JP2000243707A - Plasma treatment method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma treatment method and an apparatus with which uniform plasma can be generated. SOLUTION: In this plasma treatment method, an evacuation device is evacuated using a pump 3, while the prescribed gas is being introduced into a vacuum container 1, where a plasma trap 9 is provided, from a gas feeding device 2. While inside the vacuum container 1 is maintained in a prescribed pressure, uniform plasma is generated in the vacuum container 1 by applying high-frequency power of 100 MHz to a counter electrode 5 from a counter electrode high-frequency power source 4, the plasma treatments such as etching, deposition and surface modification, etc., can be performed uniformly on the substrate 7 placed on a substrate electrode 6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method and apparatus for dry etching, sputtering, plasma CVD, etc., used for manufacturing electronic devices such as semiconductors and micromachines, and more particularly, to a VHF band or UHF band.
The present invention relates to a plasma processing method and apparatus using plasma excited using high-frequency power in a band.

[0002]

2. Description of the Related Art Japanese Patent Application Laid-Open No. 8-83696 describes the importance of using high-density plasma in order to cope with miniaturization of electronic devices such as semiconductors. Low electron temperature plasma, which has high electron temperature and low electron temperature, has attracted attention.

[0003] Strongly negative gases such as Cl ₂ and SF ₆
In other words, when a gas that easily generates negative ions is turned into plasma, when the electron temperature is about 3 eV or less, a larger amount of negative ions is generated than when the electron temperature is high. Utilizing this phenomenon, it is possible to prevent an abnormal etching shape called a notch, which is caused by the accumulation of positive charges at the bottom of the fine pattern due to excessive incidence of positive ions. It can be carried out.

Further, CxFy and CxHy generally used when etching an insulating film such as a silicon oxide film are used.
When a gas containing carbon and fluorine such as Fz (x, y, and z are natural numbers) is plasmatized, when the electron temperature becomes about 3 eV or less, the dissociation of the gas is suppressed as compared to when the electron temperature is high. Generation of atoms, F radicals, and the like is suppressed. Since F atoms, F radicals, and the like have a high silicon etching rate, the lower the electron temperature, the higher the etching selectivity with respect to silicon.

When the electron temperature becomes 3 eV or less, the ion temperature and the plasma potential also decrease.
D can reduce ion damage to the substrate.

[0006] As a technique capable of generating plasma having a low electron temperature, attention is currently paid to a VHF band or a UHF band.
It is a plasma source that uses high-frequency power in the band.

FIG. 15 is a sectional view of a two-frequency excitation type parallel plate type plasma processing apparatus. In FIG. 15, a predetermined gas is introduced from a gas supply device 2 into a vacuum vessel 1 and exhausted by a pump 3 as an exhaust device. When high-frequency power of 100 MHz is supplied to the counter electrode 5, plasma is generated in the vacuum vessel 1, and plasma processing such as etching, deposition, and surface modification is performed on the substrate 7 placed on the substrate electrode 6. be able to. At this time, FIG.
As shown in FIG. 5, by supplying high-frequency power to the substrate electrode 6 from the high-frequency power supply 8 for the substrate electrode, the ion energy reaching the substrate 7 can be controlled. The counter electrode 5 is insulated from the vacuum container by the insulating ring 11.

FIG. 16 is a cross-sectional view of a plasma processing apparatus equipped with an antenna-type plasma source already proposed by us. In FIG. 16, a predetermined gas is introduced from a gas supply device 2 into a vacuum vessel 1 and exhausted by a pump 3 as an exhaust device. 100MHz
Is supplied to the spiral antenna 13 on the dielectric window 14, plasma is generated in the vacuum vessel 1 by the electromagnetic waves radiated in the vacuum vessel 1, and the substrate 7 mounted on the substrate electrode 6 Can be subjected to plasma processing such as etching, deposition, and surface modification. At this time, as shown in FIG. 16, by supplying high-frequency power to the substrate electrode 6 from the substrate-electrode high-frequency power supply 8, ion energy reaching the substrate 7 can be controlled.

[0009]

However, FIG.
And the conventional method shown in FIG. 16 has a problem that it is difficult to obtain plasma uniformity.

FIG. 17 shows the result of measuring the ion saturation current density at a position 20 mm directly above the substrate 7 in the plasma processing apparatus of FIG. Plasma generation conditions are as follows: gas type and gas flow rate are Cl2 = 100 sccm, pressure is 1 Pa, and high-frequency power is 2 kW. From FIG. 17, it can be seen that the plasma density is high in the peripheral part.

FIG. 18 shows the results of measuring the ion saturation current density at a position 20 mm directly above the substrate 7 in the plasma processing apparatus of FIG. Plasma generation conditions are as follows: gas type and gas flow rate are Cl2 = 100 sccm, pressure is 1 Pa, and high-frequency power is 2 kW. FIG. 18 shows that the plasma density is high in the peripheral portion.

The non-uniformity of the plasma is a phenomenon that has not been observed when the frequency of the high-frequency power is 50 MHz or less. To lower the electron temperature of the plasma, 5
It is necessary to use high-frequency power of 0 MHz or more. In this frequency band, in addition to the effect that the plasma is generated by capacitively or inductively coupling the plasma with the counter electrode or the antenna, the counter electrode or the antenna The effect that plasma is generated by the electromagnetic waves radiated from the surface propagating on the surface of the plasma appears. It is considered that the peripheral portion of the vacuum vessel becomes a reflection surface of the electromagnetic wave propagating on the surface of the plasma, so that the electric field becomes strong and a strong plasma is generated.

An object of the present invention is to provide a plasma processing method and apparatus capable of generating uniform plasma in view of the above conventional problems.

[0014]

According to a first aspect of the present invention, there is provided a plasma processing method, wherein the inside of a vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled to a predetermined pressure.
Plasma is generated in the vacuum vessel by applying high-frequency power having a frequency of 50 MHz to 3 GHz to a counter electrode provided opposite to the substrate placed on the substrate electrode in the vacuum vessel to process the substrate. A processing method is characterized in that a substrate is processed in a state where plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap provided to face the substrate.

In the plasma processing method according to the second invention of the present application, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the high frequency of 50 MHz to 3 GHz is applied to the antenna while controlling the inside of the vacuum vessel to a predetermined pressure. By applying power, an electromagnetic wave is radiated into the vacuum vessel through a dielectric window provided opposite to the substrate placed on the substrate electrode in the vacuum vessel, thereby generating plasma in the vacuum vessel. A plasma processing method for generating and processing a substrate, wherein the substrate is processed in a state where plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap provided opposite to the substrate. And

In the plasma processing method according to the first or second invention of the present application, preferably, the inner wall surface of the vacuum vessel is formed.
It is desirable that the area of the portion facing the substrate surrounded by the plasma trap is 0.5 to 2.5 times the area of the substrate.

Preferably, the groove width of the plasma trap is 3 mm to 50 mm.

Preferably, the groove depth of the plasma trap is 5 mm or more.

In the plasma processing method according to the first aspect of the present invention, the plasma trap may be provided on the counter electrode. Further, the plasma trap may be provided on an insulating ring for insulating the vacuum vessel and the counter electrode. Further, the plasma trap may be provided outside an insulating ring for insulating the vacuum vessel and the counter electrode. Further, the plasma trap may be provided between the counter electrode and an insulating ring for insulating the vacuum vessel and the counter electrode. Further, the plasma trap may be provided between the vacuum container and an insulating ring for insulating the vacuum container and the counter electrode.

In the plasma processing method according to the second aspect of the present invention, the plasma trap may be provided on the dielectric window. Further, the plasma trap may be provided outside the dielectric window. Further, the plasma trap may be provided between the vacuum container and the dielectric window.

The plasma processing method according to the first or second aspect of the present invention is a particularly effective plasma processing method when a DC magnetic field does not exist in a vacuum vessel.

A plasma processing apparatus according to a third aspect of the present invention includes a vacuum container, a gas supply device for supplying a gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a substrate in the vacuum container. , A counter electrode provided to face the substrate electrode, and a frequency of 50
A high frequency power supply capable of supplying a high frequency power of MHz to 3 GHz, and an annular and groove-shaped plasma trap provided opposite to the substrate are provided.

A plasma processing apparatus according to a fourth aspect of the present invention includes a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a substrate in the vacuum container. , A dielectric window provided to face the substrate electrode, an antenna for radiating electromagnetic waves into the vacuum vessel through the dielectric window, and a frequency of 50 MHz to 3 GHz. A high-frequency power supply capable of supplying high-frequency power and an annular and groove-shaped plasma trap provided to face the substrate are provided.

In the plasma processing apparatus according to the third or fourth aspect of the present invention, preferably, the inner wall surface of the vacuum vessel is formed.
It is desirable that the area of the portion facing the substrate surrounded by the plasma trap is 0.5 to 2.5 times the area of the substrate.

Preferably, the groove width of the plasma trap is 3 mm to 50 mm.

Preferably, the groove depth of the plasma trap is 5 mm or more.

[0027] In the plasma processing apparatus according to the third aspect of the present invention, the plasma trap may be provided on the counter electrode. Further, the plasma trap may be provided on an insulating ring for insulating the vacuum vessel and the counter electrode. Further, the plasma trap may be provided outside an insulating ring for insulating the vacuum vessel and the counter electrode. Further, the plasma trap may be provided between the counter electrode and an insulating ring for insulating the vacuum vessel and the counter electrode. Further, the plasma trap may be provided between the vacuum container and an insulating ring for insulating the vacuum container and the counter electrode.

In the plasma processing apparatus according to the fourth aspect of the present invention, the plasma trap may be provided on the dielectric window. Further, the plasma trap may be provided outside the dielectric window. Further, the plasma trap may be provided between the vacuum container and the dielectric window.

The plasma processing apparatus according to the third or fourth aspect of the present invention is a plasma processing apparatus which is particularly effective when a vacuum vessel is not provided with a coil or permanent magnet for applying a DC magnetic field.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.

FIG. 1 is a sectional view of a plasma processing apparatus used in the first embodiment of the present invention. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is exhausted by the pump 3 as an exhaust device,
By supplying a high-frequency power of 100 MHz to the counter electrode 5 by the counter electrode high-frequency power supply 4 while maintaining the inside of the vacuum vessel 1 at a predetermined pressure, plasma is generated in the vacuum vessel 1 and placed on the substrate electrode 6. The processed substrate 7 can be subjected to plasma processing such as etching, deposition, and surface modification. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided, so that the ion energy reaching the substrate 7 can be controlled. Further, the substrate can be processed in a state where the plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap 9 provided opposite to the substrate 7. The plasma trap 9 is provided on the counter electrode 5. Constituting the inner wall surface of the vacuum vessel 1,
The area of the portion 10 (hatched portion) surrounded by the plasma trap 9 on the surface facing the substrate is 0.8 times the area of the substrate. The groove width of the plasma trap 9 is 1
0 mm and the groove depth of the plasma trap 9 is 15 mm
It is. The counter electrode 5 is formed by an insulating ring 11.
Insulated from vacuum vessel.

FIG. 2 shows the result of measuring the ion saturation current density at a position 20 mm directly above the substrate 7. Plasma generation conditions are as follows: gas type and gas flow rate are Cl2 = 100 s
ccm, pressure 1 Pa, high frequency power 2 kW. From FIG. 2, it can be seen that the tendency that the plasma in the peripheral portion as shown in FIG. 17 is dense is suppressed, and uniform plasma is generated.

As described above, the following may be considered as causes of the improvement of the plasma uniformity as compared with the conventional plasma processing apparatus shown in FIG. The electromagnetic wave radiated from the counter electrode 5 is strengthened by the plasma trap 9.
Since low-electron temperature plasma tends to cause hollow cathode discharge, high-density plasma (hollow cathode discharge) is generated by a plasma trap 9 surrounded by a solid surface.
Is easy to generate. Therefore, it is considered that the plasma density is highest in the plasma trap 9 in the vacuum vessel 1 and the plasma is transported to the vicinity of the substrate 7 by diffusion, so that uniform plasma is obtained.

The hollow cathode discharge is as follows. Generally, a solid surface that is in contact with plasma is negatively charged due to a difference in thermal velocity between electrons and ions, so that a DC electric field is generated on the solid surface to repel electrons from the solid surface. In the space surrounded by the solid surface, as in the plasma trap 9 exemplified in the first embodiment of the present invention, the probability of electrons colliding with the solid surface is reduced due to the presence of the DC electric field. As a result, high-density plasma is generated in the plasma trap 9. Such discharge is called hollow cathode discharge.

In the first embodiment of the present invention described above, the case where the plasma trap 9 is provided on the counter electrode 5 has been described. In this case, the plasma trap 9 is generated by the self-bias voltage generated at the counter electrode 5. There is a possibility that the high-density ions existing in the substrate may collide with the counter electrode 5 with high energy, causing the counter electrode 5 to be sputtered. Sputtering of the counter electrode 5 is not preferable in that the life of the counter electrode 5 is shortened and impurities are mixed into the substrate 7. In order to avoid this, the plasma trap may be configured in a portion other than the counter electrode 5. For example, it is conceivable to provide the plasma trap 9 on the insulating ring 11 as shown in the second embodiment in FIG. Further, it is conceivable to provide the plasma trap 9 outside the insulating ring 11 as shown in the third embodiment in FIG. Also,
The plasma trap 9 is replaced by the fourth embodiment of FIG.
As shown in the fifth embodiment, a slight improvement can be achieved by providing between the counter electrode 5 and the insulating ring 11. Also, the plasma trap 9 is
As shown in the sixth embodiment, it is conceivable to provide between the vacuum vessel 1 and the insulating ring 11.

Next, a seventh embodiment of the present invention will be described with reference to FIGS.

FIG. 8 is a sectional view of a plasma processing apparatus used in the seventh embodiment of the present invention. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is exhausted by the pump 3 as an exhaust device,
While maintaining the inside of the vacuum vessel 1 at a predetermined pressure, a high-frequency power of 100 MHz is applied to the spiral antenna 13 by the high-frequency power source 12 for the antenna, and the substrate 7 placed on the substrate electrode 6 is applied.
By radiating electromagnetic waves into the vacuum vessel 1 through a dielectric window 14 provided opposite to the substrate, plasma is generated in the vacuum vessel 1 and etching, deposition, surface modification, etc. are performed on the substrate 7. Can be performed. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided, so that the ion energy reaching the substrate 7 can be controlled. Further, the substrate can be processed in a state where the plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap 9 provided opposite to the substrate 7. The plasma trap 9 is provided on the dielectric window 14. The area of the portion 10 (hatched portion) surrounded by the plasma trap 9 on the surface facing the substrate, which constitutes the inner wall surface of the vacuum vessel 1, is 0.8 times the area of the substrate. The groove width of the plasma trap 9 is 10 mm, and the groove depth of the plasma trap 9 is 15 mm.

FIG. 9 shows the result of measuring the ion saturation current density at a position 20 mm directly above the substrate 7. The plasma generation condition is such that the gas type and the gas flow rate are Cl2 = 100 s.
ccm, pressure 1 Pa, high frequency power 2 kW. From FIG. 9, it can be seen that the tendency that the plasma in the peripheral portion as shown in FIG. 18 is dense is suppressed, and uniform plasma is generated.

As described above, the following may be considered as causes of the improvement of the plasma uniformity as compared with the conventional plasma processing apparatus shown in FIG. The electromagnetic wave radiated from the antenna 13 is strengthened by the plasma trap 9. Since low-electron temperature plasma tends to cause hollow cathode discharge, high-density plasma (hollow cathode discharge) is easily generated in the plasma trap 9 surrounded by the solid surface. Therefore, it is considered that the plasma density is highest in the plasma trap 9 in the vacuum vessel 1 and the plasma is transported to the vicinity of the substrate 7 by diffusion, so that uniform plasma is obtained.

In the above-described seventh embodiment of the present invention, the case where the plasma trap 9 is provided in the dielectric window 14 has been described. However, the plasma trap 9 is different from that of the eighth embodiment shown in FIG. , May be provided outside the dielectric window 14. In addition, the plasma trap 9
Is a vacuum vessel 1 as shown in the ninth embodiment of FIG.
And the dielectric window 14.

In the embodiment of the present invention described above,
Among the scope of the present invention, the shape of the vacuum vessel, the shape and arrangement of the counter electrode or antenna, the shape and arrangement of the dielectric,
Only a part of various variations regarding the shape and arrangement of the plasma trap is illustrated. In applying the present invention, it goes without saying that various variations other than those exemplified here are possible. For example,
In the embodiment of the present invention, the case where the counter electrode is circular has been described. However, a configuration having another shape such as a polygon, an ellipse, and the like is also possible. Similarly, the case where the antenna has a spiral shape has been described, but a configuration having another shape such as a flat plate shape or a spoke shape is also possible. Alternatively, in a surface acoustic wave plasma processing apparatus provided with a cavity resonator 15 as shown in FIG. 12, the present invention can be applied by regarding the cavity resonator 15 as an antenna. Further, the present invention can be applied to a surface wave plasma processing apparatus including a cavity resonator 15 and a slot antenna 16 as shown in FIG.

In the above-described embodiment of the present invention, the case where the plasma trap is annular is described. However, the shape of the plasma trap is changed to a polygon, an ellipse, or another shape according to the shape of the substrate. It is also possible. Alternatively, instead of forming the plasma trap into a closed ring, it is also possible to form the plasma trap as a whole, though divided, as shown in a plan view in FIG.

The first or seventh embodiment of the present invention described above.
In an embodiment, the opposing electrode or antenna has 100M
Although the case where the high frequency power of Hz is supplied has been described,
The frequency is not limited to this, and the present invention is effective in a plasma processing method and apparatus using a frequency of 50 MHz to 3 GHz.

Further, the first or seventh embodiment of the present invention described above.
In the embodiment, the case where the area of the portion surrounded by the plasma trap on the surface facing the substrate constituting the inner wall surface of the vacuum vessel is 0.8 of the area of the substrate has been described. Is preferably 0.5 to 2.5 times the area of the substrate. If the area of this portion is less than 0.5 times the area of the substrate, it becomes difficult to obtain uniform plasma near the substrate even if the distance between the substrate and the plasma trap is sufficiently separated. If the area of this portion exceeds 2.5 times the area of the substrate, the distance between the substrate and the plasma trap needs to be extremely large in order to obtain uniform plasma near the substrate. In addition, it is not preferable because a heavy load is imposed on the pump in order to keep the inside of the vacuum vessel at a low pressure.

The first or seventh embodiment of the present invention described above.
In the embodiment, the groove width of the plasma trap is 10 mm.
However, the groove width of the plasma trap is desirably 3 mm to 50 mm. If the groove width is less than 3 mm or exceeds 50 mm, hollow cathode discharge may not occur in the plasma trap.

Further, in each of the embodiments, the shape of the groove has been described as a rectangular shape, but it may be a U shape, a V shape, or a combination of a rectangular shape, a U shape, and a V shape.

The first or seventh embodiment of the present invention described above
In the embodiment, the groove depth of the plasma trap is 15 m.
Although the case of m has been described, the groove depth of the plasma trap is desirably 5 mm or more. If the groove depth is less than 5 mm, hollow cathode discharge may not occur in the plasma trap.

In the above-described embodiment of the present invention, the case where no DC magnetic field exists in the vacuum vessel has been described. However, when there is no DC magnetic field large enough to allow high-frequency power to enter the plasma, For example,
The present invention is effective even when a small DC magnetic field of about several tens of gauss is used for improving the ignitability. However, the present invention is particularly effective when no DC magnetic field exists in the vacuum vessel.

[0049]

As is clear from the above description, according to the plasma processing method of the first invention of the present application, the inside of the vacuum vessel is evacuated while supplying the gas into the vacuum vessel, and the inside of the vacuum vessel is maintained at a predetermined pressure. While controlling the frequency, a counter electrode provided opposite to the substrate placed on the substrate electrode in the vacuum vessel has a frequency of 50%.
A plasma processing method for processing a substrate by generating a plasma in a vacuum vessel by applying a high-frequency power of MHz to 3 GHz, comprising: an annular and groove-shaped plasma trap provided opposite to the substrate; In order to process the substrate with the plasma distribution on the substrate controlled,
A uniform plasma can be generated, and the substrate can be uniformly processed.

Further, according to the plasma processing method of the second invention of the present application, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the antenna is controlled to a predetermined pressure, and the frequency of 50 MHz is applied to the antenna. By applying high-frequency power of about 3 GHz to 3 GHz, electromagnetic waves are radiated into the vacuum vessel through a dielectric window provided opposite to a substrate placed on the substrate electrode in the vacuum vessel, thereby forming a vacuum vessel. A plasma processing method for processing a substrate by generating plasma therein, wherein the substrate is processed in a state in which plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap provided to face the substrate. Therefore, uniform plasma can be generated, and the substrate can be uniformly processed.

According to the plasma processing apparatus of the third invention of the present application, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A substrate electrode for mounting the substrate in the container, a counter electrode provided to face the substrate electrode, a high frequency power supply capable of supplying high frequency power of a frequency of 50 MHz to 3 GHz to the counter electrode, and a counter electrode facing the substrate. Since the annular and grooved plasma trap is provided, uniform plasma can be generated and the substrate can be uniformly processed.

