US5798027A
(en)
*
|
1988-02-08 |
1998-08-25 |
Optical Coating Laboratory, Inc. |
Process for depositing optical thin films on both planar and non-planar substrates
|
US5225057A
(en)
*
|
1988-02-08 |
1993-07-06 |
Optical Coating Laboratory, Inc. |
Process for depositing optical films on both planar and non-planar substrates
|
US5618388A
(en)
*
|
1988-02-08 |
1997-04-08 |
Optical Coating Laboratory, Inc. |
Geometries and configurations for magnetron sputtering apparatus
|
US5635036A
(en)
*
|
1990-01-26 |
1997-06-03 |
Varian Associates, Inc. |
Collimated deposition apparatus and method
|
US6521106B1
(en)
*
|
1990-01-29 |
2003-02-18 |
Novellus Systems, Inc. |
Collimated deposition apparatus
|
DE69129081T2
(de)
*
|
1990-01-29 |
1998-07-02 |
Varian Associates |
Gerät und Verfahren zur Niederschlagung durch einen Kollimator
|
JPH06508001A
(ja)
*
|
1991-04-19 |
1994-09-08 |
サーフィス ソリューションズ インコーポレーテッド |
線形磁電管スパッタリング方法及び装置
|
CA2061119C
(en)
*
|
1991-04-19 |
1998-02-03 |
Pei-Ing P. Lee |
Method of depositing conductors in high aspect ratio apertures
|
JP2725944B2
(ja)
*
|
1991-04-19 |
1998-03-11 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
金属層堆積方法
|
JPH05160070A
(ja)
*
|
1991-05-31 |
1993-06-25 |
Texas Instr Inc <Ti> |
半導体装置の接点とその製法
|
US5171412A
(en)
*
|
1991-08-23 |
1992-12-15 |
Applied Materials, Inc. |
Material deposition method for integrated circuit manufacturing
|
US5482611A
(en)
*
|
1991-09-30 |
1996-01-09 |
Helmer; John C. |
Physical vapor deposition employing ion extraction from a plasma
|
US5223108A
(en)
*
|
1991-12-30 |
1993-06-29 |
Materials Research Corporation |
Extended lifetime collimator
|
US5262354A
(en)
*
|
1992-02-26 |
1993-11-16 |
International Business Machines Corporation |
Refractory metal capped low resistivity metal conductor lines and vias
|
US5300813A
(en)
*
|
1992-02-26 |
1994-04-05 |
International Business Machines Corporation |
Refractory metal capped low resistivity metal conductor lines and vias
|
EP0564028B1
(de)
*
|
1992-04-02 |
1997-07-16 |
Koninklijke Philips Electronics N.V. |
Verfahren zum Herstellen einer zugespitzten Elektrode
|
US5371042A
(en)
*
|
1992-06-16 |
1994-12-06 |
Applied Materials, Inc. |
Method of filling contacts in semiconductor devices
|
US5279723A
(en)
*
|
1992-07-30 |
1994-01-18 |
As Represented By The United States Department Of Energy |
Filtered cathodic arc source
|
US5282944A
(en)
*
|
1992-07-30 |
1994-02-01 |
The United States Of America As Represented By The United States Department Of Energy |
Ion source based on the cathodic arc
|
JPH0665731A
(ja)
*
|
1992-08-24 |
1994-03-08 |
Mitsubishi Electric Corp |
半導体製造装置
|
JPH06108242A
(ja)
*
|
1992-09-25 |
1994-04-19 |
Minolta Camera Co Ltd |
薄膜電極および薄膜製造装置
|
CA2111536A1
(en)
*
|
1992-12-16 |
1994-06-17 |
Geri M. Actor |
Collimated deposition apparatus
|
US5384281A
(en)
*
|
1992-12-29 |
1995-01-24 |
International Business Machines Corporation |
Non-conformal and oxidizable etch stops for submicron features
|
US5358616A
(en)
*
|
1993-02-17 |
1994-10-25 |
Ward Michael G |
Filling of vias and contacts employing an aluminum-germanium alloy
|
JPH06314744A
(ja)
*
|
1993-04-28 |
1994-11-08 |
Fujitsu Ltd |
半導体装置の製造方法
|
US5403459A
(en)
*
|
1993-05-17 |
1995-04-04 |
Applied Materials, Inc. |
Cleaning of a PVD chamber containing a collimator
|
US5362372A
(en)
*
|
1993-06-11 |
1994-11-08 |
Applied Materials, Inc. |
Self cleaning collimator
|
KR960005377Y1
(ko)
*
|
1993-06-24 |
1996-06-28 |
현대전자산업 주식회사 |
반도체 소자 제조용 스퍼터링 장치
|
JPH0718423A
(ja)
*
|
1993-07-06 |
1995-01-20 |
Japan Energy Corp |
薄膜形成装置
|
JP2707951B2
(ja)
*
|
1993-07-15 |
1998-02-04 |
日本電気株式会社 |
スパッタ方法
|
US5415753A
(en)
*
|
1993-07-22 |
1995-05-16 |
Materials Research Corporation |
Stationary aperture plate for reactive sputter deposition
|
DE4325051C1
(de)
*
|
1993-07-26 |
1994-07-07 |
Siemens Ag |
Anordnung zur Abscheidung einer Schicht auf einer Substratscheibe durch Kathodenstrahlzerstäuben und Verfahren zu deren Betrieb
|
US5382339A
(en)
*
|
1993-09-17 |
1995-01-17 |
Applied Materials, Inc. |
Shield and collimator pasting deposition chamber with a side pocket for pasting the bottom of the collimator
|
US5431799A
(en)
*
|
1993-10-29 |
1995-07-11 |
Applied Materials, Inc. |
Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
|
US5958193A
(en)
*
|
1994-02-01 |
1999-09-28 |
Vlsi Technology, Inc. |
Sputter deposition with mobile collimator
|
US5484640A
(en)
*
|
1994-02-16 |
1996-01-16 |
Eldim, Inc. |
Honeycomb structure having stiffening ribs and method and apparatus for making same
|
KR970009828B1
(en)
*
|
1994-02-23 |
1997-06-18 |
Sansung Electronics Co Ltd |
Fabrication method of collimator
|
TW278206B
(de)
*
|
1994-03-28 |
1996-06-11 |
Materials Research Corp |
|
US5711858A
(en)
*
|
1994-04-12 |
1998-01-27 |
International Business Machines Corporation |
Process for depositing a conductive thin film upon an integrated circuit substrate
|
JPH0860355A
(ja)
*
|
1994-08-23 |
1996-03-05 |
Tel Varian Ltd |
処理装置
|
JP2671835B2
(ja)
*
|
1994-10-20 |
1997-11-05 |
日本電気株式会社 |
スパッタ装置とその装置を用いた半導体装置の製造方法
|
WO1996018209A1
(de)
*
|
1994-12-07 |
1996-06-13 |
Siemens Aktiengesellschaft |
Sputterreaktor und verfahren zu dessen betrieb
|
US5527438A
(en)
*
|
1994-12-16 |
1996-06-18 |
Applied Materials, Inc. |
Cylindrical sputtering shield
|
US5516403A
(en)
|
1994-12-16 |
1996-05-14 |
Applied Materials |
Reversing orientation of sputtering screen to avoid contamination
|
JP2689931B2
(ja)
*
|
1994-12-29 |
1997-12-10 |
日本電気株式会社 |
スパッタ方法
|
US5643428A
(en)
*
|
1995-02-01 |
1997-07-01 |
Advanced Micro Devices, Inc. |
Multiple tier collimator system for enhanced step coverage and uniformity
|
US6030511A
(en)
*
|
1995-02-03 |
2000-02-29 |
Nec Corporation |
Collimated sputtering method and system used therefor
|
US5885425A
(en)
*
|
1995-06-06 |
1999-03-23 |
International Business Machines Corporation |
Method for selective material deposition on one side of raised or recessed features
|
US5757879A
(en)
*
|
1995-06-07 |
1998-05-26 |
International Business Machines Corporation |
Tungsten absorber for x-ray mask
|
AU1978497A
(en)
*
|
1996-03-22 |
1997-10-10 |
Materials Research Corporation |
Method and apparatus for rf diode sputtering
|
JP2894279B2
(ja)
*
|
1996-06-10 |
1999-05-24 |
日本電気株式会社 |
金属薄膜形成方法
|
US6429120B1
(en)
|
2000-01-18 |
2002-08-06 |
Micron Technology, Inc. |
Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
|
US5725739A
(en)
*
|
1996-07-08 |
1998-03-10 |
Micron Technology, Inc. |
Low angle, low energy physical vapor deposition of alloys
|
US5827408A
(en)
*
|
1996-07-26 |
1998-10-27 |
Applied Materials, Inc |
Method and apparatus for improving the conformality of sputter deposited films
|
DE19641584C1
(de)
*
|
1996-09-30 |
1998-01-08 |
Siemens Ag |
Anordnung und Verfahren zum Aufbringen einer dünnen Schicht auf ein Substrat
|
US5783282A
(en)
*
|
1996-10-07 |
1998-07-21 |
Micron Technology, Inc. |
Resputtering to achieve better step coverage of contact holes
|
US5961793A
(en)
*
|
1996-10-31 |
1999-10-05 |
Applied Materials, Inc. |
Method of reducing generation of particulate matter in a sputtering chamber
|
AUPO338396A0
(en)
*
|
1996-11-04 |
1996-11-28 |
Sola International Holdings Ltd |
Sputter coating apparatus
|
TW358964B
(en)
*
|
1996-11-21 |
1999-05-21 |
