EP0741909A4 - Methoden zur verbesserung der halbleiterherstellung - Google Patents

Methoden zur verbesserung der halbleiterherstellung

Info

Publication number
EP0741909A4
EP0741909A4 EP95907316A EP95907316A EP0741909A4 EP 0741909 A4 EP0741909 A4 EP 0741909A4 EP 95907316 A EP95907316 A EP 95907316A EP 95907316 A EP95907316 A EP 95907316A EP 0741909 A4 EP0741909 A4 EP 0741909A4
Authority
EP
European Patent Office
Prior art keywords
methods
semiconductor processing
improving semiconductor
improving
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95907316A
Other languages
English (en)
French (fr)
Other versions
EP0741909A1 (de
Inventor
Frank R Balma
Brent D Elliot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Insync Systems Inc
Original Assignee
Insync Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Insync Systems Inc filed Critical Insync Systems Inc
Publication of EP0741909A1 publication Critical patent/EP0741909A1/de
Publication of EP0741909A4 publication Critical patent/EP0741909A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
EP95907316A 1994-01-27 1995-01-12 Methoden zur verbesserung der halbleiterherstellung Withdrawn EP0741909A4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US22945094A 1994-01-27 1994-01-27
US229450 1994-01-27
US26692994A 1994-06-27 1994-06-27
US266929 1994-06-27
PCT/US1995/000131 WO1995020823A1 (en) 1994-01-27 1995-01-12 Methods for improving semiconductor processing

Publications (2)

Publication Number Publication Date
EP0741909A1 EP0741909A1 (de) 1996-11-13
EP0741909A4 true EP0741909A4 (de) 1998-01-07

Family

ID=26923315

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95907316A Withdrawn EP0741909A4 (de) 1994-01-27 1995-01-12 Methoden zur verbesserung der halbleiterherstellung

Country Status (6)

Country Link
EP (1) EP0741909A4 (de)
JP (1) JPH09508494A (de)
KR (1) KR970700935A (de)
AU (1) AU1559195A (de)
SG (1) SG165131A1 (de)
WO (1) WO1995020823A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5992463A (en) 1996-10-30 1999-11-30 Unit Instruments, Inc. Gas panel
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
US6436194B1 (en) 2001-02-16 2002-08-20 Applied Materials, Inc. Method and a system for sealing an epitaxial silicon layer on a substrate
JP2006147922A (ja) * 2004-11-22 2006-06-08 Seiko Epson Corp 半導体装置の製造装置
US20120298998A1 (en) * 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US10796935B2 (en) * 2017-03-17 2020-10-06 Applied Materials, Inc. Electronic device manufacturing systems, methods, and apparatus for heating substrates and reducing contamination in loadlocks
CN111627797B (zh) * 2020-06-08 2022-06-10 中国电子科技集团公司第二十四研究所 一种提高半导体芯片键合可靠性的处理方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158392A (ja) * 1982-03-15 1983-09-20 Matsushita Electronics Corp ドライエツチング用コ−ルドトラツプ装置
EP0273470A2 (de) * 1986-12-02 1988-07-06 STMicroelectronics S.r.l. Verfahren zum Dekontaminieren einer Vakuumkammer zum Beschichten, zum Ätzen, zum Aufwachsen von hochreinen Schichten, insbesondere bei der Anwendung in der Halbleitertechnik
JPH03234021A (ja) * 1990-02-09 1991-10-18 Mitsubishi Electric Corp 半導体ウエハの洗浄装置及びその洗浄方法
WO1994027315A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
EP0632144A2 (de) * 1993-06-30 1995-01-04 Applied Materials, Inc. Verfahren zum Spülen und Auspumpen einer Vakuumkammer bis Ultra-Hoch-Vakuum
WO1996013067A1 (fr) * 1994-10-21 1996-05-02 Tadahiro Ohmi Procede et appareil de production d'un transistor a couche mince

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4981102A (en) * 1984-04-12 1991-01-01 Ethyl Corporation Chemical vapor deposition reactor and process
JPS63141319A (ja) * 1986-12-03 1988-06-13 Mitsubishi Electric Corp ドライエツチング処理装置
US5019409A (en) * 1989-01-27 1991-05-28 Microelectronics And Computer Technology Corporation Method for coating the top of an electrical device
US5244820A (en) * 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
US5146869A (en) * 1990-06-11 1992-09-15 National Semiconductor Corporation Tube and injector for preheating gases in a chemical vapor deposition reactor
US5048201A (en) * 1990-07-13 1991-09-17 Interlab, Inc. Laminar flow system for drying parts
JP3023982B2 (ja) * 1990-11-30 2000-03-21 東京エレクトロン株式会社 成膜方法
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US5178651A (en) * 1991-08-07 1993-01-12 Balma Frank R Method for purifying gas distribution systems
US5188979A (en) * 1991-08-26 1993-02-23 Motorola Inc. Method for forming a nitride layer using preheated ammonia

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158392A (ja) * 1982-03-15 1983-09-20 Matsushita Electronics Corp ドライエツチング用コ−ルドトラツプ装置
EP0273470A2 (de) * 1986-12-02 1988-07-06 STMicroelectronics S.r.l. Verfahren zum Dekontaminieren einer Vakuumkammer zum Beschichten, zum Ätzen, zum Aufwachsen von hochreinen Schichten, insbesondere bei der Anwendung in der Halbleitertechnik
JPH03234021A (ja) * 1990-02-09 1991-10-18 Mitsubishi Electric Corp 半導体ウエハの洗浄装置及びその洗浄方法
WO1994027315A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
EP0632144A2 (de) * 1993-06-30 1995-01-04 Applied Materials, Inc. Verfahren zum Spülen und Auspumpen einer Vakuumkammer bis Ultra-Hoch-Vakuum
WO1996013067A1 (fr) * 1994-10-21 1996-05-02 Tadahiro Ohmi Procede et appareil de production d'un transistor a couche mince

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
LAURENTIS DE E ET AL: "MICROCONTAMINATION REDUCTION AND CORROSION PREVENTION FOR ALUMINUM ETCH THROUGH LOADLOCK IMPROVEMENTS", EXTENDED ABSTRACTS, vol. 92/1, 1 January 1992 (1992-01-01), pages 177/178, XP000549272 *
PATENT ABSTRACTS OF JAPAN vol. 16, no. 14 (E - 1154) 14 January 1992 (1992-01-14) *
PATENT ABSTRACTS OF JAPAN vol. 7, no. 283 (M - 263) 16 December 1983 (1983-12-16) *
See also references of WO9520823A1 *
WRESH W P ET AL: "VACUUM INTEGRITY IMPROVEMENT AND CONTROL IN SPUTTER SYSTEMS FOR MEMORY DEVICES", AIP CONFERENCE PROCEEDINGS, 3 April 1989 (1989-04-03), pages 147 - 150, XP000572462 *

Also Published As

Publication number Publication date
KR970700935A (ko) 1997-02-12
JPH09508494A (ja) 1997-08-26
AU1559195A (en) 1995-08-15
SG165131A1 (en) 2010-10-28
EP0741909A1 (de) 1996-11-13
WO1995020823A1 (en) 1995-08-03

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