According to the plasma processing apparatus of the fourth invention of the present application, a vacuum vessel, a gas supply device for supplying gas into the vacuum vessel, an exhaust device for exhausting the inside of the vacuum vessel, A substrate electrode for placing the substrate in the container, a dielectric window provided opposite the substrate electrode, an antenna for radiating electromagnetic waves into the vacuum container through the dielectric window, and a frequency Since a high-frequency power supply capable of supplying a high-frequency power of 50 MHz to 3 GHz and an annular and groove-shaped plasma trap provided to face the substrate are provided, uniform plasma can be generated, and the substrate can be made uniform. Can be processed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of a plasma processing apparatus used in a first embodiment of the present invention.

FIG. 2 is a diagram showing a measurement result of an ion saturation current density in the first embodiment of the present invention.

FIG. 3 is a sectional view showing a configuration of a plasma processing apparatus used in a second embodiment of the present invention.

FIG. 4 is a sectional view showing a configuration of a plasma processing apparatus used in a third embodiment of the present invention.

FIG. 5 is a sectional view showing a configuration of a plasma processing apparatus used in a fourth embodiment of the present invention.

FIG. 6 is a sectional view showing a configuration of a plasma processing apparatus used in a fifth embodiment of the present invention.

FIG. 7 is a sectional view showing a configuration of a plasma processing apparatus used in a sixth embodiment of the present invention.

FIG. 8 is a sectional view showing a configuration of a plasma processing apparatus used in a seventh embodiment of the present invention.

FIG. 9 is a diagram showing a measurement result of an ion saturation current density in a seventh embodiment of the present invention.

FIG. 10 is a sectional view showing a configuration of a plasma processing apparatus used in an eighth embodiment of the present invention.

FIG. 11 is a sectional view showing a configuration of a plasma processing apparatus used in a ninth embodiment of the present invention.

FIG. 12 is a sectional view showing a configuration of a plasma processing apparatus used in another embodiment of the present invention.

FIG. 13 is a sectional view showing a configuration of a plasma processing apparatus used in another embodiment of the present invention.

FIG. 14 is a plan view showing a configuration of a plasma trap used in another embodiment of the present invention.

FIG. 15 is a sectional view showing a configuration of a plasma processing apparatus used in a conventional example.

FIG. 16 is a sectional view showing a configuration of a plasma processing apparatus used in a conventional example.

FIG. 17 is a diagram showing a measurement result of an ion saturation current density in a conventional example.

FIG. 18 is a diagram showing a measurement result of an ion saturation current density in a conventional example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Gas supply device 3 Pump 4 High frequency power supply for counter electrode 5 Counter electrode 6 Substrate electrode 7 Substrate 8 High frequency power supply for substrate electrode 9 Plasma trap 10 Portion surrounded by plasma trap (shaded portion) 11 Insulation ring

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takuya Matsui 1006 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Izumi Matsuda 1006 Kadoma Kadoma, Kadoma City Osaka Pref. Matsushita Electric Industrial Co., Ltd. 72) Inventor: Akio Mitsuhashi 1006, Kazuma, Kazuma, Kazuma, Osaka Prefecture F-term (reference) 4K029 CA05 CA13 DC32 DC35 FA05 GA02 4K030 CA12 DA04 FA03 KA20 4K057 DA16 DD01 DM02 DM06 DM07 DM18 5F004 AA01 BA06 BA20 BB13 BB18 BC08 CA01 CA09 5F045 AA08 BB02 DP04 EH02 EH03 EH04 EH14 EH19 EH20

Claims (28)

