GB2290413B - Method of processing silicon - Google Patents

Method of processing silicon

Info

Publication number
GB2290413B
GB2290413B GB9511873A GB9511873A GB2290413B GB 2290413 B GB2290413 B GB 2290413B GB 9511873 A GB9511873 A GB 9511873A GB 9511873 A GB9511873 A GB 9511873A GB 2290413 B GB2290413 B GB 2290413B
Authority
GB
United Kingdom
Prior art keywords
processing silicon
silicon
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9511873A
Other versions
GB2290413A (en
GB9511873D0 (en
Inventor
Andrea Schilp
Gerhard Benz
Horst Muenzel
Franz Laermer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of GB9511873D0 publication Critical patent/GB9511873D0/en
Publication of GB2290413A publication Critical patent/GB2290413A/en
Application granted granted Critical
Publication of GB2290413B publication Critical patent/GB2290413B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
GB9511873A 1994-06-16 1995-06-12 Method of processing silicon Expired - Fee Related GB2290413B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19944420962 DE4420962C2 (en) 1994-06-16 1994-06-16 Process for processing silicon

Publications (3)

Publication Number Publication Date
GB9511873D0 GB9511873D0 (en) 1995-08-09
GB2290413A GB2290413A (en) 1995-12-20
GB2290413B true GB2290413B (en) 1998-04-15

Family

ID=6520681

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9511873A Expired - Fee Related GB2290413B (en) 1994-06-16 1995-06-12 Method of processing silicon

Country Status (2)

Country Link
DE (1) DE4420962C2 (en)
GB (1) GB2290413B (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19641288A1 (en) * 1996-10-07 1998-04-09 Bosch Gmbh Robert Process for anisotropic plasma etching of various substrates
DE19706682C2 (en) 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropic fluorine-based plasma etching process for silicon
DE19736370C2 (en) * 1997-08-21 2001-12-06 Bosch Gmbh Robert Process for anisotropic etching of silicon
DE19847455A1 (en) 1998-10-15 2000-04-27 Bosch Gmbh Robert Silicon multi-layer etching, especially for micromechanical sensor production, comprises etching trenches down to buried separation layer, etching exposed separation layer and etching underlying silicon layer
DE19906100C2 (en) * 1999-02-13 2003-07-31 Sls Micro Technology Gmbh Thermal flow sensor in microsystem technology
US6383938B2 (en) 1999-04-21 2002-05-07 Alcatel Method of anisotropic etching of substrates
US6291357B1 (en) 1999-10-06 2001-09-18 Applied Materials, Inc. Method and apparatus for etching a substrate with reduced microloading
DE10105187A1 (en) 2001-02-06 2002-08-08 Bosch Gmbh Robert Method for generating surface micromechanical structures and sensor
US6555480B2 (en) 2001-07-31 2003-04-29 Hewlett-Packard Development Company, L.P. Substrate with fluidic channel and method of manufacturing
DE10152254A1 (en) 2001-10-20 2003-04-30 Bosch Gmbh Robert Micromechanical component and corresponding manufacturing method
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US6554403B1 (en) 2002-04-30 2003-04-29 Hewlett-Packard Development Company, L.P. Substrate for fluid ejection device
US6981759B2 (en) 2002-04-30 2006-01-03 Hewlett-Packard Development Company, Lp. Substrate and method forming substrate for fluid ejection device
DE10234589A1 (en) 2002-07-30 2004-02-12 Robert Bosch Gmbh Layer system used in the production of micro-electromechanical structures comprises a passivating layer consisting of an inorganic partial layer and a polymeric partial layer formed on a silicon layer
DE10237249B4 (en) * 2002-08-14 2014-12-18 Excelitas Technologies Singapore Pte Ltd Method for the selective removal of material from the surface of a substrate
DE10237787A1 (en) 2002-08-17 2004-03-04 Robert Bosch Gmbh Layer system with a silicon layer and a passivation layer, method for producing a passivation layer on a silicon layer and their use
US6910758B2 (en) 2003-07-15 2005-06-28 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for fluid ejection device
DE102004036803A1 (en) 2004-07-29 2006-03-23 Robert Bosch Gmbh Method for etching a layer on a substrate
CH708113B1 (en) 2007-09-13 2014-12-15 Stéphane Von Gunten Anchor for a watch escapement.
WO2009080615A2 (en) 2007-12-21 2009-07-02 Solvay Fluor Gmbh Process for the production of microelectromechanical systems
WO2009090520A1 (en) * 2008-01-16 2009-07-23 Nxp B.V. High aspect ratio holes or trenches
US8481400B2 (en) 2010-09-17 2013-07-09 Infineon Technologies Ag Semiconductor manufacturing and semiconductor device with semiconductor structure
EP2879165A1 (en) 2013-11-28 2015-06-03 Solvay SA Etching Process
DE102022212453A1 (en) 2022-11-22 2024-05-23 Robert Bosch Gesellschaft mit beschränkter Haftung Method for producing a micro-electronic-mechanical vibration system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3927163A1 (en) * 1989-08-17 1991-02-21 Bosch Gmbh Robert Structuring disc-shaped monocrystalline semiconductor - using photomask for ion-etching of recess(es), orthogonal to semiconductor main surfaces
EP0414372A2 (en) * 1989-07-21 1991-02-27 Sony Corporation Dry etching methods
WO1991003074A1 (en) * 1989-08-17 1991-03-07 Robert Bosch Gmbh Process for structuring a semiconductor body
EP0624900A2 (en) * 1993-05-10 1994-11-17 Delco Electronics Corporation Method of micro-machining an integrated sensor on the surface of a silicon wafer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784720A (en) * 1985-05-03 1988-11-15 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
CA1260365A (en) * 1985-05-06 1989-09-26 Lee Chen Anisotropic silicon etching in fluorinated plasma
JPS61278146A (en) * 1985-06-03 1986-12-09 Toshiba Corp Optical treatment method
US4729815A (en) * 1986-07-21 1988-03-08 Motorola, Inc. Multiple step trench etching process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0414372A2 (en) * 1989-07-21 1991-02-27 Sony Corporation Dry etching methods
DE3927163A1 (en) * 1989-08-17 1991-02-21 Bosch Gmbh Robert Structuring disc-shaped monocrystalline semiconductor - using photomask for ion-etching of recess(es), orthogonal to semiconductor main surfaces
WO1991003074A1 (en) * 1989-08-17 1991-03-07 Robert Bosch Gmbh Process for structuring a semiconductor body
EP0624900A2 (en) * 1993-05-10 1994-11-17 Delco Electronics Corporation Method of micro-machining an integrated sensor on the surface of a silicon wafer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WPI Abstract Accession No. 91-058893/09 & DE3927163 (BOSCH) 21.02.91 (SEE ABSTRACT) *

Also Published As

Publication number Publication date
GB2290413A (en) 1995-12-20
DE4420962C2 (en) 1998-09-17
GB9511873D0 (en) 1995-08-09
DE4420962A1 (en) 1995-12-21

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130612