DE3884158T2 - Sputteranlage. - Google Patents

Sputteranlage.

Info

Publication number
DE3884158T2
DE3884158T2 DE88120657T DE3884158T DE3884158T2 DE 3884158 T2 DE3884158 T2 DE 3884158T2 DE 88120657 T DE88120657 T DE 88120657T DE 3884158 T DE3884158 T DE 3884158T DE 3884158 T2 DE3884158 T2 DE 3884158T2
Authority
DE
Germany
Prior art keywords
sputtering system
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88120657T
Other languages
English (en)
Other versions
DE3884158D1 (de
Inventor
Toshihiko C O Patent D Katsura
Masahiro C O Patent Divisi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3884158D1 publication Critical patent/DE3884158D1/de
Publication of DE3884158T2 publication Critical patent/DE3884158T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE88120657T 1987-12-09 1988-12-09 Sputteranlage. Expired - Fee Related DE3884158T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62311277A JPH01152271A (ja) 1987-12-09 1987-12-09 スパッタ装置

Publications (2)

Publication Number Publication Date
DE3884158D1 DE3884158D1 (de) 1993-10-21
DE3884158T2 true DE3884158T2 (de) 1994-01-13

Family

ID=18015197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88120657T Expired - Fee Related DE3884158T2 (de) 1987-12-09 1988-12-09 Sputteranlage.

Country Status (5)

Country Link
US (1) US4933063A (de)
EP (1) EP0320016B1 (de)
JP (1) JPH01152271A (de)
KR (1) KR910009607B1 (de)
DE (1) DE3884158T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013107167A1 (de) 2013-07-08 2015-01-08 Von Ardenne Gmbh Anordnung zum Schutz von Einbauten in Vakuumkammern

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02163368A (ja) * 1988-12-15 1990-06-22 Matsushita Electric Ind Co Ltd スパッタリング装置
JP2612057B2 (ja) * 1988-12-20 1997-05-21 三菱電機株式会社 真空成膜装置の運転方法
DE4108001C1 (de) * 1991-03-13 1992-07-09 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
WO1992016671A1 (en) * 1991-03-20 1992-10-01 Canon Kabushiki Kaisha Method and device for forming film by sputtering process
KR100290748B1 (ko) * 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
US6246247B1 (en) 1994-11-15 2001-06-12 Formfactor, Inc. Probe card assembly and kit, and methods of using same
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
US5518593A (en) * 1994-04-29 1996-05-21 Applied Komatsu Technology, Inc. Shield configuration for vacuum chamber
US5595241A (en) * 1994-10-07 1997-01-21 Sony Corporation Wafer heating chuck with dual zone backplane heating and segmented clamping member
JP2671835B2 (ja) * 1994-10-20 1997-11-05 日本電気株式会社 スパッタ装置とその装置を用いた半導体装置の製造方法
DE69531996T2 (de) * 1994-11-15 2004-07-22 Formfactor, Inc., Livermore Elektrische kontaktstruktur aus flexiblem draht
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination
US6483328B1 (en) 1995-11-09 2002-11-19 Formfactor, Inc. Probe card for probing wafers with raised contact elements
US6045670A (en) * 1997-01-08 2000-04-04 Applied Materials, Inc. Back sputtering shield
DE19734633C2 (de) * 1997-08-11 1999-08-26 Forschungszentrum Juelich Gmbh Hochdruck-Magnetron-Kathode
US6014082A (en) * 1997-10-03 2000-01-11 Sony Corporation Temperature monitoring and calibration system for control of a heated CVD chuck
US6120660A (en) * 1998-02-11 2000-09-19 Silicon Genesis Corporation Removable liner design for plasma immersion ion implantation
US7262611B2 (en) 2000-03-17 2007-08-28 Formfactor, Inc. Apparatuses and methods for planarizing a semiconductor contactor
JP2001274113A (ja) * 2000-03-23 2001-10-05 Nec Corp 半導体装置の製造方法
JP2002090977A (ja) * 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランク、フォトマスクブランク、並びにそれらの製造装置及び製造方法
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US20040084305A1 (en) * 2002-10-25 2004-05-06 Semiconductor Energy Laboratory Co., Ltd. Sputtering system and manufacturing method of thin film
KR100909418B1 (ko) * 2002-12-27 2009-07-24 엘지디스플레이 주식회사 액정표시장치의 스퍼터링 장치 및 이의 오류시정방법
US20040256215A1 (en) * 2003-04-14 2004-12-23 David Stebbins Sputtering chamber liner
US8500963B2 (en) * 2006-10-26 2013-08-06 Applied Materials, Inc. Sputtering of thermally resistive materials including metal chalcogenides
JP2009091603A (ja) * 2007-10-04 2009-04-30 Ulvac Japan Ltd 光学薄膜の成膜装置及びその制御方法
DE102013221029A1 (de) * 2013-10-16 2015-04-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Herstellung uniformer Schichten auf bewegten Substraten und derart hergestellte Schichten
WO2017031571A1 (en) * 2015-08-22 2017-03-02 Novena Tec Inc. Process chamber shielding system and method
US20180358212A1 (en) * 2015-12-09 2018-12-13 Applied Materials, Inc. System configured for sputter deposition on a substrate, shielding device for a sputter deposition chamber, and method for providing an electrical shielding in a sputter deposition chamber
US11289312B2 (en) * 2019-06-12 2022-03-29 Applied Materials, Inc. Physical vapor deposition (PVD) chamber with in situ chamber cleaning capability
US20230395385A1 (en) * 2022-06-06 2023-12-07 Tokyo Electron Limited Plasma etching tools and systems

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164228A (ja) * 1982-03-25 1983-09-29 Toshiba Corp 誘電体の薄膜形成方法
US4610775A (en) * 1985-07-26 1986-09-09 Westinghouse Electric Corp. Method and apparatus for clearing short-circuited, high-voltage cathodes in a sputtering chamber
DE3634710A1 (de) * 1986-10-11 1988-04-21 Ver Glaswerke Gmbh Vorrichtung zum vakuumbeschichten einer glasscheibe durch reaktive kathodenzerstaeubung
JPH0676657B2 (ja) * 1986-11-10 1994-09-28 日電アネルバ株式会社 スパツタリング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013107167A1 (de) 2013-07-08 2015-01-08 Von Ardenne Gmbh Anordnung zum Schutz von Einbauten in Vakuumkammern

Also Published As

Publication number Publication date
EP0320016B1 (de) 1993-09-15
KR910009607B1 (ko) 1991-11-23
JPH01152271A (ja) 1989-06-14
US4933063A (en) 1990-06-12
JPH0360915B2 (de) 1991-09-18
EP0320016A1 (de) 1989-06-14
DE3884158D1 (de) 1993-10-21
KR890011050A (ko) 1989-08-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee