JPS61125133A - Low temperature plasma electromagnetic field control structure - Google Patents

Abstract

PURPOSE:To create a thin film without defect of excellent quality by a method wherein a plasma particle flow, which drifts in a selected direction along an operating substrate, is produced and then plasma incident angle on the operating substrate is made to possess constant directivity. CONSTITUTION:Low temperature plasma 12 of stock gas injected from a supply tube 9, 10 is created by the means that electron cyclotron resonance is generated caused by a magnetic field coil 7 disposed to outside periphery of a plasma creating chamber 1 and microwave 8 supplied from a wave guide 6. The low temperature plasma introduced to a reaction chamber 2 is subjected to Lorentz force F produced by magnetic field Bz in an axis direction impressed by a control magnetic field coil 26 on the surface of an operation substrate 4, i.e., (z) direction, and electric field Er in a direction crossing at right angle for the axis impressed by an electric field electrode 25, i.e., (r) direction and the said plasma is drifted while holding directivity in crossing at right angle to the magnetic field Bz and electric field Er.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a low-temperature plasma electromagnetic field control mechanism, and particularly to a low-temperature plasma electromagnetic field control mechanism for controlling low-temperature plasma generated for four-layer production or etching using an electromagnetic field. Regarding.

[Background of the invention]

In recent years, as surface treatment equipment for semiconductor thin film production, etc., in order to improve performance such as film uniformity, film formation speed, and surface treatment speed,
Methods that utilize low-temperature plasma of ionized or excited polyatomic molecules, compounds, etc. are widely used.

FIG. 7 shows a conventional peninsular thin film lining device published on page 118 of Applied Physics, Vol. 52, No. 2 (1983).

The inside of the container, which is evacuated through the exhaust pipe 11, forms a plasma generation chamber 1 and a reaction chamber 2 by the plasma extraction window 5. At the outer periphery of plasma generation chamber 1.

A magnetic field coil 7 is arranged, and the cyclotron resonates with the microwave 8 supplied from the waveguide 6 to generate a low-temperature plasma 12 of the material gas injected from the supply pipes 9 and 10.Reaction. A substrate mount 3 is provided below the plasma extraction window 5 of the chamber 2, and a work base 4 is fixed on the substrate mount 3.The low-temperature plasma 12 +'!, plasma in the plasma generation chamber 1 It is drawn out into the reaction chamber 2 through the draw-out window 5, and a thin film is formed or etched on the work substrate 4.

However, such a conventional device has problems due to the free diffusion of low-temperature plasma onto the work substrate 4, and the problems in the case of thin film formation are shown in Figure 8, and the problems in the case of etching are shown in Figure 9. This will be explained using figures.

In FIG. 8, a wiring material 14 is wired on a substrate material 13,
A case is shown in which an insulating film 15 is formed thereon by plasma 12 of an insulating material gas. As explained with reference to FIG. 7, since the low-temperature plasma 12 is free-diffusion, it is difficult to fill the recess 16 in which there is no wiring material 14, resulting in the formation of overhangs or void defects.

FIG. 9 shows the case of etching for wiring the wiring material 14 on the substrate material 13. A mask pattern is created using a photosensitive material 17 on the wiring material 14 uniformly formed on the substrate material 13, and in this state, unnecessary wiring material is scraped off using low temperature etching plasma 12. . At this time, since the low temperature plasma 12 is free diffusion,
This has the drawback of causing problems such as undercutting (over-shaving).

[Purpose of the invention]

An object of the present invention is to provide a low-temperature plasma MS field control mechanism that is capable of producing a defect-free, high-quality 14 film and performing surface treatments such as etching.

[Summary of the invention]

The present invention applies a predetermined electric field and magnetic field to the generated low-temperature plasma on the surface of a work substrate to create a plasma flow that drifts in one arbitrary direction along one work substrate, and maintains a constant angle of incidence of the plasma toward the work substrate. It is characterized by having the directivity of

[Embodiments of the invention]

Embodiments of the present invention will be described below with reference to the drawings.

As shown in FIG. 1, the magnetic field coil 7 arranged around the outer periphery of the plasma generation chamber 1 causes electron cyclotron resonance with the microwave 8 supplied from the waveguide 6, and the supply pipe 9. A low temperature plasma 12 of material gas injected from IO is generated. This is the same as the conventional example described above. A control magnetic field coil is arranged around the outer periphery of the reaction chamber 2 as a magnetic field generating means so that the strength of the magnetic field can be controlled. A board mount 3 is arranged in the reaction chamber container section so as to be substantially orthogonal to the direction of the magnetic field of the control magnetic field coil station, and a work board 4 is mounted on this board mount 3.
is fixed. Between the reaction chamber vessel ρ and the control magnetic field coil, electric field electrodes δ are arranged as shown in FIG. [1] is connected to the source 28 to constitute an electric field generating means.

One low-temperature plasma guided into the reaction chamber 2, a magnetic field B applied in the axial direction, that is, two directions, applied by the control magnetic field coil 28, and a magnetic field perpendicular to the axis, that is, Y, applied by the electric field electrode on the surface of the work substrate 40. The electric field in the direction f! It receives the Lorentz force F (= Wr x Bg (vector product)) due to the magnetic field Bs and the electric field Er, and drifts with directionality in the direction perpendicular to the magnetic field Bs and the electric field Er. If an AC power source or a DC power source whose polarity is reversed at predetermined intervals is used as the power source of the electric field electrode 5, a reciprocating drift will occur on the surface of one work substrate 40. Further, the direction of the drift can be controlled by operating the switch means between the electric field electrode 5 and the electrode blade, or by rotating the substrate mount 3 in a direction not shown in the circumferential direction, that is, in the θ direction. When such a configuration is applied to a configuration in which uneven wiring or a film shape is perpendicular to the work substrate 4 as shown in FIG.
, it is possible to drift the low temperature plasma in the Y direction.

The results of this drift can be seen microscopically in Figures 4 and 5.
As shown in the figure.

FIG. 4 shows a case where the above-mentioned low temperature plasma electromagnetic field control mechanism is used for thin film production, in which a wiring material 14 is wired on a substrate material 13 and is insulated by a low temperature plasma 12 of an insulating material gas. A film 15 is produced. Wiring material 14
When the switch means shown in FIG. 2 is switched or the board mounting base 3 or the electric field electrode δ is controlled to rotate so that the low temperature plasma 12 drifts in the direction 20 perpendicular to the groove between them, the wiring material 14 drifts as shown in FIG. It is possible to embed a large film thickness on one side wall, that is, the wall on the side opposite to the drift direction. Next, after a suitable period of time, the polarity of the power supply is reversed or the board mount 3 is rotated 180 degrees. Then, the drift direction of the low-temperature plasma 12 is changed by 1180 degrees, and the wall on the other side is made to have a film thickness of 19 degrees, as shown by the dotted line in the figure.
The film can be formed as follows. In this way, the filling properties of the recessed grooves between the wiring materials 14 are improved, and a film can be formed without defects such as overhangs or voids.

Figure 5 shows the aforementioned low-temperature plasma! This shows a case where the magnetic field control mechanism is used for etching, and is an example of etching in which wiring material 14 is wired on substrate material 13. The wiring material 14 uniformly formed on the substrate material 13 is transferred to the photosensitive material 17.
When etching according to the mask pattern, the second
The switch means shown in the figure is switched or the rotation of the substrate mount 3 or the electric field electrode δ is controlled. Then, the photosensitive material 17 is etched along the mask pattern, resulting in etching without any undercuts or the like.

FIG. 6 shows a low-temperature plasma electromagnetic field according to another embodiment.

The control mechanism is shown in Fig. 1, in which a substrate mount 3 and an electrode 4 are arranged facing each other, and a source 4 is connected between them. There is. This'riLI2@A can control the strength of the electric field 1c#
It has been made. A control field coil J that can control the strength of the magnetic field is arranged outside the container 4. It's been warmed up.

Exhaust is performed from the exhaust port n to bring the inside of the container 64 to the true value, and a predetermined voltage is applied between the board mount 3 and the IT pole 4 to obtain an alternating current electric field Es in two directions. A control magnetic field coil field is applied in the r direction that is approximately perpendicular or oblique to this electric field E.
When the field Br is applied, the low-temperature plasma of the material gas injected from the supply pipe 9 is exposed to the electric field on the surface of the work base 40,
It drifts with the force of gF=EixBr (vector product) in the direction directly opposite to the magnetic field BrK. Therefore, the control magnetic field coil (9
) is rotatably formed around the outer periphery of the container n to control the direction of the magnetic field Br, the effects similar to those of the previous embodiment and (11J) can be obtained.

As can be seen from the description of each of the above embodiments, the present invention may be implemented in such a way that low temperature plasma generation and reaction are performed in a vacuum container.

The plasma generation chamber and the reaction chamber can be separated or can be used as one chamber. In addition, in order to change the drift direction according to the work board 4 and location 4, the board mounting stand 3 and the electric field electrode 5
The control magnetic field coil blade was configured to be adjustable in position,
It may be configured as a mechanism that selects the direction of the Lorentz force due to the magnetic field and electric field that are orthogonal to each other.

〔Effect of the invention〕

As explained above, the present invention provides a means for generating a magnetic field and a means for generating an electric field in a substantially orthogonal relationship.

Since a low temperature plasma electromagnetic field control mechanism is constructed from a mechanism for selecting the direction of the Lorentz force caused by these magnetic fields and electric fields, it is possible to form a directional low temperature plasma particle flow, and it is possible to avoid overhanging parts in thin film formation, etching, etc. It is possible to perform high-quality surface treatment by eliminating defects such as 9-gap defects and undercuts.

[Brief explanation of drawings]

FIG. 1 is a longitudinal cross-sectional view of a low-temperature plasma electromagnetic field control mechanism according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the -ff line in FIG. 1, and FIG. 4 and 5 are enlarged cross-sectional views of the substrate when the low-temperature plasma electromagnetic field control mechanism shown in FIG. 1 is used for thin film production and etching, and FIG. 6 is a plan view of a working substrate shown in FIG. A vertical cross-sectional view of a low-temperature plasma 1iLFtii field control mechanism according to an example.
FIG. 2 is an enlarged cross-sectional view of a substrate when the apparatus shown in the figure is applied to thin film formation and etching. 1...Plasma generation chamber, 2...Reaction chamber, 3...Substrate mounting stand, 4...Working board, 5...Electric field electrode. Ah... control magnetic field coil, ah...' taste. Figure 4 Figure 5 Figure 6 Figure 17

Claims (1)

[Scope of Claims] 1. In a device configured to generate low-temperature plasma in a vacuum container, a means for generating a magnetic field for the low-temperature plasma, and a magnetic field substantially orthogonal to the magnetic field generated by the magnetic field generating means. A low temperature plasma electromagnetic field control mechanism, comprising means for generating an electric field, and a mechanism for selecting the direction of Lorentz force caused by the magnetic field and the electric field. 2. The electric field generating means described in claim 1 above is characterized in that the electric field generating means comprises at least one pair of electrodes and a power supply that applies a voltage with polarity changed between the electrodes. A low-temperature plasma electromagnetic field control mechanism.