Applied Materials Inc |
Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
|
US6451179B1
(en)
|
1997-01-30 |
2002-09-17 |
Applied Materials, Inc. |
Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
|
JPH10219430A
(ja)
*
|
1997-02-05 |
1998-08-18 |
Minolta Co Ltd |
マグネトロンスパッタ法により得られる化合物薄膜ならびにそれを製造するための方法および装置
|
EP0860513A3
(de)
*
|
1997-02-19 |
2000-01-12 |
Canon Kabushiki Kaisha |
Vorrichtung und Verfahren zum Herstellen von Dünnschichten
|
KR100277321B1
(ko)
*
|
1997-02-19 |
2001-01-15 |
미다라이 후지오 |
반응성스퍼터링장치및이를이용하는박막형성방법
|
US5855745A
(en)
*
|
1997-04-23 |
1999-01-05 |
Sierra Applied Sciences, Inc. |
Plasma processing system utilizing combined anode/ ion source
|
US6692617B1
(en)
*
|
1997-05-08 |
2004-02-17 |
Applied Materials, Inc. |
Sustained self-sputtering reactor having an increased density plasma
|
US6042700A
(en)
*
|
1997-09-15 |
2000-03-28 |
Applied Materials, Inc. |
Adjustment of deposition uniformity in an inductively coupled plasma source
|
US6023038A
(en)
*
|
1997-09-16 |
2000-02-08 |
Applied Materials, Inc. |
Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
|
DE19744060C2
(de)
*
|
1997-10-06 |
1999-08-12 |
Fraunhofer Ges Forschung |
Verfahren und Vorrichtung zur Oberflächenbehandlung von Substraten
|
US6036821A
(en)
*
|
1998-01-29 |
2000-03-14 |
International Business Machines Corporation |
Enhanced collimated sputtering apparatus and its method of use
|
US6482301B1
(en)
|
1998-06-04 |
2002-11-19 |
Seagate Technology, Inc. |
Target shields for improved magnetic properties of a recording medium
|
US6362097B1
(en)
*
|
1998-07-14 |
2002-03-26 |
Applied Komatsu Technlology, Inc. |
Collimated sputtering of semiconductor and other films
|
US6352626B1
(en)
|
1999-04-19 |
2002-03-05 |
Von Zweck Heimart |
Sputter ion source for boron and other targets
|
US7262130B1
(en)
*
|
2000-01-18 |
2007-08-28 |
Micron Technology, Inc. |
Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
|
US7211512B1
(en)
*
|
2000-01-18 |
2007-05-01 |
Micron Technology, Inc. |
Selective electroless-plated copper metallization
|
US6420262B1
(en)
|
2000-01-18 |
2002-07-16 |
Micron Technology, Inc. |
Structures and methods to enhance copper metallization
|
US6436252B1
(en)
|
2000-04-07 |
2002-08-20 |
Surface Engineered Products Corp. |
Method and apparatus for magnetron sputtering
|
WO2002043466A2
(en)
*
|
2000-11-30 |
2002-06-06 |
North Carolina State University |
Non-thermionic sputter material transport device, methods of use, and materials produced thereby
|
ATE528421T1
(de)
|
2000-11-30 |
2011-10-15 |
Univ North Carolina State |
Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien
|
JP2005504885A
(ja)
|
2001-07-25 |
2005-02-17 |
アプライド マテリアルズ インコーポレイテッド |
新規なスパッタ堆積方法を使用したバリア形成
|
US20030029715A1
(en)
|
2001-07-25 |
2003-02-13 |
Applied Materials, Inc. |
An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
|
US20090004850A1
(en)
|
2001-07-25 |
2009-01-01 |
Seshadri Ganguli |
Process for forming cobalt and cobalt silicide materials in tungsten contact applications
|
US8110489B2
(en)
|
2001-07-25 |
2012-02-07 |
Applied Materials, Inc. |
Process for forming cobalt-containing materials
|
US9051641B2
(en)
|
2001-07-25 |
2015-06-09 |
Applied Materials, Inc. |
Cobalt deposition on barrier surfaces
|
KR100466962B1
(ko)
*
|
2001-12-27 |
2005-01-24 |
엘지.필립스 엘시디 주식회사 |
폴리실리콘 박막트랜지스터의 제조방법
|
DE10208904B4
(de)
*
|
2002-02-28 |
2007-03-01 |
Advanced Micro Devices, Inc., Sunnyvale |
Verfahren zur Herstellung unterschiedlicher Silicidbereiche auf verschiedenen Silicium enthaltenden Gebieten in einem Halbleiterelement
|
JP2005520341A
(ja)
*
|
2002-02-28 |
2005-07-07 |
アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド |
異なる金属シリサイド部分を有する半導体デバイスを製造する方法
|
US7355687B2
(en)
*
|
2003-02-20 |
2008-04-08 |
Hunter Engineering Company |
Method and apparatus for vehicle service system with imaging components
|
US7695590B2
(en)
*
|
2004-03-26 |
2010-04-13 |
Applied Materials, Inc. |
Chemical vapor deposition plasma reactor having plural ion shower grids
|
US20050211171A1
(en)
*
|
2004-03-26 |
2005-09-29 |
Applied Materials, Inc. |
Chemical vapor deposition plasma reactor having an ion shower grid
|
US7244474B2
(en)
*
|
2004-03-26 |
2007-07-17 |
Applied Materials, Inc. |
Chemical vapor deposition plasma process using an ion shower grid
|
US20050211547A1
(en)
*
|
2004-03-26 |
2005-09-29 |
Applied Materials, Inc. |
Reactive sputter deposition plasma reactor and process using plural ion shower grids
|
US20050211546A1
(en)
*
|
2004-03-26 |
2005-09-29 |
Applied Materials, Inc. |
Reactive sputter deposition plasma process using an ion shower grid
|
US7291360B2
(en)
*
|
2004-03-26 |
2007-11-06 |
Applied Materials, Inc. |
Chemical vapor deposition plasma process using plural ion shower grids
|
US7767561B2
(en)
*
|
2004-07-20 |
2010-08-03 |
Applied Materials, Inc. |
Plasma immersion ion implantation reactor having an ion shower grid
|
US8058156B2
(en)
*
|
2004-07-20 |
2011-11-15 |
Applied Materials, Inc. |
Plasma immersion ion implantation reactor having multiple ion shower grids
|
JP4923450B2
(ja)
*
|
2005-07-01 |
2012-04-25 |
富士ゼロックス株式会社 |
バッチ処理支援装置および方法、プログラム
|
US20070012663A1
(en)
*
|
2005-07-13 |
2007-01-18 |
Akihiro Hosokawa |
Magnetron sputtering system for large-area substrates having removable anodes
|
US20070012559A1
(en)
*
|
2005-07-13 |
2007-01-18 |
Applied Materials, Inc. |
Method of improving magnetron sputtering of large-area substrates using a removable anode
|
US20070084720A1
(en)
*
|
2005-07-13 |
2007-04-19 |
Akihiro Hosokawa |
Magnetron sputtering system for large-area substrates having removable anodes
|
US20070012558A1
(en)
*
|
2005-07-13 |
2007-01-18 |
Applied Materials, Inc. |
Magnetron sputtering system for large-area substrates
|
US20070051616A1
(en)
*
|
2005-09-07 |
2007-03-08 |
Le Hienminh H |
Multizone magnetron assembly
|
US7588668B2
(en)
*
|
2005-09-13 |
2009-09-15 |
Applied Materials, Inc. |
Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
|
US20070056850A1
(en)
*
|
2005-09-13 |
2007-03-15 |
Applied Materials, Inc. |
Large-area magnetron sputtering chamber with individually controlled sputtering zones
|
US20070056843A1
(en)
*
|
2005-09-13 |
2007-03-15 |
Applied Materials, Inc. |
Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
|
US7951276B2
(en)
*
|
2006-06-08 |
2011-05-31 |
The Board Of Trustees Of The University Of Illinois |
Cluster generator
|
JP2008193005A
(ja)
*
|
2007-02-07 |
2008-08-21 |
Eudyna Devices Inc |
半導体装置の製造方法
|
US7897418B2
(en)
|
2007-12-28 |
2011-03-01 |
Mitsubishi Electric Corporation |
Method for manufacturing semiconductor light emitting device
|
KR101046335B1
(ko)
*
|
2008-07-29 |
2011-07-05 |
피에스케이 주식회사 |
할로우 캐소드 플라즈마 발생방법 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리방법
|
US9431218B2
(en)
|
2013-03-15 |
2016-08-30 |
Tokyo Electron Limited |
Scalable and uniformity controllable diffusion plasma source
|
US20150020974A1
(en)
*
|
2013-07-19 |
2015-01-22 |
Psk Inc. |
Baffle and apparatus for treating surface of baffle, and substrate treating apparatus
|
TWI651427B
(zh)
*
|
2017-10-17 |
2019-02-21 |
國立中興大學 |
應用於有機發光二極體的透明導電氧化薄膜製程方法及裝置
|
DE102018112335A1
(de)
*
|
2018-05-23 |
2019-11-28 |
Hartmetall-Werkzeugfabrik Paul Horn Gmbh |
Magnetronsputtervorrichtung
|