DE69017354D1 - Dampfablagerungsapparat. - Google Patents
Dampfablagerungsapparat.Info
- Publication number
- DE69017354D1 DE69017354D1 DE69017354T DE69017354T DE69017354D1 DE 69017354 D1 DE69017354 D1 DE 69017354D1 DE 69017354 T DE69017354 T DE 69017354T DE 69017354 T DE69017354 T DE 69017354T DE 69017354 D1 DE69017354 D1 DE 69017354D1
- Authority
- DE
- Germany
- Prior art keywords
- vapor deposition
- deposition apparatus
- vapor
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1286454A JPH0818902B2 (ja) | 1989-11-02 | 1989-11-02 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69017354D1 true DE69017354D1 (de) | 1995-04-06 |
DE69017354T2 DE69017354T2 (de) | 1995-09-28 |
Family
ID=17704602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69017354T Expired - Fee Related DE69017354T2 (de) | 1989-11-02 | 1990-11-02 | Dampfablagerungsapparat. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5334250A (de) |
EP (1) | EP0426494B1 (de) |
JP (1) | JPH0818902B2 (de) |
DE (1) | DE69017354T2 (de) |
FI (1) | FI95150C (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6337102B1 (en) * | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
WO2002080225A2 (en) * | 2001-03-30 | 2002-10-10 | Technologies And Devices International Inc. | Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques |
KR20030002070A (ko) * | 2001-06-30 | 2003-01-08 | 삼성전자 주식회사 | 원심력을 이용한 비점착 웨이퍼 건조방법 및 장치 |
US6613143B1 (en) * | 2001-07-06 | 2003-09-02 | Technologies And Devices International, Inc. | Method for fabricating bulk GaN single crystals |
US20070032046A1 (en) * | 2001-07-06 | 2007-02-08 | Dmitriev Vladimir A | Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby |
US20060011135A1 (en) * | 2001-07-06 | 2006-01-19 | Dmitriev Vladimir A | HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run |
US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
JP4714422B2 (ja) * | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
KR100792396B1 (ko) * | 2005-10-11 | 2008-01-08 | 주식회사 유진테크 | 파티션 구조형 가열유닛과 이를 이용한 히팅장치 |
US9416464B1 (en) | 2006-10-11 | 2016-08-16 | Ostendo Technologies, Inc. | Apparatus and methods for controlling gas flows in a HVPE reactor |
KR20090125087A (ko) * | 2007-02-20 | 2009-12-03 | 퀄컴 엠이엠스 테크놀로지스, 인크. | 마이크로전자기계 시스템〔mems〕의 에칭장치 및 에칭 방법 |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7569488B2 (en) | 2007-06-22 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | Methods of making a MEMS device by monitoring a process parameter |
RU2471210C2 (ru) | 2007-07-25 | 2012-12-27 | Квалкомм Мемс Текнолоджис, Инк. | Дисплеи на основе микроэлектромеханических систем и способы их изготовления |
US8023191B2 (en) * | 2008-05-07 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Printable static interferometric images |
US9343273B2 (en) * | 2008-09-25 | 2016-05-17 | Seagate Technology Llc | Substrate holders for uniform reactive sputtering |
JPWO2011108640A1 (ja) * | 2010-03-04 | 2013-06-27 | Jx日鉱日石金属株式会社 | 結晶成長装置、窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体結晶 |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
CN106103790B (zh) * | 2014-03-11 | 2018-12-07 | 株式会社日本有机雷特显示器 | 蒸镀装置及其控制方法、使用了蒸镀装置的蒸镀方法、以及器件的制造方法 |
JP6241903B2 (ja) * | 2014-03-11 | 2017-12-06 | 株式会社Joled | 蒸着装置及び蒸着装置を用いた蒸着方法、及びデバイスの製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3098763A (en) * | 1961-05-29 | 1963-07-23 | Raytheon Co | Chemical reactor |
US3310425A (en) * | 1963-06-28 | 1967-03-21 | Rca Corp | Method of depositing epitaxial layers of gallium arsenide |
US3424629A (en) * | 1965-12-13 | 1969-01-28 | Ibm | High capacity epitaxial apparatus and method |
US3858548A (en) * | 1972-08-16 | 1975-01-07 | Corning Glass Works | Vapor transport film deposition apparatus |
JPS544566A (en) * | 1977-06-13 | 1979-01-13 | Nec Corp | Vapor phase growth method of semiconductor |
JPS5931985B2 (ja) * | 1977-11-14 | 1984-08-06 | 富士通株式会社 | マグネスピネルの気相成長法 |
DD206687A3 (de) * | 1981-07-28 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor |
US4487640A (en) * | 1983-02-22 | 1984-12-11 | The United States Of America As Represented By The Secretary Of The Air Force | Method for the preparation of epitaxial films of mercury cadmium telluride |
JPS59207622A (ja) * | 1983-05-11 | 1984-11-24 | Furukawa Electric Co Ltd:The | 半導体薄膜気相成長装置 |
JPS6065526A (ja) * | 1983-09-20 | 1985-04-15 | Nec Corp | 多元混晶3−5族化合物半導体成長方法及び装置 |
JPS60215594A (ja) * | 1984-04-06 | 1985-10-28 | Fujitsu Ltd | 気相成長装置 |
JPS60253212A (ja) * | 1984-05-30 | 1985-12-13 | Toshiba Mach Co Ltd | 気相成長装置 |
JPS61101021A (ja) * | 1984-10-24 | 1986-05-19 | Hitachi Ltd | 膜形成装置 |
JPH07105345B2 (ja) * | 1985-08-08 | 1995-11-13 | 日電アネルバ株式会社 | 基体処理装置 |
JPS6291496A (ja) * | 1985-10-15 | 1987-04-25 | Nec Corp | 気相成長装置用反応管 |
JPH0691020B2 (ja) * | 1986-02-14 | 1994-11-14 | 日本電信電話株式会社 | 気相成長方法および装置 |
JPS6335776A (ja) * | 1986-07-30 | 1988-02-16 | Matsushita Electronics Corp | 気相化学蒸着装置 |
US4886412A (en) * | 1986-10-28 | 1989-12-12 | Tetron, Inc. | Method and system for loading wafers |
JPH01108744A (ja) * | 1987-10-22 | 1989-04-26 | Oki Electric Ind Co Ltd | 半導体製造装置 |
US4854266A (en) * | 1987-11-02 | 1989-08-08 | Btu Engineering Corporation | Cross-flow diffusion furnace |
JPH0760738B2 (ja) * | 1988-05-13 | 1995-06-28 | シャープ株式会社 | エレクトロルミネッセンス発光膜の製造方法 |
-
1989
- 1989-11-02 JP JP1286454A patent/JPH0818902B2/ja not_active Expired - Fee Related
-
1990
- 1990-10-30 FI FI905349A patent/FI95150C/fi not_active IP Right Cessation
- 1990-11-02 DE DE69017354T patent/DE69017354T2/de not_active Expired - Fee Related
- 1990-11-02 EP EP90312034A patent/EP0426494B1/de not_active Expired - Lifetime
-
1993
- 1993-02-17 US US08/022,742 patent/US5334250A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH03150293A (ja) | 1991-06-26 |
FI95150B (fi) | 1995-09-15 |
EP0426494A1 (de) | 1991-05-08 |
FI905349A0 (fi) | 1990-10-30 |
EP0426494B1 (de) | 1995-03-01 |
DE69017354T2 (de) | 1995-09-28 |
JPH0818902B2 (ja) | 1996-02-28 |
US5334250A (en) | 1994-08-02 |
FI95150C (fi) | 1995-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |