Co Magnetische Antriebsvorrichtung
JP2652592B2 (ja) * 1991-05-17 1997-09-10 日本スカイロボット株式会社 伸縮柱等の進退機構
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JPH0758036A (ja) * 1993-08-16 1995-03-03 Ebara Corp 薄膜形成装置
JPH08111370A (ja) * 1994-10-12 1996-04-30 Mitsubishi Electric Corp 微細レジストパターンの形成方法およびポストエキスポージャーベーク装置
JP3380091B2 (ja) * 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置

Also Published As

Publication number Publication date
TW331652B (en) 1998-05-11
KR100427427B1 (ko) 2004-07-12
US6022413A (en) 2000-02-08
EP0748881B1 (de) 2001-03-07
EP0748881A1 (de) 1996-12-18
DE69611952T2 (de) 2001-09-20
KR970003436A (ko) 1997-01-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee