JP4674544B2 - 電気光学装置の製造方法 - Google Patents
電気光学装置の製造方法 Download PDFInfo
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- JP4674544B2 JP4674544B2 JP2005376076A JP2005376076A JP4674544B2 JP 4674544 B2 JP4674544 B2 JP 4674544B2 JP 2005376076 A JP2005376076 A JP 2005376076A JP 2005376076 A JP2005376076 A JP 2005376076A JP 4674544 B2 JP4674544 B2 JP 4674544B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000010408 film Substances 0.000 claims description 179
- 239000000758 substrate Substances 0.000 claims description 62
- 239000010410 layer Substances 0.000 claims description 41
- 239000011229 interlayer Substances 0.000 claims description 33
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 48
- 239000003990 capacitor Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 239000005368 silicate glass Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 NSG Chemical compound 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Description
<第1実施形態>
第1実施形態に係る液晶装置について、図1から図5を参照して説明する。
<製造方法>
次に、上述した本実施形態に係る液晶装置の製造方法について、図6から図9を参照して説明する。ここに図6から図9は、本実施形態に係る液晶装置を製造する一連の製造工程を示す工程断面図である。尚、図6から図9では、図5に示した画素部の断面図に対応して示してある。尚、ここでは、本実施形態に係る液晶装置のうち蓄積容量、特に容量線の製造工程を主として説明することとする。
<電子機器>
次に、上述した電気光学装置である液晶装置を各種の電子機器に適用する場合について説明する。
Claims (1)
- 基板上に、互いに交差して延在するデータ線及び走査線と、前記基板上で平面的に見て前記データ線及び走査線に対応して規定される画素毎に配置された画素電極と、前記画素電極に電気的に接続された薄膜トランジスタと、前記薄膜トランジスタよりも上層側に配置されたアモルファス配線とを備えた電気光学装置を製造する電気光学装置の製造方法であって、
前記基板上に前記走査線を形成する工程と、
前記基板上の平面的に見て前記データ線及び走査線の交差に対応する領域に、前記薄膜トランジスタを形成し、該薄膜トランジスタを900℃〜1300℃に加熱する工程と、
前記基板上で平面的に見て前記薄膜トランジスタのチャネル領域に対向する領域を含む領域に且つ前記薄膜トランジスタより上層側であって前記画素電極よりも下層側にアルミニウム膜を形成する工程と、
該アルミニウム膜上にアモルファス膜を積層することにより、前記アルミニウム膜及び前記アモルファス膜を含んでなる前記アモルファス配線を形成する工程と、
前記アモルファス配線に相隣接して上層側に、500℃未満で行う低温プラズマCVD法によって層間絶縁膜を形成する工程と、
前記基板上に前記データ線を形成する工程と、
前記画素毎に前記画素電極を形成する工程と
を含み、
前記層間絶縁膜を形成する工程の後に行われる、前記データ線を形成する工程及び前記画素電極を形成する工程を含む全ての工程は、いずれも500℃未満で行われる
ことを特徴とする電気光学装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005376076A JP4674544B2 (ja) | 2005-12-27 | 2005-12-27 | 電気光学装置の製造方法 |
TW095147187A TW200731544A (en) | 2005-12-27 | 2006-12-15 | Electro-optic device, method for manufacturing the same, and electronic apparatus |
US11/612,231 US7605024B2 (en) | 2005-12-27 | 2006-12-18 | Electro-optic device, method for manufacturing the same, and electronic apparatus |
KR1020060133770A KR20070069054A (ko) | 2005-12-27 | 2006-12-26 | 전기 광학 장치, 그 제조 방법, 및 전자기기 |
CNA2006101714466A CN1991937A (zh) | 2005-12-27 | 2006-12-27 | 电光装置及其制造方法以及电子设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005376076A JP4674544B2 (ja) | 2005-12-27 | 2005-12-27 | 電気光学装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007178650A JP2007178650A (ja) | 2007-07-12 |
JP4674544B2 true JP4674544B2 (ja) | 2011-04-20 |
Family
ID=38192552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005376076A Expired - Fee Related JP4674544B2 (ja) | 2005-12-27 | 2005-12-27 | 電気光学装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7605024B2 (ja) |
JP (1) | JP4674544B2 (ja) |
KR (1) | KR20070069054A (ja) |
CN (1) | CN1991937A (ja) |
TW (1) | TW200731544A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8537435B2 (en) * | 2010-05-19 | 2013-09-17 | Kabushiki Kaisha Toshiba | Image scanning apparatus and image forming apparatus |
JP5720124B2 (ja) * | 2010-06-21 | 2015-05-20 | カシオ計算機株式会社 | 液晶表示素子 |
TWI407230B (zh) * | 2010-07-29 | 2013-09-01 | Au Optronics Corp | 電泳顯示面板及其製造方法 |
TWI557715B (zh) * | 2015-05-14 | 2016-11-11 | 友達光電股份有限公司 | 顯示面板 |
KR102569929B1 (ko) * | 2018-07-02 | 2023-08-24 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01243471A (ja) * | 1988-03-24 | 1989-09-28 | Sony Corp | Mis型トランジスタの製造方法 |
JPH0374875A (ja) * | 1989-08-16 | 1991-03-29 | Sony Corp | 固体撮像装置の製造方法 |
JP2001330856A (ja) * | 2000-03-17 | 2001-11-30 | Seiko Epson Corp | 電気光学装置 |
JP2002072249A (ja) * | 2000-08-28 | 2002-03-12 | Matsushita Electric Ind Co Ltd | 液晶表示素子 |
JP2002156652A (ja) * | 2000-11-17 | 2002-05-31 | Seiko Epson Corp | 電気光学装置及びその製造方法 |
JP2003202598A (ja) * | 2001-10-04 | 2003-07-18 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
JP2004045752A (ja) * | 2002-07-11 | 2004-02-12 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2004170919A (ja) * | 2002-10-31 | 2004-06-17 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2004354969A (ja) * | 2003-05-02 | 2004-12-16 | Seiko Epson Corp | 電気光学装置及び電子機器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5334859A (en) * | 1991-09-05 | 1994-08-02 | Casio Computer Co., Ltd. | Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film |
US5684555A (en) * | 1994-12-19 | 1997-11-04 | Kabushiki Kaisha Toshiba | Liquid crystal display panel |
US5640023A (en) * | 1995-08-31 | 1997-06-17 | Sgs-Thomson Microelectronics, Inc. | Spacer-type thin-film polysilicon transistor for low-power memory devices |
US6009827A (en) * | 1995-12-06 | 2000-01-04 | Applied Materials, Inc. | Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films |
WO1997043689A1 (en) * | 1996-05-15 | 1997-11-20 | Seiko Epson Corporation | Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device |
US6303523B2 (en) * | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
JP2000021983A (ja) * | 1998-07-07 | 2000-01-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
TWI301915B (ja) * | 2000-03-17 | 2008-10-11 | Seiko Epson Corp | |
US20020160305A1 (en) * | 2001-03-08 | 2002-10-31 | Mitsubishi Chemical Corporation | Optical recording medium, method of writing and erasing information using the same, and process of producing the same |
-
2005
- 2005-12-27 JP JP2005376076A patent/JP4674544B2/ja not_active Expired - Fee Related
-
2006
- 2006-12-15 TW TW095147187A patent/TW200731544A/zh unknown
- 2006-12-18 US US11/612,231 patent/US7605024B2/en not_active Expired - Fee Related
- 2006-12-26 KR KR1020060133770A patent/KR20070069054A/ko not_active Application Discontinuation
- 2006-12-27 CN CNA2006101714466A patent/CN1991937A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01243471A (ja) * | 1988-03-24 | 1989-09-28 | Sony Corp | Mis型トランジスタの製造方法 |
JPH0374875A (ja) * | 1989-08-16 | 1991-03-29 | Sony Corp | 固体撮像装置の製造方法 |
JP2001330856A (ja) * | 2000-03-17 | 2001-11-30 | Seiko Epson Corp | 電気光学装置 |
JP2002072249A (ja) * | 2000-08-28 | 2002-03-12 | Matsushita Electric Ind Co Ltd | 液晶表示素子 |
JP2002156652A (ja) * | 2000-11-17 | 2002-05-31 | Seiko Epson Corp | 電気光学装置及びその製造方法 |
JP2003202598A (ja) * | 2001-10-04 | 2003-07-18 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
JP2004045752A (ja) * | 2002-07-11 | 2004-02-12 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2004170919A (ja) * | 2002-10-31 | 2004-06-17 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2004354969A (ja) * | 2003-05-02 | 2004-12-16 | Seiko Epson Corp | 電気光学装置及び電子機器 |
Also Published As
Publication number | Publication date |
---|---|
TW200731544A (en) | 2007-08-16 |
US20070145370A1 (en) | 2007-06-28 |
CN1991937A (zh) | 2007-07-04 |
JP2007178650A (ja) | 2007-07-12 |
KR20070069054A (ko) | 2007-07-02 |
US7605024B2 (en) | 2009-10-20 |
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