DE69815163D1 - Verfahren und Vorrichtung zur Abscheidung von Titanschichten - Google Patents

Verfahren und Vorrichtung zur Abscheidung von Titanschichten

Info

Publication number
DE69815163D1
DE69815163D1 DE69815163T DE69815163T DE69815163D1 DE 69815163 D1 DE69815163 D1 DE 69815163D1 DE 69815163 T DE69815163 T DE 69815163T DE 69815163 T DE69815163 T DE 69815163T DE 69815163 D1 DE69815163 D1 DE 69815163D1
Authority
DE
Germany
Prior art keywords
depositing titanium
titanium layers
layers
depositing
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69815163T
Other languages
English (en)
Other versions
DE69815163T2 (de
Inventor
Jun Zhao
Lee Luo
Xiao Jin Liang
Jia-Xiang Wang
Stefan Wolff
Talex Sajoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27365254&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69815163(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from US08/918,706 external-priority patent/US6051286A/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69815163D1 publication Critical patent/DE69815163D1/de
Application granted granted Critical
Publication of DE69815163T2 publication Critical patent/DE69815163T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001Maintaining constant desired temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE1998615163 1997-01-24 1998-01-26 Verfahren und Vorrichtung zur Abscheidung von Titanschichten Expired - Fee Related DE69815163T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US3765997P 1997-01-24 1997-01-24
US37659P 1997-01-24
US80009897A 1997-02-12 1997-02-12
US08/918,706 US6051286A (en) 1997-02-12 1997-08-22 High temperature, high deposition rate process and apparatus for depositing titanium layers
US918706 1997-08-22
US800098 2001-03-06

Publications (2)

Publication Number Publication Date
DE69815163D1 true DE69815163D1 (de) 2003-07-10
DE69815163T2 DE69815163T2 (de) 2004-05-06

Family

ID=27365254

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998615163 Expired - Fee Related DE69815163T2 (de) 1997-01-24 1998-01-26 Verfahren und Vorrichtung zur Abscheidung von Titanschichten

Country Status (3)

Country Link
EP (1) EP0855452B1 (de)
JP (1) JP3004621B2 (de)
DE (1) DE69815163T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432479B2 (en) 1997-12-02 2002-08-13 Applied Materials, Inc. Method for in-situ, post deposition surface passivation of a chemical vapor deposited film
JP3191290B2 (ja) 1999-01-07 2001-07-23 日本電気株式会社 半導体装置の製造方法及び半導体装置の製造方法に用いられるプラズマcvd装置
US6143080A (en) * 1999-02-02 2000-11-07 Silicon Valley Group Thermal Systems Llc Wafer processing reactor having a gas flow control system and method
US6703080B2 (en) * 2002-05-20 2004-03-09 Eni Technology, Inc. Method and apparatus for VHF plasma processing with load mismatch reliability and stability
EP1593147B1 (de) * 2003-02-11 2007-05-30 Genus, Inc. Gereinigter heizer-suszeptor für einen ald/cvd-reaktor
JP4595356B2 (ja) * 2004-03-12 2010-12-08 国立大学法人 奈良先端科学技術大学院大学 有機金属化学気相堆積装置用原料気化器
KR101374583B1 (ko) * 2007-03-01 2014-03-17 어플라이드 머티어리얼스, 인코포레이티드 Rf 셔터
JP2010111888A (ja) * 2008-11-04 2010-05-20 Tokyo Electron Ltd Ti膜の成膜方法および成膜装置、ならびに記憶媒体
US9316569B2 (en) 2009-11-27 2016-04-19 Hysitron, Inc. Micro electro-mechanical heater
WO2013074623A1 (en) 2011-11-14 2013-05-23 Roger Schmitz Probe tip heating assembly
WO2013082148A1 (en) 2011-11-28 2013-06-06 Lucas Paul Keranen High temperature heating system
US9324589B2 (en) * 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
EP2861934B1 (de) 2012-06-13 2017-05-03 Hysitron, Inc. Umweltkonditionierungsanordnung zur verwendung bei mechanischen prüfungen auf mikrometer- oder nano-ebene
US9322097B2 (en) 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
US10407771B2 (en) 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
GB201504202D0 (en) 2015-03-12 2015-04-29 Spts Technologies Ltd PE-CVD apparatus and method
KR102300756B1 (ko) 2017-11-21 2021-09-10 와틀로 일렉트릭 매뉴팩츄어링 컴파니 원자 보호층을 갖는 세라믹 받침대
JP7565947B2 (ja) 2019-05-24 2024-10-11 アプライド マテリアルズ インコーポレイテッド 基板処理チャンバ
US11421324B2 (en) 2020-10-21 2022-08-23 Applied Materials, Inc. Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition
DE102022105410B3 (de) 2022-03-08 2023-07-27 Maik Vieluf Vorrichtung und Verfahren zur Beschichtung von Partikeln
CN118398471A (zh) * 2024-06-28 2024-07-26 无锡邑文微电子科技股份有限公司 等离子体刻蚀设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE787599A (fr) * 1971-08-16 1973-02-16 Battelle Memorial Institute Vitrage filtrant antisolaire et isolant thermique
JPS6388314A (ja) * 1986-09-30 1988-04-19 Toshiba Corp 動圧空気軸受
IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
US5273609A (en) * 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US5173327A (en) * 1991-06-18 1992-12-22 Micron Technology, Inc. LPCVD process for depositing titanium films for semiconductor devices
US5356476A (en) * 1992-06-15 1994-10-18 Materials Research Corporation Semiconductor wafer processing method and apparatus with heat and gas flow control
EP0653501B1 (de) * 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD-Verfahren und Vorrichtung
JPH0864676A (ja) * 1994-08-17 1996-03-08 Sumitomo Metal Ind Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
DE69815163T2 (de) 2004-05-06
JP3004621B2 (ja) 2000-01-31
EP0855452B1 (de) 2003-06-04
EP0855452A1 (de) 1998-07-29
JPH10298768A (ja) 1998-11-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee