DE69325983T2 - Verfahren und Vorrichtung zur chemischen Dampfabscheidung - Google Patents
Verfahren und Vorrichtung zur chemischen DampfabscheidungInfo
- Publication number
- DE69325983T2 DE69325983T2 DE69325983T DE69325983T DE69325983T2 DE 69325983 T2 DE69325983 T2 DE 69325983T2 DE 69325983 T DE69325983 T DE 69325983T DE 69325983 T DE69325983 T DE 69325983T DE 69325983 T2 DE69325983 T2 DE 69325983T2
- Authority
- DE
- Germany
- Prior art keywords
- vapor deposition
- chemical vapor
- deposition method
- chemical
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by using a condenser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4357271A JPH06196419A (ja) | 1992-12-24 | 1992-12-24 | 化学気相堆積装置及びそれによる半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69325983D1 DE69325983D1 (de) | 1999-09-16 |
DE69325983T2 true DE69325983T2 (de) | 2000-04-06 |
Family
ID=18453265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69325983T Expired - Fee Related DE69325983T2 (de) | 1992-12-24 | 1993-12-23 | Verfahren und Vorrichtung zur chemischen Dampfabscheidung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5776255A (de) |
EP (1) | EP0605205B1 (de) |
JP (1) | JPH06196419A (de) |
DE (1) | DE69325983T2 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5954911A (en) * | 1995-10-12 | 1999-09-21 | Semitool, Inc. | Semiconductor processing using vapor mixtures |
KR100190072B1 (ko) * | 1996-07-27 | 1999-06-01 | 윤종용 | 폴리이미드 도포장치 |
US6123765A (en) * | 1998-03-27 | 2000-09-26 | Mitsubishi Silicon America | Continuously fed single bubbler for epitaxial deposition of silicon |
US6526802B1 (en) | 2001-06-28 | 2003-03-04 | Guth Laboratories, Inc | Portable breath test simulator |
US6827974B2 (en) * | 2002-03-29 | 2004-12-07 | Pilkington North America, Inc. | Method and apparatus for preparing vaporized reactants for chemical vapor deposition |
US7771483B2 (en) * | 2003-12-30 | 2010-08-10 | Zimmer, Inc. | Tibial condylar hemiplasty implants, anchor assemblies, and related methods |
US6797337B2 (en) * | 2002-08-19 | 2004-09-28 | Micron Technology, Inc. | Method for delivering precursors |
JP4285741B2 (ja) * | 2003-10-24 | 2009-06-24 | 独立行政法人産業技術総合研究所 | 有機電界発光素子およびその作製方法 |
JP4366226B2 (ja) * | 2004-03-30 | 2009-11-18 | 東北パイオニア株式会社 | 有機elパネルの製造方法、有機elパネルの成膜装置 |
WO2007140406A2 (en) * | 2006-05-30 | 2007-12-06 | Advanced Technology Materials, Inc. | Storage and transport container for materials susceptible to physical state change under variable ambient temperature conditions |
FR2901713B1 (fr) * | 2006-06-01 | 2008-07-11 | Air Liquide | Procede de distribution de produits precurseurs, notamment pyrophoriques |
US8708320B2 (en) | 2006-12-15 | 2014-04-29 | Air Products And Chemicals, Inc. | Splashguard and inlet diffuser for high vacuum, high flow bubbler vessel |
DE102007020852A1 (de) * | 2007-05-02 | 2008-11-06 | Stein, Ralf | Gasversorgungssystem und Verfahren zur Bereitstellung eines gasförmigen Abscheidungsmediums |
JP5305328B2 (ja) * | 2007-06-07 | 2013-10-02 | 株式会社日立国際電気 | 基板処理装置 |
EP2297377B1 (de) * | 2008-05-30 | 2017-12-27 | Colorado State University Research Foundation | Auf plasma basierende chemikalienquellenvorrichtung und verfahren zu ihrer verwendung |
JP5155895B2 (ja) * | 2009-01-27 | 2013-03-06 | 日本エア・リキード株式会社 | 充填容器内の液体材料の供給装置および該液体材料の供給装置における充填容器内の液面管理方法 |
US8944420B2 (en) | 2009-03-19 | 2015-02-03 | Air Products And Chemicals, Inc. | Splashguard for high flow vacuum bubbler vessel |
US8162296B2 (en) * | 2009-03-19 | 2012-04-24 | Air Products And Chemicals, Inc. | Splashguard for high flow vacuum bubbler vessel |
US8555809B2 (en) * | 2010-01-14 | 2013-10-15 | Rohm And Haas Electronic Materials, Llc | Method for constant concentration evaporation and a device using the same |
TWI480418B (zh) * | 2012-01-16 | 2015-04-11 | Air Prod & Chem | 用於高流量真空氣泡器容器的防濺器 |
TWI516432B (zh) * | 2012-09-13 | 2016-01-11 | 南美特科技股份有限公司 | 固體前驅物微粒之輸送裝置 |
US9269544B2 (en) | 2013-02-11 | 2016-02-23 | Colorado State University Research Foundation | System and method for treatment of biofilms |
US9117636B2 (en) | 2013-02-11 | 2015-08-25 | Colorado State University Research Foundation | Plasma catalyst chemical reaction apparatus |
US9532826B2 (en) | 2013-03-06 | 2017-01-03 | Covidien Lp | System and method for sinus surgery |
US9555145B2 (en) | 2013-03-13 | 2017-01-31 | Covidien Lp | System and method for biofilm remediation |
US9957612B2 (en) | 2014-01-17 | 2018-05-01 | Ceres Technologies, Inc. | Delivery device, methods of manufacture thereof and articles comprising the same |
JP6258720B2 (ja) * | 2014-02-07 | 2018-01-10 | 住友化学株式会社 | ハイドライド気相成長装置、およびこれを用いた基板処理方法 |
US10237962B2 (en) | 2014-02-26 | 2019-03-19 | Covidien Lp | Variable frequency excitation plasma device for thermal and non-thermal tissue effects |
US9914632B2 (en) * | 2014-08-22 | 2018-03-13 | Applied Materials, Inc. | Methods and apparatus for liquid chemical delivery |
US10524849B2 (en) | 2016-08-02 | 2020-01-07 | Covidien Lp | System and method for catheter-based plasma coagulation |
CN111918982A (zh) * | 2019-02-25 | 2020-11-10 | 株式会社爱发科 | 等离子体cvd装置和等离子体cvd法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3901182A (en) * | 1972-05-18 | 1975-08-26 | Harris Corp | Silicon source feed process |
US4261933A (en) * | 1978-10-19 | 1981-04-14 | Water Pollution Control Corporation | Diffusion element |
US4278458A (en) * | 1979-02-07 | 1981-07-14 | Bell Telephone Laboratories, Incorporated | Optical fiber fabrication method and apparatus |
EP0058571A1 (de) * | 1981-02-18 | 1982-08-25 | National Research Development Corporation | Verfahren und Vorrichtung zum Zuführen einer kontrollierten Menge eines Reaktanten bei einem Dampfphasen-Abscheidungsverfahren |
JPS5927896U (ja) * | 1982-08-13 | 1984-02-21 | 日本碍子株式会社 | 散気装置 |
JPS59145053A (ja) * | 1983-02-07 | 1984-08-20 | 株式会社 富士電機総合研究所 | 電磁式粉砕,混合装置 |
US4517220A (en) * | 1983-08-15 | 1985-05-14 | Motorola, Inc. | Deposition and diffusion source control means and method |
JPS60248228A (ja) * | 1984-05-24 | 1985-12-07 | Sumitomo Electric Ind Ltd | バブリング装置 |
JPH0782996B2 (ja) * | 1986-03-28 | 1995-09-06 | キヤノン株式会社 | 結晶の形成方法 |
DE3708967A1 (de) * | 1987-03-19 | 1988-10-06 | Merck Patent Gmbh | Vorrichtung zur erzeugung eines gasgemisches nach dem saettigungsverfahren |
JP2538042B2 (ja) * | 1989-03-29 | 1996-09-25 | 株式会社エステック | 有機金属化合物の気化供給方法とその装置 |
JPH0326558A (ja) * | 1989-06-23 | 1991-02-05 | Nec Corp | プリンタの平滑印字方式 |
PT95232B (pt) * | 1989-09-09 | 1998-06-30 | Canon Kk | Processo de producao de uma pelicula de aluminio depositada |
EP0419939B1 (de) * | 1989-09-12 | 1994-02-23 | Stec Inc. | Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen |
EP0420596B1 (de) * | 1989-09-26 | 1996-06-19 | Canon Kabushiki Kaisha | Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage |
EP0420590B1 (de) * | 1989-09-26 | 1996-03-27 | Canon Kabushiki Kaisha | Verfahren zum Herstellen einer abgeschiedenen Schicht, und Verfahren zum Herstellen einer Halbleitervorrichtung |
EP0448223B1 (de) * | 1990-02-19 | 1996-06-26 | Canon Kabushiki Kaisha | Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid |
JP2895166B2 (ja) * | 1990-05-31 | 1999-05-24 | キヤノン株式会社 | 半導体装置の製造方法 |
US5078922A (en) * | 1990-10-22 | 1992-01-07 | Watkins-Johnson Company | Liquid source bubbler |
US5122391A (en) * | 1991-03-13 | 1992-06-16 | Watkins-Johnson Company | Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD |
JP2996101B2 (ja) * | 1994-08-05 | 1999-12-27 | 信越半導体株式会社 | 液体原料ガスの供給方法および装置 |
-
1992
- 1992-12-24 JP JP4357271A patent/JPH06196419A/ja active Pending
-
1993
- 1993-12-23 DE DE69325983T patent/DE69325983T2/de not_active Expired - Fee Related
- 1993-12-23 EP EP93310470A patent/EP0605205B1/de not_active Expired - Lifetime
-
1996
- 1996-07-05 US US08/675,843 patent/US5776255A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5776255A (en) | 1998-07-07 |
EP0605205B1 (de) | 1999-08-11 |
JPH06196419A (ja) | 1994-07-15 |
DE69325983D1 (de) | 1999-09-16 |
EP0605205A1 (de) | 1994-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69325983T2 (de) | Verfahren und Vorrichtung zur chemischen Dampfabscheidung | |
DE69510138D1 (de) | Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung | |
DE69324849D1 (de) | Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung | |
DE69019250D1 (de) | Verfahren und Vorrichtung zur chemischen Dampfphasenabscheidung. | |
DE68917870D1 (de) | Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung. | |
DE69525483D1 (de) | Vorrichtung und Verfahren zur Zersetzung von chemischen Verbindungen | |
DE69633770D1 (de) | Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung dünner Schichten | |
DE69506549D1 (de) | Vorrichtung und verfahren zur abgabe von chemischen lösungen | |
DE69313597T2 (de) | Verfahren und Vorrichtung zur Megaschallreinigung | |
DE600440T1 (de) | Verfahren und Vorrichtung zur Reinigung von Abgasen. | |
DE69319621T2 (de) | Verfahren und vorrichtung zur pyrolitischen zersetzung von kohlenwasserstoffen | |
DE69308204D1 (de) | Verfahren zur Walzenreinigung und Vorrichtung dafür | |
DE69327069D1 (de) | Vorrichtung und Verfahren zur Plasmaerzeugung | |
DE59403354D1 (de) | Verfahren und Vorrichtung zur Entstickung von Rauchgasen | |
DE69405900D1 (de) | Verfahren und Vorrichtung zur Vakuumbehandlung | |
DE69413891D1 (de) | Verfahren und vorrichtung zur intermittierenden beschichtung | |
DE69316479T2 (de) | Verfahren und Vorrichtung zur Reinigung von Heliumgruppe Gasen | |
DE69129801T2 (de) | Verfahren und vorrichtung zur herstellung von chemischen produkten | |
DE69325604T2 (de) | Verfahren und Vorrichtung zur Trockenätzung | |
DE69416273D1 (de) | Verfahren und Vorrichtung zur gleichmässigen Beschichtung von Katalysatorröhren | |
DE69301474D1 (de) | Verfahren und Vorrichtung zur Hochdruck-IMC-Beschichtung | |
DE69315550T2 (de) | Vorrichtung und verfahren zur herstellung von farbrollern | |
DE69313211T2 (de) | Verfahren und Vorrichtung zur Coronabehandlung | |
DE69231293T2 (de) | Verfahren und vorrichtung zur plasmabeschichtung | |
DE69304804D1 (de) | Verfahren und Vorrichtung zur Trockenbeschichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |