DE3854111T2 - Vorrichtung und verfahren zur behandlung mit plasma. - Google Patents

Vorrichtung und verfahren zur behandlung mit plasma.

Info

Publication number
DE3854111T2
DE3854111T2 DE3854111T DE3854111T DE3854111T2 DE 3854111 T2 DE3854111 T2 DE 3854111T2 DE 3854111 T DE3854111 T DE 3854111T DE 3854111 T DE3854111 T DE 3854111T DE 3854111 T2 DE3854111 T2 DE 3854111T2
Authority
DE
Germany
Prior art keywords
plasma
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3854111T
Other languages
English (en)
Other versions
DE3854111D1 (de
Inventor
Seitaro Matsuo
Hiroshi Nishimura
Mikiho Kiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE3854111D1 publication Critical patent/DE3854111D1/de
Application granted granted Critical
Publication of DE3854111T2 publication Critical patent/DE3854111T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
DE3854111T 1987-04-27 1988-04-25 Vorrichtung und verfahren zur behandlung mit plasma. Expired - Lifetime DE3854111T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10378587 1987-04-27
JP63098330A JPH0754759B2 (ja) 1987-04-27 1988-04-22 プラズマ処理方法および装置並びにプラズマ処理装置用モード変換器
PCT/JP1988/000401 WO1988008659A1 (en) 1987-04-27 1988-04-25 Method and apparatus for processing with plasma

Publications (2)

Publication Number Publication Date
DE3854111D1 DE3854111D1 (de) 1995-08-10
DE3854111T2 true DE3854111T2 (de) 1995-11-30

Family

ID=26439522

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854111T Expired - Lifetime DE3854111T2 (de) 1987-04-27 1988-04-25 Vorrichtung und verfahren zur behandlung mit plasma.

Country Status (7)

Country Link
US (1) US5003152A (de)
EP (1) EP0311696B1 (de)
JP (1) JPH0754759B2 (de)
KR (1) KR920003018B1 (de)
CA (1) CA1299773C (de)
DE (1) DE3854111T2 (de)
WO (1) WO1988008659A1 (de)

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US5115167A (en) * 1988-04-05 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Plasma processor
US5153406A (en) * 1989-05-31 1992-10-06 Applied Science And Technology, Inc. Microwave source
US5270616A (en) * 1989-09-25 1993-12-14 Ryohei Itatani Microwave plasma generating apparatus
JPH03110798A (ja) * 1989-09-25 1991-05-10 Ryohei Itaya マイクロ波プラズマ発生装置
DE59009135D1 (de) * 1989-12-23 1995-06-29 Leybold Ag Einrichtung für die Erzeugung eines Plasmas durch Mikrowellen.
JPH0440764U (de) * 1990-08-06 1992-04-07
JP3056772B2 (ja) * 1990-08-20 2000-06-26 株式会社日立製作所 プラズマの制御方法ならびにプラズマ処理方法およびその装置
JP2613313B2 (ja) * 1990-09-26 1997-05-28 株式会社日立製作所 マイクロ波プラズマ処理装置
US5111111A (en) * 1990-09-27 1992-05-05 Consortium For Surface Processing, Inc. Method and apparatus for coupling a microwave source in an electron cyclotron resonance system
US5480533A (en) * 1991-08-09 1996-01-02 Matsushita Electric Industrial Co., Ltd. Microwave plasma source
JPH0567586A (ja) * 1991-09-09 1993-03-19 Nec Corp Ｅｃｒプラズマエツチング装置
US5302803A (en) * 1991-12-23 1994-04-12 Consortium For Surface Processing, Inc. Apparatus and method for uniform microwave plasma processing using TE1101 modes
EP0725164A3 (de) * 1992-01-30 1996-10-09 Hitachi Ltd Verfahren und Vorrichtung zur Plasmaerzeugung und Verfahren zur Bearbeitung eines Halbleiters
WO1994006150A1 (en) * 1992-09-02 1994-03-17 The University Of North Carolina At Chapel Hill Method for plasma processing at high pressures
SG50732A1 (en) 1995-05-19 1998-07-20 Hitachi Ltd Method and apparatus for plasma processing apparatus
US6132550A (en) * 1995-08-11 2000-10-17 Sumitomo Electric Industries, Ltd. Apparatuses for desposition or etching
JP3368159B2 (ja) * 1996-11-20 2003-01-20 東京エレクトロン株式会社 プラズマ処理装置
JPH11102799A (ja) * 1997-09-26 1999-04-13 Mitsubishi Electric Corp プラズマ発生装置
US6016766A (en) * 1997-12-29 2000-01-25 Lam Research Corporation Microwave plasma processor
US6362449B1 (en) 1998-08-12 2002-03-26 Massachusetts Institute Of Technology Very high power microwave-induced plasma
JP3668079B2 (ja) * 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
JP3739637B2 (ja) * 2000-07-27 2006-01-25 アルプス電気株式会社 一次放射器
KR100362602B1 (ko) * 2001-02-26 2002-11-29 학교법인 호서학원 챔버 특성 측정 및 매처 성능 평가를 위한 어댑터
JP5138131B2 (ja) * 2001-03-28 2013-02-06 忠弘 大見 マイクロ波プラズマプロセス装置及びプラズマプロセス制御方法
JP4727057B2 (ja) * 2001-03-28 2011-07-20 忠弘 大見 プラズマ処理装置
DE10156615B4 (de) * 2001-11-17 2004-10-07 Forschungszentrum Karlsruhe Gmbh Einrichtung zur Erzeugung eines örtlich variierbaren Elektron-Zyklotron-Resonanz-Mikrowellen-Niederdruckplasmas
JP4157718B2 (ja) * 2002-04-22 2008-10-01 キヤノンアネルバ株式会社 窒化シリコン膜作製方法及び窒化シリコン膜作製装置
EP1361437A1 (de) * 2002-05-07 2003-11-12 Centre National De La Recherche Scientifique (Cnrs) Ein neuer biologischer Tumormarker und Methoden für die Detektion des krebsartigen oder nicht krebsartigen Phenotyps von Zellen
US7638727B2 (en) * 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7445817B2 (en) * 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
US20060057016A1 (en) * 2002-05-08 2006-03-16 Devendra Kumar Plasma-assisted sintering
US20050233091A1 (en) * 2002-05-08 2005-10-20 Devendra Kumar Plasma-assisted coating
EP1501690B1 (de) * 2002-05-08 2007-11-21 Leonhard Kurz GmbH & Co. KG Verfahren zum dekorieren eines grossen, dreidimensionalen plastikgegenstandes
US20060228497A1 (en) * 2002-05-08 2006-10-12 Satyendra Kumar Plasma-assisted coating
US7497922B2 (en) * 2002-05-08 2009-03-03 Btu International, Inc. Plasma-assisted gas production
US20060233682A1 (en) * 2002-05-08 2006-10-19 Cherian Kuruvilla A Plasma-assisted engine exhaust treatment
US7498066B2 (en) * 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
US7494904B2 (en) * 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
US7432470B2 (en) 2002-05-08 2008-10-07 Btu International, Inc. Surface cleaning and sterilization
US20060237398A1 (en) * 2002-05-08 2006-10-26 Dougherty Mike L Sr Plasma-assisted processing in a manufacturing line
US20060062930A1 (en) * 2002-05-08 2006-03-23 Devendra Kumar Plasma-assisted carburizing
CN1302843C (zh) * 2002-05-08 2007-03-07 达纳公司 等离子体辅助渗碳
US7465362B2 (en) * 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
US7560657B2 (en) * 2002-05-08 2009-07-14 Btu International Inc. Plasma-assisted processing in a manufacturing line
US7189940B2 (en) 2002-12-04 2007-03-13 Btu International Inc. Plasma-assisted melting
JP2004239412A (ja) * 2003-02-07 2004-08-26 Tokai Rubber Ind Ltd 樹脂チューブの接続構造及び樹脂チューブの接続方法
JP4381001B2 (ja) * 2003-02-25 2009-12-09 シャープ株式会社 プラズマプロセス装置
US7528353B2 (en) * 2003-05-20 2009-05-05 Biotage Ab Microwave heating device
WO2006127037A2 (en) * 2004-11-05 2006-11-30 Dana Corporation Atmospheric pressure processing using microwave-generated plasmas
US20060236935A1 (en) * 2005-04-25 2006-10-26 Von Ardenne Anlagentechnik Gmbh Coating installation with coolable diaphragm
JP2010050046A (ja) * 2008-08-25 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置
KR20130041120A (ko) * 2010-07-21 2013-04-24 도쿄엘렉트론가부시키가이샤 층간 절연층 형성 방법 및 반도체 장치
US9282594B2 (en) 2010-12-23 2016-03-08 Eastman Chemical Company Wood heater with enhanced microwave launching system
US9397380B2 (en) * 2011-01-28 2016-07-19 Applied Materials, Inc. Guided wave applicator with non-gaseous dielectric for plasma chamber
AU2022285734A1 (en) * 2021-06-02 2024-01-04 Rimere, Llc Systems and methods of plasma generation with microwaves

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CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
EP0103461B1 (de) * 1982-09-10 1988-11-17 Nippon Telegraph And Telephone Corporation Vorrichtung und Verfahren zum Auftragen mittels Plasma
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JPS61284098A (ja) * 1985-06-07 1986-12-15 住友金属工業株式会社 横磁場型マイクロ波プラズマ発生装置
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JPH0216732A (ja) * 1988-07-05 1990-01-19 Mitsubishi Electric Corp プラズマ反応装置

Also Published As

Publication number Publication date
CA1299773C (en) 1992-04-28
DE3854111D1 (de) 1995-08-10
US5003152A (en) 1991-03-26
EP0311696A1 (de) 1989-04-19
WO1988008659A1 (en) 1988-11-03
EP0311696B1 (de) 1995-07-05
KR890700998A (ko) 1989-04-28
EP0311696A4 (de) 1989-11-27
JPH0754759B2 (ja) 1995-06-07
KR920003018B1 (ko) 1992-04-13
JPH0197399A (ja) 1989-04-14

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Legal Events

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