GB2290413A - Processing silicon in a plasma etch system - Google Patents
Processing silicon in a plasma etch system Download PDFInfo
- Publication number
- GB2290413A GB2290413A GB9511873A GB9511873A GB2290413A GB 2290413 A GB2290413 A GB 2290413A GB 9511873 A GB9511873 A GB 9511873A GB 9511873 A GB9511873 A GB 9511873A GB 2290413 A GB2290413 A GB 2290413A
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- gas
- plasma
- silicon
- passivating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 24
- 239000010703 silicon Substances 0.000 title claims description 24
- 238000005530 etching Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 10
- 230000000873 masking effect Effects 0.000 claims description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 101100279072 Candida albicans (strain SC5314 / ATCC MYA-2876) CEF3 gene Proteins 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 22
- 150000002500 ions Chemical class 0.000 description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- -1 for example SF Chemical compound 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000002105 tongue Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Description
Method of Processing silicon
Prior art
2290413 The invention proceeds from a method of processing silicon in accordance with the generic class of independent Claim 1. US-4 784 720 has already disclosed a method of processing silicon in a plasma etching system, in which method an etching gas and a passivating gas are used. Employing the etching gas and the passivating gas creates a trench having a side-wall passivation. The etching gas used is a chlorine or bromine supplier. Since chlorine and bromine bring about an appreciable etching of silicon only at relatively high ion energies in the plasma, only strongly anisotropic etching profiles can be achieved with these etching gases. DE 39 27 163 AI discloses a method of processing silicon in which an etched trench is generated which has a side-wall passivation. Proceeding from the floor regions of the trenches, structures can then be underetched by isotropic plasma etching. Since a lowtemperature oxide or low-temperature nitride is provided as side-wall passivation, the method requires a plurality of processing steps in different etching systems and deposition systems (plasma etcher, PECW system or LP= system).
Advantages of the invention On the other hand, the method according to the invention having the characterizing features of independent Claim 1 has the advantage that not only can a trench having a side-wall passivation be generated but the structures so formed can also be isotropically underetched in one and the same etching system without the waf er having to be removed f rom the system in the meantime. A particularly simple method with which underetched silicon structures can be generated is thus specified.
The measures cited in the dependent claims make possible advantageous further developments and improvements of the method specified in the independent claim. The reinforcement of the side-wall passivation improves the lateral etching resistance of the silicon structures in the subsequent isotropic underetching. Silicon can be processed particularly easily and at high etching rates by means of a fluorine plasma. Process gases containing a fluorocarbon or fluorinated hydrocarbon form a side-wall passivation composed of a chemically particularly resistant fluoropolymer. As a result of low ion energy, simple and thin etch maskings can be used and large differences in the etching rate of silicon substrate and masking substance can nevertheless be achieved. This applies, in particular, at high plasma densities and low ion energy. Deep and narrow trench structures having a side-wall passivation can be formed by the alternating or simultaneous use of etching gas and passivating gas.
Drawings Exemplary embodiments of the invention are shown in the figures and explained in greater detail in the description below. Figure 1 shown a silicon substrate with an etch masking, Figure 2 shows etched trenches with side wall passivation introduced into the latter, Figure 3 shows the underetching proceeding from the floor region of the trenches and Figure 4 shows a plasma etching system.
Description of the invention
Figure 1 shows a silicon substrate 1 with an tl 3 - applied etch masking 2. The etch masking 2 does not cover the surface of the silicon substrate in specified regions. In these regions, an etch attack on the silicon is carried out in the subsequent process steps. Suitable an materials for the etch masking 2 are, for example, a thin layer of photoresist or silicon oxide. The silicon substrate 1 is introduced into a plasma etching system for subsequent processing.
Figure 2 shows the silicon substrate 1 after a first plasma etching step. Trenches 3 are introduced by etching in the regions which were not covered by the etching mask 2. At the same time, the trenches 3 have a side-wall passivation 4. in the region of the floor 5, the trenches 3 are not covered by a passivating layer 4, with the result that the silicon of the substrate 1 is exposed at that point. The trenches 3 are etched in by employing a gas which etches silicon isotropically and a gas which forms a passivating layer. The isotropically etching gas used is a gas which supplies fluorine, for example SF, or NF3. The passivating gas used is a Teflon forming monomer, as a rule a fluorocarbon or fluorinated hydrocarbon (CEF3. C2P61 C2F41 C4F8). The etching gas and passivating gas can be used simultaneously in the plasma etching system in a suitable mixture. Alternatively, it is possible to carry out alternately a multiplicity of consecutive etching and passivating steps. In this way, perfectly anisotropically etched trenches 3 of great depth (several 10 gm) and small width (a few g=) can be achieved in the plasma even at low ion energies (a few electron volts) assuming a high plasma density. Because of the low ion energy, the erosion of the etching mask 2 is small. As a consequence of the ion action, the floor 5 of the trenches 3 remains tree and is not covered by the Tefloiitype fluoropolymer film of the side-wall passivation 4. Furthermore, it is also possible to add additional gases such as nitrogen, oxygen or argon in order to modify the processing properties of the etching process. In order to ensure an adequate plasma density, i.e. an adequately high concentration of chemically reactive ions, despite the low ion energy, the plasma etching system should have a suitable source and, for example, a microwave or magnetron plasma excitation system.
After the desired etched depth of the trenches 3 has been reached, the actual etching gas su lying fluorine can be shut off and only the Tefloriforming passivating gas supplied. As a result of this process, the thickness of the side-wall passivation 4 can be increased. During this process, simultaneous ion action ensures that the passivating film forms selectively only on the side walls of the trenches 3 and not on the etched floor 5.
Figure 3 shows the trenches 3 after a further etching step. in said further etching step, the silicon substrate 1 is processed exclusively with the fluorinesupplying etching gas. In this process, the chosen energy of the plasma is in the order of magnitude of only a few electron volts, with the result that the etching takes place almost perfectly isotropically. The underetching 6 then forms proceeding from the exposed etched floor 5 of the trenches 3, as is shown in Figure 3. In this process, the ion energy is not set exactly equal to zero electron volts in order to still be able to remove accidental microscopic deposits on the floor 5 during the isotropic underetching. Because of the low ion energy, ions accidentally striking the side wall are scarcely responsible for any attack on the side-wall passivation 4 or on the etching mask 2. if, as is shown in Figure 3, two trenches 3 are disposed immediately next to one another, a silicon web 7 which is disposed between the two trenches 3 can be completely detached from the substrate 1 by the isotropic underetching 6. Such structures make it possible to achieve, for example, thin deflection tongues or comb structures which can be used as acceleration sensors.
A particular advantage of the process sequence shown in Figures 1 to 3 is that all the etching processes can be carried out in one process without interruption or outward transfer of the wafer in one and the same plasma system. The etching gases and passivating gases mentioned can be utilized with one another or after one another in one and the same etching system. Furthermore, they enable the formation of particularly narrow and deep trenches 3 which can be underetched in a subsequent process step. In this way, structures can be generated 10 which can be employed as sensors.
Figure 4 shows diagramnatically a plasma etching system 11. The silicon substrate 1 and a further plasmagenerating means 10 are introduced into the plasma etching system 11. A high-frequency voltage which 15 determines the energy with which ions strike the substrate 1 can be applied to the substrate 1. The further plasma-generating means 10 can be designed an a simple electrode, a microwave generator, a magnetron or any other plasma source which generates a high plasma 20 density.
Claims (8)
1. Method of processing silicon, in which a silicon substrate (1) is provided with an etch masking (2) and introduced into a plasma etching system and exposed to a plasma, a trench (3) having a side-wall passivation (4) being generated by processing with an etching gas and a passivating gas, characterized in that an underetching (6) proceeding from the etched floor (5) of the trench (3) is introduced in the etching system by the etching gas in a further processing step.
2. Method according to Claim 1, characterized in that the side-wall passivation (4) is reinforced by a deposition step prior to introducing the underetching (6) by etching.
3. Method according to one of the preceding claims, characterized in that a fluorine-supplying gas (for example, SF, or NP3) is selected for the etching gas.
4. Method according to one of the preceding claims, characterized in that a gas supplying fluorocarbon or fluorinated hydrocarbon (for example, CEF3. C2F6t C2P40 C4ps) is selected as passivating gas.
5. Method according to one of the preceding claims, 25 characterized in that the plasma energy is less than 50 electron volts, preferably less than 10 electron volts.
6. Method according to one of the preceding claims, characterized in that, to introduce the trench (3), the silicon substrate (1) is alternately processed with the etching gas and the passivating gas.
7. Method according to one of Claims 1 to 5, characterized in that, to introduce the trench (3), the silicon substrate (1) is simultaneously processed with a mixture of the etching gas and the passivating gas.
8. A method of processing silicon substantially as herein described with reference to the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19944420962 DE4420962C2 (en) | 1994-06-16 | 1994-06-16 | Process for processing silicon |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9511873D0 GB9511873D0 (en) | 1995-08-09 |
| GB2290413A true GB2290413A (en) | 1995-12-20 |
| GB2290413B GB2290413B (en) | 1998-04-15 |
Family
ID=6520681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9511873A Expired - Fee Related GB2290413B (en) | 1994-06-16 | 1995-06-12 | Method of processing silicon |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE4420962C2 (en) |
| GB (1) | GB2290413B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6489248B2 (en) | 1999-10-06 | 2002-12-03 | Applied Materials, Inc. | Method and apparatus for etch passivating and etching a substrate |
| US6555480B2 (en) | 2001-07-31 | 2003-04-29 | Hewlett-Packard Development Company, L.P. | Substrate with fluidic channel and method of manufacturing |
| US6554403B1 (en) | 2002-04-30 | 2003-04-29 | Hewlett-Packard Development Company, L.P. | Substrate for fluid ejection device |
| US6818562B2 (en) | 2002-04-19 | 2004-11-16 | Applied Materials Inc | Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system |
| US6867061B2 (en) * | 2001-02-06 | 2005-03-15 | Robert Bosch Gmbh | Method for producing surface micromechanical structures, and sensor |
| US6910758B2 (en) | 2003-07-15 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for fluid ejection device |
| US6981759B2 (en) | 2002-04-30 | 2006-01-03 | Hewlett-Packard Development Company, Lp. | Substrate and method forming substrate for fluid ejection device |
| US7312553B2 (en) | 2001-10-20 | 2007-12-25 | Robert Bosch Gmbh | Micromechanical component and method for producing same |
| US8524112B2 (en) | 2007-12-21 | 2013-09-03 | Solvay Fluor Gmbh | Process for the production of microelectromechanical systems |
| EP2879165A1 (en) | 2013-11-28 | 2015-06-03 | Solvay SA | Etching Process |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19641288A1 (en) * | 1996-10-07 | 1998-04-09 | Bosch Gmbh Robert | Process for anisotropic plasma etching of various substrates |
| DE19706682C2 (en) | 1997-02-20 | 1999-01-14 | Bosch Gmbh Robert | Anisotropic fluorine-based plasma etching process for silicon |
| DE19736370C2 (en) | 1997-08-21 | 2001-12-06 | Bosch Gmbh Robert | Process for anisotropic etching of silicon |
| DE19847455A1 (en) | 1998-10-15 | 2000-04-27 | Bosch Gmbh Robert | Silicon multi-layer etching, especially for micromechanical sensor production, comprises etching trenches down to buried separation layer, etching exposed separation layer and etching underlying silicon layer |
| DE19906100C2 (en) * | 1999-02-13 | 2003-07-31 | Sls Micro Technology Gmbh | Thermal flow sensor in microsystem technology |
| US6383938B2 (en) * | 1999-04-21 | 2002-05-07 | Alcatel | Method of anisotropic etching of substrates |
| DE10234589A1 (en) | 2002-07-30 | 2004-02-12 | Robert Bosch Gmbh | Layer system used in the production of micro-electromechanical structures comprises a passivating layer consisting of an inorganic partial layer and a polymeric partial layer formed on a silicon layer |
| DE10237249B4 (en) * | 2002-08-14 | 2014-12-18 | Excelitas Technologies Singapore Pte Ltd | Method for the selective removal of material from the surface of a substrate |
| DE10237787A1 (en) | 2002-08-17 | 2004-03-04 | Robert Bosch Gmbh | Layer system with a silicon layer and a passivation layer, method for producing a passivation layer on a silicon layer and their use |
| DE102004036803A1 (en) | 2004-07-29 | 2006-03-23 | Robert Bosch Gmbh | Method for etching a layer on a substrate |
| CH708113B1 (en) | 2007-09-13 | 2014-12-15 | Stéphane Von Gunten | Anchor for a watch escapement. |
| EP2232533A1 (en) * | 2008-01-16 | 2010-09-29 | Ipdia | High aspect ratio holes or trenches |
| US8481400B2 (en) | 2010-09-17 | 2013-07-09 | Infineon Technologies Ag | Semiconductor manufacturing and semiconductor device with semiconductor structure |
| DE102022212453A1 (en) | 2022-11-22 | 2024-05-23 | Robert Bosch Gesellschaft mit beschränkter Haftung | Method for producing a micro-electronic-mechanical vibration system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3927163A1 (en) * | 1989-08-17 | 1991-02-21 | Bosch Gmbh Robert | Structuring disc-shaped monocrystalline semiconductor - using photomask for ion-etching of recess(es), orthogonal to semiconductor main surfaces |
| EP0414372A2 (en) * | 1989-07-21 | 1991-02-27 | Sony Corporation | Dry etching methods |
| WO1991003074A1 (en) * | 1989-08-17 | 1991-03-07 | Robert Bosch Gmbh | Process for structuring a semiconductor body |
| EP0624900A2 (en) * | 1993-05-10 | 1994-11-17 | Delco Electronics Corporation | Method of micro-machining an integrated sensor on the surface of a silicon wafer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4784720A (en) * | 1985-05-03 | 1988-11-15 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
| CA1260365A (en) * | 1985-05-06 | 1989-09-26 | Lee Chen | Anisotropic silicon etching in fluorinated plasma |
| JPS61278146A (en) * | 1985-06-03 | 1986-12-09 | Toshiba Corp | Optical treatment method |
| US4729815A (en) * | 1986-07-21 | 1988-03-08 | Motorola, Inc. | Multiple step trench etching process |
-
1994
- 1994-06-16 DE DE19944420962 patent/DE4420962C2/en not_active Expired - Fee Related
-
1995
- 1995-06-12 GB GB9511873A patent/GB2290413B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0414372A2 (en) * | 1989-07-21 | 1991-02-27 | Sony Corporation | Dry etching methods |
| DE3927163A1 (en) * | 1989-08-17 | 1991-02-21 | Bosch Gmbh Robert | Structuring disc-shaped monocrystalline semiconductor - using photomask for ion-etching of recess(es), orthogonal to semiconductor main surfaces |
| WO1991003074A1 (en) * | 1989-08-17 | 1991-03-07 | Robert Bosch Gmbh | Process for structuring a semiconductor body |
| EP0624900A2 (en) * | 1993-05-10 | 1994-11-17 | Delco Electronics Corporation | Method of micro-machining an integrated sensor on the surface of a silicon wafer |
Non-Patent Citations (1)
| Title |
|---|
| 0PI Abstract Accession No. 91-058893/09 & DE-A-3 927 163 (BOSCH) 21.02.91 (SEE ABSTRACT) * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6489248B2 (en) | 1999-10-06 | 2002-12-03 | Applied Materials, Inc. | Method and apparatus for etch passivating and etching a substrate |
| US6867061B2 (en) * | 2001-02-06 | 2005-03-15 | Robert Bosch Gmbh | Method for producing surface micromechanical structures, and sensor |
| US6555480B2 (en) | 2001-07-31 | 2003-04-29 | Hewlett-Packard Development Company, L.P. | Substrate with fluidic channel and method of manufacturing |
| US7312553B2 (en) | 2001-10-20 | 2007-12-25 | Robert Bosch Gmbh | Micromechanical component and method for producing same |
| US6818562B2 (en) | 2002-04-19 | 2004-11-16 | Applied Materials Inc | Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system |
| US6893577B2 (en) | 2002-04-30 | 2005-05-17 | Hewlett-Packard Development Company, L.P. | Method of forming substrate for fluid ejection device |
| US6981759B2 (en) | 2002-04-30 | 2006-01-03 | Hewlett-Packard Development Company, Lp. | Substrate and method forming substrate for fluid ejection device |
| US7282448B2 (en) | 2002-04-30 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for fluid ejection device |
| US6554403B1 (en) | 2002-04-30 | 2003-04-29 | Hewlett-Packard Development Company, L.P. | Substrate for fluid ejection device |
| US6910758B2 (en) | 2003-07-15 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for fluid ejection device |
| US8524112B2 (en) | 2007-12-21 | 2013-09-03 | Solvay Fluor Gmbh | Process for the production of microelectromechanical systems |
| CN104979188A (en) * | 2007-12-21 | 2015-10-14 | 苏威氟有限公司 | Process for production of microelectromechanical systems |
| EP2879165A1 (en) | 2013-11-28 | 2015-06-03 | Solvay SA | Etching Process |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9511873D0 (en) | 1995-08-09 |
| DE4420962A1 (en) | 1995-12-21 |
| DE4420962C2 (en) | 1998-09-17 |
| GB2290413B (en) | 1998-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20130612 |