SG165131A1 - Moisture removal in semiconductor processing - Google Patents

Moisture removal in semiconductor processing

Info

Publication number
SG165131A1
SG165131A1 SG9605426-7A SG1996005426A SG165131A1 SG 165131 A1 SG165131 A1 SG 165131A1 SG 1996005426 A SG1996005426 A SG 1996005426A SG 165131 A1 SG165131 A1 SG 165131A1
Authority
SG
Singapore
Prior art keywords
chamber
substrate
moisture
evacuated
heated
Prior art date
Application number
SG9605426-7A
Inventor
Frank R Balma
Brent D Elliot
Original Assignee
Insync Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Insync Systems Inc filed Critical Insync Systems Inc
Publication of SG165131A1 publication Critical patent/SG165131A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Novel processes for improving uniformity, reliability, and throughput of processes used in semiconductor manufacturing. In one process of the present invention used to reduce moisture contamination, a substrate is placed in a chamber. The chamber is then evacuated. Next, the chamber is refilled with a dry, heated gas to desorb any moisture attached to the surface of the substrate. The chamber is then evacuated to remove the heated gas and any moisture desorbed from the surface of the substrate. The process can be repeated to insure complete removal of all moisture present in the chamber and on the substrate. In another process, used to precisely control gas temperature, gases used in a semiconductor process are heated to reaction temperature prior to injection into a reaction vessel.
SG9605426-7A 1994-01-27 1995-01-12 Moisture removal in semiconductor processing SG165131A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22945094A 1994-01-27 1994-01-27
US26692994A 1994-06-27 1994-06-27

Publications (1)

Publication Number Publication Date
SG165131A1 true SG165131A1 (en) 2010-10-28

Family

ID=26923315

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9605426-7A SG165131A1 (en) 1994-01-27 1995-01-12 Moisture removal in semiconductor processing

Country Status (6)

Country Link
EP (1) EP0741909A4 (en)
JP (1) JPH09508494A (en)
KR (1) KR970700935A (en)
AU (1) AU1559195A (en)
SG (1) SG165131A1 (en)
WO (1) WO1995020823A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5992463A (en) 1996-10-30 1999-11-30 Unit Instruments, Inc. Gas panel
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
JP2001319885A (en) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc Processing system for substrate and method for producing semiconductor
US6436194B1 (en) 2001-02-16 2002-08-20 Applied Materials, Inc. Method and a system for sealing an epitaxial silicon layer on a substrate
JP2006147922A (en) * 2004-11-22 2006-06-08 Seiko Epson Corp Apparatus for fabricating semiconductor device
US20120298998A1 (en) * 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US10796935B2 (en) * 2017-03-17 2020-10-06 Applied Materials, Inc. Electronic device manufacturing systems, methods, and apparatus for heating substrates and reducing contamination in loadlocks
CN111627797B (en) * 2020-06-08 2022-06-10 中国电子科技集团公司第二十四研究所 Processing method for improving bonding reliability of semiconductor chip

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141319A (en) * 1986-12-03 1988-06-13 Mitsubishi Electric Corp Dry etching treatment device
US5146869A (en) * 1990-06-11 1992-09-15 National Semiconductor Corporation Tube and injector for preheating gases in a chemical vapor deposition reactor
US5178651A (en) * 1991-08-07 1993-01-12 Balma Frank R Method for purifying gas distribution systems
US5244820A (en) * 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158392A (en) * 1982-03-15 1983-09-20 Matsushita Electronics Corp Cold trapping apparatus used for dry etching
US4981102A (en) * 1984-04-12 1991-01-01 Ethyl Corporation Chemical vapor deposition reactor and process
IT1198290B (en) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa METHOD OF DECONTAMINATION OF A CHAMBER USED IN PROCESSES UNDER VACUUM DEPOSITION, ATTACK OR GROWTH OF HIGH PURITY FILMS, OF PARTICULAR APPLICATION IN THE SEMICONDUCTOR TECHNOLOGY
US5019409A (en) * 1989-01-27 1991-05-28 Microelectronics And Computer Technology Corporation Method for coating the top of an electrical device
JPH03234021A (en) * 1990-02-09 1991-10-18 Mitsubishi Electric Corp Method and apparatus for cleaning semiconductor wafer
US5048201A (en) * 1990-07-13 1991-09-17 Interlab, Inc. Laminar flow system for drying parts
JP3023982B2 (en) * 1990-11-30 2000-03-21 東京エレクトロン株式会社 Film formation method
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US5188979A (en) * 1991-08-26 1993-02-23 Motorola Inc. Method for forming a nitride layer using preheated ammonia
JP3553939B2 (en) * 1993-05-13 2004-08-11 インターユニヴァーシテアー マイクロエレクトロニカ セントラム フェレニギング ゾンデル ビンシュトベヤーク Semiconductor processing method using a mixture of HF and carboxylic acid
EP0632144B1 (en) * 1993-06-30 1999-09-08 Applied Materials, Inc. Method of purging and pumping vacuum chamber to ultra-high vacuum
JPH08125185A (en) * 1994-10-21 1996-05-17 Tadahiro Omi Method and system for fabricating thin film transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141319A (en) * 1986-12-03 1988-06-13 Mitsubishi Electric Corp Dry etching treatment device
US5244820A (en) * 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
US5146869A (en) * 1990-06-11 1992-09-15 National Semiconductor Corporation Tube and injector for preheating gases in a chemical vapor deposition reactor
US5178651A (en) * 1991-08-07 1993-01-12 Balma Frank R Method for purifying gas distribution systems

Also Published As

Publication number Publication date
EP0741909A1 (en) 1996-11-13
JPH09508494A (en) 1997-08-26
WO1995020823A1 (en) 1995-08-03
AU1559195A (en) 1995-08-15
EP0741909A4 (en) 1998-01-07
KR970700935A (en) 1997-02-12

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