JP7134039B2 - 基板載置機構、成膜装置、および成膜方法 - Google Patents
基板載置機構、成膜装置、および成膜方法 Download PDFInfo
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- JP7134039B2 JP7134039B2 JP2018172375A JP2018172375A JP7134039B2 JP 7134039 B2 JP7134039 B2 JP 7134039B2 JP 2018172375 A JP2018172375 A JP 2018172375A JP 2018172375 A JP2018172375 A JP 2018172375A JP 7134039 B2 JP7134039 B2 JP 7134039B2
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
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- F25D25/00—Charging, supporting, and discharging the articles to be cooled
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Description
まず、第1の実施形態について説明する。
図1は第1の実施形態に係る基板載置機構を備えた成膜装置の一例を示す断面図である。
本実施形態に係る基板載置機構が適用される成膜装置は、超高真空かつ極低温の環境下において、スパッタリングによって基板上に膜を形成する成膜装置として形成される。このような極低温環境下において成膜される膜としては、例えばトンネル磁気抵抗(Tunneling Magneto Resistance;TMR)素子に用いられる磁性膜を挙げることができる。基板としては、例えば半導体ウエハを挙げることができるが、これに限定されない。
次に、第2の実施形態について説明する。
図4は第2の実施形態に係る基板載置機構を示す断面図である。
本実施形態に係る基板載置機構501も第1の実施形態の基板載置機構50と同様、スパッタリング成膜装置に適用されるものである。本実施形態に係る基板載置機構501の基本構成は第1の実施形態の基板載置機構50と同様であるから、図1と同じものには同じ符号を付して説明を省略する。
次に、第3の実施形態について説明する。
図5は第3の実施形態に係る基板載置機構を示す断面図である。
本実施形態に係る基板載置機構502も第1の実施形態の基板載置機構50と同様、スパッタリング成膜装置に適用されるものである。本実施形態に係る基板載置機構502の基本構成は第1の実施形態の基板載置機構50および第2の実施形態の基板載置機構501と同様であるから、図1および図4と同じものには同じ符号を付して説明を省略する。
次に、第4の実施形態について説明する。
図6は第4の実施形態に係る基板載置機構を示す断面図、図7はその接離構造部および接離機構を示す断面図である。
本実施形態に係る基板載置機構503も第1~第3の実施形態の基板載置機構50、501、502と同様、スパッタリング成膜装置に適用されるものである。本実施形態に係る基板載置機構503の基本構成は第1~第3の実施形態の基板載置機構50、501、502と同様であるから、図1、図4、図5と同じものには同じ符号を付して説明を省略する。
以上、実施形態について説明したが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の特許請求の範囲およびその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。
10;真空容器
30;スパッタ粒子放出部
32;ターゲット
50;基板載置機構
51;載置台
52;冷却ヘッド
58;冷凍機
53,53a,53b;接離機構
54;回転機構
70;制御部
510,510a,510b;接離構造部
W;基板
Claims (13)
- 成膜装置内で成膜が行われる基板を載置する基板載置機構であって、
基板を載置する基板載置面を有する載置台と、
前記載置台の前記基板載置面と反対側に対向して設けられ、冷凍機により極低温に冷却された冷却ヘッドと、
前記載置台と前記冷却ヘッドを接離させる接離機構と、
載置台を回転させる回転機構と、
前記載置台と前記冷却ヘッドとの間に設けられ、前記載置台側の第1部材と前記冷却ヘッド側の第2部材とを有し、前記接離機構により前記第1部材と前記第2部材との間が接離する接離構造部と、
制御部と、
を備え、
前記第1部材は、前記載置台の下面に設けられ、その内側に当接面を有する当接部材であり、前記第2部材は、水平方向に移動して前記当接部材の当接面に対して接離する接触部材であり、
前記制御部は、成膜時以外は、前記接離機構により前記載置台と前記冷却ヘッドを接触させた状態とし、その状態で前記基板を前記載置台に載置させ、成膜時には、前記接離機構により前記載置台と前記冷却ヘッドを離隔させた状態で前記回転機構により前記載置台を回転させる、基板載置機構。 - 前記載置台は、前記基板を吸着する静電チャックを有する、請求項1に記載の基板載置機構。
- 前記接離機構は、前記載置台を昇降させるアクチュエータにより前記載置台と前記冷却ヘッドとを接離する、請求項1または請求項2に記載の基板載置機構。
- 前記載置台は、前記基板よりも十分大きな熱容量を有する、請求項1から請求項3のいずれか1項に記載の基板載置機構。
- 前記載置台と前記冷却ヘッドは直接接触され、前記載置台と前記冷却ヘッドが接触した状態で、これらの間に伝熱用のガスを供給するガス供給機構を有する、請求項1から請求項4のいずれか1項に記載の基板載置機構。
- 前記接離機構は、ガスの圧力により伸縮する伸縮部を有し、前記伸縮部による伸縮により、前記第2部材を水平に移動させて前記第1部材に接離させる、請求項1から請求項5のいずれか1項に記載の基板載置機構。
- 成膜装置内で成膜が行われる基板を載置する基板載置機構であって、
基板を載置する基板載置面を有する載置台と、
前記載置台の前記基板載置面と反対側に対向して設けられ、冷凍機により極低温に冷却された冷却ヘッドと、
前記載置台と前記冷却ヘッドを接離させる接離機構と、
載置台を回転させる回転機構と、
前記載置台と前記冷却ヘッドとの間に設けられ、前記載置台側の第1部材と前記冷却ヘッド側の第2部材とを有し、前記接離機構により前記第1部材と前記第2部材との間が接離する接離構造部と、
制御部と、
を備え、
前記第1部材は、前記載置台の下面に接続された第1のセラミックス部材であり、前記第2部材は、前記冷却ヘッドの上面に接続された第2のセラミックス部材であり、前記第1のセラミックス部材の下面と前記第2のセラミックス部材の上面とが接離し、
前記第1のセラミックス部材および前記第2のセラミックス部材の互いの合わせ面は、鏡面加工されており、
前記制御部は、成膜時以外は、前記接離機構により前記載置台と前記冷却ヘッドを接触させた状態とし、その状態で前記基板を前記載置台に載置させ、成膜時には、前記接離機構により前記載置台と前記冷却ヘッドを離隔させた状態で前記回転機構により前記載置台を回転させる、基板載置機構。 - 前記第2のセラミックス部材は、その上面に複数の凹部を有し、前記第1のセラミックス部材と前記第2のセラミックス部材が接触した際に、前記凹部に伝熱用のガスを供給するガス供給機構をさらに有する、請求項7に記載の基板載置機構。
- 前記第1のセラミックス部材および前記第2のセラミックス部材のいずれかに電極が設けられており、前記電極に電圧を印加することにより、前記第1のセラミックス部材および前記第2のセラミックス部材の一方に対して他方を静電吸着する、請求項7または請求項8に記載の基板載置機構。
- 前記接離機構は、前記第2のセラミックス部材と前記冷却ヘッドとの間に設けられた伸縮部と、前記伸縮部にガスを供給するガス供給部とを有し、前記伸縮部にガスを供給することにより、そのガス圧によって前記第1のセラミックス部材と前記第2のセラミックス部材を接触させる、請求項7から請求項9のいずれか1項に記載の基板載置機構。
- 前記第1および第2のセラミックス部材は、アルミナ、サファイア、窒化アルミニウムのいずれかで構成されている、請求項7から請求項10のいずれか1項に記載の基板載置機構。
- 真空容器と、
前記真空容器内で基板を載置する請求項1から請求項11に記載の基板載置機構と、
前記載置機構の載置された基板にスパッタ粒子を放出して成膜を行うスパッタ粒子放出部と、
を有する、成膜装置。 - 成膜装置により基板上に膜を形成する成膜方法であって、
前記成膜装置は、
真空容器と、
前記真空容器内で基板を載置する基板載置機構と、
前記載置機構の載置された基板にスパッタ粒子を放出して成膜を行うスパッタ粒子放出部と、
を備え、
前記基板載置機構は、
基板を載置する基板載置面を有する載置台と、
前記載置台の前記基板載置面と反対側に対向して設けられ、冷凍機により極低温に冷却された冷却ヘッドと、
前記載置台と前記冷却ヘッドを接離させる接離機構と、
載置台を回転させる回転機構と、
前記載置台と前記冷却ヘッドとの間に設けられ、前記載置台側の第1部材と前記冷却ヘッド側の第2部材とを有し、前記接離機構により前記第1部材と前記第2部材との間が接離する接離構造部と、
を有し、
前記第1部材は、前記載置台の下面に設けられ、その内側に当接面を有する当接部材であり、前記第2部材は、水平方向に移動して前記当接部材の当接面に対して接離する接触部材であり、
前記成膜方法は、
前記載置台と前記冷却ヘッドとを接触させた状態とする工程と、
前記冷却ヘッドに接触した状態の前記載置台上に基板を載置し、基板を冷却する工程と、
前記載置台と前記冷却ヘッドとを離隔させる工程と、
前記基板が載置された前記載置台を回転させながら、前記スパッタ粒子を放出させて基板に対して成膜を行う工程と、
を有する、成膜方法。
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