DE68917164D1 - Anlage zur mikrowellenchemischen Dampfphasenabscheidung. - Google Patents

Anlage zur mikrowellenchemischen Dampfphasenabscheidung.

Info

Publication number
DE68917164D1
DE68917164D1 DE68917164T DE68917164T DE68917164D1 DE 68917164 D1 DE68917164 D1 DE 68917164D1 DE 68917164 T DE68917164 T DE 68917164T DE 68917164 T DE68917164 T DE 68917164T DE 68917164 D1 DE68917164 D1 DE 68917164D1
Authority
DE
Germany
Prior art keywords
plant
vapor deposition
chemical vapor
microwave chemical
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917164T
Other languages
English (en)
Other versions
DE68917164T2 (de
Inventor
Hiroshi Echizen
Satoshi Takaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE68917164D1 publication Critical patent/DE68917164D1/de
Application granted granted Critical
Publication of DE68917164T2 publication Critical patent/DE68917164T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE68917164T 1988-02-01 1989-01-30 Anlage zur mikrowellenchemischen Dampfphasenabscheidung. Expired - Fee Related DE68917164T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63021797A JPH01198478A (ja) 1988-02-01 1988-02-01 マイクロ波プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
DE68917164D1 true DE68917164D1 (de) 1994-09-08
DE68917164T2 DE68917164T2 (de) 1994-12-01

Family

ID=12065041

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917164T Expired - Fee Related DE68917164T2 (de) 1988-02-01 1989-01-30 Anlage zur mikrowellenchemischen Dampfphasenabscheidung.

Country Status (5)

Country Link
US (2) US5069928A (de)
EP (1) EP0326998B1 (de)
JP (1) JPH01198478A (de)
CN (1) CN1029994C (de)
DE (1) DE68917164T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198478A (ja) * 1988-02-01 1989-08-10 Canon Inc マイクロ波プラズマｃｖｄ装置
JPH02141578A (ja) * 1988-11-24 1990-05-30 Canon Inc 堆積膜形成装置
JPH03264676A (ja) * 1990-03-13 1991-11-25 Canon Inc 連続堆積膜形成装置
JP2966029B2 (ja) * 1990-03-30 1999-10-25 新日本無線株式会社 マイクロ波プラズマｃｖｄ装置
US5837978A (en) * 1990-07-11 1998-11-17 International Business Machines Corporation Radiation control system
JP2581842B2 (ja) * 1990-11-19 1997-02-12 動力炉・核燃料開発事業団 マイクロ波加熱装置
JPH0633246A (ja) * 1992-07-21 1994-02-08 Canon Inc 堆積膜形成方法および堆積膜形成装置
US5471037A (en) * 1992-08-18 1995-11-28 E. I. Du Pont De Nemours And Company Process for preparing polymeric material with microwave
US5532462A (en) * 1994-04-29 1996-07-02 Communications & Power Industries Method of and apparatus for heating a reaction vessel with microwave energy
EP0702393A3 (de) * 1994-09-16 1997-03-26 Daihen Corp Plasmabearbeitungsgerät zur Mikrowellen-Einstrahlung aus einem rechteckigen Wellenleiter durch einem langgestrekten Schlitz in der Plasmakammer
US6161498A (en) * 1995-09-14 2000-12-19 Tokyo Electron Limited Plasma processing device and a method of plasma process
US6076481A (en) * 1996-04-03 2000-06-20 Canon Kabushiki Kaisha Plasma processing apparatus and plasma processing method
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
US6715441B2 (en) * 1997-12-31 2004-04-06 Plasma Optical Fibre B.V. PCVD apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith
US6057645A (en) * 1997-12-31 2000-05-02 Eaton Corporation Plasma discharge device with dynamic tuning by a movable microwave trap
DE10010766B4 (de) * 2000-03-04 2006-11-30 Schott Ag Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten
CN1318643C (zh) * 2003-04-30 2007-05-30 佳能株式会社 淀积膜形成方法以及装置
US20090021328A1 (en) * 2005-02-09 2009-01-22 Adrian Haldimann Microwave unit
US20060231207A1 (en) * 2005-03-31 2006-10-19 Rebinsky Douglas A System and method for surface treatment
JP2007220499A (ja) * 2006-02-17 2007-08-30 Noritsu Koki Co Ltd プラズマ発生装置およびそれを用いるワーク処理装置
EP2259662B1 (de) * 2008-03-26 2019-06-26 Kyosan Electric Mfg. Co., Ltd. Vorrichtung zur unterdrückung abnormer entladungen für eine unterdruckvorrichtung
JP5285418B2 (ja) * 2008-12-24 2013-09-11 株式会社豊田自動織機 共鳴型非接触電力供給装置
WO2011027963A2 (ko) * 2009-09-01 2011-03-10 엘지전자 주식회사 마이크로웨이브를 이용한 조리기기
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
ES2696227B2 (es) * 2018-07-10 2019-06-12 Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat Fuente de iones interna para ciclotrones de baja erosion

