JP2023539381A - イオンビームエッチング機及びその昇降回転テーブル装置 - Google Patents
イオンビームエッチング機及びその昇降回転テーブル装置 Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 67
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 21
- 230000003028 elevating effect Effects 0.000 title claims description 31
- 230000007246 mechanism Effects 0.000 claims description 19
- 239000010453 quartz Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 238000005096 rolling process Methods 0.000 claims description 10
- 239000011553 magnetic fluid Substances 0.000 claims description 5
- 230000007935 neutral effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 34
- 238000009826 distribution Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/67017—Apparatus for fluid treatment
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- H01J37/08—Ion sources; Ion guns
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- H01J37/02—Details
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20214—Rotation
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20235—Z movement or adjustment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3151—Etching
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- Condensed Matter Physics & Semiconductors (AREA)
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- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
上部ハウジングと、下部ハウジングと、中央部ベローズとを含み、前記上部ハウジングは下部ハウジングの上方に位置し、上端に軸孔が設けられ、前記中央部ベローズは上端が上部ハウジングに密封接続され、下端が下部ハウジングに密封接続される密閉ハウジングと、
軸孔を貫通して配置され、軸孔との間に可動シールが設けられ、密閉ハウジングの外部に位置する上端にウエハを載置するためのウエハ載置台が設けられ、上部ハウジングとの間に第1軸方向ストッパ機構がさらに設けられる回転軸と、
上部ハウジング内に取り付けられ、回転軸を駆動して軸孔に沿って回転させることに用いられる回転駆動ユニットと、
下部ハウジング内に取り付けられ、回転軸を駆動して軸方向に沿って昇降させることに用いられる昇降駆動ユニットと、を含み、
前記回転軸と上部ハウジングは第1軸方向ストッパ機構によって同期昇降し、前記回転駆動ユニットは上部ハウジングに追従して同期昇降する真空エッチングチャンバ内に用いられる昇降回転テーブル装置を提供する。
上記の昇降回転テーブル装置をさらに含むイオンビームエッチング機である。
Claims (10)
- 真空エッチングチャンバ内に用いられる昇降回転テーブル装置であって、
上部ハウジング(101)と、下部ハウジングと、中央部ベローズ(103)とを含み、前記上部ハウジング(101)は下部ハウジングの上方に位置し、上端に軸孔(101a)が設けられ、前記中央部ベローズ(103)は上端が上部ハウジング(101)に密封接続され、下端が下部ハウジングに密封接続される密閉ハウジングと、
軸孔(101a)を貫通して配置され、軸孔(101a)との間に可動シールが設けられ、密閉ハウジングの外部に位置する上端に、ウエハを載置するためのウエハ載置台(204)が設けられ、上部ハウジング(101)との間に第1軸方向ストッパ機構がさらに設けられる回転軸(2)と、
上部ハウジング(101)内に取り付けられ、回転軸(2)を駆動して軸孔(101a)に沿って回転させることに用いられる回転駆動ユニットと、
下部ハウジング内に取り付けられ、回転軸(2)を駆動して軸方向に沿って昇降させることに用いられる昇降駆動ユニットと、を含み、
前記回転軸(2)と上部ハウジング(101)は、第1軸方向ストッパ機構によって同期昇降し、前記回転駆動ユニットは、上部ハウジング(101)に追従して同期昇降することを特徴とする真空エッチングチャンバ内に用いられる昇降回転テーブル装置。 - 前記回転駆動ユニットは中空リング型モータであり、前記中空リング型モータの回転子(301)は回転軸(2)に固定接続され、前記中空リング型モータの固定子(302)は上部ハウジング(101)に固定接続され、前記中空リング型モータは回転軸(2)と上部ハウジング(101)との間の第1軸方向ストッパ機構となることを特徴とする請求項1に記載の真空エッチングチャンバ内に用いられる昇降回転テーブル装置。
- 前記昇降駆動ユニットは、回転軸(2)の昇降方向に沿って配置される親ねじ(402)と、下部ハウジングに取り付けられ、親ねじ(402)を回転駆動することに用いられる回転駆動モータ(401)と、親ねじ(402)の外側に螺合されるナットスライダ(403)とを含み、親ねじ(402)が回転すると、ナットスライダ(403)は親ねじ(402)に沿って昇降し、前記ナットスライダ(403)と回転軸(2)との間に第2軸方向ストッパ機構が設けられ、前記ナットスライダ(403)と回転軸(2)は第2軸方向ストッパ機構によって同期昇降することを特徴とする請求項1又は2に記載の真空エッチングチャンバ内に用いられる昇降回転テーブル装置。
- 前記回転軸(2)の下端に軸心に沿ってガイド円孔(202)が開けられ、前記第2軸方向ストッパ機構は転がり軸受(203)を含み、前記転がり軸受(203)の外輪はガイド円孔(202)の内壁に固定接続され、前記転がり軸受(203)の内輪は回転軸(2)に固定接続されることを特徴とする請求項3に記載の真空エッチングチャンバ内に用いられる昇降回転テーブル装置。
- 前記昇降駆動ユニットは、下部ハウジングに固定され、回転軸(2)の昇降方向に沿って配置される第1ガイドスライドバー(404)をさらに含み、前記ナットスライダ(403)は第1ガイドスライドバー(404)の外側にスライド可能に嵌着されることを特徴とする請求項4に記載の真空エッチングチャンバ内に用いられる昇降回転テーブル装置。
- 前記昇降駆動ユニットはリニアアクチュエータであり、前記リニアアクチュエータの主軸は回転軸(2)の昇降方向に沿って運動すると、上部ハウジング(101)又は主軸に接続され、上部ハウジング(101)、回転軸(2)及び回転駆動ユニットを駆動して同期昇降させることを特徴とする請求項1又は2に記載の真空エッチングチャンバ内に用いられる昇降回転テーブル装置。
- 前記密閉ハウジングは、下部ハウジングに固定され、回転軸(2)の昇降方向に沿って配置される複数の第2ガイドスライドバー(104)をさらに含み、前記上部ハウジング(101)は、第2ガイドスライドバー(104)の外側にスライド可能に嵌着されることを特徴とする請求項1に記載の真空エッチングチャンバ内に用いられる昇降回転テーブル装置。
- 前記可動シールは磁性流体シール構造であることを特徴とする請求項1に記載の真空エッチングチャンバ内に用いられる昇降回転テーブル装置。
- 真空エッチングチャンバ(6)、イオン源及びグリッド(7)を含み、前記イオン源によって生成されたイオンはグリッド(7)によって加速され、真空エッチングチャンバ(6)に入ってウエハに衝突するイオンビームエッチング機であって、
請求項1~8のいずれかに記載の昇降回転テーブル装置をさらに含むことを特徴とするイオンビームエッチング機。 - 前記イオン源は石英筒(801)と、RFコイル(802)と、中和器(803)とを含み、前記石英筒(801)は、一端が真空エッチングチャンバ(6)に連通し、他端がプロセスガスに連通して吸気し、前記グリッド(7)は石英筒(801)の一端と真空エッチングチャンバ(6)との間に位置し、前記RFコイル(802)は石英筒(801)の外周に位置し、プロセスガスは石英筒(801)の他端から入り、RFコイル(802)は石英筒(801)内で励起して正電荷プラズマを生成し、正電荷プラズマはグリッド(7)によって加速され、中和器(803)は電子を放出し、グリッド(7)を経た正電荷プラズマは電子と中和して中性イオンとなり、中性イオンは昇降回転テーブル装置(5)上のウエハに衝突することを特徴とする請求項9記載のイオンビームエッチング機。
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CN202010926525.3A CN114156196A (zh) | 2020-09-07 | 2020-09-07 | 一种离子束刻蚀机及其升降旋转台装置 |
CN202010926525.3 | 2020-09-07 | ||
PCT/CN2021/100680 WO2022048241A1 (zh) | 2020-09-07 | 2021-06-17 | 一种离子束刻蚀机及其升降旋转台装置 |
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CN116960048A (zh) * | 2022-04-20 | 2023-10-27 | 江苏鲁汶仪器股份有限公司 | 一种晶圆载台装置 |
CN115354276B (zh) * | 2022-07-18 | 2024-04-26 | 中国电子科技集团公司第四十八研究所 | 一种用于刻蚀及溅射的工件台 |
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TW331652B (en) * | 1995-06-16 | 1998-05-11 | Ebara Corp | Thin film vapor deposition apparatus |
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US11149345B2 (en) | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
JP7134039B2 (ja) * | 2018-09-14 | 2022-09-09 | 東京エレクトロン株式会社 | 基板載置機構、成膜装置、および成膜方法 |
CN209367723U (zh) * | 2018-11-26 | 2019-09-10 | 江苏鲁汶仪器有限公司 | 一种压环无摩擦升降装置 |
CN109950121B (zh) | 2019-04-15 | 2021-07-27 | 江苏鲁汶仪器有限公司 | 一种通电离子源挡板 |
CN110566787A (zh) * | 2019-09-27 | 2019-12-13 | 哈工大机器人(合肥)国际创新研究院 | 一种机械式升降立柱 |
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2020
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2021
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- 2021-06-17 US US18/043,492 patent/US20230326709A1/en active Pending
- 2021-06-17 KR KR1020237007699A patent/KR20230044310A/ko unknown
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KR20230044310A (ko) | 2023-04-03 |
WO2022048241A1 (zh) | 2022-03-10 |
CN114156196A (zh) | 2022-03-08 |
EP4187580A1 (en) | 2023-05-31 |
TWI795846B (zh) | 2023-03-11 |
EP4187580A4 (en) | 2024-02-28 |
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JP7462370B2 (ja) | 2024-04-05 |
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