DE69629412D1 - Anlage zur Dampfabscheidung von Dünnschichten - Google Patents

Anlage zur Dampfabscheidung von Dünnschichten

Info

Publication number
DE69629412D1
DE69629412D1 DE69629412T DE69629412T DE69629412D1 DE 69629412 D1 DE69629412 D1 DE 69629412D1 DE 69629412 T DE69629412 T DE 69629412T DE 69629412 T DE69629412 T DE 69629412T DE 69629412 D1 DE69629412 D1 DE 69629412D1
Authority
DE
Germany
Prior art keywords
plant
vapor deposition
thin layers
layers
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69629412T
Other languages
English (en)
Other versions
DE69629412T2 (de
Inventor
Noriyuki Takeuchi
Takeshi Murakami
Hiroyuki Shinozaki
Kiwamu Tsukamoto
Masaru Nakaniwa
Naoki Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of DE69629412D1 publication Critical patent/DE69629412D1/de
Application granted granted Critical
Publication of DE69629412T2 publication Critical patent/DE69629412T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
DE69629412T 1995-04-20 1996-04-19 Anlage zur Dampfabscheidung von Dünnschichten Expired - Fee Related DE69629412T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11926095 1995-04-20
JP11925995 1995-04-20
JP11925995 1995-04-20
JP11926095 1995-04-20

Publications (2)

Publication Number Publication Date
DE69629412D1 true DE69629412D1 (de) 2003-09-18
DE69629412T2 DE69629412T2 (de) 2004-06-24

Family

ID=26457039

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69629412T Expired - Fee Related DE69629412T2 (de) 1995-04-20 1996-04-19 Anlage zur Dampfabscheidung von Dünnschichten

Country Status (4)

Country Link
US (1) US5935337A (de)
EP (1) EP0738788B1 (de)
KR (1) KR100427425B1 (de)
DE (1) DE69629412T2 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW415970B (en) * 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
GB9711080D0 (en) * 1997-05-29 1997-07-23 Imperial College Film or coating deposition on a substrate
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6527865B1 (en) 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
JPH11354516A (ja) * 1998-06-08 1999-12-24 Sony Corp シリコン酸化膜形成装置及びシリコン酸化膜形成方法
JP2000012463A (ja) * 1998-06-17 2000-01-14 Mitsubishi Electric Corp 成膜装置
US6210485B1 (en) 1998-07-21 2001-04-03 Applied Materials, Inc. Chemical vapor deposition vaporizer
KR20000027189A (ko) * 1998-10-27 2000-05-15 윤종용 반도체 장치 제조를 위한 증착설비의 가스공급장치
KR100328820B1 (ko) * 1999-02-25 2002-03-14 박종섭 화학기상증착 장비의 가스분사장치
KR100302609B1 (ko) * 1999-05-10 2001-09-13 김영환 온도가변 가스 분사 장치
EP1077274A1 (de) 1999-08-17 2001-02-21 Applied Materials, Inc. Vorrichtung zur Kühlung eines Deckels sowie Verfahren zum Auftragen eines Dielektrikums mit niedrigem k-Wert
US6635114B2 (en) 1999-12-17 2003-10-21 Applied Material, Inc. High temperature filter for CVD apparatus
US6527866B1 (en) 2000-02-09 2003-03-04 Conductus, Inc. Apparatus and method for deposition of thin films
KR100676979B1 (ko) * 2001-02-09 2007-02-01 동경 엘렉트론 주식회사 성막 장치
KR100434516B1 (ko) * 2001-08-27 2004-06-05 주성엔지니어링(주) 반도체 제조장치
US6951821B2 (en) * 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
JP4493932B2 (ja) * 2003-05-13 2010-06-30 東京エレクトロン株式会社 上部電極及びプラズマ処理装置
US20040237889A1 (en) * 2003-05-28 2004-12-02 Winbond Electronics Corporation Chemical gas deposition process and dry etching process and apparatus of same
EP1629522A4 (de) * 2003-05-30 2008-07-23 Aviza Tech Inc Gasverteilungssystem
JP4399206B2 (ja) * 2003-08-06 2010-01-13 株式会社アルバック 薄膜製造装置
US20050098106A1 (en) * 2003-11-12 2005-05-12 Tokyo Electron Limited Method and apparatus for improved electrode plate
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US7112541B2 (en) 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
CN102154628B (zh) * 2004-08-02 2014-05-07 维高仪器股份有限公司 用于化学气相沉积反应器的多气体分配喷射器
JP2006179770A (ja) * 2004-12-24 2006-07-06 Watanabe Shoko:Kk 基板表面処理装置
US7273823B2 (en) 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
JP5045000B2 (ja) * 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
CN101802254B (zh) * 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
US8628621B2 (en) * 2007-12-31 2014-01-14 Jusung Engineering Co., Ltd. Gas injector and film deposition apparatus having the same
WO2009119285A1 (ja) * 2008-03-24 2009-10-01 東京エレクトロン株式会社 シャワープレートとこれを用いたプラズマ処理装置
JP4961381B2 (ja) * 2008-04-14 2012-06-27 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
KR101004927B1 (ko) * 2008-04-24 2010-12-29 삼성엘이디 주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
FR2930561B1 (fr) * 2008-04-28 2011-01-14 Altatech Semiconductor Dispositif et procede de traitement chimique en phase vapeur.
JP5231117B2 (ja) * 2008-07-24 2013-07-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
TW201038764A (en) * 2009-03-16 2010-11-01 Alta Devices Inc Reactor lid assembly for vapor deposition
WO2011044451A2 (en) * 2009-10-09 2011-04-14 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US20130145989A1 (en) * 2011-12-12 2013-06-13 Intermolecular, Inc. Substrate processing tool showerhead
US9121097B2 (en) * 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
KR20140078284A (ko) * 2012-12-17 2014-06-25 삼성디스플레이 주식회사 증착원 및 이를 포함하는 증착 장치
JP6225088B2 (ja) * 2014-09-12 2017-11-01 株式会社荏原製作所 研磨方法および研磨装置
JP5916909B1 (ja) * 2015-02-06 2016-05-11 株式会社日立国際電気 基板処理装置、ガス整流部、半導体装置の製造方法およびプログラム
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
JP6606403B2 (ja) * 2015-11-05 2019-11-13 株式会社ニューフレアテクノロジー シャワープレート、気相成長装置および気相成長方法
US10780447B2 (en) * 2016-04-26 2020-09-22 Applied Materials, Inc. Apparatus for controlling temperature uniformity of a showerhead
JP6352993B2 (ja) * 2016-08-10 2018-07-04 株式会社東芝 流路構造及び処理装置
CN110023537B (zh) * 2016-09-19 2021-11-16 阿卜杜拉国王科技大学 基座
JP6700156B2 (ja) * 2016-11-16 2020-05-27 株式会社ニューフレアテクノロジー 成膜装置
US11434568B2 (en) * 2018-04-17 2022-09-06 Applied Materials, Inc. Heated ceramic faceplate
US10900124B2 (en) * 2018-06-12 2021-01-26 Lam Research Corporation Substrate processing chamber with showerhead having cooled faceplate
US10910243B2 (en) * 2018-08-31 2021-02-02 Applied Materials, Inc. Thermal management system
KR102517783B1 (ko) * 2018-11-28 2023-04-04 (주)포인트엔지니어링 반도체 제조 공정용 또는 디스플레이 제조 공정용 프로세스 유체가 통과하는 접합부품
CN113862646B (zh) * 2021-09-27 2023-12-26 杭州中欣晶圆半导体股份有限公司 一种apcvd沉积过程颗粒物控制系统及其控制方法
US20230407478A1 (en) * 2022-05-27 2023-12-21 Applied Materials, Inc. Process kits and related methods for processing chambers to facilitate deposition process adjustability

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
JPS591671A (ja) * 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS63307276A (ja) * 1987-06-05 1988-12-14 Kawasaki Steel Corp 超伝導体薄膜作製用のｍｏｃｖｄ装置
US5106453A (en) * 1990-01-29 1992-04-21 At&T Bell Laboratories MOCVD method and apparatus
JPH05335248A (ja) * 1992-05-29 1993-12-17 Toshiba Corp 薄膜製造方法
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
JPH0665751A (ja) * 1992-08-20 1994-03-08 Showa Denko Kk 無電解複合めっき浴及びめっき方法
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same

Also Published As

Publication number Publication date
EP0738788A3 (de) 1998-04-22
EP0738788A2 (de) 1996-10-23
DE69629412T2 (de) 2004-06-24
KR960039387A (ko) 1996-11-25
KR100427425B1 (ko) 2005-08-01
US5935337A (en) 1999-08-10
EP0738788B1 (de) 2003-08-13

Similar Documents

Publication Publication Date Title
DE69629412D1 (de) Anlage zur Dampfabscheidung von Dünnschichten
DE69611952D1 (de) Vorrichtung zur Gasphasenabscheidung dünner Schichten
DE69411811D1 (de) Dreieckige Kammer für Aufdampfungs-Anlage
DE69602300T2 (de) Verfahren zur Abscheidung von Kohlenstoffschichten
DE69205494D1 (de) Beschichtungssystem zur plasmachemischen Gasphasenabscheidung.
DE69617134D1 (de) Vorrichtungen zum Aufdampfen oder Ätzen
DE60042533D1 (de) Sputterverfahren zur Abscheidung von Kohlenstoffschichten
DE69700448T2 (de) Material zur Gasphasenabscheidung
DE68917164T2 (de) Anlage zur mikrowellenchemischen Dampfphasenabscheidung.
DE68921286D1 (de) Anlage zur plasmachemischen Gasphasenabscheidung.
DE69331173D1 (de) Anlage zur plasmaaktivierten Gasphasenabscheidung
ATA84495A (de) Anlage zur herstellung von warengruppen
DE59811264D1 (de) Verfahren zur Abscheidung optischer Schichten
DE68921253D1 (de) Verfahren zur Abscheidung einer dünnen Supraleiterschicht.
DE29517526U1 (de) Pflanzsubstrat
DE69913575D1 (de) Material zur Gasphasenabscheidung
IS4285A (is) Aðferð við að hindra útfellingu
DE69315309T2 (de) Material zur gasphasenabscheidung und herstellungsverfahren
DE4396720D2 (de) Verfahren und Anlage zur Schichtabscheidung
KR970046641U (ko) 화학기상증착장치
KR960027781U (ko) 화학기상증착장치
KR970015294U (ko) 화학기상증착장치
KR960027170U (ko) 화학 기상 증착장치
KR960011167U (ko) 화학증착 코팅장치
DE59102979D1 (de) Verfahren zur Abscheidung dünner und dünnster Schichten.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee