JP5231117B2 - 成膜装置および成膜方法 - Google Patents
成膜装置および成膜方法 Download PDFInfo
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- JP5231117B2 JP5231117B2 JP2008191286A JP2008191286A JP5231117B2 JP 5231117 B2 JP5231117 B2 JP 5231117B2 JP 2008191286 A JP2008191286 A JP 2008191286A JP 2008191286 A JP2008191286 A JP 2008191286A JP 5231117 B2 JP5231117 B2 JP 5231117B2
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- 238000000034 method Methods 0.000 title claims description 7
- 239000000112 cooling gas Substances 0.000 claims description 82
- 239000012495 reaction gas Substances 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 238000011144 upstream manufacturing Methods 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 60
- 229910052710 silicon Inorganic materials 0.000 description 60
- 239000010703 silicon Substances 0.000 description 60
- 238000001816 cooling Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 14
- 239000010453 quartz Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000005259 measurement Methods 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Description
前記基板に対して前記反応ガスが流れる方向の上流側に整流板を設け、
前記整流板の内部を冷却ガスが通過する構造としたことを特徴とするものである。
前記第1の貫通孔と交差しない位置に設けられた第2の貫通孔とを備えることができる。この場合、前記第1の貫通孔を通って前記反応ガスが前記基板の方に流下し、前記第2の貫通孔を前記冷却ガスが通過する。
前記基板に対して前記反応ガスが流れる方向の上流側に、所定の間隔をおいて配設された2枚の平板と、前記2枚の平板にそれぞれ設けられた貫通孔を接続する接続管とを備えた整流板を設け、
前記接続管の内部を通って前記反応ガスが前記基板の方に流下し、前記2枚の平板の間を冷却ガスが通過する構造としたことを特徴とするものである。
前記基板に対して前記反応ガスが流れる方向の上流側に、複数の貫通孔が設けられた第1の部分と、前記第1の部分の周囲に沿って設けられた中空の第2の部分とを備えた整流板を設け、
前記貫通孔を通って前記反応ガスが前記基板の方に流下し、前記第2の部分を冷却ガスが通過する構造としたことを特徴とするものである。
前記基板に対して前記反応ガスが流れる方向の上流側に整流板を設け、前記整流板の内部に冷却ガスを流しながら、前記整流板に設けた貫通孔を通じて前記反応ガスを前記基板の方に流下させることを特徴とするものである。
図1は、本実施の形態における枚葉式の成膜装置の模式的な断面図である。本実施の形態においては、基板としてシリコンウェハ101を用いる。但し、これに限られるものではなく、場合に応じて、他の材料からなるウェハなどを用いてもよい。
図5は、本実施の形態の整流板の斜視図である。尚、整流板以外の成膜装置の構造は、実施の形態1で説明した図1と同様とすることができる。
図6は、本実施の形態の整流板の断面斜視図である。尚、整流板以外の成膜装置の構造は、実施の形態1で説明した図1と同様とすることができる。
101 シリコンウェハ
102 チャンバ
103 反応ガス供給路
104、204、304 整流板
104a 第1の貫通孔
104b 第2の貫通孔
105 冷却ガス供給路
106 第1の排気管
107 第2の加熱手段
108 第2の排気管
109 開口部
110 サセプタ
111 回転部
111a 円筒部
111b 回転軸
112 制御装置
113 3方弁
120 インヒータ
121 アウトヒータ
122 放射温度計
214、215 板
216、217、314 貫通孔
218 接続管
315 第1の部分
316 第2の部分
Claims (5)
- 反応ガスが導入され、内部に載置される基板を加熱して前記基板表面に膜を形成する成膜室と、
前記成膜室の上部に設けられ、前記成膜室に前記反応ガスを供給する第1の流路と、
前記基板に対して前記反応ガスが流れる方向の上流側に設けられ、前記上流側から下流側に向かって前記反応ガスが通る第1の貫通孔と、前記第1の貫通孔と交差しない位置に設けられ冷却ガスが流れる第2の貫通孔とを備える整流板と、
前記冷却ガスを前記整流板の前記第2の貫通孔に供給する第2の流路と、
前記整流板から排出された前記冷却ガスを前記成膜室に供給する第3の流路と、
前記成膜室の下部に設けられ前記成膜室での反応後の反応ガスを排気するとともに前記成膜室に排出された前記冷却ガスを排気する第4の流路とを有することを特徴とする成膜装置。 - 反応ガスが導入され、内部に載置される基板を加熱して前記基板表面に膜を形成する成膜室と、
前記成膜室の上部に設けられ、前記成膜室に前記反応ガスを供給する第1の流路と、
前記基板に対して前記反応ガスが流れる方向の上流側に設けられ、所定の間隔をおいて配設された2枚の平板と、前記2枚の平板にそれぞれ設けられた貫通孔を接続する接続管とを備えた整流板と、
前記冷却ガスを前記整流板の前記2枚の平板の間に供給する第2の流路と、
前記整流板から排出された前記冷却ガスを前記成膜室に供給する第3の流路と、
前記成膜室の下部に設けられ前記成膜室での反応後の反応ガスを排気するとともに前記成膜室に排出された前記冷却ガスを排気する第4の流路とを有することを特徴とする成膜装置。 - 反応ガスが導入され、内部に載置される基板を加熱して前記基板表面に膜を形成する成膜室と、
前記成膜室の上部に設けられ、前記成膜室に前記反応ガスを供給する第1の流路と、
前記基板に対して前記反応ガスが流れる方向の上流側に設けられ、複数の貫通孔が設けられた第1の部分と、前記第1の部分の周囲に沿って設けられた中空の第2の部分とを備えた整流板と、
前記冷却ガスを前記整流板の前記第2の部分に供給する第2の流路と、
前記整流板から排出された前記冷却ガスを前記成膜室に供給する第3の流路と、
前記成膜室の下部に設けられ前記成膜室での反応後の反応ガスを排気するとともに前記成膜室に排出された前記冷却ガスを排気する第4の流路とを有することを特徴とする成膜装置。 - 前記冷却ガスは、水素であることを特徴とする請求項1から請求項3のいずれかに記載の成膜膜装置。
- 成膜室内に反応ガスを供給し、前記成膜室内に載置される基板を加熱して前記基板の表面に膜を形成するために、
前記成膜室の上部に前記基板の表面に膜を形成するための前記反応ガスを供給し、
前記基板に対して前記反応ガスが流れる方向の上流側に設けられた整流板に冷却ガスを供給し、
前記整流板の内部に前記冷却ガスを流しながら、前記整流板に設けた貫通孔を通じて前記反応ガスを前記基板の方に流下させ、
前記整流板から排出された前記冷却ガスを前記成膜室に供給し、
前記成膜室の下部に設けられ前記成膜室での反応後の反応ガスを排気するとともに前記成膜室に供給された前記冷却ガスを排気することを特徴とする成膜方法。
Priority Applications (4)
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JP2008191286A JP5231117B2 (ja) | 2008-07-24 | 2008-07-24 | 成膜装置および成膜方法 |
TW098124567A TWI404819B (zh) | 2008-07-24 | 2009-07-21 | 成膜裝置及成膜方法 |
KR1020090067230A KR101313524B1 (ko) | 2008-07-24 | 2009-07-23 | 성막 장치와 성막 방법 |
US12/508,012 US8632634B2 (en) | 2008-07-24 | 2009-07-23 | Coating apparatus and coating method |
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JP2008191286A JP5231117B2 (ja) | 2008-07-24 | 2008-07-24 | 成膜装置および成膜方法 |
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JP5231117B2 true JP5231117B2 (ja) | 2013-07-10 |
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US (1) | US8632634B2 (ja) |
JP (1) | JP5231117B2 (ja) |
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TW (1) | TWI404819B (ja) |
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KR101553453B1 (ko) * | 2010-06-14 | 2015-09-15 | 가부시키가이샤 알박 | 성막 장치 |
CN102345112B (zh) * | 2011-09-22 | 2013-08-21 | 中微半导体设备(上海)有限公司 | 一种半导体处理设备及其气体喷淋头冷却板 |
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JP6158025B2 (ja) * | 2013-10-02 | 2017-07-05 | 株式会社ニューフレアテクノロジー | 成膜装置及び成膜方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US10407772B2 (en) | 2015-11-05 | 2019-09-10 | Nuflare Technology, Inc. | Shower head, vapor phase growth apparatus, and vapor phase growth method |
US10550473B2 (en) | 2015-11-05 | 2020-02-04 | Nuflare Technology, Inc. | Shower head, vapor phase growth apparatus, and vapor phase growth method |
US11047047B2 (en) | 2015-11-05 | 2021-06-29 | Nuflare Technology, Inc. | Shower head, vapor phase growth apparatus, and vapor phase growth method |
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TW201006956A (en) | 2010-02-16 |
JP2010028056A (ja) | 2010-02-04 |
KR101313524B1 (ko) | 2013-10-01 |
US8632634B2 (en) | 2014-01-21 |
KR20100011924A (ko) | 2010-02-03 |
US20100021631A1 (en) | 2010-01-28 |
TWI404819B (zh) | 2013-08-11 |
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