KR970700935A - 반도체 가공 개량 방법(methods for improving semiconductor processing) - Google Patents

반도체 가공 개량 방법(methods for improving semiconductor processing)

Info

Publication number
KR970700935A
KR970700935A KR1019960704068A KR19960704068A KR970700935A KR 970700935 A KR970700935 A KR 970700935A KR 1019960704068 A KR1019960704068 A KR 1019960704068A KR 19960704068 A KR19960704068 A KR 19960704068A KR 970700935 A KR970700935 A KR 970700935A
Authority
KR
South Korea
Prior art keywords
semiconductor processing
improving semiconductor
improving
processing
semiconductor
Prior art date
Application number
KR1019960704068A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970700935A publication Critical patent/KR970700935A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1019960704068A 1994-01-27 1996-07-27 반도체 가공 개량 방법(methods for improving semiconductor processing) KR970700935A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22945094A 1994-01-27 1994-01-27
US26692994A 1994-06-27 1994-06-27
PCT/US1995/000131 WO1995020823A1 (en) 1994-01-27 1995-01-12 Methods for improving semiconductor processing

Publications (1)

Publication Number Publication Date
KR970700935A true KR970700935A (ko) 1997-02-12

Family

ID=26923315

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960704068A KR970700935A (ko) 1994-01-27 1996-07-27 반도체 가공 개량 방법(methods for improving semiconductor processing)

Country Status (6)

Country Link
EP (1) EP0741909A4 (ko)
JP (1) JPH09508494A (ko)
KR (1) KR970700935A (ko)
AU (1) AU1559195A (ko)
SG (1) SG165131A1 (ko)
WO (1) WO1995020823A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010087293A (ko) * 2000-03-02 2001-09-15 엔도 마코토 기판처리장치 및 반도체 제조방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5992463A (en) 1996-10-30 1999-11-30 Unit Instruments, Inc. Gas panel
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
US6436194B1 (en) 2001-02-16 2002-08-20 Applied Materials, Inc. Method and a system for sealing an epitaxial silicon layer on a substrate
JP2006147922A (ja) * 2004-11-22 2006-06-08 Seiko Epson Corp 半導体装置の製造装置
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US10796935B2 (en) * 2017-03-17 2020-10-06 Applied Materials, Inc. Electronic device manufacturing systems, methods, and apparatus for heating substrates and reducing contamination in loadlocks
CN111627797B (zh) * 2020-06-08 2022-06-10 中国电子科技集团公司第二十四研究所 一种提高半导体芯片键合可靠性的处理方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158392A (ja) * 1982-03-15 1983-09-20 Matsushita Electronics Corp ドライエツチング用コ−ルドトラツプ装置
US4981102A (en) * 1984-04-12 1991-01-01 Ethyl Corporation Chemical vapor deposition reactor and process
IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
JPS63141319A (ja) * 1986-12-03 1988-06-13 Mitsubishi Electric Corp ドライエツチング処理装置
US5019409A (en) * 1989-01-27 1991-05-28 Microelectronics And Computer Technology Corporation Method for coating the top of an electrical device
JPH03234021A (ja) * 1990-02-09 1991-10-18 Mitsubishi Electric Corp 半導体ウエハの洗浄装置及びその洗浄方法
US5244820A (en) * 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
US5146869A (en) * 1990-06-11 1992-09-15 National Semiconductor Corporation Tube and injector for preheating gases in a chemical vapor deposition reactor
US5048201A (en) * 1990-07-13 1991-09-17 Interlab, Inc. Laminar flow system for drying parts
JP3023982B2 (ja) * 1990-11-30 2000-03-21 東京エレクトロン株式会社 成膜方法
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US5178651A (en) * 1991-08-07 1993-01-12 Balma Frank R Method for purifying gas distribution systems
US5188979A (en) * 1991-08-26 1993-02-23 Motorola Inc. Method for forming a nitride layer using preheated ammonia
DE69425821T2 (de) * 1993-05-13 2001-04-05 Imec Inter Uni Micro Electr Verfahren zum Ätzen Silizium-Oxid-Schichten mit Mischungen von HF und Carbonsäure
EP0632144B1 (en) * 1993-06-30 1999-09-08 Applied Materials, Inc. Method of purging and pumping vacuum chamber to ultra-high vacuum
JPH08125185A (ja) * 1994-10-21 1996-05-17 Tadahiro Omi 薄膜トランジスタ製造方法並びに製造装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010087293A (ko) * 2000-03-02 2001-09-15 엔도 마코토 기판처리장치 및 반도체 제조방법

Also Published As

Publication number Publication date
WO1995020823A1 (en) 1995-08-03
JPH09508494A (ja) 1997-08-26
SG165131A1 (en) 2010-10-28
EP0741909A1 (en) 1996-11-13
AU1559195A (en) 1995-08-15
EP0741909A4 (en) 1998-01-07

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E601 Decision to refuse application