JPS6467824A - Forming device for oxide superconducting material - Google Patents

Forming device for oxide superconducting material

Info

Publication number
JPS6467824A
JPS6467824A JP62223674A JP22367487A JPS6467824A JP S6467824 A JPS6467824 A JP S6467824A JP 62223674 A JP62223674 A JP 62223674A JP 22367487 A JP22367487 A JP 22367487A JP S6467824 A JPS6467824 A JP S6467824A
Authority
JP
Japan
Prior art keywords
space
thin film
oxide superconducting
gas
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62223674A
Other languages
Japanese (ja)
Other versions
JPH0556282B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP62223674A priority Critical patent/JPS6467824A/en
Publication of JPS6467824A publication Critical patent/JPS6467824A/en
Publication of JPH0556282B2 publication Critical patent/JPH0556282B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)

Abstract

PURPOSE:To form a thin film at a low temperature by providing a means to feed a reactive gas and an oxide gas to a space with an interaction between the electric field and magnetic field and a means with a plane on which an oxide superconducting material is formed. CONSTITUTION:A plasma generating space 31 kept at the atmospheric temperature or the decompression state, an auxiliary space 12, electromagnets 15, 15' generating the magnetic field, their power source 35, a microwave oscillator 14, and a vacuum pump 26 constituting an exhaust channel are provided. This device is further constituted of a rotary pump 24, a pressure adjusting valve 19, a substrate holder 10', an object for film formation 10, a microwave guide window 39, gas channels 16, 17, water cooling channels 28, 28', a halogen lamp 20, a reflecting mirror 21, and a heating space 13. The object for thin film formation 10 is installed on the substrate holder 10' and arranged in the plasma generating space 31 from a gate valve 11. A polycrystalline oxide superconducting thin film can be thereby formed at the low substrate temperature of 200-500 deg.C.
JP62223674A 1987-09-07 1987-09-07 Forming device for oxide superconducting material Granted JPS6467824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62223674A JPS6467824A (en) 1987-09-07 1987-09-07 Forming device for oxide superconducting material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62223674A JPS6467824A (en) 1987-09-07 1987-09-07 Forming device for oxide superconducting material

Publications (2)

Publication Number Publication Date
JPS6467824A true JPS6467824A (en) 1989-03-14
JPH0556282B2 JPH0556282B2 (en) 1993-08-19

Family

ID=16801869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62223674A Granted JPS6467824A (en) 1987-09-07 1987-09-07 Forming device for oxide superconducting material

Country Status (1)

Country Link
JP (1) JPS6467824A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0288408A (en) * 1988-05-31 1990-03-28 Mitsubishi Metal Corp Production of superconducting ceramic film
JPH0288763A (en) * 1988-09-26 1990-03-28 Matsushita Electric Ind Co Ltd Thin film superconductor, method and apparatus for producing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI388078B (en) * 2008-01-30 2013-03-01 Osram Opto Semiconductors Gmbh Method for manufacturing electronic components and electronic components

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56109824A (en) * 1980-02-05 1981-08-31 Nippon Telegr & Teleph Corp <Ntt> Manufacture of oxide superconductive thin film
JPS5963732A (en) * 1982-10-04 1984-04-11 Hitachi Ltd Thin film forming device
JPS59219461A (en) * 1983-05-24 1984-12-10 Toshiba Corp Amorphous silicon film forming device
JPS60117711A (en) * 1983-11-30 1985-06-25 Toshiba Corp Forming apparatus of thin film
JPS61109036A (en) * 1984-11-01 1986-05-27 Canon Inc Display device of television lens
JPS61125133A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Low temperature plasma electromagnetic field control structure
JPS61267324A (en) * 1985-05-21 1986-11-26 Fuji Electric Co Ltd Dry thin film processing device
JPS62150726A (en) * 1985-12-24 1987-07-04 Fuji Electric Co Ltd Manufacture of semiconductor device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56109824A (en) * 1980-02-05 1981-08-31 Nippon Telegr & Teleph Corp <Ntt> Manufacture of oxide superconductive thin film
JPS5963732A (en) * 1982-10-04 1984-04-11 Hitachi Ltd Thin film forming device
JPS59219461A (en) * 1983-05-24 1984-12-10 Toshiba Corp Amorphous silicon film forming device
JPS60117711A (en) * 1983-11-30 1985-06-25 Toshiba Corp Forming apparatus of thin film
JPS61109036A (en) * 1984-11-01 1986-05-27 Canon Inc Display device of television lens
JPS61125133A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Low temperature plasma electromagnetic field control structure
JPS61267324A (en) * 1985-05-21 1986-11-26 Fuji Electric Co Ltd Dry thin film processing device
JPS62150726A (en) * 1985-12-24 1987-07-04 Fuji Electric Co Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0288408A (en) * 1988-05-31 1990-03-28 Mitsubishi Metal Corp Production of superconducting ceramic film
JPH0288763A (en) * 1988-09-26 1990-03-28 Matsushita Electric Ind Co Ltd Thin film superconductor, method and apparatus for producing same

Also Published As

Publication number Publication date
JPH0556282B2 (en) 1993-08-19

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