[Claims] 1. While evacuating the inside of a vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure,
Plasma is generated in the vacuum vessel by applying high-frequency power having a frequency of 50 MHz to 3 GHz to a counter electrode provided opposite to the substrate placed on the substrate electrode in the vacuum vessel to process the substrate. A plasma processing method, wherein a substrate is processed in a state where plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap provided to face the substrate. 2. The method according to claim 1, further comprising evacuating the vacuum vessel while supplying gas into the vacuum vessel, and controlling the inside of the vacuum vessel to a predetermined pressure.
By applying high frequency power of a frequency of 50 MHz to 3 GHz to an antenna, radiating electromagnetic waves into the vacuum container through a dielectric window provided facing a substrate placed on a substrate electrode in the vacuum container. Is a plasma processing method for generating plasma in a vacuum vessel and processing a substrate, wherein the plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap provided opposite to the substrate. A plasma processing method, wherein the substrate is processed by: 3. A method according to claim 1, wherein, of the surface facing the substrate, which constitutes the inner wall surface of the vacuum vessel, an area of a portion surrounded by the plasma trap is 0.5 to 2.5 times the area of the substrate. The plasma processing method according to claim 1, wherein: 4. The plasma processing method according to claim 1, wherein the groove width of the plasma trap is 3 mm to 50 mm. 5. The plasma processing method according to claim 1, wherein the groove depth of the plasma trap is 5 mm or more. 6. The plasma processing method according to claim 1, wherein the plasma trap is provided on the counter electrode. 7. The plasma processing method according to claim 1, wherein the plasma trap is provided on an insulating ring for insulating the vacuum vessel and the counter electrode. 8. The plasma processing method according to claim 1, wherein the plasma trap is provided outside an insulating ring for insulating the vacuum vessel and the counter electrode. 9. The plasma processing method according to claim 1, wherein the plasma trap is provided between the counter electrode and an insulating ring for insulating the vacuum vessel and the counter electrode. 10. The plasma processing method according to claim 1, wherein the plasma trap is provided between the vacuum vessel and an insulating ring for insulating the vacuum vessel and the counter electrode. 11. The plasma processing method according to claim 2, wherein the plasma trap is provided on the dielectric window. 12. The plasma processing method according to claim 2, wherein the plasma trap is provided outside the dielectric window. 13. The plasma processing method according to claim 2, wherein the plasma trap is provided between the vacuum vessel and the dielectric window. 14. The plasma processing method according to claim 1, wherein no DC magnetic field exists in the vacuum vessel. 15. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a substrate electrode for placing a substrate in the vacuum container. A counter electrode provided opposite to the substrate electrode; a high frequency power supply capable of supplying high frequency power of a frequency of 50 MHz to 3 GHz to the counter electrode; and an annular and groove-shaped plasma trap provided opposite to the substrate. A plasma processing apparatus comprising: 16. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a substrate electrode for placing a substrate in the vacuum container. A dielectric window provided opposite to the substrate electrode, an antenna for radiating electromagnetic waves into the vacuum chamber through the dielectric window, and a high frequency capable of supplying high frequency power of a frequency of 50 MHz to 3 GHz to the antenna. A plasma processing apparatus comprising: a power supply; and an annular and groove-shaped plasma trap provided to face a substrate. 17. The semiconductor device according to claim 17, wherein, of the surface facing the substrate constituting the inner wall surface of the vacuum vessel, the area surrounded by the plasma trap is 0.5 to 2.5 times the area of the substrate. 17. The plasma processing apparatus according to claim 15, wherein: 18. The plasma processing apparatus according to claim 15, wherein a groove width of the plasma trap is 3 mm to 50 mm. 19. The plasma trap has a groove depth of 5 mm.
17. The plasma processing apparatus according to claim 15, wherein: 20. The plasma processing apparatus according to claim 15, wherein the plasma trap is provided on the counter electrode. 21. The plasma processing apparatus according to claim 15, wherein the plasma trap is provided on an insulating ring for insulating the vacuum vessel and the counter electrode. 22. The plasma processing apparatus according to claim 15, wherein the plasma trap is provided outside an insulating ring for insulating the vacuum vessel and the counter electrode. 23. The plasma processing apparatus according to claim 15, wherein the plasma trap is provided between the counter electrode and an insulating ring for insulating the vacuum vessel and the counter electrode. 24. The plasma processing apparatus according to claim 15, wherein the plasma trap is provided between the vacuum vessel and an insulating ring for insulating the vacuum vessel and the counter electrode. 25. The plasma processing apparatus according to claim 16, wherein the plasma trap is provided on the dielectric window. 26. The plasma processing apparatus according to claim 16, wherein the plasma trap is provided outside the dielectric window. 27. The plasma processing apparatus according to claim 16, wherein the plasma trap is provided between the vacuum vessel and the dielectric window. 28. The plasma processing apparatus according to claim 15, wherein a coil or a permanent magnet for applying a DC magnetic field is not provided in the vacuum vessel.