TW200731544A - Electro-optic device, method for manufacturing the same, and electronic apparatus - Google Patents

Electro-optic device, method for manufacturing the same, and electronic apparatus

Info

Publication number
TW200731544A
TW200731544A TW095147187A TW95147187A TW200731544A TW 200731544 A TW200731544 A TW 200731544A TW 095147187 A TW095147187 A TW 095147187A TW 95147187 A TW95147187 A TW 95147187A TW 200731544 A TW200731544 A TW 200731544A
Authority
TW
Taiwan
Prior art keywords
substrate
electro
thin film
optic device
film transistors
Prior art date
Application number
TW095147187A
Other languages
English (en)
Inventor
Minoru Moriwaki
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200731544A publication Critical patent/TW200731544A/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
TW095147187A 2005-12-27 2006-12-15 Electro-optic device, method for manufacturing the same, and electronic apparatus TW200731544A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005376076A JP4674544B2 (ja) 2005-12-27 2005-12-27 電気光学装置の製造方法

Publications (1)

Publication Number Publication Date
TW200731544A true TW200731544A (en) 2007-08-16

Family

ID=38192552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095147187A TW200731544A (en) 2005-12-27 2006-12-15 Electro-optic device, method for manufacturing the same, and electronic apparatus

Country Status (5)

Country Link
US (1) US7605024B2 (zh)
JP (1) JP4674544B2 (zh)
KR (1) KR20070069054A (zh)
CN (1) CN1991937A (zh)
TW (1) TW200731544A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407230B (zh) * 2010-07-29 2013-09-01 Au Optronics Corp 電泳顯示面板及其製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8537435B2 (en) * 2010-05-19 2013-09-17 Kabushiki Kaisha Toshiba Image scanning apparatus and image forming apparatus
JP5720124B2 (ja) * 2010-06-21 2015-05-20 カシオ計算機株式会社 液晶表示素子
TWI557715B (zh) * 2015-05-14 2016-11-11 友達光電股份有限公司 顯示面板
KR102569929B1 (ko) * 2018-07-02 2023-08-24 삼성디스플레이 주식회사 디스플레이 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2623659B2 (ja) * 1988-03-24 1997-06-25 ソニー株式会社 Ｍｉｓ型トランジスタの製造方法
JPH0374875A (ja) * 1989-08-16 1991-03-29 Sony Corp 固体撮像装置の製造方法
US5334859A (en) * 1991-09-05 1994-08-02 Casio Computer Co., Ltd. Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film
US5684555A (en) * 1994-12-19 1997-11-04 Kabushiki Kaisha Toshiba Liquid crystal display panel
US5640023A (en) * 1995-08-31 1997-06-17 Sgs-Thomson Microelectronics, Inc. Spacer-type thin-film polysilicon transistor for low-power memory devices
US6009827A (en) * 1995-12-06 2000-01-04 Applied Materials, Inc. Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films
EP1450412A3 (en) * 1996-05-15 2005-03-09 Seiko Epson Corporation Thin film device and method for making
US6303523B2 (en) * 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
JP2000021983A (ja) * 1998-07-07 2000-01-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
TWI301915B (zh) * 2000-03-17 2008-10-11 Seiko Epson Corp
JP3501125B2 (ja) * 2000-03-17 2004-03-02 セイコーエプソン株式会社 電気光学装置
JP2002072249A (ja) * 2000-08-28 2002-03-12 Matsushita Electric Ind Co Ltd 液晶表示素子
JP3873610B2 (ja) * 2000-11-17 2007-01-24 セイコーエプソン株式会社 電気光学装置及びその製造方法並びにプロジェクタ
US20020160305A1 (en) * 2001-03-08 2002-10-31 Mitsubishi Chemical Corporation Optical recording medium, method of writing and erasing information using the same, and process of producing the same
JP4284950B2 (ja) * 2001-10-04 2009-06-24 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP3821067B2 (ja) * 2002-07-11 2006-09-13 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4045226B2 (ja) * 2002-10-31 2008-02-13 セイコーエプソン株式会社 電気光学装置及び電子機器
JP3772888B2 (ja) * 2003-05-02 2006-05-10 セイコーエプソン株式会社 電気光学装置及び電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407230B (zh) * 2010-07-29 2013-09-01 Au Optronics Corp 電泳顯示面板及其製造方法

Also Published As

Publication number Publication date
JP2007178650A (ja) 2007-07-12
JP4674544B2 (ja) 2011-04-20
US7605024B2 (en) 2009-10-20
CN1991937A (zh) 2007-07-04
US20070145370A1 (en) 2007-06-28
KR20070069054A (ko) 2007-07-02

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