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939178B2 (ja) * 1977-04-25 1984-09-21 株式会社東芝 活性化ガス発生装置
JPS55131175A (en) * 1979-03-30 1980-10-11 Toshiba Corp Surface treatment apparatus with microwave plasma
JPS57133636A (en) * 1981-02-13 1982-08-18 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma at low temperature
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
JPS5849295A (ja) * 1981-09-17 1983-03-23 Konishiroku Photo Ind Co Ltd 光学的情報記録媒体
JPS5943991A (ja) * 1982-09-02 1984-03-12 Sanyo Electric Co Ltd 圧縮機の消音装置
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
US4507588A (en) * 1983-02-28 1985-03-26 Board Of Trustees Operating Michigan State University Ion generating apparatus and method for the use thereof
US4585668A (en) * 1983-02-28 1986-04-29 Michigan State University Method for treating a surface with a microwave or UHF plasma and improved apparatus
US4478173A (en) * 1983-04-18 1984-10-23 Energy Conversion Devices, Inc. Method and apparatus for sensing and controlling the intensity of energy in a deposition system
JPS59103331A (ja) * 1983-09-21 1984-06-14 Hitachi Ltd プラズマ処理装置
US4727293A (en) * 1984-08-16 1988-02-23 Board Of Trustees Operating Michigan State University Plasma generating apparatus using magnets and method
JPH0755737B2 (ja) * 1985-08-08 1995-06-14 富士ゼロックス株式会社 複写機の給紙装置
US4617531A (en) * 1985-09-13 1986-10-14 General Electric Company Directly modulated microwave oscillator having adjustable load coupling
IN165491B (de) * 1986-01-06 1989-11-04 Rank Taylor Hobson Ltd
JPH0740566B2 (ja) * 1986-02-04 1995-05-01 株式会社日立製作所 プラズマ処理方法及びその装置
US4673894A (en) * 1986-04-10 1987-06-16 California Microwave, Incorporated Oscillator coupled through cylindrical cavity for generating low noise microwaves
JPS63100186A (ja) * 1986-10-15 1988-05-02 Canon Inc マイクロ波プラズマ処理装置
US4866346A (en) * 1987-06-22 1989-09-12 Applied Science & Technology, Inc. Microwave plasma generator
JPH01198478A (ja) * 1988-02-01 1989-08-10 Canon Inc マイクロ波プラズマｃｖｄ装置

Also Published As

Publication number Publication date
EP0326998B1 (de) 1994-08-03
EP0326998A3 (en) 1989-11-15
US5069928A (en) 1991-12-03
CN1029994C (zh) 1995-10-11
JPH01198478A (ja) 1989-08-10
EP0326998A2 (de) 1989-08-09
CN1036233A (zh) 1989-10-11
US6253703B1 (en) 2001-07-03
DE68917164T2 (de) 1994-12-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee