JP6226677B2 - 半導体製造装置および半導体製造方法 - Google Patents
半導体製造装置および半導体製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 48
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 238000005755 formation reaction Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000006227 byproduct Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 100
- 230000007246 mechanism Effects 0.000 description 12
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
図1は、本実施形態に係る半導体製造装置の反応炉10の全体構成例を示す断面図である。同図に示すように、反応炉10は、ガス導入部10a、成膜反応部10bから構成されている。ガス導入部10aにおいては、ソースガス(例えば、トリクロロシラン(SiHCl3)、ジクロロシラン(SiH2Cl2)など)および水素(H2)などのキャリアガスを含むプロセスガスが導入される。ガス導入部10aの下部に設けられる成膜反応部10bにおいては、、成膜反応部10bに導入されたウェーハwの上面でプロセスガスによる成膜反応が行われる。ガス導入部10aにおいて、天井面の端部近傍には、プロセスガスを供給するためのガス供給機構(図示省略)に接続されたガス導入口11が例えば2箇所に設けられている。そして、ガス導入口11からのプロセスガス流を緩和させるための緩衝部13が設けられている。
以下、本発明の実施形態2について説明する。なお、上記実施形態1において付された符号と共通する符号は同一の対象を表すため説明を省略し、以下では実施形態1と異なる箇所について詳細に説明する。
Claims (5)
- プロセスガスを導入するガス導入口及びこのガス導入口より前記プロセスガスが導入される緩衝部を含むガス導入部と、前記プロセスガスによりウェーハ上に成膜反応が行われる成膜反応部と、を有する反応炉と、
前記緩衝部から水平方向に分散された状態で導入された前記プロセスガスを前記ウェーハの上面に整流状態で供給する整流板と、
前記成膜反応部内に設けられ、前記ウェーハを支持するウェーハ支持部材と、
前記成膜反応部内に設けられ、前記ウェーハ支持部材の外周部を支持し、前記ウェーハ支持部材と共に前記ウェーハを回転させる回転部と、
この回転部内に設けられ、前記ウェーハを下面側から加熱するヒータと、
前記反応炉の底部に設けられ、前記成膜反応における反応副生成物を含む排気ガスを排出するガス排出口と、を備え、
前記緩衝部は、前記整流板の外周部の一部に設けられることを特徴とする半導体製造装置。 - 前記緩衝部と前記整流板との間に上方向へ突出して形成され、前記緩衝部から前記整流板に導入される前記プロセスガスの流れの障壁となるように形成された堰部材を更に備えることを特徴とする請求項1記載の半導体製造装置。
- 前記堰部材の高さ、厚さまたは幅は、前記緩衝部の位置、大きさおよび前記プロセスガスの流量条件に基づいてそれぞれ調整されることを特徴とする請求項2の半導体製造装置。
- 前記堰部材は、着脱可能に設けられることを特徴とする請求項2または請求項3記載の半導体製造装置。
- 反応炉内にウェーハを導入して支持し、
前記反応炉の上部の内部空間領域に形成された緩衝部内へプロセスガスを導入し、
前記緩衝部から整流板の上部領域に、水平方向に分散された状態で前記プロセスガスを導入し、
前記整流板を介してから前記ウェーハの上面に前記プロセスガスを整流状態で供給し、
前記ウェーハを下方から加熱しながら回転させ、前記ウェーハの上面に成膜を行い、
前記緩衝部は、前記整流板の外周部の一部に設けられることを特徴とする半導体製造方法。
Priority Applications (4)
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JP2013207430A JP6226677B2 (ja) | 2013-10-02 | 2013-10-02 | 半導体製造装置および半導体製造方法 |
KR1020140129171A KR101633557B1 (ko) | 2013-10-02 | 2014-09-26 | 반도체 제조장치 및 반도체 제조방법 |
TW103133951A TWI548772B (zh) | 2013-10-02 | 2014-09-30 | 半導體製造裝置以及半導體製造方法 |
US14/501,864 US20150093883A1 (en) | 2013-10-02 | 2014-09-30 | Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device |
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JP2013207430A JP6226677B2 (ja) | 2013-10-02 | 2013-10-02 | 半導体製造装置および半導体製造方法 |
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JP2015072989A JP2015072989A (ja) | 2015-04-16 |
JP6226677B2 true JP6226677B2 (ja) | 2017-11-08 |
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US (1) | US20150093883A1 (ja) |
JP (1) | JP6226677B2 (ja) |
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TW (1) | TWI548772B (ja) |
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KR102215965B1 (ko) | 2014-04-11 | 2021-02-18 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 포함하는 기판 처리 장치 |
JP2018522401A (ja) * | 2015-06-22 | 2018-08-09 | ビーコ インストゥルメンツ インコーポレイテッド | 化学蒸着のための自己心合ウエハキャリアシステム |
TWI666684B (zh) * | 2015-11-16 | 2019-07-21 | 日商東京威力科創股份有限公司 | 塗佈膜形成方法、塗佈膜形成裝置及記憶媒體 |
KR102454256B1 (ko) * | 2018-02-22 | 2022-10-17 | 삼성디스플레이 주식회사 | 기판 절단 장치 |
CN118345505A (zh) * | 2024-03-22 | 2024-07-16 | 南京原磊纳米材料有限公司 | 一种晶圆反应装置 |
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---|---|---|---|---|
FR2653633B1 (fr) * | 1989-10-19 | 1991-12-20 | Commissariat Energie Atomique | Dispositif de traitement chimique assiste par un plasma de diffusion. |
US5493987A (en) * | 1994-05-16 | 1996-02-27 | Ag Associates, Inc. | Chemical vapor deposition reactor and method |
JPH0997765A (ja) * | 1995-09-29 | 1997-04-08 | Toshiba Corp | 基板処理装置 |
JP2003203866A (ja) * | 2001-10-24 | 2003-07-18 | Shin Etsu Handotai Co Ltd | 気相成長装置およびエピタキシャルウェーハの製造方法 |
KR100377095B1 (en) | 2002-02-01 | 2003-03-20 | Nexo Co Ltd | Semiconductor fabrication apparatus using low energy plasma |
JP2007311660A (ja) * | 2006-05-19 | 2007-11-29 | Toyoda Gosei Co Ltd | ガス供給用ノズル及びこれを備えた半導体製造装置 |
JP2008016765A (ja) | 2006-07-10 | 2008-01-24 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP4981485B2 (ja) * | 2007-03-05 | 2012-07-18 | 株式会社ニューフレアテクノロジー | 気相成長方法および気相成長装置 |
JP2008243938A (ja) * | 2007-03-26 | 2008-10-09 | Nuflare Technology Inc | 熱cvd方法および熱cvd装置 |
JP5143689B2 (ja) * | 2007-09-27 | 2013-02-13 | シャープ株式会社 | 気相成長装置及び半導体素子の製造方法 |
JP4865672B2 (ja) * | 2007-10-22 | 2012-02-01 | シャープ株式会社 | 気相成長装置及び半導体素子の製造方法 |
JP2009270143A (ja) * | 2008-05-02 | 2009-11-19 | Nuflare Technology Inc | サセプタ、半導体製造装置及び半導体製造方法 |
JP5015085B2 (ja) * | 2008-07-15 | 2012-08-29 | シャープ株式会社 | 気相成長装置 |
JP2012519956A (ja) | 2009-03-03 | 2012-08-30 | ジュソン エンジニアリング カンパニー リミテッド | ガス分配装置およびこれを備える基板処理装置 |
JP2011066356A (ja) * | 2009-09-18 | 2011-03-31 | Samco Inc | 薄膜製造装置 |
JP5321395B2 (ja) * | 2009-09-30 | 2013-10-23 | 沖電気工業株式会社 | 窒化物薄膜成膜装置 |
KR100991978B1 (ko) | 2009-10-30 | 2010-11-05 | (주)브이티에스 | 화학 기상 증착 리액터 |
JP2011151118A (ja) * | 2010-01-20 | 2011-08-04 | Nuflare Technology Inc | 半導体製造装置および半導体製造方法 |
JP2011222592A (ja) * | 2010-04-05 | 2011-11-04 | Sharp Corp | 気相成長装置及び気相成長方法 |
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- 2014-09-26 KR KR1020140129171A patent/KR101633557B1/ko active IP Right Grant
- 2014-09-30 TW TW103133951A patent/TWI548772B/zh active
- 2014-09-30 US US14/501,864 patent/US20150093883A1/en not_active Abandoned
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KR101633557B1 (ko) | 2016-06-24 |
TWI548772B (zh) | 2016-09-11 |
KR20150039563A (ko) | 2015-04-10 |
JP2015072989A (ja) | 2015-04-16 |
TW201518537A (zh) | 2015-05-16 |
US20150093883A1 (en) | 2015-04-02 |
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