CN114156196A - 一种离子束刻蚀机及其升降旋转台装置 - Google Patents

一种离子束刻蚀机及其升降旋转台装置 Download PDF

Info

Publication number
CN114156196A
CN114156196A CN202010926525.3A CN202010926525A CN114156196A CN 114156196 A CN114156196 A CN 114156196A CN 202010926525 A CN202010926525 A CN 202010926525A CN 114156196 A CN114156196 A CN 114156196A
Authority
CN
China
Prior art keywords
rotating shaft
driving unit
shell
lifting
upper shell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010926525.3A
Other languages
English (en)
Inventor
刘海洋
刘小波
胡冬冬
程实然
郭颂
张霄
许开东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Leuven Instruments Co Ltd
Original Assignee
Jiangsu Leuven Instruments Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Leuven Instruments Co Ltd filed Critical Jiangsu Leuven Instruments Co Ltd
Priority to CN202010926525.3A priority Critical patent/CN114156196A/zh
Priority to PCT/CN2021/100680 priority patent/WO2022048241A1/zh
Priority to JP2023514454A priority patent/JP7462370B2/ja
Priority to US18/043,492 priority patent/US20230326709A1/en
Priority to EP21863309.7A priority patent/EP4187580A4/en
Priority to KR1020237007699A priority patent/KR20230044310A/ko
Priority to TW110126600A priority patent/TWI795846B/zh
Publication of CN114156196A publication Critical patent/CN114156196A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20214—Rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20235—Z movement or adjustment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明公开了一种离子束刻蚀机及其升降旋转台装置，升降旋转台装置包括封闭壳体、转轴、旋转驱动单元和升降驱动单元；封闭壳体包括上部壳体、下部壳体和中部波纹管；中部波纹管的上端与上部壳体密封连接；中部波纹管的下端与下部壳体密封连接；转轴穿过上部壳体上端的轴孔布置；转轴与轴孔之间设置有动密封；转轴位于封闭壳体外部的上端设置有用于载片台；旋转驱动单元安装于上部壳体内；旋转驱动单元用于驱动转轴沿轴孔旋转；升降驱动单元安装于下部壳体内；升降驱动单元用于驱动转轴沿轴向升降；且转轴、上部壳体及旋转驱动单元同步升降。本发明可以调整晶圆距离栅网的距离，使晶圆各直径范围内的刻蚀量趋于一致，优化晶圆整体均一性。

Description

一种离子束刻蚀机及其升降旋转台装置
技术领域
本发明属于半导体刻蚀技术领域，尤其涉及一种离子束刻蚀机及其升降旋转台装置。
背景技术
离子束刻蚀机由栅网引出离子束，栅网由屏栅、加速栅和减速栅构成，栅网结构是一定的，同时载片台距离离子源栅网的距离是一定的。另外离子束刻蚀机的栅网的屏栅电压根据需要在50V至800V的范围内选取，不同屏栅电压下刻蚀出的晶圆刻蚀速率分布及均一性有很大差别。
随着栅网的屏栅电压增高，离子源引出的离子束能量升高，刻蚀速率会随之升高，同时从栅网引出的离子束发散角增大，如图3所示为高电压下刻蚀晶圆图，可以看出边缘的刻蚀速率会高于中心刻蚀速率，导致均一性变差，如图5所示。同样的，随着栅网的屏栅电压降低，离子源引出的离子束能量降低，刻蚀速率会随之降低，同时从栅网引出的离子束发散角减小，如图4所示为低电压下刻蚀晶圆图，可以看出边缘的刻蚀速率会低于中心刻蚀速率，也会导致均一性变差，如图6所示。
现有技术中载片台仅可围绕其中心轴旋转，保证晶圆在刻蚀过程中相同半径圆周向的良好均一性，但无法解决上述径向均一性差的问题。
发明内容
为解决上述问题，本发明提出一种离子束刻蚀机及其升降旋转台装置，可以根据不同工艺随意组合调整晶圆距离栅网的距离，使晶圆各直径范围内的刻蚀量趋于一致，晶圆整体均一性得到优化，尤其是各个工艺条件在无需更换腔体部件的前提下均能得到一致好的均一性，大大节约了零部件成本，提高了生产效率。
技术方案：本发明提出一种用于真空刻蚀腔体内的升降旋转台装置，包括封闭壳体、转轴、旋转驱动单元和升降驱动单元；
所述封闭壳体包括上部壳体、下部壳体和中部波纹管；所述上部壳体位于下部壳体的上方；所述中部波纹管的上端与上部壳体密封连接；所述中部波纹管的下端与下部壳体密封连接；所述上部壳体的上端设置有轴孔；
所述转轴穿过轴孔布置；所述转轴与轴孔之间设置有动密封；所述转轴位于封闭壳体外部的上端设置有用于放置晶圆的载片台；所述转轴与上部壳体之间还设置有第一轴向限位机构；
所述旋转驱动单元安装于上部壳体内；所述旋转驱动单元用于驱动转轴沿轴孔旋转；
所述升降驱动单元安装于下部壳体内；所述升降驱动单元用于驱动转轴沿轴向升降；且所述转轴与上部壳体通过第一轴向限位机构同步升降，且所述旋转驱动单元跟随上部壳体同步升降。
进一步，所述旋转驱动单元是中空环式电机；所述中空环式电机的转子与转轴固定连接；所述中空环式电机的定子与上部壳体固定连接；且所述中空环式电机作为转轴与上部壳体之间的第一轴向限位机构。
进一步，所述升降驱动单元包括旋转驱动电机、丝杆、螺母滑块；所述丝杆沿转轴升降方向布置；所述螺母滑块螺纹连接在丝杆外；所述旋转驱动电机安装在下部壳体，用于驱动丝杆转动；当丝杆转动，螺母滑块沿丝杆升降；所述螺母滑块与转轴之间设置有第二轴向限位机构；所述螺母滑块与转轴通过第二轴向限位机构同步升降。
进一步，所述转轴的下端沿轴心开设有导向圆孔；所述第二轴向限位机构包括滚动轴承；所述滚动轴承的外环与导向圆孔内壁固定连接；所述滚动轴承的内环与转轴固定连接。
进一步，所述升降驱动单元还包括第一导向滑杆；所述第一导向滑杆固定在下部壳体；所述第一导向滑杆沿转轴升降方向布置；所述螺母滑块滑动套装在第一导向滑杆外。
进一步，所述升降驱动单元是直线驱动器；所述直线驱动器的主轴沿转轴升降方向运动；则所述直线驱动器的主轴连接上部壳体或者主轴，驱动上部壳体、转轴及旋转驱动单元同步升降。
进一步，所述封闭壳体还包括若干第二导向滑杆；所述第二导向滑杆固定在下部壳体；所述第二导向滑杆沿转轴升降方向布置；所述上部壳体滑动套装在第二导向滑杆外。
进一步，所述动密封是磁流体密封结构。
一种离子束刻蚀机，包括真空刻蚀腔体、离子源和栅网；所述离子源产生的离子经栅网加速，进入真空刻蚀腔体轰击晶圆；还包括上述的升降旋转台装置。
进一步，所述离子源包括石英筒、射频线圈和中和器；所述石英筒的一端连通真空刻蚀腔体，另一端连通工艺气体进气；所述栅网位于石英筒的一端与真空刻蚀腔体之间；所述射频线圈位于石英筒外周；工艺气体从石英筒的另一端接入，射频线圈在石英筒内激励产生正电荷等离子体；正电荷等离子体经栅网加速；中和器释放电子，经栅网后的正电荷等离子体与电子中和成中性离子，中性离子轰击升降旋转台装置上的晶圆。
有益效果：本发明在使用时，通过旋转驱动单元驱动转轴围绕中心轴做圆周运动，从而使载片台做圆周运动。在载片台做圆周运动的同时，升降驱动单元驱动上部壳体、转轴及旋转驱动单元同步升降。上部壳体的升降过程中，克服了中部波纹管的弹力。通过中部波纹管连接上部壳体与下部壳体，形成的封闭壳体，将旋转驱动单元及升降驱动单元与真空刻蚀腔体隔离，保证了真空刻蚀腔体内的真空度。
本发明的升降旋转台装置可以根据不同工艺随意组合调整晶圆距离栅网的距离，晶圆各直径范围内的刻蚀量趋于一致，晶圆整体均一性得到优化，尤其是各个工艺条件在无需更换腔体部件的前提下均能得到一致好的均一性，大大节约了零部件成本，提高了生产效率。
附图说明
图1为本发明的用于真空刻蚀腔体内的升降旋转台装置的结构示意图；
图2为本发明的离子束刻蚀机的结构示意图；
图3为现有技术中高电压下刻蚀晶圆图；
图4为现有技术中低电压下刻蚀晶圆图；
图5为现有技术中高电压下晶圆刻蚀量分布坐标图；
图6为现有技术中低电压下晶圆刻蚀量分布坐标图；
图7为本发明的离子束刻蚀机刻蚀的晶圆刻蚀量分布坐标图。
具体实施方式
如图1，本发明提出一种用于真空刻蚀腔体内的升降旋转台装置，包括封闭壳体、转轴2、旋转驱动单元和升降驱动单元。
所述封闭壳体包括上部壳体101、下部壳体和中部波纹管103；所述上部壳体101位于下部壳体的上方；所述中部波纹管103的上端与上部壳体101密封连接；所述中部波纹管103的下端与下部壳体密封连接；所述上部壳体101的上端设置有轴孔101a，轴孔沿Z轴布置。
所述转轴2穿过轴孔101a布置；所述转轴2与轴孔101a之间设置有动密封；具体的，所述动密封是磁流体密封结构。磁流体密封结构中，当磁流体注入磁场的间隙时，磁流体可以充满整个间隙，形成一种“液体的O型密封圈”，保证腔室内部的高真空环境。
所述转轴2位于封闭壳体外部的上端设置有用于放置晶圆的载片台204；所述转轴2与上部壳体101之间还设置有第一轴向限位机构。
所述旋转驱动单元安装于上部壳体101内；所述旋转驱动单元用于驱动转轴2沿轴孔101a旋转；具体的，所述旋转驱动单元是中空环式电机；所述中空环式电机的转子301与转轴2固定连接；所述中空环式电机的定子302与上部壳体101固定连接；且所述中空环式电机作为转轴2与上部壳体101之间的第一轴向限位机构，实现了转轴2与上部壳体101之间的轴向限位。
所述旋转驱动单元也可以选用普通电机，通过齿轮等传动机构，驱动转轴2旋转。
转轴2的上设置有编码器205，可以精确的监控载片台204的旋转速度和位置，保证了晶圆片与片之间的位置精度。
所述升降驱动单元安装于下部壳体内；所述升降驱动单元用于驱动转轴2沿Z轴升降；且所述转轴2与上部壳体101通过第一轴向限位机构同步升降，且所述旋转驱动单元跟随上部壳体101同步升降。
上部壳体101的升降过程中，克服了中部波纹管103的弹力。通过中部波纹管103连接上部壳体101与下部壳体，形成的封闭壳体，将旋转驱动单元及升降驱动单元与真空刻蚀腔体6隔离，保证了真空刻蚀腔体6内的真空度。
所述封闭壳体还包括若干第二导向滑杆104；所述第二导向滑杆104固定在下部壳体；所述第二导向滑杆104沿转轴2升降方向布置；所述上部壳体101滑动套装在第二导向滑杆104外。第二导向滑杆104起到了上部壳体101的升降导向作用。
所述升降驱动单元包括以下两种实施方式：
实施方式一，所述升降驱动单元包括旋转驱动电机401、丝杆402、螺母滑块403；所述丝杆402沿转轴2升降方向布置；所述螺母滑块403螺纹连接在丝杆402外；所述旋转驱动电机401安装在下部壳体，通过联轴器405连接丝杆402，用于驱动丝杆402转动；当丝杆402转动，螺母滑块403沿丝杆402升降；所述螺母滑块403与转轴2之间设置有第二轴向限位机构；所述螺母滑块403与转轴2通过第二轴向限位机构同步升降。所述下部壳体上设置有轴承406，用于支撑丝杆402。
所述转轴2的下端沿轴心开设有导向圆孔202；所述第二轴向限位机构包括滚动轴承203；所述滚动轴承203的外环与导向圆孔202内壁固定连接；所述滚动轴承203的内环与转轴2固定连接。所述滚动轴承203起到了螺母滑块403与转轴2之间的轴向限位作用，使得螺母滑块403与转轴2同步升降；且使得转轴2在旋转运动过程中不增加额外的扭力。
所述升降驱动单元还包括第一导向滑杆404；所述第一导向滑杆404固定在下部壳体；所述第一导向滑杆404沿转轴2升降方向布置；所述螺母滑块403滑动套装在第一导向滑杆404外。所述第一导向滑杆404可防止螺母滑块403发生旋转，使螺母滑块403沿丝杆402升降。
所述下部壳体具体包括固定座102a和下腔盖102b。所述固定座102a的上端面用于安装第一导向滑杆404、第二导向滑杆104、中部波纹管103和轴承406；所述固定座102a的下端面用于安装旋转驱动电机401。所述下腔盖102b与固定座102a密封连接，用于封闭旋转驱动电机401。
实施方式二，所述升降驱动单元是直线驱动器；所述直线驱动器的主轴沿转轴2升降方向运动；则所述直线驱动器的主轴连接上部壳体101或者主轴，驱动上部壳体101、转轴2及旋转驱动单元同步升降。优选的，所述直线驱动器安装在下部壳体上，主轴连接上部壳体101，驱动上部壳体101、转轴2及旋转驱动单元同步升降。
一种离子束刻蚀机，如图2，包括真空刻蚀腔体6、离子源和栅网7；还包括上述的升降旋转台装置5。
所述离子源包括石英筒801、射频线圈802和中和器803；所述石英筒801的一端连通真空刻蚀腔体6，另一端连通工艺气体进气；所述栅网7位于石英筒801的一端与真空刻蚀腔体6之间；所述射频线圈802位于石英筒801外周；工艺气体从石英筒801的另一端接入，射频线圈802在石英筒801内激励产生正电荷等离子体；正电荷等离子体经栅网7加速；中和器803释放电子，经栅网7后的正电荷等离子体与电子中和成中性离子，中性离子轰击升降旋转台装置5上的晶圆。
本发明在使用时，通过旋转驱动单元驱动转轴2围绕中心轴Z做圆周运动，从而使载片台204做圆周运动。在载片台204做圆周运动的同时，升降驱动单元驱动上部壳体101、转轴2及旋转驱动单元同步升降。上部壳体101的升降过程中，克服了中部波纹管103的弹力。通过中部波纹管103连接上部壳体101与下部壳体，形成的封闭壳体，将旋转驱动单元及升降驱动单元与真空刻蚀腔体6隔离，保证了真空刻蚀腔体6内的真空度。
本发明的升降旋转台装置可以根据不同工艺随意组合调整晶圆距离栅网的距离，如图7所示优化晶圆距栅网距离后刻蚀量分布图，可以看出晶圆各直径范围内的刻蚀量趋于一致，晶圆整体均一性得到优化，尤其是各个工艺条件在无需更换腔体部件的前提下均能得到一致好的均一性，大大节约了零部件成本，提高了生产效率。

Claims (10)

1.一种用于真空刻蚀腔体内的升降旋转台装置，其特征在于：包括封闭壳体、转轴（2）、旋转驱动单元和升降驱动单元；
所述封闭壳体包括上部壳体（101）、下部壳体和中部波纹管（103）；所述上部壳体（101）位于下部壳体的上方；所述中部波纹管（103）的上端与上部壳体（101）密封连接；所述中部波纹管（103）的下端与下部壳体密封连接；所述上部壳体（101）的上端设置有轴孔（101a）；
所述转轴（2）穿过轴孔（101a）布置；所述转轴（2）与轴孔（101a）之间设置有动密封；所述转轴（2）位于封闭壳体外部的上端设置有用于放置晶圆的载片台（204）；所述转轴（2）与上部壳体（101）之间还设置有第一轴向限位机构；
所述旋转驱动单元安装于上部壳体（101）内；所述旋转驱动单元用于驱动转轴（2）沿轴孔（101a）旋转；
所述升降驱动单元安装于下部壳体内；所述升降驱动单元用于驱动转轴（2）沿轴向升降；且所述转轴（2）与上部壳体（101）通过第一轴向限位机构同步升降，且所述旋转驱动单元跟随上部壳体（101）同步升降。
2.根据权利要求1所述的用于真空刻蚀腔体内的升降旋转台装置，其特征在于：所述旋转驱动单元是中空环式电机；所述中空环式电机的转子（301）与转轴（2）固定连接；所述中空环式电机的定子（302）与上部壳体（101）固定连接；且所述中空环式电机作为转轴（2）与上部壳体（101）之间的第一轴向限位机构。
3.根据权利要求1或2所述的用于真空刻蚀腔体内的升降旋转台装置，其特征在于：所述升降驱动单元包括旋转驱动电机（401）、丝杆（402）、螺母滑块（403）；所述丝杆（402）沿转轴（2）升降方向布置；所述螺母滑块（403）螺纹连接在丝杆（402）外；所述旋转驱动电机（401）安装在下部壳体，用于驱动丝杆（402）转动；当丝杆（402）转动，螺母滑块（403）沿丝杆（402）升降；所述螺母滑块（403）与转轴（2）之间设置有第二轴向限位机构；所述螺母滑块（403）与转轴（2）通过第二轴向限位机构同步升降。
4.根据权利要求3所述的用于真空刻蚀腔体内的升降旋转台装置，其特征在于：所述转轴（2）的下端沿轴心开设有导向圆孔（202）；所述第二轴向限位机构包括滚动轴承（203）；所述滚动轴承（203）的外环与导向圆孔（202）内壁固定连接；所述滚动轴承（203）的内环与转轴（2）固定连接。
5.根据权利要求4所述的用于真空刻蚀腔体内的升降旋转台装置，其特征在于：所述升降驱动单元还包括第一导向滑杆（404）；所述第一导向滑杆（404）固定在下部壳体；所述第一导向滑杆（404）沿转轴（2）升降方向布置；所述螺母滑块（403）滑动套装在第一导向滑杆（404）外。
6.根据权利要求1或2所述的用于真空刻蚀腔体内的升降旋转台装置，其特征在于：所述升降驱动单元是直线驱动器；所述直线驱动器的主轴沿转轴（2）升降方向运动；则所述直线驱动器的主轴连接上部壳体（101）或者主轴，驱动上部壳体（101）、转轴（2）及旋转驱动单元同步升降。
7.根据权利要求1所述的用于真空刻蚀腔体内的升降旋转台装置，其特征在于：所述封闭壳体还包括若干第二导向滑杆（104）；所述第二导向滑杆（104）固定在下部壳体；所述第二导向滑杆（104）沿转轴（2）升降方向布置；所述上部壳体（101）滑动套装在第二导向滑杆（104）外。
8.根据权利要求1所述的用于真空刻蚀腔体内的升降旋转台装置，其特征在于：所述动密封是磁流体密封结构。
9.一种离子束刻蚀机，包括真空刻蚀腔体（6）、离子源和栅网（7）；所述离子源产生的离子经栅网（7）加速，进入真空刻蚀腔体（6）轰击晶圆；其特征在于：还包括如权利要求1-8任意一项所述的升降旋转台装置（5）。
10.根据权利要求9所述的离子束刻蚀机，其特征在于：所述离子源包括石英筒（801）、射频线圈（802）和中和器（803）；所述石英筒（801）的一端连通真空刻蚀腔体（6），另一端连通工艺气体进气；所述栅网（7）位于石英筒（801）的一端与真空刻蚀腔体（6）之间；所述射频线圈（802）位于石英筒（801）外周；工艺气体从石英筒（801）的另一端接入，射频线圈（802）在石英筒（801）内激励产生正电荷等离子体；正电荷等离子体经栅网（7）加速；中和器（803）释放电子，经栅网（7）后的正电荷等离子体与电子中和成中性离子，中性离子轰击升降旋转台装置（5）上的晶圆。
CN202010926525.3A 2020-09-07 2020-09-07 一种离子束刻蚀机及其升降旋转台装置 Pending CN114156196A (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN202010926525.3A CN114156196A (zh) 2020-09-07 2020-09-07 一种离子束刻蚀机及其升降旋转台装置
PCT/CN2021/100680 WO2022048241A1 (zh) 2020-09-07 2021-06-17 一种离子束刻蚀机及其升降旋转台装置
JP2023514454A JP7462370B2 (ja) 2020-09-07 2021-06-17 イオンビームエッチング機及びその昇降回転テーブル装置
US18/043,492 US20230326709A1 (en) 2020-09-07 2021-06-17 Ion beam etching machine and lifting and rotating platform device thereof
EP21863309.7A EP4187580A4 (en) 2020-09-07 2021-06-17 ION BEAM ETCHING MACHINE AND ELEVATING AND TURNING PLATFORM APPARATUS THEREOF
KR1020237007699A KR20230044310A (ko) 2020-09-07 2021-06-17 이온 빔 에칭 기계 및 이의 승강 및 회전 플랫폼 디바이스
TW110126600A TWI795846B (zh) 2020-09-07 2021-07-20 離子束蝕刻機及其升降旋轉台裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010926525.3A CN114156196A (zh) 2020-09-07 2020-09-07 一种离子束刻蚀机及其升降旋转台装置

Publications (1)

Publication Number Publication Date
CN114156196A true CN114156196A (zh) 2022-03-08

Family

ID=80460220

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010926525.3A Pending CN114156196A (zh) 2020-09-07 2020-09-07 一种离子束刻蚀机及其升降旋转台装置

Country Status (7)

Country Link
US (1) US20230326709A1 (zh)
EP (1) EP4187580A4 (zh)
JP (1) JP7462370B2 (zh)
KR (1) KR20230044310A (zh)
CN (1) CN114156196A (zh)
TW (1) TWI795846B (zh)
WO (1) WO2022048241A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114695245A (zh) * 2022-03-29 2022-07-01 苏州矽行半导体技术有限公司 一种升降轴及晶圆载台
WO2023202119A1 (zh) * 2022-04-20 2023-10-26 江苏鲁汶仪器股份有限公司 一种晶圆载台装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115354276B (zh) * 2022-07-18 2024-04-26 中国电子科技集团公司第四十八研究所 一种用于刻蚀及溅射的工件台

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW331652B (en) * 1995-06-16 1998-05-11 Ebara Corp Thin film vapor deposition apparatus
KR20060103640A (ko) * 2005-03-28 2006-10-04 삼성전자주식회사 반도체 제조장치
US20060281310A1 (en) * 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
JP6928943B2 (ja) * 2017-03-28 2021-09-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
US11149345B2 (en) 2017-12-11 2021-10-19 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck
JP7134039B2 (ja) * 2018-09-14 2022-09-09 東京エレクトロン株式会社 基板載置機構、成膜装置、および成膜方法
CN209367723U (zh) * 2018-11-26 2019-09-10 江苏鲁汶仪器有限公司 一种压环无摩擦升降装置
CN109950121B (zh) * 2019-04-15 2021-07-27 江苏鲁汶仪器有限公司 一种通电离子源挡板
CN110566787A (zh) * 2019-09-27 2019-12-13 哈工大机器人（合肥）国际创新研究院 一种机械式升降立柱

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114695245A (zh) * 2022-03-29 2022-07-01 苏州矽行半导体技术有限公司 一种升降轴及晶圆载台
CN114695245B (zh) * 2022-03-29 2023-02-07 苏州矽行半导体技术有限公司 一种升降轴及晶圆载台
WO2023202119A1 (zh) * 2022-04-20 2023-10-26 江苏鲁汶仪器股份有限公司 一种晶圆载台装置

Also Published As

Publication number Publication date
JP7462370B2 (ja) 2024-04-05
EP4187580A1 (en) 2023-05-31
US20230326709A1 (en) 2023-10-12
KR20230044310A (ko) 2023-04-03
TW202211292A (zh) 2022-03-16
JP2023539381A (ja) 2023-09-13
EP4187580A4 (en) 2024-02-28
WO2022048241A1 (zh) 2022-03-10
TWI795846B (zh) 2023-03-11

Similar Documents

Publication Publication Date Title
CN114156196A (zh) 一种离子束刻蚀机及其升降旋转台装置
KR100297358B1 (ko) 플라즈마에칭장치
JP4848845B2 (ja) 真空ロボット、処理装置、モータの製造方法、およびモータ
JP2003115527A (ja) 基板移動装置
KR101453233B1 (ko) 기판 처리 장치
CN1890399A (zh) 磁电管及溅镀靶间的间距补偿
CN110205592B (zh) 磁控管驱动机构、磁控源和磁控溅射设备
JP2015508456A (ja) 真空中回転装置
CN1466770A (zh) 批量离子注入系统中的晶片背面气体冷却装置
CN214193438U (zh) 一种磁控溅射镀膜装置及系统
CN107610994B (zh) 一种离子束刻蚀系统
CN101638774B (zh) 一种磁控溅射装置的可旋转样品位
CN102074446B (zh) 一种复合轨迹可调式磁电管
CN102064076B (zh) 一种变偏心距式磁电管
CN104988582B (zh) 可改善设备工作效率的传感器单晶硅刻蚀装置
US7365346B2 (en) Ion-implanting apparatus, ion-implanting method, and device manufactured thereby
CN102534522A (zh) 一种磁控溅射源及磁控溅射设备
JP6265534B2 (ja) スパッタリングカソード
KR101606129B1 (ko) 디스플레이 장치용 마더 글라스 이송 스테이지 장치
CN210215522U (zh) 磁性材料表面蒸发镀铽或镝的设备
CN219303638U (zh) 晶圆载台挡板结构
CN103426807B (zh) 一种配置取放装置和调节工件的位置的半导体刻蚀装置
CN213743882U (zh) 一种真空抽气装置
CN109256311B (zh) 一种离子注入方法
CN115011934B (zh) 一种用于电弧激发的磁性密封旋转装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination