JP6606403B2 - シャワープレート、気相成長装置および気相成長方法 - Google Patents
シャワープレート、気相成長装置および気相成長方法 Download PDFInfo
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- JP6606403B2 JP6606403B2 JP2015217593A JP2015217593A JP6606403B2 JP 6606403 B2 JP6606403 B2 JP 6606403B2 JP 2015217593 A JP2015217593 A JP 2015217593A JP 2015217593 A JP2015217593 A JP 2015217593A JP 6606403 B2 JP6606403 B2 JP 6606403B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
本実施形態のシャワープレートは、複数のプロセスガスを混合する混合室と、混合された複数のプロセスガスが流れる複数の縦方向流路と、複数の縦方向流路間に設けられ冷媒が流れる横方向冷却流路と、を有し混合室下方に設けられた供給部と、供給部の周囲に設けられた外周部冷却流路と、を備える。
本実施形態のシャワープレートは、縦方向流路の間に設けられた第1の透明部材128と、天板102内に設けられた第2の透明部材130と、第2の透明部材130上に設けられた計測装置と、をさらに備える点で、第1の実施形態のシャワープレートと異なっている。ここで、第1の実施形態と重複する点については、記載を省略する。
本実施形態のシャワープレートは、第1の透明部材128内に縦方向流路124が設けられている点で第2の実施形態と異なっている。ここで、第2の実施形態と重複する点については、記載を省略する。
本実施形態においては、第1から第3の実施形態の気相成長装置が用いられるが、成長させる膜ごとに、シャワープレート100(供給部120)を異なる温度に制御する点で第1から第3の実施形態と異なっている。ここで、第1ないし第3の実施形態と重複する点については、記載を省略する。
12 支持部
14 回転リング
16 回転ベース
18 回転軸
20 回転駆動機構
22 電極
26 加熱部
28 ガス排出部50 計測装置
100 シャワープレート
102 天板
110 混合室
112 第1のチラーユニット
114 第2のチラーユニット
120 供給部
121 供給部の中心
124 縦方向流路
126 横方向冷却流路
128 第1の透明部材
130 第2の透明部材
142 第1のガス供給路
144 第2のガス供給路
146 第3のガス供給路
152 第1のマニフォールド
154 第2のマニフォールド
156 第3のマニフォールド
162 第1の接続流路
164 第2の接続流路
166 第3の接続流路
170 外周部冷却機構
172 外周部冷却流路
174 外周部配管
180 制御機構
1000 気相成長装置
W 基板
Claims (8)
- 複数のプロセスガスを混合する混合室と、
混合された前記複数のプロセスガスが流れる複数の縦方向流路と、前記複数の縦方向流路間に設けられ冷媒が流れる横方向冷却流路と、第1の透明部材と、を有し前記混合室下方に設けられた供給部と、
前記混合室の上方に配置され、前記第1の透明部材の上方に第2の透明部材が設けられた天板と、
前記供給部の周囲に設けられた外周部冷却流路と、
を備え、
前記第1の透明部材中に前記複数の縦方向流路のうち少なくとも1つが設けられる、
シャワープレート。 - 前記冷媒が流れる方向に垂直な面内において、前記横方向冷却流路の径aと前記縦方向流路の径dと前記横方向冷却流路を介さないで配置される前記複数の縦方向流路の間隔tはt<a<d+2tの関係を有する、請求項1記載のシャワープレート。
- 前記供給部の中心から離れて前記横方向冷却流路は配置される、請求項1または請求項2記載のシャワープレート。
- 反応室と、
前記反応室内に設けられ、基板を載置可能な支持部と、
前記反応室上部に設けられた請求項1ないし請求項3いずれか一項記載のシャワープレートと、
を備える気相成長装置。 - 前記横方向冷却流路と、前記外周部冷却流路と、を用いて前記供給部の温度を制御する制御機構をさらに備える請求項4に記載の気相成長装置。
- 複数のプロセスガスを混合し、
混合された前記複数のプロセスガスを第1の透明部材を有する供給部の前記第1の透明部材を含む領域に設けられた複数の縦方向流路に供給し、
前記複数の縦方向流路間に設けられ冷媒が流れる横方向冷却流路と、前記供給部の周囲に設けられた外周部冷却流路と、を用いて、前記供給部の最外周部における温度と中心部における温度の差が5℃以内になるように、前記供給部の温度を制御し、
前記複数のプロセスガスを前記複数の縦方向流路から反応室内に供給し、
前記反応室内に載置された基板上に前記複数のプロセスガスを用いて膜を成長し、
前記第1の透明部材及び前記第1の透明部材の上方に設けられた第2の透明部材を介して、前記膜の測定を行う、
気相成長方法。 - 成長させる前記膜に応じて、前記供給部の温度を変動させる、請求項6に記載の気相成長方法。
- 前記膜がAlN膜であるとき、GaまたはMgを含む膜を成長させるときより前記供給部の温度を低くする、請求項7に記載の気相成長方法。
Priority Applications (5)
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JP2015217593A JP6606403B2 (ja) | 2015-11-05 | 2015-11-05 | シャワープレート、気相成長装置および気相成長方法 |
US15/340,606 US10407772B2 (en) | 2015-11-05 | 2016-11-01 | Shower head, vapor phase growth apparatus, and vapor phase growth method |
DE102016121109.5A DE102016121109B4 (de) | 2015-11-05 | 2016-11-04 | Duschkopf, Dampfphasenwachstumsvorrichtung und Dampfphasenwachstumsverfahren |
US16/505,056 US10550473B2 (en) | 2015-11-05 | 2019-07-08 | Shower head, vapor phase growth apparatus, and vapor phase growth method |
US16/728,626 US11047047B2 (en) | 2015-11-05 | 2019-12-27 | Shower head, vapor phase growth apparatus, and vapor phase growth method |
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JP2018101721A (ja) | 2016-12-21 | 2018-06-28 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
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US20170130335A1 (en) | 2017-05-11 |
JP2017092140A (ja) | 2017-05-25 |
US10550473B2 (en) | 2020-02-04 |
US11047047B2 (en) | 2021-06-29 |
DE102016121109A1 (de) | 2017-05-11 |
US10407772B2 (en) | 2019-09-10 |
DE102016121109B4 (de) | 2023-08-17 |
US20200131639A1 (en) | 2020-04-30 |
US20190330739A1 (en) | 2019-10-31 |
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