EP0741909A4 - Methods for improving semiconductor processing - Google Patents
Methods for improving semiconductor processingInfo
- Publication number
- EP0741909A4 EP0741909A4 EP95907316A EP95907316A EP0741909A4 EP 0741909 A4 EP0741909 A4 EP 0741909A4 EP 95907316 A EP95907316 A EP 95907316A EP 95907316 A EP95907316 A EP 95907316A EP 0741909 A4 EP0741909 A4 EP 0741909A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- methods
- semiconductor processing
- improving semiconductor
- improving
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22945094A | 1994-01-27 | 1994-01-27 | |
US229450 | 1994-01-27 | ||
US26692994A | 1994-06-27 | 1994-06-27 | |
US266929 | 1994-06-27 | ||
PCT/US1995/000131 WO1995020823A1 (en) | 1994-01-27 | 1995-01-12 | Methods for improving semiconductor processing |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0741909A1 EP0741909A1 (en) | 1996-11-13 |
EP0741909A4 true EP0741909A4 (en) | 1998-01-07 |
Family
ID=26923315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95907316A Withdrawn EP0741909A4 (en) | 1994-01-27 | 1995-01-12 | Methods for improving semiconductor processing |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0741909A4 (en) |
JP (1) | JPH09508494A (en) |
KR (1) | KR970700935A (en) |
AU (1) | AU1559195A (en) |
SG (1) | SG165131A1 (en) |
WO (1) | WO1995020823A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5992463A (en) | 1996-10-30 | 1999-11-30 | Unit Instruments, Inc. | Gas panel |
US6376387B2 (en) * | 1999-07-09 | 2002-04-23 | Applied Materials, Inc. | Method of sealing an epitaxial silicon layer on a substrate |
JP2001319885A (en) * | 2000-03-02 | 2001-11-16 | Hitachi Kokusai Electric Inc | Processing system for substrate and method for producing semiconductor |
US6436194B1 (en) | 2001-02-16 | 2002-08-20 | Applied Materials, Inc. | Method and a system for sealing an epitaxial silicon layer on a substrate |
JP2006147922A (en) * | 2004-11-22 | 2006-06-08 | Seiko Epson Corp | Apparatus for fabricating semiconductor device |
US20120298998A1 (en) * | 2011-05-25 | 2012-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device |
US10796935B2 (en) * | 2017-03-17 | 2020-10-06 | Applied Materials, Inc. | Electronic device manufacturing systems, methods, and apparatus for heating substrates and reducing contamination in loadlocks |
CN111627797B (en) * | 2020-06-08 | 2022-06-10 | 中国电子科技集团公司第二十四研究所 | Processing method for improving bonding reliability of semiconductor chip |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58158392A (en) * | 1982-03-15 | 1983-09-20 | Matsushita Electronics Corp | Cold trapping apparatus used for dry etching |
EP0273470A2 (en) * | 1986-12-02 | 1988-07-06 | STMicroelectronics S.r.l. | Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology |
JPH03234021A (en) * | 1990-02-09 | 1991-10-18 | Mitsubishi Electric Corp | Method and apparatus for cleaning semiconductor wafer |
WO1994027315A1 (en) * | 1993-05-13 | 1994-11-24 | Interuniversitair Microelektronica Centrum | Method for semiconductor processing using mixtures of hf and carboxylic acid |
EP0632144A2 (en) * | 1993-06-30 | 1995-01-04 | Applied Materials, Inc. | Method of purging and pumping vacuum chamber to ultra-high vacuum |
WO1996013067A1 (en) * | 1994-10-21 | 1996-05-02 | Tadahiro Ohmi | Method of, and apparatus for, producing thin film transistor |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4981102A (en) * | 1984-04-12 | 1991-01-01 | Ethyl Corporation | Chemical vapor deposition reactor and process |
JPS63141319A (en) * | 1986-12-03 | 1988-06-13 | Mitsubishi Electric Corp | Dry etching treatment device |
US5019409A (en) * | 1989-01-27 | 1991-05-28 | Microelectronics And Computer Technology Corporation | Method for coating the top of an electrical device |
US5244820A (en) * | 1990-03-09 | 1993-09-14 | Tadashi Kamata | Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method |
US5146869A (en) * | 1990-06-11 | 1992-09-15 | National Semiconductor Corporation | Tube and injector for preheating gases in a chemical vapor deposition reactor |
US5048201A (en) * | 1990-07-13 | 1991-09-17 | Interlab, Inc. | Laminar flow system for drying parts |
JP3023982B2 (en) * | 1990-11-30 | 2000-03-21 | 東京エレクトロン株式会社 | Film formation method |
US5320680A (en) * | 1991-04-25 | 1994-06-14 | Silicon Valley Group, Inc. | Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow |
US5178651A (en) * | 1991-08-07 | 1993-01-12 | Balma Frank R | Method for purifying gas distribution systems |
US5188979A (en) * | 1991-08-26 | 1993-02-23 | Motorola Inc. | Method for forming a nitride layer using preheated ammonia |
-
1995
- 1995-01-12 WO PCT/US1995/000131 patent/WO1995020823A1/en not_active Application Discontinuation
- 1995-01-12 SG SG9605426-7A patent/SG165131A1/en unknown
- 1995-01-12 AU AU15591/95A patent/AU1559195A/en not_active Abandoned
- 1995-01-12 JP JP7520051A patent/JPH09508494A/en active Pending
- 1995-01-12 EP EP95907316A patent/EP0741909A4/en not_active Withdrawn
-
1996
- 1996-07-27 KR KR1019960704068A patent/KR970700935A/en not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58158392A (en) * | 1982-03-15 | 1983-09-20 | Matsushita Electronics Corp | Cold trapping apparatus used for dry etching |
EP0273470A2 (en) * | 1986-12-02 | 1988-07-06 | STMicroelectronics S.r.l. | Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology |
JPH03234021A (en) * | 1990-02-09 | 1991-10-18 | Mitsubishi Electric Corp | Method and apparatus for cleaning semiconductor wafer |
WO1994027315A1 (en) * | 1993-05-13 | 1994-11-24 | Interuniversitair Microelektronica Centrum | Method for semiconductor processing using mixtures of hf and carboxylic acid |
EP0632144A2 (en) * | 1993-06-30 | 1995-01-04 | Applied Materials, Inc. | Method of purging and pumping vacuum chamber to ultra-high vacuum |
WO1996013067A1 (en) * | 1994-10-21 | 1996-05-02 | Tadahiro Ohmi | Method of, and apparatus for, producing thin film transistor |
Non-Patent Citations (5)
Title |
---|
LAURENTIS DE E ET AL: "MICROCONTAMINATION REDUCTION AND CORROSION PREVENTION FOR ALUMINUM ETCH THROUGH LOADLOCK IMPROVEMENTS", EXTENDED ABSTRACTS, vol. 92/1, 1 January 1992 (1992-01-01), pages 177/178, XP000549272 * |
PATENT ABSTRACTS OF JAPAN vol. 16, no. 14 (E - 1154) 14 January 1992 (1992-01-14) * |
PATENT ABSTRACTS OF JAPAN vol. 7, no. 283 (M - 263) 16 December 1983 (1983-12-16) * |
See also references of WO9520823A1 * |
WRESH W P ET AL: "VACUUM INTEGRITY IMPROVEMENT AND CONTROL IN SPUTTER SYSTEMS FOR MEMORY DEVICES", AIP CONFERENCE PROCEEDINGS, 3 April 1989 (1989-04-03), pages 147 - 150, XP000572462 * |
Also Published As
Publication number | Publication date |
---|---|
EP0741909A1 (en) | 1996-11-13 |
AU1559195A (en) | 1995-08-15 |
JPH09508494A (en) | 1997-08-26 |
SG165131A1 (en) | 2010-10-28 |
WO1995020823A1 (en) | 1995-08-03 |
KR970700935A (en) | 1997-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19960723 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB IE IT |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 19971125 |
|
AK | Designated contracting states |
Kind code of ref document: A4 Designated state(s): DE FR GB IE IT |
|
17Q | First examination report despatched |
Effective date: 19991206 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20000617 |