TWI477642B - 阻氣基板 - Google Patents
阻氣基板 Download PDFInfo
- Publication number
- TWI477642B TWI477642B TW101126795A TW101126795A TWI477642B TW I477642 B TWI477642 B TW I477642B TW 101126795 A TW101126795 A TW 101126795A TW 101126795 A TW101126795 A TW 101126795A TW I477642 B TWI477642 B TW I477642B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas barrier
- barrier layer
- substrate
- inorganic gas
- inorganic
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
- G02F1/133311—Environmental protection, e.g. against dust or humidity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/24992—Density or compression of components
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
Description
本發明是有關於一種阻氣基板,且特別是有關於一種良好阻氣能力之阻氣基板。
顯示器是否具備可撓性,取決於其所使用的基板材質。當顯示器所使用的基板為硬質基板(rigid substrate)時,例如玻璃基板,顯示器不具有可撓性。反之,顯示器所使用的基板為可撓性基板(flexible substrate)時,例如塑膠基板,顯示器即具有良好的可撓性。
可撓性基板相較於一般硬質基板的優點為便宜、透明、易加工、符合安全性、適合所有顯示介質並適合Roll-to-Roll製程,但其缺點為不耐高溫、阻水阻氧氣性差、耐化學藥品性差及熱膨脹係數大。典型的可撓性基板對水的穿透速率為100~10-1
g/m2
/day(25℃),其因無法完全阻隔水氣及氧氣的穿透,進而加速基板內之元件老化,導致所製成的元件壽命減短,無法符合商業上的需求。因此,為了阻隔水氧,在可撓性基板和無機導電層之間塗覆緻密的特殊材料,以防止水氧的滲透及擴散,此緻密阻隔材料的選取需使其在塗覆過程中能無缺陷地(defect-free)均勻成膜、不會產生針孔(pinholes)、高透光性及避免對可見光的吸收,並以單層或多層堆疊的方式來達成可撓性基板對於阻氣的需求。
目前做在可撓性基板上之柔軟阻氣膜包括有機膜與無機膜,無機膜例如金屬氧化物(metal oxide)、金屬氮化物(metal nitride)、金屬氮氧化物(metal oxynitride)等,其中無機膜之阻氣性較有機膜佳,而有機膜可以保持整體阻氣層之柔軟度。然而,若為了增加阻隔水氧之特性而增加無機膜之厚度,過厚之無機膜容易於撓曲時出現裂縫(crack),因此如何避免因應力集中所造成阻氣膜失效的問題就相形重要。
本發明提供一種阻氣基板,具有良好的阻氣能力。
本發明提出一種阻氣基板,其包括一可撓性基材、至少一第一無機阻氣層以及至少一第二無機阻氣層。可撓性基材具有一上表面。第一無機阻氣層配置於可撓性基材上且覆蓋上表面。第二無機阻氣層配置於第一無機阻氣層上且覆蓋第一無機阻氣層,其中第二無機阻氣層的水氧穿透速率低於第一無機阻氣層的水氧穿透速率。
在本發明之一實施例中,上述之可撓性基材包括一塑膠基材或一薄化玻璃基材。
在本發明之一實施例中,上述之第一無機阻氣層的材質包括氮化矽或氧化矽。
在本發明之一實施例中,上述之第一無機阻氣層的材質與第二無機阻氣層的材質相同。
在本發明之一實施例中,上述之第一無機阻氣層的厚
度大於第二無機阻氣層的厚度。
在本發明之一實施例中,上述之第二無機阻氣層的緻密度高於第一無機阻氣層的緻密度。
在本發明之一實施例中,上述之第一無機阻氣層的應力值小於第二無機阻氣層的應力值。
在本發明之一實施例中,上述之第一無機阻氣層的應力值介於-100MPa至200MPa之間。
在本發明之一實施例中,上述之第二無機阻氣層的應力值介於-300MPa至-700MPa之間。
在本發明之一實施例中,上述之第一無機阻氣層的水氧穿透速率(water vapor and oxygen transmission rate,WVTR)介於0.1g/m2
/day至1g/m2
/day之間。
在本發明之一實施例中,上述之第二無機阻氣層的水氧穿透速率介於0.1g/m2
/day至0.01g/m2
/day之間。
在本發明之一實施例中,上述之阻氣基板更包括:一黏著層,配置於第二無機阻氣層上,且覆蓋第二無機阻氣層。
在本發明之一實施例中,上述之至少一第一無機阻氣層為多個第一無機阻氣層,而第一無機阻氣層與第二無機阻氣層交替堆疊於可撓性基材上。
基於上述,由於在可撓性基材上配置有具有不同水氧穿透速率之第一無機阻氣層及第二無機阻氣層,因此本發明的實施例之阻氣層結構除了可具有較佳之阻隔水氣與氧氣的能力外,亦可具有可撓曲性。
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1繪示為本發明之一實施例之一種阻氣基板的剖面示意圖。請參考圖1,在本實施例中,阻氣基板100a包括一可撓性基材110、至少一第一無機阻氣層120a(圖1A中僅示意地繪示一層)以及至少一第二無機阻氣層130(圖1A中僅示意地繪示一層)。
詳細來說,可撓性基材110具有一上表面112,其中可撓性基材110例如是一塑膠基材或一薄化玻璃基材。第一無機阻氣層120a配置於可撓性基材110上且覆蓋上表面112。第二無機阻氣層130配置於第一無機阻氣層120a上且覆蓋第一無機阻氣層120a,其中第二無機阻氣層130的水氧穿透速率低於第一無機阻氣層120a的水氧穿透速率。較佳地,本實施例之第一無機阻氣層120a的水氧穿透速率(water vapor transmission rate,WVTR)介於0.1g/m2
/day至1g/m2
/day之間,而第二無機阻氣層130的水氧穿透速率介於0.1g/m2
/day至0.01g/m2
/day之間。
更具體來說,在本實施例中,第一無機阻氣層120a的材質例如是氮化矽或氧化矽,且第二無機阻氣層130的材質與第一無機阻氣層120a的材質實值上相同。也就是說,第二無機阻氣層130的材質亦例如是氮化矽或氧化矽。特別是,本實施例之第一無機阻氣層120a的厚度H1
實質上大於第二無機阻氣層130的厚度H2,較佳地,第一無機阻氣層120a的厚度H1為100奈米(nm)至500奈米(nm),而第二無機阻氣層130之厚度H2為第一無機阻氣層120a之厚度H1的0.1倍至0.5倍。
再者,第二無機阻氣層130的緻密度高於第一無機阻氣層120a的緻密度,也就是說,相較於具有較大厚度的第一無機阻氣層120a,具有較小厚度之第二無機阻氣層130的膜質較為緻密(即較硬)。換言之,厚度較厚的第一無機阻氣層120a的膜質較為鬆散(即柔軟)。此外,第一無機阻氣層120a的應力值小於第二無機阻氣層130的應力值,較佳地,第一無機阻氣層120a的應力值例如是介於-100MPa至200MPa之間,而第二無機阻氣層130的應力值例如是介於-300MPa至-700MPa之間。其中,負號-代表壓縮應力,正號+代表拉伸應力,此後不再贅述。
由於本實施例是將具有不同水氧穿透速率之第一無機阻氣層120a與第二無機阻氣層130依序配置於可撓性基材110上,因此本實例之阻氣基板100a除了可具有較佳之阻隔水氣與氧氣的能力外,亦可具有可撓曲性。再者,由於具有較小厚度之第二無機阻氣層130的緻密度高於具有較大厚度之第一無機阻氣層120a的緻密度,因此於撓曲阻氣基板100a時,除了可以避免習知因過厚之無機層所產生之應力集中造成脆裂的問題外,當可撓性基材110的上表面112有損壞時,直接接觸可撓性基材110之上表面112的第一無機阻氣層120a也因其緻密度低於第二無機阻氣
層130而不易產生結構性的破壞。也就是說,此種第一無機阻氣層120a與第二無機阻氣層130的搭配設計亦可以使阻氣基板100a具有較佳的結構可靠度。此外,由於第二無機阻氣層130的水氧穿透速率低於第一無機阻氣層120a的水氧穿透速率,因此當水氣與氧氣由膜層中滲入時,可以避免水氣與氧氣在第一無機阻氣層120a與第二無機阻氣層130中大幅度地擴散,進而增加阻氣基板100a的產品可靠度。
圖2繪示為本發明之另一實施例之一種阻氣基板的剖面示意圖。本實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,本實施例不再重複贅述。請參考圖2,本實施例的阻氣基板100b與圖1之阻氣基板100a主要的差異是在於:本實施例之阻氣基板100b更包括一黏著層140,其中黏著層140配置於第二無機阻氣層130上且覆蓋第二無機阻氣層130。此處,黏著層140的目的在於增加後續形成於阻氣基板100b上之主動元件或被動元件(未繪示)與阻氣基板100b之第二無機阻氣層130兩者之間的結合力,其中,主動元件例如是薄膜電晶體。
圖3繪示為本發明之又一實施例之一種阻氣基板的剖面示意圖。本實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照
前述實施例,本實施例不再重複贅述。請參考圖3,本實施例的阻氣基板100c與圖1之阻氣基板100a主要的差異是在於:本實施例之阻氣基板100c具有多個第一無機阻氣層120a、120b(圖3中僅示意地繪示兩個),而這些第一無機阻氣層120a、120b與第二無機阻氣層130交替堆疊於可撓性基材110上。如圖3所示,第二無機阻氣層130是位於這兩個第一無機阻氣層120a、120b之間。
值得一提的是,本發明並不限定第一無機阻氣層120a、120b與第二無機阻氣層130的層數,雖然此處所提及的第一無機阻氣層120a、120b具體化為兩層,而第二無機阻氣層130具體化為一層。但,於其他未繪示的實施例中,第一無機阻氣層120a、120b與第二無機阻氣層130的層數及排列方式,端視所需之阻水氣及氧氣的程度而定,於此並不加以限制。
圖4繪示為本發明之再一實施例之一種阻氣基板的剖面示意圖。本實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,本實施例不再重複贅述。請參考圖4,本實施例的阻氣基板100d與圖3之阻氣基板100c主要的差異是在於:本實施例之阻氣基板100d可更包括一黏著層140,其中黏著層140配置於第一無機阻氣層120b上且覆蓋第一無機阻氣層120b。此處,黏著層140的目的在於增加後續形成於阻氣基板100d上之主動元件或被動元件(未
繪示)與阻氣基板100d之第一無機阻氣層120b兩者之間的結合力,其中,主動元件例如是薄膜電晶體。
綜上所述,由於本發明的實施例是將具有不同水氧穿透速率之第一無機阻氣層與第二無機阻氣層依序配置於可撓性基材上,因此本發明的實施例之阻氣基板除了可具有較佳之阻隔水氣與氧氣的能力外,亦可具有可撓曲性。再者,由於具有較小厚度之第二無機阻氣層的緻密度高於具有較大厚度之第一無機阻氣層的緻密度,因此於撓曲阻氣基板時,除了可以避免習知因過厚之無機層所產生之應力集中造成脆裂的問題外,當可撓性基材的上表面有損壞時,直接接觸可撓性基材之上表面的第一無機阻氣層也因其緻密度低於第二無機阻氣而不易產生結構性的破壞。也就是說,此種第一無機阻氣層與第二無機阻氣層的搭配設計亦可以使阻氣基板具有較佳地結構可靠度。此外,由於第二無機阻氣層的水氧穿透速率低於第一無機阻氣層的水氧穿透速率,因此當水氣與氧氣由膜層中滲入時,可以避免水氣與氧氣在第一無機阻氣層與第二無機阻氣層中大幅度地擴散,進而增加阻氣基板的產品可靠度。另外,由於阻氣基板亦可更包括黏著層,因此可有效增加阻氣基板與後續形成於其上之元件兩者之間結合力。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100a、100b、100c、100d‧‧‧阻氣基板
110‧‧‧可撓性基材
112‧‧‧上表面
120a、120b‧‧‧第一無機阻氣層
130‧‧‧第二無機阻氣層
140‧‧‧黏著層
H1、H2‧‧‧厚度
圖1繪示為本發明之一實施例之一種阻氣基板的剖面示意圖。
圖2繪示為本發明之另一實施例之一種阻氣基板的剖面示意圖。
圖3繪示為本發明之又一實施例之一種阻氣基板的剖面示意圖。
圖4繪示為本發明之再一實施例之一種阻氣基板的剖面示意圖。
100a‧‧‧阻氣基板
110‧‧‧可撓性基材
112‧‧‧上表面
120a‧‧‧第一無機阻氣層
130‧‧‧第二無機阻氣層
H1、H2‧‧‧厚度
Claims (13)
- 一種阻氣基板,包括:一可撓性基材,具有一上表面;至少一第一無機阻氣層,配置於該可撓性基材上,且覆蓋該上表面;以及至少一第二無機阻氣層,配置於該第一無機阻氣層上,且覆蓋該第一無機阻氣層,其中該第二無機阻氣層的水氧穿透速率低於該第一無機阻氣層的水氧穿透速率。
- 如申請專利範圍第1項所述之阻氣基板,其中該可撓性基材包括一塑膠基材或一薄化玻璃基材。
- 如申請專利範圍第1項所述之阻氣基板,其中該第一無機阻氣層的材質包括氮化矽或氧化矽。
- 如申請專利範圍第3項所述之阻氣基板,其中該第一無機阻氣層的材質與該第二無機阻氣層的材質相同。
- 如申請專利範圍第1項所述之阻氣基板,其中該第一無機阻氣層的厚度大於該第二無機阻氣層的厚度。
- 如申請專利範圍第1項所述之阻氣基板,其中該第二無機阻氣層的緻密度高於該第一無機阻氣層的緻密度。
- 如申請專利範圍第1項所述之阻氣基板,其中該第一無機阻氣層的應力值小於該第二無機阻氣層的應力值。
- 如申請專利範圍第7項所述之阻氣基板,其中該第一無機阻氣層的應力值介於-100MPa至200MPa之間。
- 如申請專利範圍第7項所述之阻氣基板,其中該第二無機阻氣層的應力值介於-300MPa至-700MPa之間。
- 如申請專利範圍第1項所述之阻氣基板,其中該第一無機阻氣層的水氧穿透速率介於0.1g/m2 /day至1g/m2 /day之間。
- 如申請專利範圍第1項所述之阻氣基板,其中該第二無機阻氣層的水氧穿透速率介於0.1g/m2 /day至0.01 g/m2 /day之間。
- 如申請專利範圍第1項所述之阻氣基板,更包括:一黏著層,配置於該第二無機阻氣層上,且覆蓋該第二無機阻氣層。
- 如申請專利範圍第1項所述之阻氣基板,其中該至少一第一無機阻氣層為多個第一無機阻氣層,而該些第一無機阻氣層與該第二無機阻氣層交替堆疊於該可撓性基材上。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101126795A TWI477642B (zh) | 2012-07-25 | 2012-07-25 | 阻氣基板 |
CN201310077893.5A CN103579256B (zh) | 2012-07-25 | 2013-03-12 | 阻气基板 |
US13/831,988 US9399336B2 (en) | 2012-07-25 | 2013-03-15 | Gas barrier substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101126795A TWI477642B (zh) | 2012-07-25 | 2012-07-25 | 阻氣基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201404919A TW201404919A (zh) | 2014-02-01 |
TWI477642B true TWI477642B (zh) | 2015-03-21 |
Family
ID=49995168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101126795A TWI477642B (zh) | 2012-07-25 | 2012-07-25 | 阻氣基板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9399336B2 (zh) |
CN (1) | CN103579256B (zh) |
TW (1) | TWI477642B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106299153A (zh) * | 2016-10-10 | 2017-01-04 | 昆山工研院新型平板显示技术中心有限公司 | 一种薄膜封装方法及其结构 |
US10275062B2 (en) | 2016-10-14 | 2019-04-30 | Industrial Technology Research Institute | Flexible electronic device having barrier planarization layer including nitrogen-rich region and oxygen-rich region |
CN108448006B (zh) * | 2018-03-29 | 2021-01-22 | 京东方科技集团股份有限公司 | 封装结构、电子装置以及封装方法 |
KR20210031908A (ko) * | 2018-07-10 | 2021-03-23 | 넥스트 바이오메트릭스 그룹 에이에스에이 | 전자 장치용 열전도성 및 보호성 코팅 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1899815A (zh) * | 2005-07-11 | 2007-01-24 | 富士胶片株式会社 | 气体阻隔性薄膜、基材薄膜及有机电致发光元件 |
TW201143503A (en) * | 2010-05-31 | 2011-12-01 | Ind Tech Res Inst | Gas barrier substrate, package of organic electro-luminenscent device and fabricating method thereof |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2040682A1 (en) * | 1990-04-20 | 1991-10-21 | Bruce L. Booth | Moisture sealing of optical waveguide devices with doped silicon dioxide having a silicon monoxide undercoat |
US5085904A (en) * | 1990-04-20 | 1992-02-04 | E. I. Du Pont De Nemours And Company | Barrier materials useful for packaging |
US20010038894A1 (en) * | 2000-03-14 | 2001-11-08 | Minoru Komada | Gas barrier film |
US20040052975A1 (en) * | 2002-04-18 | 2004-03-18 | Minoru Komada | Barrier film and laminated material, container for wrapping and image display medium using the same, and manufacturing method for barrier film |
US20040121146A1 (en) * | 2002-12-20 | 2004-06-24 | Xiao-Ming He | Composite barrier films and method |
US7288311B2 (en) * | 2003-02-10 | 2007-10-30 | Dai Nippon Printing Co., Ltd. | Barrier film |
WO2005081333A2 (en) * | 2004-02-20 | 2005-09-01 | Oc Oerlikon Balzers Ag | Diffusion barrier layer and method for manufacturing a diffusion barrier layer |
KR101171192B1 (ko) | 2005-10-21 | 2012-08-06 | 삼성전자주식회사 | 박막트랜지스터 기판와 그 제조방법 |
JP5164465B2 (ja) * | 2007-07-27 | 2013-03-21 | 株式会社アルバック | 樹脂基板 |
JP5463168B2 (ja) * | 2010-03-04 | 2014-04-09 | 富士フイルム株式会社 | 成膜方法および成膜装置 |
KR101793047B1 (ko) * | 2010-08-03 | 2017-11-03 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 및 이의 제조 방법 |
JP2012096432A (ja) * | 2010-11-01 | 2012-05-24 | Sony Corp | バリアフィルム及びその製造方法 |
-
2012
- 2012-07-25 TW TW101126795A patent/TWI477642B/zh active
-
2013
- 2013-03-12 CN CN201310077893.5A patent/CN103579256B/zh active Active
- 2013-03-15 US US13/831,988 patent/US9399336B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1899815A (zh) * | 2005-07-11 | 2007-01-24 | 富士胶片株式会社 | 气体阻隔性薄膜、基材薄膜及有机电致发光元件 |
TW201143503A (en) * | 2010-05-31 | 2011-12-01 | Ind Tech Res Inst | Gas barrier substrate, package of organic electro-luminenscent device and fabricating method thereof |
Also Published As
Publication number | Publication date |
---|---|
TW201404919A (zh) | 2014-02-01 |
CN103579256A (zh) | 2014-02-12 |
US20140030494A1 (en) | 2014-01-30 |
US9399336B2 (en) | 2016-07-26 |
CN103579256B (zh) | 2017-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9252394B2 (en) | Organic light emitting display apparatus encapsulated with hydrophobic organic film and manufacturing method thereof | |
US10186683B2 (en) | Flexible organic light emitting diode display panel | |
KR101793047B1 (ko) | 플렉서블 디스플레이 및 이의 제조 방법 | |
TWI384583B (zh) | 擴散阻障層及製造擴散阻障層之方法 | |
TWI695462B (zh) | 薄膜封裝結構及具有其的顯示裝置 | |
US8461760B1 (en) | Thin film encapsulation for flat panel display device and method of manufacturing thin film encapsulation structure | |
US20120001534A1 (en) | Flat panel display device and method of manufacturing the same | |
TWI477642B (zh) | 阻氣基板 | |
EP3006597B1 (en) | Organic electroluminescent device | |
WO2016199739A1 (ja) | El表示装置及びel表示装置の製造方法 | |
JP2020505727A5 (zh) | ||
KR101465212B1 (ko) | 초극유연성 봉지 박막 | |
JP2005288851A (ja) | 透明ガス遮断性フィルム、並びにそれを用いるディスプレイ基板及びディスプレイ。 | |
US11482691B2 (en) | Display panel and manufacturing method thereof | |
US9259895B2 (en) | Flexible substrate and method of manufacturing the same | |
US20120114910A1 (en) | Flexible gas barrier film, method for preparing the same, and flexible display device using the same | |
US11943954B2 (en) | Encapsulation structure and encapsulation method for flexible organic light-emitting diode device | |
CN105789473A (zh) | 柔性衬底及其制备方法 | |
WO2022188193A1 (zh) | 一种显示面板及其制备方法 | |
KR102195384B1 (ko) | 패시베이션 유기발광소자 및 이를 구비한 폴더블 디스플레이 | |
KR102351069B1 (ko) | 투습 방지 보호막 및 이의 제조 방법 | |
KR102127463B1 (ko) | 투명 플렉시블 유기전자소자용 봉지 구조체 | |
CN114068837A (zh) | 薄膜封装结构及其制备方法、发光器件和显示装置 | |
KR20120010888A (ko) | 투습방지기능 및 내열성이 향상된 플렉서블 기판과, 그 제조방법 | |
JP2006095784A (ja) | 透明ガスバリア性フィルム |