TWI388078B - 電子組件之製造方法及電子組件 - Google Patents
電子組件之製造方法及電子組件 Download PDFInfo
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- TWI388078B TWI388078B TW098102838A TW98102838A TWI388078B TW I388078 B TWI388078 B TW I388078B TW 098102838 A TW098102838 A TW 098102838A TW 98102838 A TW98102838 A TW 98102838A TW I388078 B TWI388078 B TW I388078B
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/54—Apparatus specially adapted for continuous coating
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
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Description
本發明涉及一種電子組件的製造方法及電子組件。
本專利申請案主張德國專利申請案10 2008 006 721.0、10 2008 019 900.1、10 2008 031 405.6和10 2008 048 472.5之優先權,其已揭示的整個內容在此一併作為參考。
為了對電子組件(例如,無機發光二極體(LEDs)或有機發光二極體(OLEDs))持續地進行操作,通常需要保護這些電子組件使不受濕氣所影響。特別是需要使這些電子組件受到廣泛的壽命測試,以確保其在平常使用時可常年地保持其功能。
本發明的至少一實施形式的目的是提供一種具有包封之電子組件的製造方法。此外,至少一實施形式的目的是提供一種具有包封之電子組件。
上述目的藉由申請專利範圍獨立項之方法和物件來達成。本發明之方法和物件之有利的實施形式和其它形式描述在申請專利範圍各附屬項中且另外由以下的描述和圖式即可明白。
依據一實施形式,一種具有位障層之電子組件之製造方法特別是包括以下各步驟:
-製備一具有至少一功能層之基板,
-藉由電漿促進之原子層沈積(PEALD)而在該功能層上施加至少一第一位障層,以及
-藉由電漿促進之化學氣相沈積(PECVD)而在該功能層上施加至少一第二位障層。
所謂第一層或第一元件在第二層或第二元件”上”或”之上”或配置在-或施加在另二個層或元件”之間”此處以及以下是指,第一層或第一元件直接配置在第二層或第二元件上或配置在另二層或元件上而形成直接機械-及/或電性接觸。此外,直接接觸亦可以表示:另一層及/或元件配置在第一層或第一元件和第二層或第二元件之間、或配置在另二層或元件之間。
化學氣相沈積是一種方法,其中在具有至少一功能層之已製備完成的基板之至少一表面上至少二種氣體形式的原始化合物發生反應而成為一固定的反應產物。此處,至少二種氣體形式的原始化合物同時供應至一已提供有該基板之體積中。此外,具有至少一功能層之已製備完成的基板之至少一表面須加熱至一種大於室溫的溫度。
電漿促進的化學氣相沈積(PECVD)是一種CVD-方法,其中在體積中產生一種電漿,使供應至該體積之至少二種氣體形式的原始化合物在該電漿中被激發。於是,至少一表面被加熱時所須達到的溫度在與無電漿的CVD-方法比較時可較低。這特別是有利的,此乃因該至少一功能層在大於一最大溫度的溫度時會不可逆地受損。該最大溫度例如可以大約是120℃,使第二位障層所達到的溫度小於120℃且較佳是小於或等於80℃。
一種原子層沈積是一種方法,其中在與CVD-方法比較時首先將至少二種氣體形式的原始化合物之第一原始化合物供應至製備有該基板的體積中且在至少一表面上被吸收。在以該第一原始化合物來較佳是完全地-或幾乎是完全地覆蓋該至少一表面之後,該第一原始化合物之仍然是氣體形式的部份及/或在該表面上未被吸收的部份又由該體積中被去除,且可將該至少二種原始化合物之第二原始化合物供應至該體積中。第二原始化合物可與該至少一表面上所吸收的第一原始化合物發生反應而形成一種固體層。就像在CVD-方法中一樣,當該至少一表面加熱至一種大於室溫的溫度時是有利的。
一種電漿促進的原子層沈積(PEALD)可以是一種ALD-方法,其中在供應該第二原始化合物時同時產生一種電漿,這樣可在PECVD-方法中激發該第二原始化合物。於是,在與無電漿之ALD-方法比較時,該至少一表面加熱時須達到的溫度可較低。第一位障層例如可在溫度小於120℃時且較佳是小於或等於80℃時施加而成。為了產生另一固定層,則須使第一原始氣體之供應步驟且隨後供應第二原始氣體的步驟重複。
在與習知的具有位障層(其都由CVD-方法製成)的包封相比較時,此處所述方法中可製成的包封相對於濕氣及/或氧而言具有一種較小的透過性。在具有位障層(其都由CVD-方法製成)的包封中,會發生通道、通孔及/或顆粒邊界,其會造成傳統的包封之不密封性。此種不密封性特別是由於電子組件中不可超過位障層之可到達的最大溫度(如上所述,大約是120℃且較佳是大約80℃)而較有利。於是,具有以CVD-施加而成的位障層之傳統式包封需要很複雜-且因此成本較昂貴的多層系統,其對具有包封的電子組件之經濟的製程會造成防礙。
傳統式包封的缺點可藉由此處所述的方法來避免。藉由PEALD-方法來施加第一位障層,則第一位障層在與藉由CVD-或PECVD-方法施加而成的位障層相比較時能以較高的密度來製成且可使通道及/或通孔之形成及/或繼續延伸性變小或不會發生。因此,在與藉由CVD-方法所製成的層比較時,第一位障層亦可對濕氣及/或氧而達成一種較高的密封性。於是,在與藉由傳統CVD-方法製成的具有包封的位障層相比較下,位障層的數目及/或其厚度都可較小。因此,薄的包封在同時具有高的固有密度時可像大面積一樣地產生在小面積上,且濕氣及/或氧的擴散可藉由顆粒邊界、通道及/或通孔而變小或不會發生。此外,此處所述之具有第一和第二位障層之包封亦可在該包封的邊緣區域中具有高的密封性,使濕氣及/或氧經由該包封和已製備的基板之間的界面之擴散可藉由至少一功能層而變小或受到阻止。
其它藉由覆蓋玻璃來達成之習知的包封中另外有一種吸氣材料施加在空腔中,相較於此種包封而言,此處所述之具有第一和第二位障層之包封可成本較有利地被製成且具有較小的厚度。又,以此處所述的方法亦可製成一種具有透明包封之電子組件,這在藉由一種覆蓋玻璃和吸氣材料來製成該包封的情況下是不可能的。
施加第一位障層和第二位障層之步驟可依順序直接在相同的體積(例如,傳統之塗層設備)中進行。
第一位障層可藉由PEALD-方法例如以大於或等於10奈米且小於或等於30奈米之厚度施加而成。這表示:藉由PEALD-方法可製成多於或等於10個單層且小於或等於50個單層之第一位障層。由於第一位障層之高的密度和品質,則此種厚度即已足夠確保:可有效地保護第一位障層下方之至少一功能層不受濕氣及/或氧所影響。相較於PECVD-方法而言,雖然PEALD-方法可具有一種較小的生長速率,但由於第一位障層之厚度較小而可確保此處所述的方法之處理時間較短且因此有較高的經濟效益。
由於第一位障層之高的密封性,則對第二位障層之密封性的需求小於對具有位障層之傳統式包封的需求。特別是第二位障層能以較第一位障層的生長速率還高的生長速率施加而成且在施加完成之後具有一種大於或等於1奈米且小於或等於1000奈米之厚度。特別是第一位障層可施加成具有大於或等於10奈米,較佳是大於或等於20奈米且特別是大於或等於100奈米之厚度。
上述方法可具有另一步驟,其中一保護層施加在第一和第二位障層上。於此,該保護層直接施加在第一或第二位障層上且因此在施加之後是與第一或第二位障層直接相接觸。特別是該保護層可對其下方之第一和第二位障層達成機械上的保護作用。
該保護層可施加成具有大於或等於1微米且小於或等於100微米之厚度。特別是該保護層之厚度可大於或等於5微米且較佳是大於或等於10微米。
於此,該保護層可具有塑料,例如,矽氧烷、環氧化物、丙烯酸酯(例如,甲基丙烯酸甲酯)、醯亞胺、碳酸酯、烯烴、苯乙烯、胺基甲酸酯或其單體形式的衍生物、寡聚物或聚合物且亦可另外具有混合物、共聚物或其化合物。例如,該保護層可具有一種環氧樹脂、聚甲基丙烯酸甲酯(PMMA)、聚苯乙烯、聚碳酸酯、聚丙烯酸酯、聚胺基甲酸酯或矽酮樹脂(例如,聚矽氧烷或其混合物)。該保護層因此可透光。
該保護層亦可另外具有一種噴漆或以噴漆來形成,其包括至少一種上述的材料且例如藉由直通式噴漆設備施加而成。此外,該噴漆可以是一種可紫外線硬化-及/或含有結合劑-或溶劑之噴漆。
可藉由此處所述方法來製成的電子組件可形成發出輻射及/或接收輻射的組件且因此亦可形成有機-或無機電子組件,其大致上是無機發光二極體(LED)、有機發光二極體(OLED)、無機光二極體(PD)、有機光二極體(OPD)、無機太陽電池(SC)、有機太陽電池(OSC)、無機電晶體、特別是無機薄膜電晶體(TFT)、有機電晶體(OTFT)、或積體電路(IC)。此外,可藉由此處所述的方法製成的電子組件可具有多種上述的元件或其組合或由這些元件所形成。
上述電子組件在製成之後可另外具有一種具有至少一第一和一第二電極的功能層序列。此二個電極之間配置至少一功能層,其包括一個或多個無機及/或有機功能層。特別是該功能層序列可配置在基板上。
若該電子組件例如具有一種LED、OLED、PD、OPD、SC及/或OSC,則該功能層序列可具有一活性區,其適合用來在該電子組件操作時產生或偵測出電磁輻射。
在一特別有利的實施形式中,以此處所述的方法將該電子組件製作成有機電子組件,其包括發出輻射的有機組件且具有發出輻射的層序列。此發出輻射的層序列可包括以有機功能層來形成的功能層。特別是該電子組件可包括一種發出輻射之有機二極體(OLED)或由其所形成。該電子組件因此可具有一活性區,其適合用來在該電子組件操作時藉由電子和電洞的組合而發出電磁輻射。
發出輻射的有機層序列或OLED例如可在基板上具有第一電極。在第一電極上可施加由有機材料構成的至少一個有機功能層或多個有機功能層。該至少一個有機功能層或多個有機功能層例如可具有電子輸送層、電致發光層及/或電洞輸送層或由這些層所構成。在該有機功能層或多個有機功能層上可施加一第二電極。
例如,該基板可包括玻璃、石英、塑料箔、金屬、金屬箔、矽晶圓或其它適當的基板材料。若該OLED以所謂”底部-射極”來構成,即,在該活性區中所產生的輻射經由該基板而發出,則該基板對第一輻射之至少一部份可具有一種透過率。
在底部-射極組態中,第一電極亦可有利地對主輻射之至少一部份具有一種透過率。透明之第一電極可構成陽極且因此可作為注入電洞用的材料。此透明的第一電極例如可具有一種透明的導電氧化物(TCOs)或由透明的導電氧化物所構成。透明的導電氧化物(ITO)是透明的導電材料,其通常是金屬氧化物,例如,氧化鋅、氧化錫、氧化鎘、氧化鈦、氧化銦或特別佳時是氧化銦錫(ITO)。二元的金屬氧化物包括ZnO,SnO2
,In2
O3
,三元的金屬氧化物包括Zn2
SnO4
,CdSnO3
,ZnSnO3
,MgIn2
O4
,GaInO3
,Zn2
In2
O5
或In4
Sn3
O12
、或不同的透明之導電氧化物之混合物,這些都屬於TCOs之族群。TCOs在化學計量上未必對應於此種組成而是亦可被p-或n-摻雜。
有機功能層或多個有機功能層可具備有機聚合物、有機寡聚物、有機單體、有機小分子、非聚合物分子或上述材料的組合。特別是當發出輻射的有機層序列具有一以電洞輸送層構成的功能層時是有利的,以便有效地將電洞注入至電致發光層中或電致發光區中。作為電洞輸送層的材料,例如,三級胺、咔唑衍生物、可導電之聚苯胺或聚伸乙二氧基噻吩已顯示是有利的。此外,當功能層以電致發光層來構成時是有利的。作為功能層的材料,具有由於螢光或磷光而造成的輻射發射性的材料是適當的,這些材料例如可以是:聚茀、聚噻吩、聚苯或其衍生物、化合物、混合物或共聚物。依據各功能層中的材料,所產生的第一輻射可分別具有由紫外線至紅色光譜區之波長或範圍或這些波長或範圍所形成的組合。
第二電極可作為陰極且因此作為注入電子用的材料。作為陰極材料,已顯示有利的材料特別是鋁,鋇,銦、銀,金,鎂,鉀或鋰以及其化合物、組合或合金。另一方式是,第二電極亦可具有上述TCOs之一。此外,第二電極可具有透光性及/或第一電極可作為陰極且第二電極可作為陽極。即,OLED特別是亦能以“頂部(Top)-射極”形式來構成。
第一及/或第二電極可分別以大面積形式來形成。於是,在OLED之情況下可使活性區中所產生的電磁輻射以大面積方式發出。“大面積”此處是指,電子組件具有一種大於或等於數平方毫米之面積,較佳是大於或等於數平方厘米,特別佳是大於或等於數平方公寸。另一方式是,第一及/或第二電極至少形成在一些部份區域中且被結構化。該活性區中所產生的電磁輻射因此可結構化地被發出,此種結構化大致上是像素或象形文字的形式。
此外,須形成上述的電子組件,使具有至少一有機功能層之基板可包括光偵測器及/或電晶體或由光偵測器及/或電晶體所構成。
又,可以有機電子組件來製成該電子組件,其包括有機太陽電池或光二極體。該電子組件可具有一以有機功能層來形成的功能層,其具有上述OLED所提到之功能層之特徵。此外,包括太陽電池或光二極體之電子組件可具有多個電極,其具有上述OLED所提到之電極之特徵。
又,該電子組件可以無機電子組件來形成,其例如包括一種LED,PD,SC及/或TFT。該至少一功能層可具有一種磊晶層序列,即,磊晶生長之半導體層序列或由其所構成。此半導體層序列特別是可具有以InGaAlN,InGaAlP及/或AlGAs為主之III-V-化合物半導體及/或具有元素鋇、鎂、鈣和鍶中的一種或多種以及元素O、S和Se中的一種或多種之II-VI-化合物半導體材料。例如,ZnO,ZnMgO,CdS,ZnCdS和MgBeO屬於II-VI-化合物半導體材料。此外,無機電子組件可具有多個電極,其具有上述OLED所述電極之特徵。
第一位障層可在第二位障層之前施加在該至少一功能層上。於是,藉由第一位障層可製備一種高密度之均勻地覆蓋該功能層之表面,其上隨即可施加第二位障層。藉由第一位障層之優異的表面特性,則可使第二位障層之傾斜度、擴散通道、顆粒邊界及/或通孔變小。
特別是第一位障層直接施加在上述第二電極上或該發出輻射或接收輻射之層序列上。藉由PEALD-方法來進行該施加過程,則第一位障層可以均勻的厚度且以整面覆蓋的方式而施加在該具有至少一功能層或功能層序列之基板上。於是,在該功能層或功能層序列和該包封之間就不需一種整平層。
另一方式是,在施加第一位障層之前施加第二位障層。這亦是有利的,此乃因在施加第二位障層時會造成顆粒邊界、通道及/或通孔,其可藉由高密度的第二位障層來密封。
第一位障層和第二位障層可分別具有一種材料,其適合用來保護該至少一功能層使不受環境(例如,氧及/或濕氣)之有害性的影響。例如,可施加氧化物、氮化物或結晶形式或玻璃形式的氧化氮化物以作為第一位障層及/或第二位障層。此外,亦可包括鋁、矽、錫、鋅、鈦、鋯、鉭、鈮或鉿。第一及/或第二位障層可具有介電質特性或導電性且例如可具有氧化矽(SiOx
),例如SiO2
,氮化矽(Six
Ny
),例如Si2
N3
,氮氧化矽,氧化鋁(Al2
O3
),氮化鋁,氧化錫,氧化銦錫,氧化鋅或氧化鋅鋁。
為了製造第一位障層,在上述PEALD-方法中例如可使用一種金屬有機-或半金屬有機化合物以作為第一原始化合物。第二原始化合物產生於電漿中,可提供一種含氧-及/或含氮之化合物以作為第二原始化合物。若第一位障層包括例如Al2
O3
,則可使用三甲基鋁以作為第一原始化合物,且使用N2
O以作為第二原始化合物。
第二位障層可另外具有一種由不同材料的至少二層所構成的層序列。這表示:可施加一種具有至少二種不同的層之層序列以作為第二位障層。例如,此層序列可具有一種具有氧化物的層和一種具有氮化物之層。此層序列亦可具有第一材料(例如,氮化物)所形成之多個第一層及/或第二材料(例如,氧化物)所形成之多個第二層,此二種層交替地施加而成。若含有氮化物之第一層稱為“N”且含有氧化物之第二層稱為“O”,則此層序列例如能以順序NON或NONON或亦能以順序ONO或ONONO來形成。
此外,在至少一第一位障層及/或至少一第二位障層上可施加另一第一位障層及/或另一第二位障層。因此,在具有至少一有機功能層之基板上可施加多個第一位障層及/或多個第二位障層。第一位障層和第二位障層較佳是可交替地施加而成。
該另一第一位障層或該另一第二位障層可具有至少一個或多個特徵,其是與該至少一第一位障層或該至少一第二位障層有關。特別是每一個另一第一位障層可藉由PEALD-方法施加而成,每一個另一第二位障層可藉由PECVD-方法施加而成。
依據另一實施形式,藉由此處所述的方法可製成電子組件。此電子組件特別是可具有一包括至少一功能層的基板,該功能層上具有至少一第一位障層和至少一第二位障層。該至少一第一位障層和至少一第二位障層可分別具有一個或多個上述特徵。此電子組件之特徵是小的厚度且同時該包封具有高的密封性,其能以較高的經濟性來製成。
本發明之其它優點和有利的實施形式以下將參考第1A至5圖來說明。
各圖式和實施例中相同-或作用相同的各組件分別設有相同的參考符號。所示的各元件和各元件之間的比例未必依比例繪出。反之,為了清楚及/或易於理解之故,各圖式的一些元件,例如,層、構件、組件和區域,已予放大地顯示出。
以下的圖式中,純粹舉出一些用來製造電子組件之實施例以及該些電子組件之實施例,其構成包括一OLED的有機電子組件。此處須指出:以下所述的方法、組件和特徵亦適用於其它在一般部份中所描述的電子組件。
第1A至1C圖中顯示本發明一實施例之有機電子組件之製造方法。
在第1A圖之第一步驟中,製備一具有一有機功能層22之基板1。此有機功能層22是有機層序列2之一部份且施加在第一電極21和第二電極23之間。具備該有機功能層序列2之基板1形成有機發光二極體(OLED)且可具有像上述一般部份中所述之其它功能層(未顯示)。第一和第二電極21,23之電性接觸是經由導電軌來達成,為了清楚之故,各導電軌未顯示出。
具有該有機功能層序列2之基板1構成一種底部-射極且具有一由玻璃構成的透明基板1和一由ITO構成的透明之第一電極,其形成陽極。第二電極23具有反射性、形成陰極且具有鋁。
在第1B圖所示的下一步驟中,藉由PEALD-方法而在該有機功能層22上且特別是在層序列2上施加一由Al2
O3
構成的第一位障層3。具有該有機層層序列2之基板1在塗層設備中加熱至一種小於100℃且較佳是小於80℃之溫度且在第一步驟中施加三甲基鋁,使三甲基鋁在由該層序列2和基板1所形成的表面上可被吸收。例如,在基板1至該有機電子組件之稍後的電性接觸所形成的接觸區上為了防止第一原始化合物被吸收,則例如可使用一覆蓋該接觸區之光罩層,其在施加第一位障層之後又去除。在三甲基鋁之未被吸收的成份被去除之後,在PEALD-之第二步驟中該具有層序列2之基板1上施加一種具有N2
O(作為第二原始化合物)之電漿。此N2
O可與基板1和層序列2上所吸收的三甲基鋁反應成一種Al2
O3
-層,其厚度是在小於1奈米至數奈米之範圍中,但此Al2
O3
-層較佳是以單層來形成。PEALD-方法之第一和第二步驟繼續重複進行,直至10至30奈米厚的第一位障層3製成為止。
藉由PEALD-方法,則可製成高密度之第一位障層3,其特徵是優異的晶體結構且在與藉由CVD-方法生長而成的層相比較時未具有或幾乎未具有通孔及/或通道。此外,這樣所製成的第一位障層3在該包封之邊緣區域中可在位障層3和例如基板1之間形成高密度的界面,這樣可使氧及/或濕氣不會沿著該界面形成可能的穿透路徑。
在第1C圖的下一步驟中,藉由PECVD-方法而在第一位障層3上施加一由SiO2
構成的位障層4。第二位障層4之厚度是大約100奈米至1000奈米且是在與第一位障層3相同的溫度中施加而成。由於高密度的第一位障層3,則第二位障層4可以較高的生長速率施加而成,以使該有機層序列2達成一固有的緊密的包封。
因此,在一經濟的方法中整體上可在短的處理時間中達成一高密度的包封。
PEALD-方法和PECVD-方法可在相同的塗層設備中進行,以便在製造該具有第一位障層3和第二位障層4之包封時在由PEALD-方法切換至PECVD-方法的過程中不會由於塗層設備之裝載和去載而造成額外的停機時間。
另一方式是,除了此處所述的材料以外,第一及/或第二位障層3,4亦可具有氧化物、氮化物及/或氧化氮化物,其具有半金屬及/或金屬。除了上述方法以外,第二位障層4亦可在第一位障層3之前施加在基板和具有該有機功能層22之有機層序列2上。
或是,第二電極可具有透光性,使該有機電子組件可製成頂部-射極或透明的OLED。或是,該層序列2例如亦可包括有機電晶體及/或有機光二極體或由其構成。
第2圖顯示有機電子組件之一實施例,其藉由一種方法來製成,此方法在與先前的方法比較時具有另一步驟。
在上述施加第一和第二位障層3,4之後,另外施加一保護層5,其包括一噴漆,此噴漆例如可以是一種含有溶劑之漆,其在一種直通式噴漆設備中施加成具有10至100微米的厚度。藉由此一保護層5,則該有機電子組件且特別是第一和第二位障層3,4可有效地對抗刮傷和其它機械上的損害而受到保護。
另一方式是,該保護層5例如亦可以聚合物(例如,矽酮樹脂或環氧樹脂)施加而成。
以下的圖式中顯示另一實施例之有機電子組件之一部份,其是先前實施例的各種修改或變化後的形式。以下的描述主要是針對與先前的實施例不同之處。
第3圖顯示一有機電子組件之一部份,其中就像先前實施例一樣在層序列2上施加一種由Al2
O3
構成之高密度的第一位障層3,其上藉由PECVD-方法施加一第二位障層4,其具有三個層41,42,43且總厚度是100至1000奈米。各層41和43以氮化矽層來形成,該層42以氧化矽層來形成。另一方式是,層41,43和層42之材料亦可互換。此外,第二位障層4例如亦可具有一種具有五層之層序列,其交替地以氧化矽層和氮化矽層來形成。
除了上述的實施例以外,第一位障層3亦可施加在具有這些層41,42,43之第二位障層4上。
第4,5圖中顯示有機電子組件之一部份,其具有多個第一位障層3,3’,3’’或3,3’,3’’,3’’’以及多個第二位障層4,4’,4’’,其藉由PEALD-方法或PECVD-方法交替地施加而成。由於不排除層序列2之第二電極及/或第二位障層4,4’,4’’的至少一部份具有例如縱向生長、通道、通孔及/或顆粒邊界形式的缺陷,則可藉由該層序列2和第二位障層4,4’,4’’之間的第一位障層3,3’,3’’來確保:此種缺陷可有效地被中斷。特別是第二位障層4,4’,4’’中所產生的通道及/或通孔可藉由其上的第一位障層3’,3’’或3’,3’’,3’’’來密封。
此外,至少一個第二位障層4,4’,4’’可具有多個如第3圖之實施例所述的層。
本發明當然不限於依據各實施例中所作的描述。反之,本發明包含每一新的特徵和各特徵的每一種組合,特別是包含各申請專利範圍-或不同實施例之各別特徵之每一種組合,當相關的特徵或相關的組合本身未明顯地顯示在各申請專利範圍中或各實施例中時亦屬本發明。
1...基板
2...有機層序列
21...第一電極
22...有機功能層
23...第二電極
3,3’,3’’,3’’’...第一位障層
4,4’,4’’...第二位障層
41,42,43...第二位障層之層
5...保護層
第1A至1C圖本發明之一實施例之方法的圖解。
第2圖有機電子組件之圖解,其可藉由另一實施例的方法來製成。
第3至5圖可藉由其它實施例之方法來製成的電子組件之一部份的圖解。
1...基板
2...有機層序列
3...第一位障層
4...第二位障層
Claims (16)
- 一種電子組件之製造方法,該電子組件包括多個位障層以包封該電子組件,該製造方法具有以下步驟:-製備基板(1),其具有至少一個功能層(22),-藉由電漿促進之原子層沈積(PEALD)而在該功能層(22)上施加至少一個第一位障層(3),-藉由電漿促進之化學氣相沈積(PECVD)而在該功能層(22)上施加至少一個第二位障層(4),-在該第一和第二位障層(3,4)上施加保護層(5),其中該保護層具有塑料(plastic)。
- 如申請專利範圍第1項之製造方法,其中該保護層具有大於或等於5微米之厚度。
- 如申請專利範圍第2項之製造方法,其中該保護層具有大於或等於10微米的厚度。
- 如申請專利範圍第1項之製造方法,其中該保護層(5)具有噴漆。
- 如申請專利範圍第1項之製造方法,其中:-在製備該具有至少一個功能層(22)之基板(1)時,在該基板(1)上施加第一電極(21)且在該至少一個功能層(22)上施加第二電極(23),-該功能層(22)包括有機功能層,及-在該第二電極(23)上施加第一位障層(3)。
- 如申請專利範圍第1項之製造方法,其中第一位障層(3)及/或第二位障層(4)包括氧化物、氮化物或氧氮化物。
- 如申請專利範圍第1項之製造方法,其中施加由至少二個具有不同材料之層(41,42)所構成的層序列以作為第二位障層(4)。
- 如申請專利範圍第7項之製造方法,其中該至少二個具有不同材料之層(41,42)包括具有氧化物之層和具有氮化物之層。
- 如申請專利範圍第1項之製造方法,其中施加至少一個另外的第一位障層(3’)及/或至少一個另外的第二位障層(4’)。
- 如申請專利範圍第8項之製造方法,其中該第一位障層及第二位障層(3,3’,4,4’)交替地施加。
- 如申請專利範圍第1項之製造方法,其中在第一位障層(3)之前施加第二位障層(4)。
- 如申請專利範圍第1項之製造方法,其中該至少一個第一位障層(3)及該至少一個第二位障層(4)在小於120℃之溫度中施加而成。
- 如申請專利範圍第1項之製造方法,其中該至少一個第一位障層(3)具有等於或大於10奈米且小於或等於30奈米之厚度。
- 如申請專利範圍第1項之製造方法,其中該至少一個第二位障層(4)具有等於或大於100奈米且小於或等於1000奈米之厚度。
- 如申請專利範圍第1項之製造方法,其中該電子組件包括發光的有機二極體(OLED)及/或太陽電池。
- 一種有機光電組件,其係藉由如申請專利範圍第1至15 項中任一項所述之製造方法來製成。
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