IT1198290B - Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori - Google Patents

Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori

Info

Publication number
IT1198290B
IT1198290B IT22532/86A IT2253286A IT1198290B IT 1198290 B IT1198290 B IT 1198290B IT 22532/86 A IT22532/86 A IT 22532/86A IT 2253286 A IT2253286 A IT 2253286A IT 1198290 B IT1198290 B IT 1198290B
Authority
IT
Italy
Prior art keywords
decontamination
attack
growth
under vacuum
particular application
Prior art date
Application number
IT22532/86A
Other languages
English (en)
Other versions
IT8622532A0 (it
Inventor
Antonio Motta
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT22532/86A priority Critical patent/IT1198290B/it
Publication of IT8622532A0 publication Critical patent/IT8622532A0/it
Priority to DE87202219T priority patent/DE3787714T2/de
Priority to EP87202219A priority patent/EP0273470B1/en
Priority to US07/127,952 priority patent/US4892615A/en
Application granted granted Critical
Publication of IT1198290B publication Critical patent/IT1198290B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
IT22532/86A 1986-12-02 1986-12-02 Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori IT1198290B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT22532/86A IT1198290B (it) 1986-12-02 1986-12-02 Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
DE87202219T DE3787714T2 (de) 1986-12-02 1987-11-13 Verfahren zum Dekontaminieren einer Vakuumkammer zum Beschichten, zum Ätzen, zum Aufwachsen von hochreinen Schichten, insbesondere bei der Anwendung in der Halbleitertechnik.
EP87202219A EP0273470B1 (en) 1986-12-02 1987-11-13 Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology
US07/127,952 US4892615A (en) 1986-12-02 1987-12-02 Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22532/86A IT1198290B (it) 1986-12-02 1986-12-02 Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori

Publications (2)

Publication Number Publication Date
IT8622532A0 IT8622532A0 (it) 1986-12-02
IT1198290B true IT1198290B (it) 1988-12-21

Family

ID=11197511

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22532/86A IT1198290B (it) 1986-12-02 1986-12-02 Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori

Country Status (4)

Country Link
US (1) US4892615A (it)
EP (1) EP0273470B1 (it)
DE (1) DE3787714T2 (it)
IT (1) IT1198290B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
US5137047A (en) * 1990-08-24 1992-08-11 Mark George Delivery of reactive gas from gas pad to process tool
JP2870719B2 (ja) * 1993-01-29 1999-03-17 東京エレクトロン株式会社 処理装置
US5359787A (en) * 1993-04-16 1994-11-01 Air Products And Chemicals, Inc. High purity bulk chemical delivery system
EP0632144B1 (en) * 1993-06-30 1999-09-08 Applied Materials, Inc. Method of purging and pumping vacuum chamber to ultra-high vacuum
SG165131A1 (en) * 1994-01-27 2010-10-28 Insync Systems Inc Moisture removal in semiconductor processing
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
US5788825A (en) * 1996-12-30 1998-08-04 Samsung Electronics Co., Ltd. Vacuum pumping system for a sputtering device
US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
DE69815163T2 (de) * 1997-01-24 2004-05-06 Applied Materials, Inc., Santa Clara Verfahren und Vorrichtung zur Abscheidung von Titanschichten
US6051286A (en) * 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US6536460B1 (en) * 1997-03-21 2003-03-25 Advanced Micro Devices, Inc. Process line purge system and method
US6207027B1 (en) 1997-05-07 2001-03-27 Applied Materials, Inc. Method to reduce overhead time in an ion metal plasma process
JP3406488B2 (ja) * 1997-09-05 2003-05-12 東京エレクトロン株式会社 真空処理装置
US6207006B1 (en) 1997-09-18 2001-03-27 Tokyo Electron Limited Vacuum processing apparatus
US6105435A (en) 1997-10-24 2000-08-22 Cypress Semiconductor Corp. Circuit and apparatus for verifying a chamber seal, and method of depositing a material onto a substrate using the same
US6596091B1 (en) * 1998-04-29 2003-07-22 Applied Materials, Inc. Method for sweeping contaminants from a process chamber
WO2003031677A1 (de) * 2001-10-08 2003-04-17 Aixtron Ag Verfahren und vorrichtung zum abscheiden einer vielzahl von schichten auf einem substrat
WO2006127472A1 (en) * 2005-05-20 2006-11-30 Cardinal Cg Company Deposition chamber desiccation systems and methods of use thereof
TWI377264B (en) * 2007-02-05 2012-11-21 Hon Hai Prec Ind Co Ltd Sputtering device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL249150A (it) * 1959-03-25
JPS5840841A (ja) * 1981-09-03 1983-03-09 Nec Corp 半導体基板の処理方法
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
JPS61102048A (ja) * 1984-10-25 1986-05-20 Nec Corp 半導体装置の製造方法
US4687542A (en) * 1985-10-24 1987-08-18 Texas Instruments Incorporated Vacuum processing system
IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori

Also Published As

Publication number Publication date
DE3787714D1 (de) 1993-11-11
EP0273470B1 (en) 1993-10-06
EP0273470A3 (en) 1988-07-20
IT8622532A0 (it) 1986-12-02
US4892615A (en) 1990-01-09
DE3787714T2 (de) 1994-02-17
EP0273470A2 (en) 1988-07-06

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