JP6211168B2 - 薄膜封入−oledに適用する薄型超高度バリア層 - Google Patents
薄膜封入−oledに適用する薄型超高度バリア層 Download PDFInfo
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Description
Claims (13)
- 有機半導体デバイスを覆って形成された非共形有機層と、
前記非共形有機層を覆って形成された第1の無機層であって、金属酸化物、金属窒化物、または金属酸窒化物を含む第1の無機層と、
前記第1の無機層を覆って形成され、1つまたは複数の酸化物層または窒化物層を備え、各酸化物層または窒化物層が金属を含む、第1のALD(原子層堆積)層であって、各酸化物層または窒化物層の前記金属が、Al、Hf、Ti、Zr、およびSiからなるグループから個々に選択される、第1のALD層と、
前記第1のALD層を覆って形成された第2の有機層であって、金属または金属酸化物を含有するナノ粒子を内蔵する第2の有機層と、
前記第2の有機層上に形成された第2のALD層であって、1つまたは複数の酸化物層を含み、各酸化物層が、Al、Hf、Ti、Zr、およびSiからなるグループから選択される金属を含む、第2のALD層と
を備える薄型多層バリア構造。 - 有機半導体デバイスを覆って形成された非共形有機層と、
前記非共形有機層を覆って形成された第1の無機層であって、金属酸化物、金属窒化物、または金属酸窒化物を含む第1の無機層と、
前記第1の無機層上に形成され、1つまたは複数の酸化物層を備える第1のALD(原子層堆積)層であって、各酸化物層が、Al、Hf、Ti、Zr、およびSiからなるグループから個々に選択される、金属を含む、第1のALD層と、
前記第1のALD層上に形成された第2の無機層であって、金属酸化物、金属窒化物、または金属酸窒化物を含む第2の無機層と、
前記第2の無機層上に形成された第2のALD層であって、1つまたは複数の酸化物層を含み、各酸化物層が、Al、Hf、Ti、Zr、およびSiからなるグループから選択される金属を含む、第2のALD層と
を備える薄型多層バリア構造。 - 前記第1及び第2の無機層が、酸窒化ケイ素(SiON)、酸化ケイ素(SiO)、炭化ケイ素(SiC)、またはそれらの組合せを含む、請求項1または2に記載の薄型多層バリア構造。
- 前記第1及び第2のALD層が、酸化アルミニウム(Al2O3)、酸化ハフニウムボロン(HfBO)、2酸化ハフニウム(HfO2)、2酸化チタン(TiO2)、2酸化ジルコニウム(ZrO2)、酸化ケイ素(SiO2)、またはそれらの組合せを含む、請求項1または2に記載の薄型多層バリア構造。
- 前記第2のALD層上に形成された第3の無機層であって、金属酸化物、金属窒化物、または金属酸窒化物を含む第3の無機層をさらに備える、請求項2に記載の薄型多層バリア構造。
- 前記第1及び第2の無機層が90%を超える光透過率を有する、請求項1または2に記載の薄型多層バリア構造。
- 前記第1及び第2のALD層が2つ以上の酸化物層または窒化物層を備えたナノ薄層スタックである、請求項1に記載の薄型多層バリア構造。
- 薄型多層バリア構造を堆積する方法であって、
基板の露出面上に有機半導体デバイスを形成することと、
プラズマ化学気相堆積(PECVD)を使用して、前記有機半導体デバイスがその上に形成された前記基板を覆って、無機層を堆積することと、
原子層堆積によって、前記無機層を覆って、1つまたは複数の金属酸化物または金属窒化物を備える金属層を堆積することであり、前記金属酸化物層または金属窒化物層のそれぞれが金属を含み、前記金属が、ハフニウム、チタン、ジルコニウム、シリコン、またはそれらの組合せからなるグループから選択される、金属層を堆積することと、
前記金属層、および前記基板の表面を覆って第2の有機層であって、金属または金属酸化物を含有するナノ粒子を内蔵する第2の有機層を堆積することと
を含み、
前記無機層が、金属酸化物、金属窒化物、または金属酸窒化物を含有する、方法。 - 薄型多層バリア構造を堆積する方法であって、
基板の露出面上に有機半導体デバイスを形成することと、
プラズマ化学気相堆積(PECVD)を使用して、前記有機半導体デバイスがその上に形成された前記基板を覆って、第1の無機層を堆積することと、
原子層堆積によって、前記第1の無機層上に、1つまたは複数の金属酸化物層を備える金属層を堆積することであり、各金属酸化物層が、前記金属が、ハフニウム、チタン、ジルコニウム、シリコン、またはそれらの組合せからなるグループから選択される金属を含む、金属層を堆積することと、
前記金属層、および前記基板の表面上に、第2の無機層を堆積することと
を含み、
前記第1及び第2の無機層が、金属酸化物、金属窒化物、または金属酸窒化物を含有する、方法。 - 前記有機半導体デバイスが、スピンコータに依らずに形成される、請求項8または9に記載の方法。
- 前記第1の無機層と前記第1のALD層の間に形成される第2の有機層を更に含み、前記第2の有機層はカーボン含有材またはポリマータイプの有機材を含有する、請求項2に記載の薄型多層バリア構造。
- 前記第2の有機層上に第2の金属層を形成することをさらに含み、前記第2の金属層は、1または複数の酸化物層を含み、各酸化物層は、Al、Hf、Ti、Zr、およびSiからなるグループから選択される金属を含む、請求項8に記載の方法。
- 前記金属層と前記第2の無機層の間に有機層を形成することを更に含み、前記有機層はカーボン含有材またはポリマータイプの有機材を含有する、請求項9に記載の方法。
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PCT/US2014/022765 WO2014159267A1 (en) | 2013-03-14 | 2014-03-10 | Thin film encapsulation - thin ultra high barrier layer for oled application |
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CN105027316B (zh) | 2018-07-17 |
TWI604647B (zh) | 2017-11-01 |
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KR101701257B1 (ko) | 2017-02-01 |
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JP2017224614A (ja) | 2017-12-21 |
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