200402793 玖、發明說明： 【發明所屬之技術區域】 本發明係關於一種電漿處理裝置，特別是關於一種利用 藉由將微波導入室内所形成的電漿生成區域對基板施以一 定處理之電漿處理裝置。 【先前技術】 近年，伴隨半導體裝置之高密度化及微細化，於半導體 裝置之製程中，為實施成膜、蝕刻、灰化等處理而使用竜 漿處理裝置。特別是於使用微波而讓電漿產生之微波電漿 處理裝置中，即使於約0.1〜10 Pa之壓力較小（高真空）條件 下，亦可穩定地使電漿產生。因此，例如使用頻率為2.45 GHz之微波之微波電漿處理裝置受到注目。 說明關於這種先前電漿處理裝置。如圖6所示，電漿處理 裝置係具有收容基板115而實施一定處理之室1〇1、產生微 波之高頻率電源109、將微波導入到電漿處理裝置之導波管 119、及將微波放射於室1〇1之天線部1〇7。 天線部107係具有於導波管119下端被接續之金屬製之輻 射狀導波路l〇7a及覆蓋輻射狀導波路1〇7下端開口之圓板 狀之狹缝天線l〇7b。於狹縫天線丨〇7b上方之與導波管119對 向之位置上，設置有為執行調整阻抗之凸出部1 〇8。又，於 導波路107a内存在有大氣。 狹缝天線1 〇7b係由例如厚度為〇· 1 mm至數mm程度之銅 度而形成。於狹缝天線l〇7b設置有為將微波向室101内放射 之複數狹缝（開口部）。 84684.doc -5 - 200402793 於室101之上方，配置有構成室101之隔壁一部分之頂板 105。頂板115係由例如石英等之介電體形成。於頂板ι〇5與 室101之隔壁之間，設置有例如〇型環等之密封配件113。天 線邵107於頂板105上方隔有一定間隔被配置，於天線部1〇7 與頂板105之間，形成空氣層12〇。 於室101内设置有為保持基板115之基座103。於此基座 103接績有偏壓用南頻電源in。再者，於室内，安裝有 將室101内排氣用之真空泵（未圖示）。 於上述之電漿裝置中，利用真空泵將室101内排氣，作為 於一定壓力範圍下生成電漿用之氣體，將例如氬氣導入室 101 内。 由高頻電源109產生之TE11模式之微波，利用圓極化波轉 換器（未圖示）讓其於導波管U9軸線周圍旋轉而在導波管 119傳導，到達天線部1〇7之輻射狀導波路1〇7&。 到達輕射狀導波路1 〇7a之微波向輻射狀導波路1 〇7a之周 緣方向傳播。向周緣之方向傳播之微波透過狹缝天線1〇7b 於室101内讓電磁場產生。 氬氣因產生於室101内的電磁場而解離，於基板丨丨5與頂 板105之間形成電漿生成區域，執行一定之電漿處理。 但於先前之電漿處理裝置中具下之問題點。首先，到達 輕射狀導波路l〇7a而向輻射狀導波路107a之周緣方向傳播 心微波被輻狀導波路107a之内周面反射，於輻狀導波路 107a内形成有第1駐波。 又’由於由狹縫天線l〇7b被放射之微波與微波被生成於 84684.doc 200402793 室101内電漿生成區域反射而回來之微波的相互結合，因此 於頂板105與空氣層120之區域内形成第2駐波。 室101内之電漿生成區域成為由上述之第1駐波與第2駐 波之相互結合所維持。此時，於第1駐波與第2駐波之相互 結合較弱之時，於電漿生成區域之維持上，第2駐波之影響 有支配控制之傾向。 另一方面，此第2駐波有基於室1〇1内之壓力、導入室内 之氣體之種類、或供給之電力量等之製程條件而容易變動 之傾向。 且說，如圖6所示，第1駐波係取波於輻射狀導波路i〇7a 之内徑PA與被供給之微波模式所形成，而第2駐波係取決於 頂板105、空氣層120位置之區域之内徑pb與電漿之狀況所 形成。 再者’於第2駐波之形成上，由於被電漿生成區域反射而 回來之微波亦有關，所以亦取決於電漿生成區域之大小。 電漿生成區域之大小被室1〇1之内徑PC限制。因此，第2駐 波亦取決於室101之内徑PC所形成。 但是於過去之電漿處理裝置，輻射狀導波路1〇7&之内徑 PA’頂板1〇5與空氣層120位置之區域之内徑pb，以及室1〇1 之内徑PC被任意設定，故隨各pa、pb、PC之尺寸，於電漿 生成區域之維持上，第2駐波之影響有時具支配性。 如上述’第2駐波容易隨室1〇1内之愿力等製程條件變動 。因此，於電漿生成區域之維持上，若如此不安定之第2駐 波之影響具支配性，控制形成電漿生成區域用之電磁波變 84684.doc 200402793 為困難。 主若電磁場之控制變困難，於室⑻内會有電漿密度偏差之 情況。其結果，於基板面内的電漿處理程度會產生偏差， 例如有蝕刻速度或成膜速度偏差之問題。 【發明内容】 本發明係為解決上述之問題點而設置，其目的係提供一 種電漿處理裝置’其控制形成電漿生成區域之電磁場，形 成電漿密度均勻之電漿生成區域。 與本發明相關之電漿處理裝置，係用作將基板暴露於電 漿生成區域並施與一定處理，具有室、頂板部與天線部。 於室内收容基板。頂板部被配置於被導入室内之基板之上 万，構成室之隔壁之一部分。天線部藉由於室内供給高頻 電磁場，於室内之頂板部與基板部之間之區域内形成電漿 生成區域。其天線部含具一定内徑之輻射狀導波路。室於 頂板部與天線部位置之部分，具有一定之内徑。設其輻狀 導波路之内徑為A、頂板部與天線部位置之部分之内徑為B 、基於頂板部之介電常數與頂板部與天線部位置之部分之 空間之介電常數之合成介電常數之高冑電磁場之波長為^ 。則設定成大約滿足下式（Β_Α)/2=(λ〆2) · N。又，〇或 自然數。還有於此關係式中，；^/1〇程度之尺寸誤差被解釋 成滿足此關係。 基於此構造，藉由將各内徑設定成實質上滿足上述關係 ，於輻射狀導波内被形成之第丨駐波與於頂板部與天線部位 置之部分被形成之第2駐波之相位一致，第丨駐波與第2駐注 84684.doc 200402793 之相互結合較過去之電漿處理裝置之情況強。基於此，於 電漿生成區域之形成維持上，第1駐波之影響具有支配性。 其結果為電漿生成區域之形成維持可由天線部加以控制， 因而降低電漿密度之偏差。 又，室於面臨電漿被形成之區域之部分具有一定之内後 ，若設定面臨電漿被形成之區域之部分内徑為C，則設定成 大約滿足下式A為佳。且於此關係式中，5^/10程度之尺 寸誤差亦被解釋成滿足此關係。 這是因為被認為内徑C較内徑A大之情況下，於室内被形 成之電漿生成區域會變更大，隨此電漿生成區域，頂板部 之介電常數與空間之介電常數之合成介電常數之值會與電 漿之狀況共同變化而不能滿足上述之關係，不能增強第1駐 波與第第2駐波之相互結合之故。 位於第2駐波被形成之區域之頂板部具體而言，以含石英 板等介電體為佳。 【實施方式】 說明與本發明之實施型態相關之電漿處理裝置。如圖1 所示，電漿處理裝置包含有：收容基板15而實行一定處理 之室1、產生微波用之高頻電源9、將微波導入到電漿處理 裝置用之導波管19及將微波放射入室1内用之天線部7。 天線部7具有於導波管19下端被接續之金屬製之輻射狀 導波路7a與被覆輻射狀導波路7a之下端開口之圓板狀之狹 縫天線7a。於狹縫天線7b上與導波管19呈相對之位置上設 置為碉整阻抗之凸出部8，又，於導波路7a内有大氣存在。 84684.doc -9- 200402793 狹缝天線7b係由例如〇· 1 mm至數mm程度之銅板等所形 成。於此狹縫天線7b設置將微波向著室1内放射之複數狹缝 (開口部）。 於室1之上方配置有構成室1之隔壁一部分之頂部5。頂板 5係由例如石英等所形成。頂板5與室1之隔壁之間，例如設 置有例如Ο型環等之密封配件13。天線部7於頂板5上方隔開 間隔被配置，於天線部7與頂板5之間形成空氣層20。 於室1内設置有為保持基板15用之基座3。於此基座3接續 有偏壓用之高頻電源11。再者，於室内1安裝置有將室1内 排氣用之真空泵（未圖示）。 於本電漿處理裝置，頂板5及天線部7位置之區域之内徑B 與輻射狀導波路7a之内徑A之差之一半長度成為頂板5及天 線邵7位置之區域之基於大氣（空氣層2〇)之介電常數與頂板 5之介電常數之合成介電常數的微波波長、之一半長度之 包含〇之自然整數倍。即，成為大約以下式表示之尺寸關係。 (Β-Α)/2=(λ§/2) · Ν (Ν: 〇或自然數） 再者，室1之内徑C比輻射狀導波路7&之内徑a短地被設 足，或如後述，内徑C與内徑A相同。又，於^^為〇之情況係 内徑A與内徑b實質上相等之情況。又，於上述之尺寸關係 式，Xg/l〇程度之尺寸誤差被解釋成滿足此關係。 其次說明關於上述之電漿處理裝置之動作。首先，利用 真2泵將室1内排氣。作為於一定之壓力範圍下為生成電漿 之氣體，將例如氬氣導入室1内。 藉由高頻電源9,作為微波，產生圓極化波丁£11模式之微 84684.doc -10- 200402793 波。如圖2所示，TE11模式之微波利用於導波管19被設置之 圓極化波變換器（未圖示），作為微波21，其於導波管19之軸 線周圍依箭頭γ所示之方向被迴轉，在導波管19傳導，到達 輻射狀導波路7a。 到達輻射狀導波路7a之微波向輻射狀導波路7a之周邊方 向傳播。向周邊方向傳播之微波透過狹缝天線7b使室i内產 生電磁場。 氬氣因室1内產生之電磁場而離子化，於基板15與頂板5 <間形成電漿生成區域，將製程氣體離解，對於基板15進 行一定之電漿處理。 此時’如圖3所示’向輻射狀導波路γ a之周圍方向傳播之 微波被福射狀導波路7a之内周面反射，於輻射狀導波路7a 内形成第1駐波S1。 又’藉由被狹縫天線7b被放射之微波與此微波被室1内生 成< 電漿生成區域17反射而回來之微波相互結合，於頂板5 與天線部7位置之區域形成第2駐波S2。 於此笔水處理裝置，藉由上述之内徑A、内徑b以及微波 •^波長滿足上述之關係式，於頂板5及左線部7位置之區域 中對應於内徑B與内徑人之差之一半長度之部分L，於第2駐 波S2方面，貫質上形成波長、/2之自然數^^倍或者〇倍之駐 波二又，於圖3中，為簡單而以N為1，形成波長、/2之駐波。 尚且，被認為藉由室丨之内徑c與輻射狀導波路以之内徑 A貫質上相同’或比其短，就幾乎沒有因室工内所形成維持 之私滚生成區域17而頂板5與空氣層2〇位置之區域之大氣 84684.doc -11 · 200402793 介電常數與頂板5介電常數之合成介電常數值受到影響。 基於此，如圖3所示，於頂板5與空氣層20位置之區域， 於離中心長度A/2之位置P1上成為第2駐波S2之波節位在， 同時從離中心長度B/2之位置P2上亦成為波節位在。 另一面，於輻射狀導波路7a内之離中心長度A/2之位置P3 上成為弟1駐波S1之波節位在。 因此，駐波S1與駐波S2之相位差消失，成為兩駐波S1、 S2之相位一致。其結果，駐波S1與駐波“之相互結合與先 月i之電漿處理裝置情況相比為更強。因為駐波s丨與駐波S2 之相互結合變強，為了於室1内形成維持電漿生成區域17， 駐波S1之影響具支配性。 且說TE11模式之微波作為於導波管19之軸線周圍讓其被 旋轉之微波21，在導波舌19傳導，到達輻射狀導波路以之 故，如圖4所示，駐波81於輻射狀導波路”内依箭頭γ所示 之方向旋轉。因此，於輻射狀導波路7a内駐波S1之波節與 波腹呈略同心圓狀位在。 Q此於支配形成維持電漿生成區域17之形成之駐波si 藉由波郎與波腹主略同心圓狀位在，於室1内部可形成維 持具有略同心圓狀之電漿密度分布之電漿生成區域17。 即，為了形成維持電漿生成區域17，藉由於天線部7之輻 射狀導波路〜内被形成之駐波S1影響具支配性，就可利用 天線部7控制用作形成維持電漿生成區域17之電磁場。 因此，相較於過去之電漿處理裝置之情況，為不安定之 駐波S2所支配之電漿生成區域，於電漿生成區域17之電漿 84684.doc -12- 200402793 密度分布之偏差可被降低。 其結果，於基板15面内之電漿處理程度之偏差可被降低 ，可更加提高蝕刻或成長速度等之基板15面内之均勻性。 又，於上述之電漿處理裝置，已舉室丨之内徑c較輻射狀 導波路7a之内徑A短之情況為例加以說明，但如圖5所示， 即使係具有内徑C與内徑A實質上相同長度之電漿處理裝 置亦可。 於如此之電漿處理裝置之情況，由於被認為幾乎沒有因 室内被形成維持之電漿生成區域17而於頂板5與天線部7位 置之區域的合成介電常數值變化，所以亦可利用駐波S1 (天 線部7)控制電漿生成區域π。 再者，於室1之内徑C較輻射狀導波路7a之内徑A長之情 況，於室1内被形成維持之電漿生成區域17會更増大（例如 參照圖6)。 於此情況，被認為基於電漿生成區域之電漿狀態，於頂 板5與天線部7位置之區域的合成介電常數值變化。由於人 成介電常數值變化，波長值變化，上述之關係式變為 無法被滿足，因而無法加強駐波S1與駐波S2之相互結合。 其結果，利用駐波S1 (天線部）控制電漿生成區域17之形成 維持困難。 因此’於本電漿處理裝置，在滿足上述關係式之同時， 藉由室1之内徑C被設定為與輻射狀導波路7a之内徑A實質 上相同長度或比其短，可利用天線部7控制電漿生成區域17 ’電漿密度偏差降低而可更加提升於基板15面内之電聚處 84684.doc -13- 200402793 理之均勻。 此次所揭示之實施形態於所有之點均係例示，應被許為 其婦被限定者。本發明並非為上述之說明，而為專利申 請範圍所顯示，意圖是包與申請專利範圍均等之意義及在 範圍内之所有·變更。 產業上利用之可能生 本發明係關於一種電漿處理裝置’其利用藉由於室内， 導入微波形成之生成區域電漿，對基板施以㈣或成膜等 7定的電漿處理，可有效被適用於控制形成電漿生成區域 之電磁場提升電漿密度均一性之構造。 【圖式簡單說明】 圖1係本發明之實施形態之電槳處理裝置之剖面圖。 圖2係顯示於本實施形態中為說明電漿處理裝置之 之微波旋轉之圖。 圖3係顯不於本實施形態中為說明電漿處理裝置之動作 之駐波樣子之剖面圖。 圖4係顯不於本實施形態中為說明電漿處理裝置之動作 之於輕射狀導波路内旋轉之駐波之圖。 圖5係於本實施型態中關於變形例之電漿處理裝置之 面圖。 圖6係先前電漿處理裝置之剖面圖。 【圖式代表符號說明】 基座 3, 103 84684.doc 200402793 5, 105 頂板 7, 107 天線部 7a，107a 輻射狀導波路 7b， 107b 狹缝天線 8, 108 凸出部 9, 109 高頻電源 11 TE模式 13, 113 密封配件 * 15, 115 基板 17 電漿生成區域 19, 119 導波管 20, 120 空氣層 21 微波 Y 導波管19之軸線周圍之箭頭所示方向 A 輻射狀導波路7a之内徑 B 頂板5及天線部7位置之區域中之内徑 C 室1之内徑 L 内徑B與内徑A之差之一半長度之部分 SI 第1駐波 S2 第2駐波 111 偏壓用南頻電源 PA 輻射狀導波路107a之内徑 PB 頂板105與空氣層120位置之區域之内徑 PC 室101之内徑 84684.doc -15-200402793 发明 Description of the invention: [Technical area to which the invention belongs] The present invention relates to a plasma processing device, and in particular, to a plasma that applies a certain treatment to a substrate by using a plasma generation area formed by introducing microwaves into a room. Processing device. [Prior Art] In recent years, with the increase in density and miniaturization of semiconductor devices, a slurry processing device is used in the process of semiconductor device manufacturing to perform processes such as film formation, etching, and ashing. Especially in a microwave plasma processing device that uses a microwave to generate plasma, even under a low pressure (high vacuum) condition of about 0.1 to 10 Pa, the plasma can be stably generated. Therefore, for example, a microwave plasma processing apparatus using a microwave having a frequency of 2.45 GHz has attracted attention. A description is given of such a conventional plasma processing apparatus. As shown in FIG. 6, the plasma processing apparatus is provided with a chamber 101 for accommodating a substrate 115 and performing a certain process 101, a high-frequency power source 109 for generating microwaves, a waveguide 119 for introducing microwaves into the plasma processing apparatus, and It is radiated to the antenna part 107 of the room 101. The antenna portion 107 is a metal-made radial waveguide 107a connected to the lower end of the waveguide 119 and a circular plate-shaped slot antenna 107b covering the opening at the lower end of the radial waveguide 107. A protruding portion 108 for performing impedance adjustment is provided at a position above the slot antenna 147b opposite to the waveguide 119. There is an atmosphere in the guided wave path 107a. The slot antenna 107b is formed of copper having a thickness of approximately 0.1 mm to several mm, for example. The slot antenna 107b is provided with a plurality of slits (openings) for radiating microwaves into the chamber 101. 84684.doc -5-200402793 Above the chamber 101, a top plate 105 constituting a part of the partition wall of the chamber 101 is arranged. The top plate 115 is formed of a dielectric such as quartz. Between the top plate 05 and the partition wall of the chamber 101, a sealing fitting 113 such as an O-ring is provided. The antenna 107 is arranged above the top plate 105 at a certain interval, and an air layer 12 is formed between the antenna portion 107 and the top plate 105. A base 103 for holding the substrate 115 is provided in the chamber 101. The base 103 has a south frequency power source for bias voltage. A vacuum pump (not shown) for exhausting the inside of the chamber 101 is installed in the room. In the plasma apparatus described above, the inside of the chamber 101 is evacuated by a vacuum pump, and argon gas is introduced into the chamber 101 as a gas for generating plasma under a certain pressure range. The TE11 mode microwave generated by the high-frequency power source 109 is rotated around the U9 axis of the waveguide by a circularly polarized wave converter (not shown), and is conducted by the waveguide 119 to reach the antenna 107 radiation Shaped Guided Wave Path 107 & The microwaves reaching the light guide wave path 107a propagate in the circumferential direction of the radial guide wave path 107a. The microwave propagating in the direction of the periphery passes through the slot antenna 107b to generate an electromagnetic field in the chamber 101. The argon gas is dissociated due to the electromagnetic field generated in the chamber 101, and a plasma generating region is formed between the substrate 5 and the top plate 105, and a certain plasma treatment is performed. However, there are problems in the previous plasma processing equipment. First, it reaches the light guide wave path 107a and propagates toward the peripheral edge of the radial guide wave path 107a. The center microwave is reflected by the inner peripheral surface of the radial guide wave path 107a, and a first standing wave is formed in the radial guide wave path 107a. Also, because the radiated microwaves and microwaves generated by the slot antenna 107b are generated by 84684.doc 200402793, and the microwaves reflected by the plasma generation area in the room 101 are combined, they are in the area of the top plate 105 and the air layer 120. A second standing wave is formed. The plasma generating area in the chamber 101 is maintained by the combination of the first standing wave and the second standing wave described above. At this time, when the interaction between the first standing wave and the second standing wave is weak, the influence of the second standing wave tends to control the maintenance of the plasma generation region. On the other hand, this second standing wave tends to change easily based on process conditions such as the pressure in the chamber 101, the type of gas introduced into the chamber, or the amount of power supplied. Moreover, as shown in FIG. 6, the first standing wave system is formed by taking the inner diameter PA of the radiating guided wave path i07a and the supplied microwave mode, and the second standing wave system depends on the top plate 105 and the air layer 120. The inner diameter pb of the location area is formed by the condition of the plasma. Furthermore, in the formation of the second standing wave, since the microwaves reflected by the plasma generation area are also related, it also depends on the size of the plasma generation area. The size of the plasma generation area is limited by the inner diameter PC of the chamber 101. Therefore, the second standing wave also depends on the inner diameter PC of the chamber 101. However, in the conventional plasma processing device, the inner diameter pb of the area where the inner diameter of the radial waveguide 107 and the top plate 105 and the air layer 120 are located, and the inner diameter PC of the chamber 101 are arbitrarily set Therefore, with the size of each pa, pb, and PC, in the maintenance of the plasma generation area, the influence of the second standing wave is sometimes dominant. As described above, the second standing wave easily changes with the process conditions such as the willingness in the room 101. Therefore, in the maintenance of the plasma generation area, if the effect of such an unstable second standing wave is dominant, it is difficult to control the electromagnetic wave formation of the plasma generation area. 84684.doc 200402793 If the control of the electromagnetic field becomes difficult, there will be deviations in the plasma density in the chamber. As a result, variations in the degree of plasma processing in the substrate surface occur, such as a problem in that the etching rate or the film-forming rate varies. [Summary of the Invention] The present invention is provided to solve the above-mentioned problems, and the object thereof is to provide a plasma processing device 'which controls the electromagnetic field that forms a plasma generating region, and forms a plasma generating region with a uniform plasma density. The plasma processing apparatus related to the present invention is used for exposing a substrate to a plasma generating area and subjecting it to a certain treatment, and includes a chamber, a top plate portion, and an antenna portion. The substrate is housed indoors. The top plate portion is arranged above the substrate introduced into the room, and constitutes a part of the partition wall of the room. The antenna unit generates a plasma generation area in a region between the ceiling portion and the substrate portion of the room by supplying a high-frequency electromagnetic field in the room. The antenna section includes a radial guided wave path with a certain inner diameter. The portion of the chamber at the position of the top plate portion and the antenna portion has a certain inner diameter. Let the inner diameter of the radial waveguide be A, and the inner diameter of the portion where the top plate portion and the antenna portion are located, and the composition of the dielectric constant based on the dielectric constant of the top plate portion and the space between the portion of the top plate portion and the antenna portion. The dielectric constant is high and the wavelength of the electromagnetic field is ^. Then it is set to approximately satisfy the following formula (B_Α) / 2 = (λ〆2) · N. Also, 〇 or a natural number. Also in this relationship, a dimensional error of about ^ / 10 is interpreted to satisfy this relationship. Based on this structure, by setting each inner diameter to substantially satisfy the above-mentioned relationship, the phase of the second standing wave formed within the radiating guided wave and the second standing wave formed at the position of the top plate portion and the antenna portion are formed. Consistently, the combination of the first standing wave and the second standing note 84684.doc 200402793 is stronger than that of the past plasma processing equipment. Based on this, in the formation and maintenance of the plasma generation region, the influence of the first standing wave is dominant. As a result, the formation and maintenance of the plasma generation region can be controlled by the antenna section, thereby reducing variations in plasma density. In addition, after the chamber has a certain area facing the area where the plasma is formed, if the inside diameter of the area facing the area where the plasma is formed is set to C, it is better to set it to approximately satisfy the following formula A. And in this relationship, a size error of 5 ^ / 10 degree is also interpreted as satisfying this relationship. This is because when the inside diameter C is larger than the inside diameter A, the plasma generation area formed in the room will be changed. With this plasma generation area, the dielectric constant of the top plate portion and the dielectric constant of the space will change. The value of the combined dielectric constant changes with the condition of the plasma and cannot satisfy the above-mentioned relationship, and the mutual combination of the first standing wave and the second standing wave cannot be enhanced. Specifically, the top plate portion located in the region where the second standing wave is formed is preferably a dielectric material such as a quartz plate. [Embodiment] A plasma processing apparatus related to an embodiment of the present invention will be described. As shown in FIG. 1, the plasma processing apparatus includes: a chamber for accommodating the substrate 15 and performing a certain process 1. a high-frequency power source 9 for generating microwaves; a waveguide 19 for introducing microwaves into the plasma processing apparatus; An antenna section 7 for radiation into the room 1. The antenna section 7 has a metal-shaped radial waveguide 7a connected to the lower end of the waveguide 19 and a disk-shaped slot antenna 7a opened at the lower end of the covered radial waveguide 7a. A protruding portion 8 is provided at the slot antenna 7b as opposed to the waveguide 19, and has a trimming impedance, and an atmosphere exists in the waveguide 7a. 84684.doc -9- 200402793 The slot antenna 7b is formed of, for example, a copper plate of about 0.1 mm to several mm. A plurality of slits (openings) for radiating microwaves into the chamber 1 are provided on the slot antenna 7b. Above the chamber 1, a top portion 5 constituting a part of the partition wall of the chamber 1 is arranged. The top plate 5 is formed of, for example, quartz. Between the top plate 5 and the partition wall of the chamber 1, for example, a sealing fitting 13 such as an O-ring is provided. The antenna portion 7 is arranged at intervals above the top plate 5, and an air layer 20 is formed between the antenna portion 7 and the top plate 5. A pedestal 3 for holding the substrate 15 is provided in the chamber 1. A high-frequency power source 11 for biasing is connected to the base 3. Furthermore, a vacuum pump (not shown) for exhausting the inside of the room 1 is installed in the 1-room room. In this plasma processing device, the half diameter of the difference between the inner diameter B of the area where the top plate 5 and the antenna section 7 is located and the inner diameter A of the radial waveguide 7a becomes the area based on the atmosphere (air The microwave wavelength of the combined dielectric constant of the dielectric constant of the layer 20) and the dielectric constant of the top plate 5 is a natural integer multiple of 0 including a half length. That is, it becomes approximately a dimensional relationship represented by the following formula. (Β-Α) / 2 = (λ§ / 2) · Ν (N: 〇 or natural number) Furthermore, the inner diameter C of the chamber 1 is shorter than the inner diameter a of the radial waveguide 7 & Alternatively, as described later, the inner diameter C is the same as the inner diameter A. The case where ^^ is 0 is a case where the inner diameter A and the inner diameter b are substantially equal. Further, in the above-mentioned dimensional relationship expression, a dimensional error of about Xg / l0 is interpreted to satisfy this relationship. Next, the operation of the above-mentioned plasma processing apparatus will be described. First, the inside of the chamber 1 is exhausted by a true 2 pump. As a gas for generating plasma in a certain pressure range, for example, argon gas is introduced into the chamber 1. With the high-frequency power source 9 as a microwave, a circularly polarized wave of £ 11 mode is generated. 84684.doc -10- 200402793 wave. As shown in FIG. 2, the microwave of the TE11 mode is used in a circularly polarized wave converter (not shown) provided with the waveguide 19. As the microwave 21, it is indicated by the arrow γ around the axis of the waveguide 19. The direction is reversed and is conducted by the waveguide 19 to reach the radial waveguide 7a. The microwave reaching the radial waveguide 7a propagates toward the periphery of the radial waveguide 7a. The microwave propagating in the peripheral direction passes through the slot antenna 7b to generate an electromagnetic field in the chamber i. The argon gas is ionized by the electromagnetic field generated in the chamber 1, and a plasma generating area is formed between the substrate 15 and the top plate 5 <, the process gas is dissociated, and the substrate 15 is subjected to a certain plasma treatment. At this time, as shown in FIG. 3, the microwave propagating in the direction around the radial waveguide γa is reflected by the inner peripheral surface of the radiating waveguide 7a, and a first standing wave S1 is formed in the radial waveguide 7a. Furthermore, the microwave radiated by the slot antenna 7b and the microwave reflected by the plasma generation region 17 in the chamber 1 are combined with each other to form a second station in the region where the top plate 5 and the antenna portion 7 are located. Wave S2. In this water treatment device, with the above-mentioned inner diameter A, inner diameter b, and microwave wavelength, the above-mentioned relationship is satisfied, and the areas corresponding to the inner diameter B and the inner diameter in the area of the top plate 5 and the left line portion 7 In the second standing wave S2, a part L of a half-length difference forms a wavelength, a natural number of / 2 times ^^, or a standing wave of 0 times. In Fig. 3, N is used for simplicity. It is 1, forming a standing wave with a wavelength of / 2. Furthermore, it is considered that the inner diameter c of the chamber 丨 is substantially the same as or smaller than the inner diameter A of the radial waveguide, or there is almost no ceiling due to the private roll generation region 17 maintained and maintained in the room. The atmosphere in the area between 5 and the air layer 20 is 84684.doc -11 · 200402793 The combined dielectric constant value of the dielectric constant and the dielectric constant of the top plate 5 is affected. Based on this, as shown in FIG. 3, in the area where the top plate 5 and the air layer 20 are located, the node of the second standing wave S2 is located at the position P1 from the center length A / 2, and from the center length B / The position P2 of 2 also becomes the node position. On the other hand, at the position P3 at a distance A / 2 from the center in the radial waveguide 7a, the node of the standing wave S1 of the brother 1 is located. Therefore, the phase difference between the standing wave S1 and the standing wave S2 disappears, and the phases of the two standing waves S1 and S2 coincide. As a result, the mutual combination of the standing wave S1 and the standing wave "is stronger than that of the plasma processing apparatus of the previous month i. Because the mutual combination of the standing wave s 丨 and the standing wave S2 becomes stronger, in order to form maintenance in the chamber 1 In the plasma generating area 17, the influence of the standing wave S1 is dominant. Furthermore, the TE11 mode microwave is used around the axis of the waveguide 19 to be rotated by the microwave 21, and is transmitted through the waveguide 19 to the radiating guided wave path. Therefore, as shown in FIG. 4, the standing wave 81 rotates in the radial guided wave path ”in the direction indicated by the arrow γ. Therefore, the nodes and the antinodes of the standing wave S1 in the radial guided wave path 7a are located in a slightly concentric circle. The standing wave si that governs the formation and maintains the plasma generation region 17 is formed by the waves and antinodes in a substantially concentric circle, and a plasma density distribution with a slightly concentric circle can be maintained in the chamber 1 Plasmon generation area 17. That is, in order to form the sustaining plasma generation region 17, the influence of the standing wave S1 formed in the radiating waveguide ~ of the antenna portion 7 is dominant, so the antenna portion 7 can be used to control the formation of the sustaining plasma generation region 17 Electromagnetic field. Therefore, compared with the past plasma processing equipment, the plasma generation region dominated by the unstable standing wave S2, the plasma 84684.doc -12- 200402793 in the plasma generation region 17 can have a deviation in density distribution. Be lowered. As a result, variations in the degree of plasma processing in the surface of the substrate 15 can be reduced, and the uniformity in the surface of the substrate 15 such as etching or growth rate can be further improved. In the above plasma processing apparatus, the case where the inner diameter c of the chamber 丨 is shorter than the inner diameter A of the radial waveguide 7a has been described as an example, but as shown in FIG. 5, even if the inner diameter C and Plasma processing apparatuses having an inner diameter A having substantially the same length may also be used. In the case of such a plasma processing apparatus, it is considered that there is almost no change in the combined dielectric constant value of the area where the top plate 5 and the antenna portion 7 are located due to the plasma generation area 17 maintained and maintained in the room. The wave S1 (antenna section 7) controls the plasma generation region π. Furthermore, in the case where the inner diameter C of the chamber 1 is longer than the inner diameter A of the radial waveguide 7a, the plasma generation region 17 formed and maintained in the chamber 1 becomes larger (for example, refer to FIG. 6). In this case, it is considered that, based on the state of the plasma in the plasma generating region, the combined dielectric constant value in the region where the top plate 5 and the antenna portion 7 are located changes. As the artificial dielectric constant value changes and the wavelength value changes, the above-mentioned relational expression becomes unsatisfactory, so the mutual combination of the standing wave S1 and the standing wave S2 cannot be strengthened. As a result, it is difficult to control the formation and maintenance of the plasma generation region 17 using the standing wave S1 (antenna portion). Therefore, in the present plasma processing apparatus, while satisfying the above-mentioned relationship, the inner diameter C of the chamber 1 is set to be substantially the same as or shorter than the inner diameter A of the radial waveguide 7a, and an antenna can be used. The part 7 controls the plasma generation area 17 'The plasma density deviation is reduced and can be further raised at the electropolymerization place in the 15 plane of the substrate 84684.doc -13- 200402793 uniformity. The implementation form revealed this time is an example at all points, and should be promised to be a woman or a woman. The present invention is not the above description, but is shown by the scope of patent application. It is intended to cover the meaning of equality with the scope of patent application and all changes and changes within the scope. The present invention relates to a plasma processing device. The invention relates to a plasma processing device, which uses a plasma generated in a region formed by introducing microwaves in a room. The substrate is subjected to a predetermined plasma treatment such as tritium or film formation, which can be effectively used. It is suitable for controlling the electromagnetic field forming the plasma generating area to improve the structure of plasma density uniformity. [Brief Description of the Drawings] FIG. 1 is a sectional view of an electric paddle processing apparatus according to an embodiment of the present invention. Fig. 2 is a diagram illustrating microwave rotation of a plasma processing apparatus in this embodiment. Fig. 3 is a cross-sectional view showing the appearance of standing waves for explaining the operation of the plasma processing apparatus in this embodiment. Fig. 4 is a diagram showing a standing wave rotating in a light-radiated guided wave path for explaining the operation of the plasma processing apparatus in this embodiment. Fig. 5 is a front view of a plasma processing apparatus according to a modification example in this embodiment. Figure 6 is a sectional view of a conventional plasma processing apparatus. [Illustration of Symbols in Drawings] Base 3, 103 84684.doc 200402793 5, 105 Top plate 7, 107 Antenna section 7a, 107a Radial waveguide 7b, 107b Slot antenna 8, 108 Projection section 9, 109 High-frequency power supply 11 TE mode 13, 113 Sealing accessories * 15, 115 Substrate 17 Plasma generation area 19, 119 Waveguide tube 20, 120 Air layer 21 Microwave Y waveguide 19 Direction A shown by arrows around the axis A Radial waveguide 7a Inner diameter B In the area where the top plate 5 and the antenna section 7 are located C Inner diameter L of the chamber 1 Part of a half length of the difference between the inner diameter B and the inner diameter A SI First standing wave S2 Second standing wave 111 Offset The inner diameter PB of the radiating guided wave path 107a of the south frequency power supply PA The inner diameter of the area where the top plate 105 and the air layer 120 are located The inner diameter of the PC room 101 84684.doc -15-