CN108448006B - 封装结构、电子装置以及封装方法 - Google Patents
封装结构、电子装置以及封装方法 Download PDFInfo
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- CN108448006B CN108448006B CN201810270158.9A CN201810270158A CN108448006B CN 108448006 B CN108448006 B CN 108448006B CN 201810270158 A CN201810270158 A CN 201810270158A CN 108448006 B CN108448006 B CN 108448006B
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
一种封装结构、电子装置以及封装方法,该封装结构包括无机层、铝碳层和有机层。铝碳层位于所述无机层上且与所述无机层接触;有机层位于所述铝碳层上且与所述铝碳层接触。在该封装结构中,铝碳层能够提高无机层和有机层之间的结合强度,防止封装结构发生分层翘曲,并且,无机层能够更好地通过铝碳层和有机层释放其由于弯曲变形所产生的应力,从而改善或防止无机层产生裂隙,达到更好的封装效果。
Description
技术领域
本公开至少一实施例涉及一种封装结构、电子装置以及封装方法。
背景技术
有些电子器件(例如OLED器件)对抗水汽和氧气的能力较差,如果暴露在水汽或氧气中,这些电子器件的寿命会减小。对于电子器件的封装,目前较为前沿的封装技术是薄膜封装技术。例如,可以采用多个无机封装层相互叠加的方式形成封装薄膜,也可以采用无机封装层和有机封装层相互叠加的方式形成封装薄膜。
发明内容
本公开至少一实施例提供一种封装结构,该封装结构包括无机层、铝碳层和有机层。铝碳层位于所述无机层上且与所述无机层接触;有机层位于所述铝碳层上且与所述铝碳层接触。
例如,本公开一实施例提供的封装结构中,所述铝碳层包括(R((CH2)mO)n)3Al,m和n为正整数,R为烷基或苯基,m=2,n=1~6。
例如,本公开一实施例提供的封装结构中,所述无机层包括第一无机层和位于所述第一无机层上的铝金属层,所述铝碳层位于所述铝金属层上且与所述铝金属层接触。
例如,本公开一实施例提供的封装结构中,所述无机层包括氧化铝。
例如,本公开一实施例提供的封装结构中,所述无机层还包括第二无机层,该第二无机层位于所述第一无机层的远离所述铝碳层的一侧。
本公开至少一实施例还提供一种电子装置,该电子装置包括本公开实施例提供的任意一种封装结构。
本公开至少一实施例还提供一种封装方法,该方法包括:形成无机层;形成铝碳层,所述铝碳层位于所述无机层上且与所述无机层接触;以及形成有机层,有机层位于所述铝碳层上且与所述铝碳层接触。
例如,本公开一实施例提供的封装方法中,在形成所述无机层之后,所述方法包括:形成铝膜,所述铝膜位于所述无机层上且与所述无机层接触;形成有机材料层,所述有机材料层位于所述铝膜上且与所述铝膜接触;以及进行加热工艺,使所述铝膜与所述有机材料层发生反应以形成所述铝碳层和所述有机层。
例如,本公开一实施例提供的封装方法中,所述有机材料层包括-((CH2)m O-)n基团,m和n为正整数;所述铝膜与位于所述有机材料层的与所述铝膜接触的表面的所述-((CH2)m O-)n基团发生反应生成所述铝碳层。
例如,本公开一实施例提供的封装方法中,所述铝膜的靠近所述有机材料层的一部分与所述有机材料层发生反应,所述铝膜的靠近所述无机层的另一部分未与所述有机材料层发生反应;所述铝膜的未与所述有机材料层发生反应的部分形成铝金属层。
例如,本公开一实施例提供的封装方法中,所述有机材料层包括有机溶剂,所述有机溶剂包括所述-((CH2)m O-)n基团。
例如,本公开一实施例提供的封装方法中,m=2,n=1~6。
例如,本公开一实施例提供的封装方法包括:进行所述加热工艺,使所述有机材料层固化并使所述铝膜与所述有机材料层发生反应以形成所述铝碳层和所述有机层。
例如,本公开一实施例提供的封装方法中,所述进行加热工艺包括:进行真空加热工艺。
例如,本公开一实施例提供的封装方法还包括:在形成所述无机层之后,对所述无机层进行等离子体处理。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。
图1为一种封装结构的示意图;
图2A为本公开一实施例提供的一种封装结构的示意图;
图2B为本公开一实施例提供的另一种封装结构的示意图;
图3A为本公开一实施例提供的另一种封装结构的示意图;
图3B为本公开一实施例提供的另一种封装结构的示意图;
图4为本公开一实施例提供的一种电子装置示意图;
图5A-5H为本公开一实施例提供的一种封装方法示意图;
图6A-6H为本公开一实施例提供的另一种封装方法示意图。
附图标记
101-衬底基板;102-电子器件;103-无机封装层;104-有机封装层;1-衬底基板;2-电子器件;3-无机层;301-无机层的第一表面;4-有机层;401-有机材料层;5-铝碳层;6-第二无机层;7-铝膜;701-铝金属层;8-第三无机层;9-第二有机层;10-封装结构;11-电子装置。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其它实施例,都属于本发明保护的范围。
除非另作定义,此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“内”、“外”、“上”、“下”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。
本公开所使用的附图并不是严格按实际比例绘制,各个结构的具体地尺寸和数量可根据实际需要进行确定。本公开中所描述的附图仅是结构示意图。
图1为一种封装结构的示意图。如图1所示,该封装结构包括衬底基板101、电子器件102、无机封装层103和有机封装层104。电子器件102设置于衬底基板101上,无机封装层103覆盖电子器件102,有机封装层104设置于无机封装层103上。在使用过程中,由于无机封装层103的延展性较差,与有机层相比,更容易产生裂隙。另外,无机封装层103与有机封装层104的结合强度较低,不利于无机封装层103在弯曲过程中释放应力,因此无机封装层103容易产生裂隙,从而导致外界的湿气、氧气等通过裂隙接触到电子器件,会减少电子器件的使用寿命。
本公开至少一实施例提供一种封装结构,该封装结构包括无机层、铝碳层和有机层。铝碳层位于无机层上且与无机层接触;有机层位于铝碳层上且与铝碳层接触。
示范性地,图2A为本公开一实施例提供的一种封装结构的示意图。如图2A所示,封装结构10包括衬底基板1、电子器件2、无机层、铝碳层5和有机层4。衬底基板1例如可以为玻璃基板、石英基板等。例如,衬底基板1也可以为柔性基板,此时,例如衬底基板1的材料为聚酰亚胺。当然,衬底基板1的类型和材料不限于上述列举种类,本公开实施例对此不作限定。电子器件2设置于衬底基板1上。例如,电子器件2可以为有机发光二极管(OLED)器件或其他需要密封的电子器件。无机层包括第一无机层3,第一无机层3设置于衬底基板1上并覆盖电子器件2和至少部分衬底基板1,以实现对电子器件2的密封。铝碳层5位于第一无机层3上且与第一无机层3接触。例如,在图2A所示的实施例中,铝碳层5覆盖第一无机层3。有机层4位于铝碳层5上且与铝碳层5接触。无机层的隔绝湿气(例如水汽)和氧气的能力较强,有机层具有比较好的延展性,能够辅助无机层释放应力,使得封装结构在弯曲的过程中,封装结构(无机层和有机层)不容易产生裂隙,从而能够保持较好的密封效果,更好地适应柔性装置。本公开的实施例提供的封装结构10中,在第一无机层3和有机层4之间设置有铝碳层5,且铝碳层5同时与第一无机层3和有机层4接触,由于铝碳层5与第一无机层3之间的结合强度、铝碳层5与有机层4之间的结合强度均高于第一无机层3与有机层4直接接触时第一无机层3与有机层4之间的结合强度。因此,本公开实施例提供的封装结构中,铝碳层能够提高无机层和有机层之间的结合强度。与图1所示的封装结构相比,在第一无机层3发生弯曲的过程中,本公开实施例提供的封装结构一方面能够改善或防止封装结构发生分层翘曲的现象;另一方面,第一无机层3能够更好地通过铝碳层5和有机层4释放其由于弯曲变形所产生的应力,从而改善或防止第一无机层3产生裂隙,这有利于防止外界的湿气(例如水汽)、氧气和其他物质等通过无机层的裂隙接触电子器件,从而能够延长电子器件的使用寿命。本公开实施例提供的封装结构能够获得更好的封装效果。并且,在本公开至少一实施例提供的封装结构中,例如铝碳层5是由铝与用于形成有机层4的有机材料层发生反应而生成的,铝碳层5与有机层4之间的结合力包括化学键合力。而在通常的通过在无机层上方设置(例如涂覆)有机层形成的结构中,无机层与有机层之间的结合力为静电吸附力,例如范德华力,这种结合并不包括化学键合力作用,而通常在其他条件相同的情况下,通过化学键合力使铝碳层与有机层结合的强度大于通过静电吸附力使铝碳层与有机层结合的强度。因此,与上述通常的在无机层上方设置(例如涂覆)有机层形成的结构相比,本公开实施例提供的封装结构的铝碳层5与有机层4结合的强度更高,从而能够更好地提高无机层和有机层之间的结合强度。
例如,在图2A所示的实施例中,无机层仅包括第一无机层3。
例如,铝碳层5包括(R((CH2)m O)n)3Al,m和n为正整数,R为烷基或苯基。例如,m=2,n=1~6,此时,在制备铝碳层5时,生成构成铝碳层5的铝碳材料的反应能够更加顺利地进行而得到所需的铝碳层5。例如,m=2,n等于4时,铝碳层5包括(R(CH2CH2O)4)3Al。
例如,在-((CH2)m O-)n基团中,m=2,n=1~6,此时,当利用有机层4的材料制备铝碳层5时,有利于生成构成铝碳层5的铝碳材料的反应更加顺利地进行而得到所需的铝碳层5。
例如,有机层4可以包括树脂材料。例如,该树脂材料为热固化型树脂;例如,不饱和聚酯树脂、环氧树脂、酚醛树脂等。例如,该树脂材料也可以为光固化型树脂;例如,聚酯丙烯酸树脂或乙烯基醚树脂等。当然,有机层不限于包括树脂材料,也不限于是上述列举的种类,本公开实施例对有机层的材料不作限定。
例如,有机层4由有机溶液形成,该有机溶液的溶剂包括(-(CH2)m O-)n基团。
例如,第一无机层3可以包括氧化铝。氧化铝的化学性质稳定,不易被腐蚀,能够达到较好的封装效果;并且氧化铝的耐热性好,用氧化铝制备的封装层,在电子器件工作过程放热时,也能够保持稳定的性质,达到较好的封装效果;另外,氧化铝具有较好的延展性,在封装结构发生弯曲的过程中,氧化铝层不易出现裂隙,从而实现较好的封装效果,能够得到密封性更好的柔性封装结构,从而能够利用该柔性封装结构获得密封性更好的柔性装置,例如柔性显示面板。另外,在本公开的实施例中,在第一无机层3包括氧化铝的情形下,第一无机层3和铝碳层5之间的结合力会进一步增强。
例如,第一无机层3也可以包括除了氧化铝以外的其他材料,例如,第一无机层3可以也可以包括氮化硅、氧化硅和氮氧化硅中的至少之一。当然,第一无机层3的材料不限于是上述列举的种类,本公开实施例对第一无机层3的材料不作限定。
图2B为本公开一实施例提供的另一种封装结构的示意图。图2B所示的封装结构与图2A所示的封装结构的区别在于,无机层包括第一无机层3和位于第一无机层3上的铝金属层701,铝碳层5位于铝金属层701上且与铝金属层701接触。在封装过程中,铝金属层701可用于形成铝碳层5。在图2B所示的实施例中,铝碳层5能够增强铝金属层701与有机层4之间的结合强度,在达到与图2A所示的实施例相同的技术效果的基础上,例如由于铝碳层5是由铝金属层701中的靠近有机层4的部分铝原子与用于形成有机层4的有机材料层反应形成的,因此,铝金属层701与铝碳层5结合力也包括化学键合力,例如铝金属层701中的铝原子与铝碳层5的(R(CH2CH2O)4)3Al分子之间存在化学键合作用(例如离子键合作用)。而在通常的通过在铝金属层上方设置铝碳层形成的结构中,铝金属层与铝碳层之间的结合力为静电吸附力,例如范德华力,这种结合并不包括化学键合力作用。由于在其他条件相同的情况下,通过化学键合力使铝金属层与铝碳层结合的强度大于通过静电吸附力使金属层与铝碳层结合的强度,因此,与上述通常的在铝金属层上方设置铝碳层形成的结构相比,本公开实施例提供的封装结构的铝金属层701与铝碳层5结合的强度更高,从而能够更好地提高无机层和有机层之间的结合强度。
在本公开另一实施例中,封装结构的无机层可以包括多个层叠设置的无机层。图3A为本公开一实施例提供的另一种封装结构的示意图,如图3A所示,该封装结构10与图2A所示的封装结构的区别在于,该封装结构10还包括第二无机层6,第二无机层6位于第一无机层3的远离铝碳层5的一侧并覆盖所述电子器件2。第一无机层3位于第二无机层6上且与所述第二无机层6接触。图3A所示的封装结构10的其他特征均与图2A所示的封装结构的相同。第一无机层3和第二无机层6层叠设置有利于进一步提高封装结构隔绝湿气和氧气等物质的能力。铝碳层5能够提高包括第一无机层3和第二无机层6的无机层与有机层4之间的结合强度,从而达到与图2A所示的封装结构相同或相似的技术效果,该技术效果请参考上述描述,在此不再赘述。例如,第二无机层6不同于第一无机层3;例如,第二无机层6包括氮化硅、氧化硅和氮氧化硅中的至少之一且第一无机层3包括氧化铝。
图3B为本公开一实施例提供的另一种封装结构的示意图。以依次层叠的第一有机层3、铝碳层5和有机层4为一个封装层单元,图3B所示的封装结构10与图2A所示的封装结构的区别在于,该封装结构10包括两个层叠设置的所述封装层单元,这有利于进一步提高封装结构对电子器件的密封效果。当然,在本公开的其他实施例中,封装结构也可以包括多于两个层叠设置的封装层单元,封装层单元的个数不限于图3B所示的个数。
需要说明的是,本公开实施例提供的封装结构的各个技术特征可以进行组合,不同的实施例也可以进行组合。
本公开至少一实施例还提供一种电子装置,该电子装置包括本公开实施例提供的任意一种封装结构。示范性地,图4为本公开一实施例提供的一种电子装置示意图。如图4所示,电子装置11包括本公开实施例提供的任意一种封装结构10。例如,该电子装置可以是显示装置,例如OLED显示装置。例如该显示装置可以为柔性显示装置。例如,该显示装置可以是手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等具有显示功能的产品或部件。例如,电子装置11也可以是照明装置,例如OLED照明装置,例如,装饰性彩灯、柔性照明装置等。当然,本公开实施例对电子装置的种类没有限定。
需要说明的是,图4只是一个包括本公开实施例提供的任意一种封装结构的电子装置的示意图,电子装置的未示出其他结构,本领域技术人员可参考常规技术,本实施例对此不作限定。本公开至少一实施例还提供一种封装方法,该方法包括:形成无机层;形成铝碳层,所述铝碳层位于所述无机层上且与所述无机层接触;以及形成有机层,有机层位于所述铝碳层上且与所述铝碳层接触。
示范性地,图5A-5H为本公开一实施例提供的一种封装方法示意图。在该实施例中,无机层包括第一无机层3。如图5A所示,提供设置有电子器件2的衬底基板1。例如,衬底基板1可以为玻璃基板、石英基板等。例如,衬底基板1也可以为柔性基板,此时,例如衬底基板1的材料为聚酰亚胺。当然,衬底基板1的类型和材料不限于上述列举种类,本公开实施例对此不作限定。例如,电子器件2可以为有机发光二极管(OLED)器件或其他需要密封的电子器件。
如图5B所示,形成第一无机层3,第一无机层3覆盖电子器件2,以对电子器件2实现密封。例如,第一无机层3还覆盖至少部分衬底基板1。例如,可以采用原子层积淀(ALD)法形成第一无机层3。原子层积淀法能够较好地控制所形成的薄膜的厚度,对温度和反应物通量的变化不太敏感;这样,得到的薄膜既具有高纯度又具有高密度,既平整又具有高度的保型性,这样的封装薄膜具有更好的密封性以及更稳定的密封效果。另外,ALD的实现温度较低,例如,多数ALD工艺可以在400摄氏度以下进行,这有利于降低能耗,降低生产成本。当然,也可以采用化学气相沉积、磁控溅射沉积等方法形成第一无机层3,本公开实施例对形成无机层的具体方法不作限定。
例如,形成第一无机层3的材料可以为氧化铝。氧化铝的化学性质稳定,不易被腐蚀,能够达到较好的封装效果;并且氧化铝的耐热性好,用氧化铝制备的封装层,在电子器件工作过程放热时,也能够保持稳定的性质,达到较好的封装效果;另外,氧化铝具有较好的延展性,在封装结构发生弯曲的过程中,无机层不易出现裂隙,从而实现较好的封装效果,能够得到密封性更好的柔性封装结构,从而能够利用该柔性封装结构获得密封性更好的柔性装置,例如柔性显示面板。另外,在本公开的实施例中,在第一无机层3包括氧化铝的情形下,第一无机层3和铝碳层5之间的结合力会进一步增强。
例如,形成第一无机层3的材料也可以是除了氧化铝以外的其他材料,例如,形成第一无机层3的材料也可以为氮化硅、氧化硅和氮氧化硅中的至少之一。当然,形成第一无机层的材料不限于是上述列举的种类,本公开实施例对无机层的材料不作限定。
如图5C所示,在形成第一无机层3之后,对第一无机层3进行等离子体处理。需要说明的是,该等离子体处理使得第一无机层3的将要与后续形成的铝膜或铝金属层接触的第一表面301的粗糙度增加。例如,在第一无机层3的第一表面301上形成肉眼可见或非肉眼可见的凹坑。这样,在后续形成与第一无机层3的第一表面301接触的铝膜或铝金属层后,铝膜或铝金属层与第一无机层3的接触面积增大,因此,第一无机层3和铝膜或铝金属层之间的结合强度能够得到提高,从而能够使得后续形成的铝碳层与第一无机层3的结合强度得到提高,或者能够使得后续形成的铝金属层与第一无机层3的结合强度得到提高。这能够使不同的封装层之间结合得更加牢固,不容易出现裂隙和翘曲,从而能够实现更好的封装效果。
如图5D所示,在形成第一无机层3之后,例如,在图5B或图5C所示的工艺之后,形成铝膜7。铝膜7位于第一无机层3上且与第一无机层3接触。例如,可以采用原子层积淀(ALD)法形成铝膜7,也可以采用化学气相沉积、磁控溅射沉积等方法形成铝膜7。当然,本公开实施例对形成铝膜的具体方法不作限定。例如,铝膜7的厚度为10-100nm。铝膜7过于薄不利于生成合适厚度的铝碳层,铝膜7过于厚不利于封装结构的薄化。
如图5E所示,形成有机材料层401,有机材料层401位于铝膜7上且与铝膜7接触。例如,有机材料层401包括-((CH2)m O-)n基团,m和n为正整数。例如,m=2,n=1~6。例如,有机材料层401包括有机溶剂。例如,有机材料层401的与铝膜接触的表面吸附有有机溶剂分子。该有机溶剂包括-((CH2)m O-)n基团。例如,有机溶剂包括R((CH2)m O-)n,R为烷基或苯基,m和n为正整数。例如,该有机溶剂包括醇类。以R为甲基、m=2、n=1为例,该有机溶剂的至少一种成分可以为丙醇。有机材料层401还包括树脂材料。例如,将树脂材料与有机溶剂制成有机溶液,再将有机溶液涂覆至铝膜7上,形成有机材料层401。例如,该树脂材料为热固化型树脂;例如,不饱和聚酯树脂、环氧树脂、酚醛树脂等。例如,该树脂材料也可以为光固化型树脂;例如,聚酯丙烯酸树脂、乙烯基醚树脂等。当然,有机层的材料不限于包括树脂材料,也不限于是上述列举的种类,本公开实施例对有机层的材料不作限定。
如图5F所示,进行加热工艺,使铝膜7与有机材料层401发生反应以形成如图5G所示的铝碳层5和有机层4。例如,铝膜7与位于有机材料层401的与铝膜7接触的表面的-((CH2)m O-)n基团发生反应生成铝碳材料,铝碳材料构成铝碳层5。例如,铝膜7的铝单质全部参与反应,形成如图5G所示的封装结构。在图5G所示的封装结构中,铝碳层5位于第一无机层3上且与第一无机层3接触。有机层4位于铝碳层5上且与铝碳层5接触。通过本公开实施例提供的封装方法,可以在第一无机层3和有机层4之间设置有铝碳层5,且铝碳层5同时与第一无机层3和有机层4接触,由于铝碳层5与第一无机层3之间的结合强度、铝碳层5与有机层4之间的结合强度均高于第一无机层3与有机层4直接接触时第一无机层3与有机层4之间的结合强度。因此,铝碳层能够提高无机层和有机层之间的结合强度。这种方法一方面能够改善或防止封装结构发生分层翘曲的现象;另一方面,可以使第一无机层3更好地通过铝碳层5和有机层4释放其由于弯曲变形所产生的应力,从而改善或防止第一无机层3产生裂隙,获得更好的封装效果,防止外界的湿气(例如水汽)、氧气和其他物质等通过无机层的裂隙接触电子器件,从而能够延长电子器件的使用寿命。并且,在本公开至少一实施例提供的封装方法中,铝碳层5是由铝膜7与用于形成有机层4的有机材料层401发生反应而生成的,因此,铝碳层5与有机层4之间的结合力包括化学键合力。而通常的通过在无机层上方设置(例如涂覆)有机层形成的结构中,无机层与有机层之间的结合力为静电吸附力,例如范德华力,这种结合并不包括化学键合力作用,而通常在其他条件相同的情况下,通过化学键合力使铝碳层与有机层结合的强度大于通过静电吸附力使铝碳层与有机层结合的强度。因此,与上述通常的在无机层上方设置(例如涂覆)有机层形成的结构相比,在通过本公开实施例提供的封装方法形成的如图5G所示的封装结构中,铝碳层5与有机层4结合的强度更高,从而能够更好地提高无机层和有机层之间的结合强度。
例如,在图5F所示的工艺中,当电子器件2需要隔绝氧气以防止氧气对其的损害时,上述加热方法为真空加热。例如,可以在真空加热炉中进行真空加热。此时,该反应的化学反应式为:
例如,m=2,n=1~6,此时,有利于该反应更加顺利地进行而得到所需的铝碳层5。以m=2为例,该反应的方程式为:
例如,在图5E中形成的有机材料层401处于未固化的状态。例如,在进行上述加热工艺时,使有机材料层401固化并同时使铝膜7与有机材料层401发生反应以形成铝碳层5和有机层4。当有机材料层401中的树脂材料为热固化树脂时,在上述加热过程中,实现有机材料层401的固化,从而得到固化后的有机层4。即,在通过化学反应形成铝碳层5的同时,固化有机材料层401而得到有机层4。如此,无需单独进行有机材料层401的固化,有利于简化封装工艺,提高生产效率。
在上述反应过程中,例如,铝膜7的靠近有机材料层401的一部分与有机材料层401发生反应,铝膜7的靠近第一无机层3另一部分未与有机材料层401发生反应,铝膜7的未与有机材料层401发生反应的部分形成铝金属层4。例如,只有铝膜7的与有机材料层接触的表面上的铝单质参与反应,即,反应完成后还有铝剩余,剩余的铝形成铝金属层4。此时,形成如图5H所示的封装结构,该封装结构还包括位于第一无机层3上的铝金属层701,铝碳层5位于铝金属层701上,在此情形下,在达到与图5A-5G所示的实施例相同的技术效果的基础上,由于铝碳层5是由铝金属层701中的靠近有机材料层401的部分铝原子与用于形成有机层4的有机材料层401反应形成的,因此,铝金属层701与铝碳层5结合力也包括化学键合力,例如铝金属层701中的铝原子与铝碳层5的(R(CH2CH2O)4)3Al分子之间存在化学键合作用(例如离子键合作用)。而通常的通过在铝金属层上方设置铝碳层形成的结构中,铝金属层与铝碳层之间的结合力为静电吸附力,例如范德华力,这种结合并不包括化学键合力作用。由于通常在其他条件相同的情况下,通过化学键合力使铝金属层与铝碳层结合的强度大于通过静电吸附力使金属层与铝碳层结合的强度,因此,与上述通常的在铝金属层上方设置铝碳层形成的结构相比,在通过本公开实施例提供的封装方法形成的如图5H所示的封装结构中,铝金属层701与铝碳层5结合的强度更高,从而能够更好地提高无机层和有机层之间的结合强度。
图6A-图6G为本公开一实施例提供的另一种封装方法示意图,该实施例中,无机层包括层叠设置的第一无机层和第二无机层。如图6A所示,在提供图5A所示的结构的基础上,在形成第一无机层3之前,形成第二无机层6。第二无机层6与电子器件2接触。形成第二无机层6的方法可以参考形成第一无机层3的方法,请参考之前的实施例中的描述。
如图6B所示,在形成第二无机层6之后,在第二无机层6上形成第一无机层3。第一无机层3和第二无机层6层叠设置有利于进一步提高封装结构隔绝湿气和氧气等物质的能力。例如,第二无机层6不同于第一无机层3;例如,第二无机层6包括氮化硅、氧化硅和氮氧化硅中的至少之一且第一无机层3包括氧化铝。
如图6C所示,对第一无机层3进行等离子体处理。需要说明的是,该等离子体处理使得第一无机层3的将要与后续形成的铝膜或铝金属层接触的第一表面301的粗糙度增加。例如,在第一无机层3的第一表面301上形成肉眼可见或非肉眼可见的凹坑。这样,在后续形成与第一无机层3的第一表面301接触的铝膜或铝金属层后,铝膜或铝金属层与第一无机层3的接触面积增大,因此,第一无机层3和铝膜或铝金属层之间的结合强度能够得到提高,从而能够使得后续形成的铝碳层或铝金属层与第一无机层3的结合强度得到提高。这能够使不同的封装层之间结合得更加牢固,不容易出现裂隙和翘曲,从而能够实现更好的封装效果。
如图6D所示,在第二无机层6上形成铝膜7,铝膜7与第一无机层3接触。形成铝膜7的具体方法与图5D所示的相同。后续方法如图6E-6H所示,分别与图5E-5H所示的方法相同,请参考上面的描述,在此不再赘述。
需要说明的是,本公开不同的实施例提供的封装方法中,各个技术特征可以互相组合。
以上所述仅是本发明的示范性实施方式,而非用于限制本发明的保护范围,本发明的保护范围由所附的权利要求确定。
Claims (14)
1.一种封装结构,包括:
衬底基板;
位于所述衬底基板上的电子器件;
位于所述电子器件上的无机层;
铝碳层,位于所述无机层上且与所述无机层接触;以及
有机层,位于所述铝碳层上且与所述铝碳层接触;
其中,所述无机层具有三层结构,所述三层结构包括依次远离所述铝碳层的铝金属层、第一无机层和第二无机层,所述第一无机层覆盖所述电子器件和至少部分所述衬底基板,
所述铝碳层是由铝膜中的靠近所述有机层的部分铝原子与用于形成所述有机层的有机材料层反应形成的,所述铝金属层与所述铝碳层之间通过化学键合力相结合,所述铝碳层包括 (R ((CH2)m O)n)3 Al,m和n为正整数,R为烷基或苯基,m=2,n=1~6。
2.根据权利要求1所述的封装结构,其中,所述铝碳层位于所述铝金属层上且与所述铝金属层接触。
3.根据权利要求2所述的封装结构,其中,所述第一无机层包括氧化铝。
4.根据权利要求2所述的封装结构,其中,该第二无机层位于所述第一无机层的远离所述铝碳层的一侧。
5.一种电子装置,包括权利要求1-4任一所述的封装结构。
6.一种封装方法,包括:
提供设置有电子器件的衬底基板;
在所述电子器件上形成无机层;
形成铝碳层,所述铝碳层位于所述无机层上且与所述无机层接触;以及
形成有机层,所述有机层位于所述铝碳层上且与所述铝碳层接触;
其中,所述无机层具有三层结构,所述三层结构包括依次远离所述铝碳层的铝金属层、第一无机层和第二无机层,所述第一无机层覆盖所述电子器件和至少部分所述衬底基板,
所述铝碳层是由铝膜的靠近所述有机层的部分铝原子与用于形成所述有机层的有机材料层反应形成的,所述铝金属层与所述铝碳层之间通过化学键合力相结合,所述有机材料层包括 -( (CH2)m O-)n 基团,m和n为正整数。
7.根据权利要求6所述的封装方法,其中,在形成所述无机层之后,所述方法包括:
形成所述铝膜,所述铝膜位于所述无机层上且与所述无机层接触;
形成所述有机材料层,所述有机材料层位于所述铝膜上且与所述铝膜接触;以及
进行加热工艺,使所述铝膜与所述有机材料层发生反应以形成所述铝碳层和所述有机层。
8.根据权利要求7所述的封装方法,其中,所述铝膜的靠近所述有机材料层的一部分与所述有机材料层发生反应,所述铝膜的靠近所述无机层的另一部分未与所述有机材料层发生反应;所述铝膜的未与所述有机材料层发生反应的部分形成所述铝金属层。
9.根据权利要求7所述的封装方法,其中,所述铝膜与位于所述有机材料层的与所述铝膜接触的表面的所述-( (CH2)m O-)n基团发生反应生成所述铝碳层。
10.根据权利要求9所述的封装方法,其中,所述有机材料层包括有机溶剂,所述有机溶剂包括所述-( (CH2)m O-)n基团。
11.根据权利要求9所述的封装方法,其中,m=2,n=1~6。
12.根据权利要求7-11任一项所述的封装方法,包括:进行所述加热工艺,使所述有机材料层固化并同时使所述铝膜与所述有机材料层发生反应以形成所述铝碳层和所述有机层。
13.根据权利要求7-11任一项所述的封装方法,其中,所述进行加热工艺包括:进行真空加热工艺。
14.根据权利要求6-11任一所述的封装方法,还包括:
在形成所述无机层之后,对所述无机层进行等离子体处理。
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CN110048017A (zh) * | 2019-04-01 | 2019-07-23 | 深圳市华星光电半导体显示技术有限公司 | 显示面板和显示面板的封装方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105304685A (zh) * | 2015-11-30 | 2016-02-03 | 上海天马微电子有限公司 | 一种显示面板及其制作方法 |
CN105336761A (zh) * | 2015-10-19 | 2016-02-17 | Tcl集团股份有限公司 | 有机电致发光二极管及其制备方法、显示装置 |
CN107302014A (zh) * | 2017-07-17 | 2017-10-27 | 上海天马有机发光显示技术有限公司 | 一种有机发光显示面板,其显示装置及其制作方法 |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2747945B1 (fr) * | 1996-04-26 | 1998-08-21 | Lorraine Laminage | Traitement de surface de tole metallique |
JP3866811B2 (ja) * | 1996-12-27 | 2007-01-10 | 松下電器産業株式会社 | 単分子膜およびその製造方法 |
US6322712B1 (en) * | 1999-09-01 | 2001-11-27 | Micron Technology, Inc. | Buffer layer in flat panel display |
US6506616B1 (en) * | 1999-11-18 | 2003-01-14 | Texas Instruments Incorporated | Photolithographic method for fabricating organic light-emitting diodes |
CN1215132C (zh) * | 2002-09-25 | 2005-08-17 | 东南大学 | 金属自组装纳米阻蚀膜的组装方法 |
JP2005254712A (ja) * | 2004-03-15 | 2005-09-22 | Toray Ind Inc | 高ガスバリア性フィルムおよびその製造方法 |
US8501277B2 (en) * | 2004-06-04 | 2013-08-06 | Applied Microstructures, Inc. | Durable, heat-resistant multi-layer coatings and coated articles |
NL1033860C2 (nl) * | 2007-05-16 | 2008-11-18 | Otb Group Bv | Werkwijze voor het aanbrengen van een dunnefilm-encapsulatielaagsamenstel op een organisch device en een organisch device voorzien van een dunnefilm-encapsulatielaagsamenstel bij voorkeur aangebracht met een dergelijke werkwijze. |
KR100875099B1 (ko) * | 2007-06-05 | 2008-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 및 이의 제조 방법 |
EP2171534B1 (en) * | 2007-06-22 | 2015-12-02 | The Regents of the University of Colorado | Protective coatings for organic electronic devices made using atomic layer deposition and molecular layer deposition techniques |
US20090081360A1 (en) * | 2007-09-26 | 2009-03-26 | Fedorovskaya Elena A | Oled display encapsulation with the optical property |
US7858144B2 (en) * | 2007-09-26 | 2010-12-28 | Eastman Kodak Company | Process for depositing organic materials |
TWI388078B (zh) * | 2008-01-30 | 2013-03-01 | Osram Opto Semiconductors Gmbh | 電子組件之製造方法及電子組件 |
TWI381569B (zh) * | 2008-12-30 | 2013-01-01 | Ind Tech Res Inst | 有機發光二極體裝置及其封裝方法 |
KR101015851B1 (ko) * | 2009-02-09 | 2011-02-23 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
JP5334900B2 (ja) * | 2010-03-25 | 2013-11-06 | 富士フイルム株式会社 | ガスバリアフィルムおよびデバイス |
WO2012039310A1 (ja) * | 2010-09-22 | 2012-03-29 | 株式会社アルバック | 有機el素子の製造方法、成膜装置、有機el素子 |
US8772066B2 (en) * | 2011-02-08 | 2014-07-08 | Applied Materials, Inc. | Method for hybrid encapsulation of an organic light emitting diode |
WO2013155462A1 (en) * | 2012-04-12 | 2013-10-17 | The Regents Of The University Of Colorado, A Body Corporate | Multi-layer structure including an interlayer to reduce stress in the structure and method of forming same |
US20130333835A1 (en) * | 2012-06-14 | 2013-12-19 | E I Du Pont De Nemours And Company | Process for manufacturing gas permeation barrier material and structure |
US20130337259A1 (en) * | 2012-06-14 | 2013-12-19 | E I Du Pont De Nemours And Company | Gas permeation barrier material |
TWI477642B (zh) * | 2012-07-25 | 2015-03-21 | E Ink Holdings Inc | 阻氣基板 |
KR101970361B1 (ko) * | 2012-08-20 | 2019-04-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조방법 |
US9397318B2 (en) * | 2012-09-04 | 2016-07-19 | Applied Materials, Inc. | Method for hybrid encapsulation of an organic light emitting diode |
IN2015DN03311A (zh) * | 2012-09-28 | 2015-10-09 | Dainippon Printing Co Ltd | |
KR102062754B1 (ko) * | 2012-11-14 | 2020-01-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US20140141191A1 (en) * | 2012-11-20 | 2014-05-22 | Veeco Ald Inc. | Hydrophobic and Oleophobic Encapsulation Material with Alternating Layers |
KR101996436B1 (ko) * | 2013-02-14 | 2019-07-05 | 삼성디스플레이 주식회사 | 박막 봉지 구조를 갖는 유기 전계 발광 소자 및 그 제조 방법 |
US9252392B2 (en) * | 2013-03-14 | 2016-02-02 | Applied Materials, Inc. | Thin film encapsulation-thin ultra high barrier layer for OLED application |
CN104103660A (zh) * | 2013-04-04 | 2014-10-15 | 谢再锋 | 一种复合薄膜封装的有机发光二极管显示器及其制造方法 |
CN104518095A (zh) * | 2013-09-27 | 2015-04-15 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
KR102110918B1 (ko) * | 2013-10-29 | 2020-05-14 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
CN104846350A (zh) * | 2014-02-18 | 2015-08-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种有机无机杂化的高阻隔膜及其制备方法 |
WO2015152069A1 (ja) * | 2014-03-31 | 2015-10-08 | 大日本印刷株式会社 | ガスバリア性フィルム及びその製造方法 |
WO2016012046A1 (en) * | 2014-07-24 | 2016-01-28 | Osram Gmbh | Method for producing a barrier layer and carrier body comprising such a barrier layer |
WO2016133364A1 (ko) * | 2015-02-17 | 2016-08-25 | 주식회사 엘지화학 | 봉지 필름 |
CN106158901B (zh) * | 2015-03-24 | 2020-06-23 | 上海和辉光电有限公司 | 一种混合型薄膜及其制备方法、以及柔性oled显示器 |
US20160365538A1 (en) * | 2015-06-15 | 2016-12-15 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Packaging structure of oled device and packaging method thereof |
KR102424597B1 (ko) * | 2015-06-30 | 2022-07-25 | 엘지디스플레이 주식회사 | 플렉서블 유기발광다이오드 표시장치 및 그 제조 방법 |
CN106711345A (zh) * | 2015-11-12 | 2017-05-24 | 宁波长阳科技股份有限公司 | 一种柔性透明阻隔膜及其制备方法 |
US20190036077A1 (en) * | 2016-02-18 | 2019-01-31 | Sharp Kabushiki Kaisha | Method for producing organic el display device, and organic el display device |
KR101924144B1 (ko) * | 2016-03-11 | 2018-11-30 | 주식회사 엘지화학 | 봉지 필름 |
DE102016109485A1 (de) * | 2016-05-24 | 2017-11-30 | Osram Oled Gmbh | Verfahren zum herstellen eines optoelektronischen bauelements, optoelektronisches bauelement und schutzschicht |
CN105977394A (zh) * | 2016-06-15 | 2016-09-28 | 信利(惠州)智能显示有限公司 | 一种柔性oled器件及其封装方法 |
JP6725335B2 (ja) * | 2016-06-20 | 2020-07-15 | 株式会社ジャパンディスプレイ | 半導体装置 |
CN106299153A (zh) * | 2016-10-10 | 2017-01-04 | 昆山工研院新型平板显示技术中心有限公司 | 一种薄膜封装方法及其结构 |
CN106328825B (zh) * | 2016-10-31 | 2019-01-15 | 武汉华星光电技术有限公司 | Oled显示器 |
CN106450035B (zh) * | 2016-11-17 | 2018-10-30 | 上海天马有机发光显示技术有限公司 | 一种显示面板及其制备方法 |
KR102696807B1 (ko) * | 2017-02-06 | 2024-08-21 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN107068904A (zh) * | 2017-04-18 | 2017-08-18 | 京东方科技集团股份有限公司 | 无机封装薄膜、oled封装薄膜的制作方法及相应装置 |
CN107123753A (zh) * | 2017-05-15 | 2017-09-01 | 福州大学 | 一种薄膜封装方法 |
US10205125B2 (en) * | 2017-07-12 | 2019-02-12 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method of manufacturing package assembly, package assembly, and display device |
US10804494B2 (en) * | 2017-11-10 | 2020-10-13 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display device, display panel and manufacturing method thereof |
CN107958960B (zh) * | 2017-11-16 | 2019-12-13 | 武汉华星光电半导体显示技术有限公司 | 封装薄膜及显示装置 |
US10826017B2 (en) * | 2018-03-30 | 2020-11-03 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Packaging assembly and preparation method thereof, and display device |
US10446780B1 (en) * | 2018-04-19 | 2019-10-15 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light emitting diode package structure and its method of manufacturing, display device |
US10741792B2 (en) * | 2018-05-21 | 2020-08-11 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Inorganic material having alkoxy chain encapsulating a display panel |
-
2018
- 2018-03-29 CN CN201810270158.9A patent/CN108448006B/zh active Active
- 2018-12-11 US US16/215,888 patent/US10879488B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105336761A (zh) * | 2015-10-19 | 2016-02-17 | Tcl集团股份有限公司 | 有机电致发光二极管及其制备方法、显示装置 |
CN105304685A (zh) * | 2015-11-30 | 2016-02-03 | 上海天马微电子有限公司 | 一种显示面板及其制作方法 |
CN107302014A (zh) * | 2017-07-17 | 2017-10-27 | 上海天马有机发光显示技术有限公司 | 一种有机发光显示面板,其显示装置及其制作方法 |
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