DE69205494D1 - Beschichtungssystem zur plasmachemischen Gasphasenabscheidung. - Google Patents
Beschichtungssystem zur plasmachemischen Gasphasenabscheidung.Info
- Publication number
- DE69205494D1 DE69205494D1 DE69205494T DE69205494T DE69205494D1 DE 69205494 D1 DE69205494 D1 DE 69205494D1 DE 69205494 T DE69205494 T DE 69205494T DE 69205494 T DE69205494 T DE 69205494T DE 69205494 D1 DE69205494 D1 DE 69205494D1
- Authority
- DE
- Germany
- Prior art keywords
- vapor deposition
- chemical vapor
- coating system
- plasma chemical
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3134259A JPH04362091A (ja) | 1991-06-05 | 1991-06-05 | プラズマ化学気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69205494D1 true DE69205494D1 (de) | 1995-11-23 |
DE69205494T2 DE69205494T2 (de) | 1996-04-25 |
Family
ID=15124118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69205494T Expired - Fee Related DE69205494T2 (de) | 1991-06-05 | 1992-05-21 | Beschichtungssystem zur plasmachemischen Gasphasenabscheidung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5261962A (de) |
EP (1) | EP0517042B1 (de) |
JP (1) | JPH04362091A (de) |
DE (1) | DE69205494T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5292400A (en) * | 1992-03-23 | 1994-03-08 | Hughes Aircraft Company | Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching |
US5824158A (en) * | 1993-06-30 | 1998-10-20 | Kabushiki Kaisha Kobe Seiko Sho | Chemical vapor deposition using inductively coupled plasma and system therefor |
KR100264445B1 (ko) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | 플라즈마처리장치 |
GB9321489D0 (en) * | 1993-10-19 | 1993-12-08 | Central Research Lab Ltd | Plasma processing |
US5571366A (en) * | 1993-10-20 | 1996-11-05 | Tokyo Electron Limited | Plasma processing apparatus |
WO1995015672A1 (en) * | 1993-12-01 | 1995-06-08 | Wisconsin Alumni Research Foundation | Method and apparatus for planar plasma processing |
US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
US5587038A (en) * | 1994-06-16 | 1996-12-24 | Princeton University | Apparatus and process for producing high density axially extending plasmas |
US5521351A (en) * | 1994-08-30 | 1996-05-28 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma surface treatment of the interior of hollow forms |
JP2770753B2 (ja) * | 1994-09-16 | 1998-07-02 | 日本電気株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US6465743B1 (en) * | 1994-12-05 | 2002-10-15 | Motorola, Inc. | Multi-strand substrate for ball-grid array assemblies and method |
US5589737A (en) * | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
KR100606622B1 (ko) * | 1994-12-06 | 2006-12-01 | 램 리써치 코포레이션 | 대형제품용플라스마처리기 |
US5643639A (en) * | 1994-12-22 | 1997-07-01 | Research Triangle Institute | Plasma treatment method for treatment of a large-area work surface apparatus and methods |
US5874704A (en) | 1995-06-30 | 1999-02-23 | Lam Research Corporation | Low inductance large area coil for an inductively coupled plasma source |
US5653811A (en) * | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
AU742803B2 (en) * | 1995-07-19 | 2002-01-10 | Chung Chan | A plasma source |
US5731565A (en) * | 1995-07-27 | 1998-03-24 | Lam Research Corporation | Segmented coil for generating plasma in plasma processing equipment |
GB2311164A (en) * | 1996-03-13 | 1997-09-17 | Atomic Energy Authority Uk | Large area plasma generator |
JP3437376B2 (ja) * | 1996-05-21 | 2003-08-18 | キヤノン株式会社 | プラズマ処理装置及び処理方法 |
US5800619A (en) * | 1996-06-10 | 1998-09-01 | Lam Research Corporation | Vacuum plasma processor having coil with minimum magnetic field in its center |
US5759280A (en) * | 1996-06-10 | 1998-06-02 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
JP3739137B2 (ja) * | 1996-06-18 | 2006-01-25 | 日本電気株式会社 | プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置 |
US6087778A (en) * | 1996-06-28 | 2000-07-11 | Lam Research Corporation | Scalable helicon wave plasma processing device with a non-cylindrical source chamber having a serpentine antenna |
US6626185B2 (en) * | 1996-06-28 | 2003-09-30 | Lam Research Corporation | Method of depositing a silicon containing layer on a semiconductor substrate |
US5776798A (en) * | 1996-09-04 | 1998-07-07 | Motorola, Inc. | Semiconductor package and method thereof |
US5970907A (en) * | 1997-01-27 | 1999-10-26 | Canon Kabushiki Kaisha | Plasma processing apparatus |
WO1998050600A1 (en) * | 1997-05-02 | 1998-11-12 | Frank Christian Doughty | Method and apparatus for sputter cleaning lead frames |
US6028395A (en) * | 1997-09-16 | 2000-02-22 | Lam Research Corporation | Vacuum plasma processor having coil with added conducting segments to its peripheral part |
EP1209721B1 (de) * | 1997-10-10 | 2007-12-05 | European Community | Induktiv-gekoppelte Plasmabehandlungskammer |
US6395128B2 (en) * | 1998-02-19 | 2002-05-28 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
US6112697A (en) | 1998-02-19 | 2000-09-05 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods |
US5944942A (en) * | 1998-03-04 | 1999-08-31 | Ogle; John Seldon | Varying multipole plasma source |
US6155199A (en) * | 1998-03-31 | 2000-12-05 | Lam Research Corporation | Parallel-antenna transformer-coupled plasma generation system |
JP3332857B2 (ja) * | 1998-04-15 | 2002-10-07 | 三菱重工業株式会社 | 高周波プラズマ発生装置及び給電方法 |
US6204607B1 (en) | 1998-05-28 | 2001-03-20 | Applied Komatsu Technology, Inc. | Plasma source with multiple magnetic flux sources each having a ferromagnetic core |
US6164241A (en) | 1998-06-30 | 2000-12-26 | Lam Research Corporation | Multiple coil antenna for inductively-coupled plasma generation systems |
US6222718B1 (en) * | 1998-11-12 | 2001-04-24 | Lam Research Corporation | Integrated power modules for plasma processing systems |
US6303908B1 (en) * | 1999-08-26 | 2001-10-16 | Nichiyo Engineering Corporation | Heat treatment apparatus |
US6562684B1 (en) | 2000-08-30 | 2003-05-13 | Micron Technology, Inc. | Methods of forming dielectric materials |
US20020170677A1 (en) * | 2001-04-07 | 2002-11-21 | Tucker Steven D. | RF power process apparatus and methods |
JP3897620B2 (ja) * | 2002-03-14 | 2007-03-28 | 三菱重工業株式会社 | 高周波電力供給構造およびそれを備えたプラズマcvd装置 |
JP3854909B2 (ja) * | 2002-08-06 | 2006-12-06 | 株式会社日立製作所 | プラズマ処理装置 |
KR100601558B1 (ko) * | 2004-04-26 | 2006-07-19 | 삼성에스디아이 주식회사 | 고주파 안테나 및 이를 이용한 유도결합 플라즈마화학기상증착 장치 |
US8454810B2 (en) | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
US7972471B2 (en) * | 2007-06-29 | 2011-07-05 | Lam Research Corporation | Inductively coupled dual zone processing chamber with single planar antenna |
KR101591404B1 (ko) * | 2008-05-22 | 2016-02-03 | 가부시키가이샤 이엠디 | 플라즈마 생성장치 및 플라즈마 처리장치 |
JP5227245B2 (ja) * | 2009-04-28 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6240441B2 (ja) * | 2013-09-06 | 2017-11-29 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US9721759B1 (en) | 2016-04-04 | 2017-08-01 | Aixtron Se | System and method for distributing RF power to a plasma source |
US11037765B2 (en) * | 2018-07-03 | 2021-06-15 | Tokyo Electron Limited | Resonant structure for electron cyclotron resonant (ECR) plasma ionization |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4058638A (en) * | 1974-12-19 | 1977-11-15 | Texas Instruments Incorporated | Method of optical thin film coating |
US4115184A (en) * | 1975-12-29 | 1978-09-19 | Northern Telecom Limited | Method of plasma etching |
US4017404A (en) * | 1976-03-11 | 1977-04-12 | The United States Of America As Represented By The Secretary Of The Department Of Health, Education And Welfare | Apparatus for low temperature ashing using radio frequency excited gas plasma |
JPS55131175A (en) * | 1979-03-30 | 1980-10-11 | Toshiba Corp | Surface treatment apparatus with microwave plasma |
US4526673A (en) * | 1982-09-24 | 1985-07-02 | Spire Corporation | Coating method |
JPS60104134A (ja) * | 1983-11-09 | 1985-06-08 | Matsushita Electric Ind Co Ltd | プラズマ重合コ−テイング装置 |
US4725449A (en) * | 1985-05-22 | 1988-02-16 | The United States Of America As Represented By The United States Department Of Energy | Method of making radio frequency ion source antenna |
US4729341A (en) * | 1985-09-18 | 1988-03-08 | Energy Conversion Devices, Inc. | Method and apparatus for making electrophotographic devices |
JPS62291922A (ja) * | 1986-06-12 | 1987-12-18 | Canon Inc | プラズマ処理装置 |
GB8629634D0 (en) * | 1986-12-11 | 1987-01-21 | Dobson C D | Reactive ion & sputter etching |
US5091049A (en) * | 1989-06-13 | 1992-02-25 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
US5055319A (en) * | 1990-04-02 | 1991-10-08 | The Regents Of The University Of California | Controlled high rate deposition of metal oxide films |
-
1991
- 1991-06-05 JP JP3134259A patent/JPH04362091A/ja not_active Withdrawn
-
1992
- 1992-05-21 DE DE69205494T patent/DE69205494T2/de not_active Expired - Fee Related
- 1992-05-21 EP EP92108622A patent/EP0517042B1/de not_active Expired - Lifetime
- 1992-06-03 US US07/893,010 patent/US5261962A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04362091A (ja) | 1992-12-15 |
EP0517042A1 (de) | 1992-12-09 |
US5261962A (en) | 1993-11-16 |
EP0517042B1 (de) | 1995-10-18 |
DE69205494T2 (de) | 1996-04-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |