TWI795846B - 離子束蝕刻機及其升降旋轉台裝置 - Google Patents

離子束蝕刻機及其升降旋轉台裝置 Download PDF

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TWI795846B
TWI795846B TW110126600A TW110126600A TWI795846B TW I795846 B TWI795846 B TW I795846B TW 110126600 A TW110126600 A TW 110126600A TW 110126600 A TW110126600 A TW 110126600A TW I795846 B TWI795846 B TW I795846B
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rotating shaft
lifting
drive unit
casing
table device
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劉海洋
劉小波
胡冬冬
程實然
郭頌
張霄
開東 許
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大陸商江蘇魯汶儀器有限公司
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Abstract

一種離子束蝕刻機及其升降旋轉台裝置，升降旋轉台裝置包括封閉殼體、轉軸、旋轉驅動單元和升降驅動單元；封閉殼體包括上部殼體、下部殼體和中部波紋管；中部波紋管的上端與上部殼體密封連接；中部波紋管的下端與下部殼體密封連接；轉軸穿過上部殼體上端的軸孔佈置；轉軸與軸孔之間設置有動密封；轉軸位於封閉殼體外部的上端設置有用於載片台；旋轉驅動單元安裝於上部殼體內；旋轉驅動單元用於驅動轉軸沿軸孔旋轉；升降驅動單元安裝於下部殼體內；升降驅動單元用於驅動轉軸沿軸向升降；且轉軸、上部殼體及旋轉驅動單元同步升降。

Description

離子束蝕刻機及其升降旋轉台裝置
本發明是有關於一種半導體蝕刻技術領域，且特別是有關於一種離子束蝕刻機及其升降旋轉台裝置。
離子束蝕刻機由柵網引出離子束，柵網由屏柵、加速柵和減速柵構成，柵網結構是一定的，同時載片台距離離子源柵網的距離是一定的。另外離子束蝕刻機的柵網的屏柵電壓根據需要在50V至800V的範圍內選取，不同屏柵電壓下蝕刻出的晶圓蝕刻速率分佈及均一性有很大差別。
隨著柵網的屏柵電壓增高，離子源引出的離子束能量升高，蝕刻速率會隨之升高，同時從柵網引出的離子束髮散角增大，如圖3所示為高電壓下蝕刻晶圓圖，可以看出邊緣的蝕刻速率會高於中心蝕刻速率，導致均一性變差，如圖5所示。同樣的，隨著柵網的屏柵電壓降低，離子源引出的離子束能量降低，蝕刻速率會隨之降低，同時從柵網引出的離子束髮散角減小，如圖4所示為低電壓下蝕刻晶圓圖，可以看出邊緣的蝕刻速率會低於中心蝕刻速率，也會導致均一性變差，如圖6所示。
現有技術中載片台僅可圍繞其中心軸旋轉，保證晶圓在蝕刻過程中相同半徑圓周向的良好均一性，但無法解決上述徑向均一性差的問題。
為解決上述問題，本發明提出一種離子束蝕刻機及其升降旋轉台裝置，可以根據不同工藝隨意組合調整晶圓距離柵網的距離，使晶圓各直徑範圍內的蝕刻量趨於一致，晶圓整體均一性得到優化，尤其是各個工藝條件在無需更換腔體部件的前提下均能得到一致好的均一性，大大節約了零部件成本，提高了生產效率。
技術方案：本發明提出一種用於真空蝕刻腔體內的升降旋轉台裝置，包括封閉殼體、轉軸、旋轉驅動單元和升降驅動單元； 所述封閉殼體包括上部殼體、下部殼體和中部波紋管；所述上部殼體位於下部殼體的上方；所述中部波紋管的上端與上部殼體密封連接；所述中部波紋管的下端與下部殼體密封連接；所述上部殼體的上端設置有軸孔； 所述轉軸穿過軸孔佈置；所述轉軸與軸孔之間設置有動密封；所述轉軸位於封閉殼體外部的上端設置有用於放置晶圓的載片台；所述轉軸與上部殼體之間還設置有第一軸向限位機構； 所述旋轉驅動單元安裝於上部殼體內；所述旋轉驅動單元用於驅動轉軸沿軸孔旋轉； 所述升降驅動單元安裝於下部殼體內；所述升降驅動單元用於驅動轉軸沿軸向升降；且所述轉軸與上部殼體通過第一軸向限位機構同步升降，且所述旋轉驅動單元跟隨上部殼體同步升降。
進一步，所述旋轉驅動單元是中空環式電機；所述中空環式電機的轉子與轉軸固定連接；所述中空環式電機的定子與上部殼體固定連接；且所述中空環式電機作為轉軸與上部殼體之間的第一軸向限位機構。
進一步，所述升降驅動單元包括旋轉驅動電機、絲杆、螺母滑塊；所述絲杆沿轉軸升降方向佈置；所述螺母滑塊螺紋連接在絲杆外；所述旋轉驅動電機安裝在下部殼體，用於驅動絲杆轉動；當絲杆轉動，螺母滑塊沿絲杆升降；所述螺母滑塊與轉軸之間設置有第二軸向限位機構；所述螺母滑塊與轉軸通過第二軸向限位機構同步升降。
進一步，所述轉軸的下端沿軸心開設有導向圓孔；所述第二軸向限位機構包括滾動軸承；所述滾動軸承的外環與導向圓孔內壁固定連接；所述滾動軸承的內環與轉軸固定連接。
進一步，所述升降驅動單元還包括第一導向滑杆；所述第一導向滑杆固定在下部殼體；所述第一導向滑杆沿轉軸升降方向佈置；所述螺母滑塊滑動套裝在第一導向滑杆外。
進一步，所述升降驅動單元是直線驅動器；所述直線驅動器的主軸沿轉軸升降方向運動；則所述直線驅動器的主軸連接上部殼體或者主軸，驅動上部殼體、轉軸及旋轉驅動單元同步升降。
進一步，所述封閉殼體還包括若干第二導向滑杆；所述第二導向滑杆固定在下部殼體；所述第二導向滑杆沿轉軸升降方向佈置；所述上部殼體滑動套裝在第二導向滑杆外。
進一步，所述動密封是磁流體密封結構。
一種離子束蝕刻機，包括真空蝕刻腔體、離子源和柵網；所述離子源產生的離子經柵網加速，進入真空蝕刻腔體轟擊晶圓；還包括上述的升降旋轉台裝置。
進一步，所述離子源包括石英筒、射頻線圈和中和器；所述石英筒的一端連通真空蝕刻腔體，另一端連通工藝氣體進氣；所述柵網位於石英筒的一端與真空蝕刻腔體之間；所述射頻線圈位於石英筒外周；工藝氣體從石英筒的另一端接入，射頻線圈在石英筒內激勵產生正電荷等離子體；正電荷等離子體經柵網加速；中和器釋放電子，經柵網後的正電荷等離子體與電子中和成中性離子，中性離子轟擊升降旋轉台裝置上的晶圓。
有益效果：本發明在使用時，通過旋轉驅動單元驅動轉軸圍繞中心軸做圓周運動，從而使載片台做圓周運動。在載片台做圓周運動的同時，升降驅動單元驅動上部殼體、轉軸及旋轉驅動單元同步升降。上部殼體的升降過程中，克服了中部波紋管的彈力。通過中部波紋管連接上部殼體與下部殼體，形成的封閉殼體，將旋轉驅動單元及升降驅動單元與真空蝕刻腔體隔離，保證了真空蝕刻腔體內的真空度。
本發明的升降旋轉台裝置可以根據不同工藝隨意組合調整晶圓距離柵網的距離，晶圓各直徑範圍內的蝕刻量趨於一致，晶圓整體均一性得到優化，尤其是各個工藝條件在無需更換腔體部件的前提下均能得到一致好的均一性，大大節約了零部件成本，提高了生產效率。
如圖1，本發明提出一種用於真空蝕刻腔體內的升降旋轉台裝置，包括封閉殼體、轉軸2、旋轉驅動單元和升降驅動單元。
所述封閉殼體包括上部殼體101、下部殼體和中部波紋管103；所述上部殼體101位於下部殼體的上方；所述中部波紋管103的上端與上部殼體101密封連接；所述中部波紋管103的下端與下部殼體密封連接；所述上部殼體101的上端設置有軸孔101a，軸孔沿Z軸佈置。
所述轉軸2穿過軸孔101a佈置；所述轉軸2與軸孔101a之間設置有動密封；具體的，所述動密封是磁流體密封結構。磁流體密封結構中，當磁流體注入磁場的間隙時，磁流體可以充滿整個間隙，形成一種“液體的O型密封圈”，保證腔室內部的高真空環境。
所述轉軸2位於封閉殼體外部的上端設置有用於放置晶圓的載片台204；所述轉軸2與上部殼體101之間還設置有第一軸向限位機構。
所述旋轉驅動單元安裝於上部殼體101內；所述旋轉驅動單元用於驅動轉軸2沿軸孔101a旋轉；具體的，所述旋轉驅動單元是中空環式電機；所述中空環式電機的轉子301與轉軸2固定連接；所述中空環式電機的定子302與上部殼體101固定連接；且所述中空環式電機作為轉軸2與上部殼體101之間的第一軸向限位機構，實現了轉軸2與上部殼體101之間的軸向限位。
所述旋轉驅動單元也可以選用普通電機，通過齒輪等傳動機構，驅動轉軸2旋轉。
轉軸2的上設置有編碼器205，可以精確的監控載片台204的旋轉速度和位置，保證了晶圓片與片之間的位置精度。
所述升降驅動單元安裝於下部殼體內；所述升降驅動單元用於驅動轉軸2沿Z軸升降；且所述轉軸2與上部殼體101通過第一軸向限位機構同步升降，且所述旋轉驅動單元跟隨上部殼體101同步升降。
上部殼體101的升降過程中，克服了中部波紋管103的彈力。通過中部波紋管103連接上部殼體101與下部殼體，形成的封閉殼體，將旋轉驅動單元及升降驅動單元與真空蝕刻腔體6隔離，保證了真空蝕刻腔體6內的真空度。
所述封閉殼體還包括若干第二導向滑杆104；所述第二導向滑杆104固定在下部殼體；所述第二導向滑杆104沿轉軸2升降方向佈置；所述上部殼體101滑動套裝在第二導向滑杆104外。第二導向滑杆104起到了上部殼體101的升降導向作用。
所述升降驅動單元包括以下兩種實施方式： 實施方式一，所述升降驅動單元包括旋轉驅動電機401、絲杆402、螺母滑塊403；所述絲杆402沿轉軸2升降方向佈置；所述螺母滑塊403螺紋連接在絲杆402外；所述旋轉驅動電機401安裝在下部殼體，通過聯軸器405連接絲杆402，用於驅動絲杆402轉動；當絲杆402轉動，螺母滑塊403沿絲杆402升降；所述螺母滑塊403與轉軸2之間設置有第二軸向限位機構；所述螺母滑塊403與轉軸2通過第二軸向限位機構同步升降。所述下部殼體上設置有軸承406，用於支撐絲杆402。
所述轉軸2的下端沿軸心開設有導向圓孔202；所述第二軸向限位機構包括滾動軸承203；所述滾動軸承203的外環與導向圓孔202內壁固定連接；所述滾動軸承203的內環與轉軸2固定連接。所述滾動軸承203起到了螺母滑塊403與轉軸2之間的軸向限位作用，使得螺母滑塊403與轉軸2同步升降；且使得轉軸2在旋轉運動過程中不增加額外的扭力。
所述升降驅動單元還包括第一導向滑杆404；所述第一導向滑杆404固定在下部殼體；所述第一導向滑杆404沿轉軸2升降方向佈置；所述螺母滑塊403滑動套裝在第一導向滑杆404外。所述第一導向滑杆404可防止螺母滑塊403發生旋轉，使螺母滑塊403沿絲杆402升降。
所述下部殼體具體包括固定座102a和下腔蓋102b。所述固定座102a的上端面用於安裝第一導向滑杆404、第二導向滑杆104、中部波紋管103和軸承406；所述固定座102a的下端面用於安裝旋轉驅動電機401。所述下腔蓋102b與固定座102a密封連接，用於封閉旋轉驅動電機401。
實施方式二，所述升降驅動單元是直線驅動器；所述直線驅動器的主軸沿轉軸2升降方向運動；則所述直線驅動器的主軸連接上部殼體101或者主軸，驅動上部殼體101、轉軸2及旋轉驅動單元同步升降。優選的，所述直線驅動器安裝在下部殼體上，主軸連接上部殼體101，驅動上部殼體101、轉軸2及旋轉驅動單元同步升降。
一種離子束蝕刻機，如圖2，包括真空蝕刻腔體6、離子源和柵網7；還包括上述的升降旋轉台裝置5。
所述離子源包括石英筒801、射頻線圈802和中和器803；所述石英筒801的一端連通真空蝕刻腔體6，另一端連通工藝氣體進氣；所述柵網7位於石英筒801的一端與真空蝕刻腔體6之間；所述射頻線圈802位於石英筒801外周；工藝氣體從石英筒801的另一端接入，射頻線圈802在石英筒801內激勵產生正電荷等離子體；正電荷等離子體經柵網7加速；中和器803釋放電子，經柵網7後的正電荷等離子體與電子中和成中性離子，中性離子轟擊升降旋轉台裝置5上的晶圓。
本發明在使用時，通過旋轉驅動單元驅動轉軸2圍繞中心軸Z做圓周運動，從而使載片台204做圓周運動。在載片台204做圓周運動的同時，升降驅動單元驅動上部殼體101、轉軸2及旋轉驅動單元同步升降。上部殼體101的升降過程中，克服了中部波紋管103的彈力。通過中部波紋管103連接上部殼體101與下部殼體，形成的封閉殼體，將旋轉驅動單元及升降驅動單元與真空蝕刻腔體6隔離，保證了真空蝕刻腔體6內的真空度。
本發明的升降旋轉台裝置可以根據不同工藝隨意組合調整晶圓距離柵網的距離，如圖7所示優化晶圓距柵網距離後蝕刻量分佈圖，可以看出晶圓各直徑範圍內的蝕刻量趨於一致，晶圓整體均一性得到優化，尤其是各個工藝條件在無需更換腔體部件的前提下均能得到一致好的均一性，大大節約了零部件成本，提高了生產效率。
101:上部殼體 101a:軸孔 102a:固定座 102b:下腔蓋 103:中部波紋管 104:第二導向滑杆 2:轉軸 202:導向圓孔 203:滾動軸承 204:載片台 205:編碼器 301:轉子 302:定子 401:旋轉驅動電機 402:絲杆 403:螺母滑塊 404:第一導向滑杆 405:聯軸器 406:軸承 5:升降旋轉台裝置 6:真空蝕刻腔體 7:柵網 801:石英筒 802:射頻線圈 803:中和器 Z:軸
圖1為本發明的用於真空蝕刻腔體內的升降旋轉台裝置的結構示意圖。 圖2為本發明的離子束蝕刻機的結構示意圖。 圖3為現有技術中高電壓下蝕刻晶圓圖。 圖4為現有技術中低電壓下蝕刻晶圓圖。 圖5為現有技術中高電壓下晶圓蝕刻量分佈坐標圖。 圖6為現有技術中低電壓下晶圓蝕刻量分佈坐標圖。 圖7為本發明的離子束蝕刻機蝕刻的晶圓蝕刻量分佈坐標圖。
101:上部殼體
101a:軸孔
102a:固定座
102b:下腔蓋
103:中部波紋管
104:第二導向滑杆
2:轉軸
202:導向圓孔
203:滾動軸承
204:載片台
205:編碼器
301:轉子
302:定子
401:旋轉驅動電機
402:絲杆
403:螺母滑塊
404:第一導向滑杆
405:聯軸器
406:軸承
Z:軸

Claims (8)

  1. 一種用於真空蝕刻腔體內的升降旋轉台裝置，包括封閉殼體、轉軸(2)、旋轉驅動單元和升降驅動單元；所述封閉殼體包括上部殼體(101)、下部殼體和中部波紋管(103)；所述上部殼體(101)位於所述下部殼體的上方；所述中部波紋管(103)的上端與所述上部殼體(101)密封連接；所述中部波紋管(103)的下端與所述下部殼體密封連接；所述上部殼體(101)的上端設置有軸孔(101a)；所述轉軸(2)穿過所述軸孔(101a)佈置；所述轉軸(2)與所述軸孔(101a)之間設置有動密封；所述轉軸(2)位於所述封閉殼體外部的上端設置有用於放置晶圓的載片台(204)；所述轉軸(2)與所述上部殼體(101)之間還設置有第一軸向限位機構；所述旋轉驅動單元安裝於所述上部殼體(101)內；所述旋轉驅動單元用於驅動所述轉軸(2)沿所述軸孔(101a)旋轉；所述升降驅動單元安裝於所述下部殼體內；所述升降驅動單元用於驅動所述轉軸(2)沿軸向升降；且所述轉軸(2)與所述上部殼體(101)通過所述第一軸向限位機構同步升降，且所述所述旋轉驅動單元跟隨所述上部殼體(101)同步升降，其中所述升降驅動單元包括旋轉驅動電機(401)、絲杆(402)、螺母滑塊(403)；所述絲杆(402)沿所述轉軸(2)升降方向佈置；所述螺母滑塊(403)螺紋連接在所述絲杆(402)外；所述旋轉驅動 電機(401)安裝在所述下部殼體，用於驅動所述絲杆(402)轉動；當所述絲杆(402)轉動，所述螺母滑塊(403)沿所述絲杆(402)升降；所述螺母滑塊(403)與所述轉軸(2)之間設置有第二軸向限位機構；所述螺母滑塊(403)與所述轉軸(2)通過所述第二軸向限位機構同步升降。
  2. 如請求項1所述的真空蝕刻腔體內的升降旋轉台裝置，其中所述旋轉驅動單元是中空環式電機；所述中空環式電機的轉子(301)與轉軸(2)固定連接；所述中空環式電機的定子(302)與所述上部殼體(101)固定連接；且所述中空環式電機作為所述轉軸(2)與所述上部殼體(101)之間的所述第一軸向限位機構。
  3. 如請求項2所述的真空蝕刻腔體內的升降旋轉台裝置，其中所述轉軸(2)的下端沿軸心開設有導向圓孔(202)；所述第二軸向限位機構包括滾動軸承(203)；所述滾動軸承(203)的外環與所述導向圓孔(202)內壁固定連接；所述滾動軸承(203)的內環與所述轉軸(2)固定連接。
  4. 如請求項3所述的真空蝕刻腔體內的升降旋轉台裝置，其中所述升降驅動單元還包括第一導向滑杆(404)；所述第一導向滑杆(404)固定在所述下部殼體；所述第一導向滑杆(404)沿所述轉軸(2)升降方向佈置；所述螺母滑塊(403)滑動套裝在所述第一導向滑杆(404)外。
  5. 如請求項1所述的真空蝕刻腔體內的升降旋轉台裝置，其中所述封閉殼體還包括若干第二導向滑杆(104)；所述第二導向滑杆(104)固定在所述下部殼體；所述第二導向滑杆(104)沿所述轉軸(2)升降方向佈置；所述上部殼體(101)滑動套裝在所述第二導向滑杆(104)外。
  6. 如請求項1所述的真空蝕刻腔體內的升降旋轉台裝置，其中所述動密封是磁流體密封結構。
  7. 一種離子束蝕刻機，包括真空蝕刻腔體(6)、離子源和柵網(7)；所述離子源產生的離子經柵網(7)加速，進入真空蝕刻腔體(6)轟擊晶圓；所述離子束蝕刻機還包括如請求項1至請求項6任意一項所述的升降旋轉台裝置(5)。
  8. 如請求項7所述的離子束蝕刻機，其中所述離子源包括石英筒(801)、射頻線圈(802)和中和器(803)；所述石英筒(801)的一端連通所述真空蝕刻腔體(6)，另一端連通工藝氣體進氣；所述柵網(7)位於所述石英筒(801)的一端與所述真空蝕刻腔體(6)之間；所述射頻線圈(802)位於所述石英筒(801)外周；工藝氣體從所述石英筒(801)的另一端接入，所述射頻線圈(802)在所述石英筒(801)內激勵產生正電荷等離子體；正電荷等離子體經所述柵網(7)加速；所述中和器(803)釋放電子，經所述柵網(7)後的正電荷等離子體與電子中和成中性離子，中性離子轟擊升降旋轉台裝置(5)上的所述晶圓。
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