KR900008714A - 플라즈마 화학기상증착에 의한 박막제조방법 - Google Patents
플라즈마 화학기상증착에 의한 박막제조방법Info
- Publication number
- KR900008714A KR900008714A KR1019880015257A KR880015257A KR900008714A KR 900008714 A KR900008714 A KR 900008714A KR 1019880015257 A KR1019880015257 A KR 1019880015257A KR 880015257 A KR880015257 A KR 880015257A KR 900008714 A KR900008714 A KR 900008714A
- Authority
- KR
- South Korea
- Prior art keywords
- vapor deposition
- chemical vapor
- thin films
- plasma chemical
- manufacturing thin
- Prior art date
Links
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880015257A KR950003958B1 (ko) | 1988-11-19 | 1988-11-19 | 플라즈마 화학기상증착에 의한 박막제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880015257A KR950003958B1 (ko) | 1988-11-19 | 1988-11-19 | 플라즈마 화학기상증착에 의한 박막제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900008714A true KR900008714A (ko) | 1990-06-03 |
| KR950003958B1 KR950003958B1 (ko) | 1995-04-21 |
Family
ID=19279417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880015257A KR950003958B1 (ko) | 1988-11-19 | 1988-11-19 | 플라즈마 화학기상증착에 의한 박막제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950003958B1 (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100381255B1 (ko) * | 1996-11-26 | 2003-06-18 | 주식회사 코오롱 | 스탬핑 호일 |
| KR100515291B1 (ko) * | 2002-08-30 | 2005-09-16 | 코리아케미칼 주식회사 | Ｕｖ 경화성 도료층이 형성된 다기능 열전사지 및 그제조방법 |
-
1988
- 1988-11-19 KR KR1019880015257A patent/KR950003958B1/ko not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100381255B1 (ko) * | 1996-11-26 | 2003-06-18 | 주식회사 코오롱 | 스탬핑 호일 |
| KR100515291B1 (ko) * | 2002-08-30 | 2005-09-16 | 코리아케미칼 주식회사 | Ｕｖ 경화성 도료층이 형성된 다기능 열전사지 및 그제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950003958B1 (ko) | 1995-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20010308 Year of fee payment: 7 |
|
| LAPS | Lapse due to unpaid annual fee |