CN114214608B - 一种用于生产超导带材的喷淋器 - Google Patents
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- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 238000001816 cooling Methods 0.000 claims abstract description 24
- 239000000126 substance Substances 0.000 claims abstract description 19
- 239000002826 coolant Substances 0.000 claims description 7
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- 238000000034 method Methods 0.000 description 12
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Abstract
本发明公开一种用于生产超导带材的喷淋器,包括喷淋箱体,其内具有空腔且其顶部设有化学源入口;喷淋板组件,其设于所述空腔内,所述喷淋板组件包括由上而下层状间隔组合在一起的喷淋板和冷却板,所述喷淋板和冷却板将所述空腔分隔成由上而下分布的化学源腔、喷淋腔和冷却腔,所述喷淋板组件还包括设于所述喷淋腔内的钢带,所述钢带上形成有喷淋孔;传动装置,包括位于所述喷淋箱体一侧的放卷装置和另一侧的收卷装置,所述钢带传动且可拆卸地连接于所述放卷装置和收卷装置之间。解决了现有技术中喷淋板和喷淋孔为一体结构导致喷淋孔上附着有杂质,使得喷淋效果变差的问题,提高超导带材的电流首尾一致性。
Description
技术领域
本发明涉及超导带材技术领域,具体地涉及一种用于生产超导带材的喷淋器。
背景技术
在薄膜生长过程中,经常会用到MOCVD技术,MOCVD(Metal-organic ChemicalVapor Deposition)即金属有机化合物化学气相沉积,它具有外延面积大、可重复性强、组分控制精确、沉积速率高、生长规模大等优点,广泛应用于半导体、超导材料等领域。
用MOCVD技术生产超导带材YBCO(钇钡铜氧)时,可分为三大系统,传动系统,化学源输运过程以及YBCO生长过程。本发明对化学源输运过程中的喷淋板进行改造升级。用于生长YBCO的化学源经过蒸发器后跟随载气氩气进入沉积区。在这个过程中首先是通过真空管道,因为在蒸发化学源前要蒸发20min的四氢呋喃,所以对真空管道内的热稳定性和管壁上的杂质可以实现一次有效的处理使化学源在管道中的传输损失大大降低。然而在喷淋器上,由于喷淋器下方是氧气板,氧气板下面又是用于带材生长的沉积区。在此区域由于化学源和氧气的混合及弧形板的热效应,导致了稳定性很差,一般带材生长经过15h后会出现明显的衰减。导致稳定性变差的原因主要是化学源在喷淋过程中与氧气接触,由于化学源的主要成分是气态四氢呋喃、金属有机化合物、以及载气氩气,四氢呋喃和金属有机化合物在接触到氧气后加上此区域的温度只有300℃左右,部分四氢呋喃就会分解生成过氧化物,有些会附着在喷淋孔,部分金属有机化合物也因为此区域的温度不稳定而分解出不利于YBCO生长的产物并附着在喷淋孔周围,例如氧化铜、氧化钇等等。所以如果要生产足够长的长带就必须在带材生长过程中及时处理掉喷淋孔上附着的杂质。现有技术中喷淋器的喷淋板和喷淋孔为一体结构,也就是说喷淋孔是开设在喷淋板中间的小孔,这种结构的喷淋器在长时间的化学源喷淋后,由于喷淋孔上杂质的附着,使得喷淋效果会变差,导致生产的超导带材的电流首尾一致性较差。
发明内容
针对上述存在的技术问题,本发明目的是提供一种用于生产超导带材的喷淋器,在带材生长过程中及时处理掉喷淋孔上附着的杂质,提高超导带材的电流首尾一致性。
本发明的技术方案是:
本发明的目的在于提供一种用于生产超导带材的喷淋器,包括:
喷淋箱体,其内具有空腔且其顶部设有化学源入口;
喷淋板组件,其设于所述空腔内,所述喷淋板组件包括由上而下层状间隔组合在一起的喷淋板和冷却板,所述喷淋板和冷却板将所述空腔分隔成由上而下分布的化学源腔、喷淋腔和冷却腔,所述喷淋板组件还包括设于所述喷淋腔内的钢带,所述钢带上形成有喷淋孔;
传动装置,包括位于所述喷淋箱体一侧的放卷装置和另一侧的收卷装置,所述钢带传动且可拆卸地连接于所述放卷装置和收卷装置之间。
与现有技术相比,本发明的优点是:
本发明的用于生产超导带材的喷淋器,通过对喷淋板进行改进,喷淋板和冷却板组装,钢带上开设喷淋孔,将钢带与传动装置传动连接,在使用完成后,将钢带取出进行泡酸清洗和烘干,处理完成后再次装机重复使用。解决了现有技术中喷淋板和喷淋孔为一体结构导致喷淋孔上附着有杂质,使得喷淋效果变差的问题,提高超导带材的电流首尾一致性。
附图说明
下面结合附图及实施例对本发明作进一步描述:
图1为本发明实施例的用于生产超导带材的喷淋器的结构示意图;
图2为本发明实施例的用于生产超导带材的喷淋器的喷淋板的结构示意图;
图3为现有的用于生产超导带材的喷淋器的喷淋板的结构示意图。
其中:1、喷淋箱体;10、化学源入口;11、化学源腔;12、喷淋腔;13、冷却腔;2、喷淋板;21、喷淋板本体;22、喷孔;3、冷却板;4、螺栓;5、钢带;6、放卷装置;61、放卷盘;62、放卷导轮;7、收卷装置;71、收卷盘;72、收卷导轮;8、冷却介质入口;9、冷却介质出口。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明了,下面结合具体实施方式并参照附图,对本发明进一步详细说明。应该理解,这些描述只是示例性的,而并非要限制本发明的范围。此外,在以下说明中,省略了对公知结构和技术的描述,以避免不必要地混淆本发明的概念。
实施例
如图1至图2所示,本发明实施例的用于生产超导带材的喷淋器,包括喷淋箱体1、喷淋板组件和传动装置。其中喷淋箱体1内具有空腔且顶部设有化学源入口10。喷淋板组件设于空腔内,喷淋板组件包括由上而下层状间隔组合在一起的喷淋板2和冷却板3,喷淋板2和冷却板3将空腔分隔成由上而下分布的化学源腔11、喷淋腔12和冷却腔13,喷淋板组件还包括设于喷淋腔12内的钢带5,钢带5上形成有喷淋孔(未示出)。传动装置包括位于喷淋箱体1一侧的放卷装置6和另一侧的收卷装置7,钢带5传动且可拆卸地连接于放卷装置6和收卷装置7之间。本发明创造性地对现有的喷淋器的喷淋板改进,将现有与喷淋板一体的喷淋孔,由与传动装置传动且可拆卸连接的钢带来代替,钢带5位于喷淋板2下方,在钢带5上形成有喷淋孔,在使用完成后,直接将钢带5拆卸取出进行泡酸清洗和烘干,去除喷淋孔内的杂质,使得喷淋孔可以不断更新使用,确保超导带材的电流首尾一致性。
具体的,如图2所示,喷淋板2的整个表面均开有喷孔22,相比现有技术中也即如图3所示的喷淋板2’只在中间区域开设多排喷淋孔22’而言,本发明实施例的喷淋板2的喷淋效果更好。即使部分喷孔22在长期使用过程中带有杂质,但由于喷淋孔设置在钢带5上,钢带5可以取出进行泡酸处理,不会附有杂质,仍可以确保超导带材的电流首尾一致性。本发明实施例中喷淋板采用机加工而成,包括一长板状的喷淋板本体21和设于喷淋板本体21上的喷孔22,其中喷孔22分布整个喷淋板本体21的板面。
对于钢带5而言,可选的,钢带5采用5cm宽、0.1cm厚、5m长,在钢带5上下两个边缘做倒圆角处理。在距离边缘0.5cm范围也即中间4cm范围内均匀开设多排比如五排间距的小孔(未示出),多排小孔形成上述的喷淋孔,小孔的大小可选为0.1*0.1cm。也就是说喷淋孔与现有技术中的喷淋孔差不多,只是本实施例中将喷淋孔创造性地设置在钢带5上,通过对钢带5进行泡酸处理,使得喷淋孔上附着的杂质可以及时地被清理掉,从而确保生产的超导带材的电流首尾一致性。
对于放卷装置6和收卷装置7而言,如图1所示,放卷装置6沿传动方向上依次包括放卷盘61和放卷导轮62,收卷装置7沿传动方向上依次包括收卷导轮72和收卷盘71,放卷导轮62和收卷导轮72的数量均为两个,两个放卷导轮62和两个收卷导轮72分别沿同一直线间隔设置比如如图1所示的竖直线设置。
如图1所示,在喷流箱体1对应冷却腔13位置的左右两侧壁上设有分别与冷却腔13连通的冷却介质入口8和冷却介质出口9,本发明实施例中采用油冷,冷却腔13和冷却介质的设置是为了满足超导带材生产工艺中的冷却环境的要求。
本发明的喷淋器使用时,将喷淋板2与喷淋板2下方的冷却板3通过螺栓4组装后,将钢带5与传动装置组装,之后将传动速度调至0.2m/h,进行试运行,试运行正常后进行抽真空,然后生产使用。在通四氢呋喃时启动喷淋器的传动装置,然后进行生产,生产结束后,只需将使用过的钢带5取出泡酸清洗和烘干,处理完之后重新装机重复使用。
使用本发明实施例的喷淋器生产出来的长带,性能得到了较大的提升。500A的带材电流要求,千米带材的首位电流差异也完美的控制在5A以内,解决了之前一直困扰的千米长带电流首位差异的问题,对使用MOCVD方法生产第二代高温超导带材工艺产生重大突破。
应当理解的是,本发明的上述具体实施方式仅仅用于示例性说明或解释本发明的原理,而不构成对本发明的限制。因此,在不偏离本发明的精神和范围的情况下所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。此外,本发明所附权利要求旨在涵盖落入所附权利要求范围和边界、或者这种范围和边界的等同形式内的全部变化和修改例。
Claims (6)
1.一种用于生产超导带材的喷淋器,其特征在于,包括:
喷淋箱体,其内具有空腔且其顶部设有化学源入口;
喷淋板组件,其设于所述空腔内,所述喷淋板组件包括由上而下层状间隔组合在一起的喷淋板和冷却板,所述喷淋板和冷却板将所述空腔分隔成由上而下分布的化学源腔、喷淋腔和冷却腔,所述喷淋板组件还包括设于所述喷淋腔内的钢带,所述钢带上形成有喷淋孔,所述钢带中间距离边缘0.5cm范围内均匀开有多排间隔的小孔,多排所述小孔形成所述喷淋孔;
传动装置,包括位于所述喷淋箱体一侧的放卷装置和另一侧的收卷装置,所述钢带传动且可拆卸地连接于所述放卷装置和收卷装置之间;
所述喷淋板的整个板面均开有喷孔。
2.根据权利要求1所述的用于生产超导带材的喷淋器,其特征在于,所述喷淋板和所述冷却板之间通过螺栓连接并与所述喷淋箱体固定。
3.根据权利要求1所述的用于生产超导带材的喷淋器,其特征在于,所述小孔的尺寸为0.1*0.1cm。
4.根据权利要求1所述的用于生产超导带材的喷淋器,其特征在于,所述放卷装置包括沿传动方向依次设置的放卷盘和放卷导轮,所述收卷装置包括沿传动方向依次设置的收卷导轮和收卷盘,所述放卷盘和所述放卷导轮之间以及所述收卷导轮和收卷盘之间均通过传动带传动连接,所述钢带的两端分别与所述传动带连接。
5.根据权利要求1所述的用于生产超导带材的喷淋器,其特征在于,在所述喷淋箱体的侧壁上对应所述冷却腔位置分别设有与所述冷却腔连通的冷却介质入口和冷却介质出口。
6. 根据权利要求1所述的用于生产超导带材的喷淋器,其特征在于,所述传动装置的传动速度 为0.2m/h。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07331445A (ja) * | 1994-06-01 | 1995-12-19 | Tokyo Electron Ltd | 処理装置及び該処理装置に用いられるカバー体の洗浄方法 |
JPH11131239A (ja) * | 1997-10-31 | 1999-05-18 | Japan Aviation Electron Ind Ltd | プラズマcvd成膜方法および装置 |
JP2000058294A (ja) * | 1998-08-07 | 2000-02-25 | Furontekku:Kk | プラズマ処理装置 |
JP2009249651A (ja) * | 2008-04-01 | 2009-10-29 | Sharp Corp | 気相成長装置及び気相成長方法 |
WO2010109915A1 (ja) * | 2009-03-27 | 2010-09-30 | シャープ株式会社 | 気相成長装置及び気相成長方法 |
JP2013026358A (ja) * | 2011-07-20 | 2013-02-04 | Sharp Corp | シャワープレート及び気相成長装置 |
CN103668114A (zh) * | 2012-09-19 | 2014-03-26 | 甘志银 | 金属有机物化学气相沉积设备喷淋盘的清洁装置及其方法 |
DE102016121109A1 (de) * | 2015-11-05 | 2017-05-11 | Nuflare Technology, Inc. | Duschkopf, Dampfphasenwachstumsvorrichtung und Dampfphasenwachstumsverfahren |
CN108531886A (zh) * | 2017-03-01 | 2018-09-14 | 广东昭信半导体装备制造有限公司 | 一种可拆卸式化学气相沉积喷淋装置 |
-
2021
- 2021-12-30 CN CN202111653641.3A patent/CN114214608B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07331445A (ja) * | 1994-06-01 | 1995-12-19 | Tokyo Electron Ltd | 処理装置及び該処理装置に用いられるカバー体の洗浄方法 |
JPH11131239A (ja) * | 1997-10-31 | 1999-05-18 | Japan Aviation Electron Ind Ltd | プラズマcvd成膜方法および装置 |
JP2000058294A (ja) * | 1998-08-07 | 2000-02-25 | Furontekku:Kk | プラズマ処理装置 |
JP2009249651A (ja) * | 2008-04-01 | 2009-10-29 | Sharp Corp | 気相成長装置及び気相成長方法 |
WO2010109915A1 (ja) * | 2009-03-27 | 2010-09-30 | シャープ株式会社 | 気相成長装置及び気相成長方法 |
JP2013026358A (ja) * | 2011-07-20 | 2013-02-04 | Sharp Corp | シャワープレート及び気相成長装置 |
CN103668114A (zh) * | 2012-09-19 | 2014-03-26 | 甘志银 | 金属有机物化学气相沉积设备喷淋盘的清洁装置及其方法 |
DE102016121109A1 (de) * | 2015-11-05 | 2017-05-11 | Nuflare Technology, Inc. | Duschkopf, Dampfphasenwachstumsvorrichtung und Dampfphasenwachstumsverfahren |
CN108531886A (zh) * | 2017-03-01 | 2018-09-14 | 广东昭信半导体装备制造有限公司 | 一种可拆卸式化学气相沉积喷淋装置 |
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