JP2005072371A - Plasma generator, method of manufacturing thin film, and method of manufacturing fine structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment technique by which an object to be treated can be treated uniformly by generating uniform plasma. <P>SOLUTION: An ECR plasma generator generates plasma through the electron cyclotron resonance (ECR) between electrons moving in a magnetic field and a microwave. The plasma generator is provided with at least one electromagnetic wave generating means 13 which generates the microwave, a plurality of plasma sources 20 which generate the plasma by the action between a magnetic field generated by means of a magnetic field forming means provided in the circumference and the microwave, and a transmitting means which transmits the microwave to the plasma sources 20 from the electromagnetic wave generating means 13. The plasma generator is also provided a vacuum chamber 14 in which the object to be subjected to surface treatment with the plasma supplied from the plasma sources 20 and which is provided with an exhausting means. The plasma sources 20 are disposed to positions facing the object. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a plasma process, and more particularly, to a plasma generation technique using an ECR (Electron Cyclotoron Resonance) phenomenon as a plasma generation source.

  The plasma process has been applied to a wide range of functional thin films such as semiconductors, circuit elements such as capacitors, multilayer wiring, and contact formation, and its importance is increasing. As the importance of plasma process technology increases, the semiconductor manufacturing technology is required to increase the area of the substrate and miniaturize the device, and to develop a new plasma source that can cope with this. Yes.

  In order to realize such a process, it is necessary that the plasma source has a high density, a large diameter, and conditions such that plasma is generated under a low pressure.

  However, it has been difficult for conventional capacitively coupled high-frequency plasmas and magnetron plasmas to satisfy all of these conditions.

  In recent years, ECR plasma, helicon wave excitation plasma, inductively coupled plasma, etc. have been developed as high-efficiency and high-density plasma generation methods based on new principles that have almost solved these conditions, and some have already been put into practical use. Has reached. All of these methods have a feature that the pressure is very low and a high-density plasma can be obtained nevertheless.

  However, even in these apparatuses, it has been difficult to generate a high-density and uniform plasma that can be applied to a substrate having a large diameter (for example, 12 inches or more). On the other hand, in order to reduce the cost of the final product, such plasma generation requires simple and low-cost plasma generation.

  Such problems in low pressure / high density plasma are described in, for example, Non-Patent Document 1 and Non-Patent Document 2.

On the other hand, when the conventional ECR plasma CVD apparatus for a large area substrate is used, it is necessary to move the substrate disposed behind the slit plate in the vacuum chamber in order to make the deposited film thickness uniform. In such an apparatus, since a space for moving the substrate is also required, the apparatus becomes large and expensive, resulting in an increase in manufacturing cost.
Applied Physics, Vol. 63, No. 6 (1994) 559 Applied Physics, Vol. 66, No. 6 (1997) 550

  An object of the present invention is to provide a plasma processing technique capable of uniformly processing an object by generating uniform plasma.

  In order to solve the above-described problems, the present invention is an ECR plasma apparatus that generates plasma by electron cyclotron resonance (ECR) of electrons moving in a magnetic field and microwaves, and generates at least one electromagnetic wave that generates microwaves. Means, a plurality of plasma sources that generate plasma by the action of the magnetic field generated by the magnetic field forming means provided around and the microwaves, and transmission means for transmitting the microwaves from the electromagnetic wave generating means to the plasma source A vacuum chamber provided with an evacuation unit in which an object to be surface-treated by plasma supplied from the plurality of plasma sources is disposed, and the plurality of plasma sources are disposed at positions facing the object. An ECR plasma apparatus is provided that is arranged to exist.

  According to such a configuration, the object is surface-treated with plasma supplied from a plurality of plasma sources, so that high-density and uniform plasma that can be applied to a large-area object can be generated.

  The electromagnetic wave generating means is preferably provided for each plasma source. According to this, since the electromagnetic wave generating means is provided for each plasma source, the intensity of the plasma guided to each plasma source can be easily adjusted individually.

  It is preferable that the transmission means is a waveguide, and the waveguide is branched into two or more and connected to the plurality of plasma sources. According to this, since microwaves can be guided from one microwave power source to a plurality of plasma sources, it is not necessary to provide a large number of microwave power sources, and the apparatus can be miniaturized.

  Preferably, the transmission means is a waveguide, and a plurality of waveguides are connected to one electromagnetic wave generation means. According to this, since microwaves can be guided from one microwave power source to a plurality of plasma sources, it is not necessary to provide a large number of microwave power sources, and the apparatus can be miniaturized. In addition, since the waveguide is not branched, it is not easily affected by microwave attenuation due to the difference in tube length.

  It is preferable that a rotatable stage for placing the object is provided in the vacuum chamber. Thereby, the target object surface can be processed more uniformly.

  It is preferable that the plasma sources are arranged so as to be located at vertices of substantially equilateral triangles on a surface facing the object. Thereby, since a higher density and uniform plasma can be formed in the vacuum chamber, the surface of the object can be more uniformly and efficiently processed.

  It is preferable that a part of the plasma generated from the plasma source is disposed outside the outer periphery of the object. This makes it possible to perform a uniform surface treatment even in the vicinity of the outer periphery of the object.

  The plurality of plasma sources are preferably provided independently of each other. This facilitates individual adjustment of each plasma source.

  It is preferable that the apparatus further includes a measuring unit that measures a plasma density generated in the plasma source and a control unit that controls an output of the electromagnetic wave generating unit based on data obtained from the measuring unit. According to such a configuration, the plasma density generated in each plasma source can be adjusted by measuring the generated plasma density.

  It is preferable that the apparatus further comprises measurement means for measuring the microwave introduced into the plasma source, and control means for controlling the output of the electromagnetic wave generation means based on data obtained from the measurement means. According to such a configuration, the plasma density generated in each plasma source can be adjusted by measuring the microwave introduced into each plasma source.

  A variable resistor capable of adjusting the intensity of the microwave is provided in the waveguide, and further, a measuring means for measuring the plasma density generated in the plasma source, and the variable based on the data obtained from the measuring means. And a control means for controlling the resistance. According to such a configuration, the plasma density generated in each plasma source can be adjusted by measuring the generated plasma density.

  A variable resistor capable of adjusting the intensity of the microwave is provided in the waveguide, and further, measurement means for measuring the microwave introduced into the plasma source, and based on data obtained from the measurement means, And a control means for controlling the variable resistance. According to such a configuration, the plasma density generated in each plasma source can be adjusted by measuring the microwave introduced into each plasma source.

  In the method for producing a thin film of the present invention, a plasma is generated by electron cyclotron resonance (ECR) of electrons moving in a magnetic field and microwaves, and activated species activated by the plasma are deposited on an object. A thin film manufacturing method for forming a thin film thereon, the step of generating plasma by introducing microwaves into a plurality of plasma sources, and the generated plasma in a vacuum chamber containing the object, Introducing from a plurality of supply ports provided at positions facing the object, activating the source gas introduced from the source gas introduction means, and laminating the obtained active species on the surface of the object. Including.

  According to this, since plasma generated from a plurality of plasma sources can be introduced onto the object from a plurality of locations, a uniform thin film can be efficiently formed on the surface of the object.

  The fine structure manufacturing method of the present invention is a fine structure in which plasma is generated by electron cyclotron resonance (ECR) of electrons moving in a magnetic field and microwaves, and an object is etched by active species activated by the plasma. A method for manufacturing a structure, comprising: generating plasma by introducing microwaves into a plurality of plasma sources; and generating the plasma relative to the target object in a vacuum chamber containing the target object. And a step of etching the object by introducing from a plurality of supply ports provided at a position to be performed.

  According to this, since it is possible to introduce plasma generated from a plurality of plasma sources onto a target from a plurality of locations, the surface of the target can be uniformly and efficiently processed, and an accurate microstructure The body can be manufactured efficiently.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic diagram of an ECR plasma apparatus according to an embodiment of the present invention.

  As shown in the figure, the ECR plasma apparatus according to this embodiment includes a microwave power source 11 as an electromagnetic wave generating means for generating a microwave, a waveguide 12 as a transmitting means, a vacuum chamber 14, and a plurality of plasmas. Mainly composed of the source 20.

  The vacuum chamber 14 is coupled to an exhaust pump (not shown) as an exhaust means via an exhaust pipe (not shown), and a wall portion of the vacuum chamber 14 is connected to a reference potential such as a ground potential. ing. The vacuum chamber is provided with a plurality of openings 16, and a plurality of plasma sources 20 are individually installed in the openings 16 corresponding to the openings 16.

  As described above, since the plasma sources 20 are individually provided corresponding to the respective openings, it is possible to supply substantially uniform plasma from a plurality of locations, and even for a large area object, high density and uniformity. A fresh plasma.

  In the vacuum chamber 14, a stage 15 on which an object such as a substrate to be processed by the plasma process is placed at a position facing the plurality of plasma sources 20 (the plurality of openings 16). Yes. The stage 15 may be configured to be rotatable so that the processing using the plasma supplied from the plurality of openings 16 is made more uniform.

  The plasma source 20 mainly includes a plasma chamber 21, a magnetic field forming unit 13 such as an electromagnet or a permanent magnet, a gas supply unit (not shown), and a microwave introduction window provided near the side surface outside the plasma chamber 21. It is configured. In the plasma source 20, plasma is generated by electron cyclotron resonance. A position in the plasma source 20 having a magnetic field intensity at which this electron cyclotron resonance (ECR) occurs is referred to as an ECR point. The arrangement method of the plasma source 20 (the arrangement method of the ECR points) is not particularly limited, but the plurality of plasma sources 20 (a plurality of ECR points) are arranged so as to be positioned at the vertices of substantially equilateral triangles. It is preferable (see FIG. 5). According to this, the plasma supplied into the vacuum chamber 14 can be made more uniform and dense. The arrangement interval of the plasma source 20 (ECR point) will be described later.

  A microwave is transmitted to the plasma source 20 via a waveguide 12 from a microwave power source 11 such as a magnetron. In the ECR plasma apparatus, electrons that are in cyclotron motion due to the magnetic field generated by the magnetic field forming means 13 are resonantly accelerated by this microwave, and are frequently ionized with high kinetic energy. A density plasma is obtained. The principle of the ECR plasma apparatus will be described later.

  In the present embodiment, the waveguide 12 is branched into a plurality, and is configured to be able to transmit microwaves from one microwave power source 11 to a plurality of plasma sources 20. Since the waveguide 12 branches in the middle as described above and is coupled to the plurality of plasma sources 20, the distance to the plasma source 20 is increased and decreased, so that microwave attenuation occurs during transmission. In some cases, a uniform plasma cannot be generated for each plasma source.

  In order to avoid such an inconvenience, for example, all the tube lengths of the waveguide 12 may be made constant.

  2 and 3 are schematic views of an ECR plasma apparatus according to another embodiment of the present invention.

  As shown in FIG. 2, it is possible to make the tube length of the waveguide 12 constant by installing a microwave power source 11 corresponding to each plasma source 20. In addition, since the microwave power source 11 is provided independently, the intensity of each plasma source 20 can be easily adjusted separately even when the plasma density in the plasma source 20 varies due to some factor.

  In addition, as shown in FIG. 3, a plurality of waveguides 12 are coupled to one microwave power source 11, and the tube ends of the waveguides 12 are made constant by connecting multiple ends to the plasma source 20, respectively. Is also possible. According to this, since the number of microwave power sources can be reduced, the apparatus can be miniaturized.

  Further, the difference in plasma density for each plasma source 20 caused by the attenuation of the microwave due to the tube length of the waveguide 12, the processing accuracy of the waveguide size, the attenuation of the microwave due to the unevenness of the inner surface of the waveguide, etc. The problem can also be solved by the following method.

  FIG. 4 is a diagram for explaining a plasma density control method for making the plasma density generated in each plasma chamber uniform.

  First, the plasma density of the plasma space 17 in which plasma is generated is monitored by measuring means X such as a plasma monitor. Next, the measurement data of the plasma monitor is transmitted to a feedback control circuit as the control means Y. In the feedback control circuit, the plasma density in each plasma source is compared based on this measurement data, and is provided in the branch pipe of the waveguide 12 connected to each plasma source so that each plasma density becomes substantially equal. The value of the variable resistor 18 is changed. Thereby, since the intensity of the microwave transmitted to the plasma source can be adjusted, a more uniform plasma can be generated. The adjustment of the variable resistor 18 may be performed by comparing the measurement data with a predetermined reference value.

  Further, when the microwave power source 11 is provided for each plasma source 20, it is not necessary to separately provide a variable resistor, and the intensity of the generated microwave can be adjusted by directly changing the microwave power source 11.

  Further, the plasma measuring means X may measure the microwave introduced from the microwave introduction unit instead of the plasma density, and control the plasma density based on the measurement data. In this case, an antenna can be used as the plasma measuring means X. Similarly, the measurement data detected by the antenna is transmitted to the feedback control circuit, and the value of the variable resistor 18 or the microwave power source 11 is controlled based on this data.

  The principle of the ECR plasma apparatus will be briefly described below with reference to FIG.

  In the ECR plasma apparatus, a microwave oscillated from a microwave power source (not shown) as a means for generating a microwave is passed through a waveguide 12 and a vacuum window 30 as a microwave introducing portion made of a dielectric. Then, it is introduced into the plasma chamber 21 constituting the plasma source 20. Separately, the gas introduced into the plasma chamber 21 by the gas supply means 25 is turned into plasma by the electron cyclotron resonance effect of the microwave and the magnetic field generated by the electromagnet or permanent magnet, thereby generating active species. The generated active species is supplied into the vacuum chamber 14 along the magnetic field lines 27 generated by the electromagnet or the permanent magnet as the magnetic field forming means 13 and is further carried to the surface of the substrate 28 on the stage 15 to reach the surface of the substrate 28. For example, a process such as etching or thin film formation is performed.

For example, when the ECR plasma apparatus of this embodiment is a CVD apparatus, the gas supply means 25 introduces a plasma generating gas such as Ar into the plasma chamber 21 to generate plasma. This plasma is drawn through the opening 16 along the magnetic field lines 27 into the vacuum chamber 14 adjacent to the plasma chamber 21. This plasma activates a material gas such as SiH _{4 that is} a material for forming a thin film separately introduced into the vacuum chamber 14 to generate a thin film on the surface of the substrate 28.

  In the case of an etching apparatus, an etching gas is introduced into the plasma chamber from the gas supply means 25 to form plasma, and the generated active species are moved to the substrate surface along the lines of magnetic force to etch the surface of the substrate 28.

  Note that the present invention is not limited to a CVD apparatus or an etching apparatus, but can be used for other apparatuses such as a sputtering apparatus using ECR plasma.

  Next, an embodiment of a design method for providing a plurality of ECR points in the apparatus will be specifically described by taking an ECR-CVD apparatus as an example.

As the ECR discharge conditions of the current ECR-CVD apparatus, for example, the following are used. Frequency (f) 2.45 GHz, magnetic field (B) 875 Gauss, electron temperature (kT, E) 10 eV (10 × 1.602147 × 10 ⁻¹⁹ J), pressure (P) 0.4 Pa (3 mTorr).

Here, the chamber particles and nitrogen, the scattered radius when the d (3 Å), the electron mass ^{_{m e (9.1094 × 10 -31 Kg}} ), the elementary charge e (1.6022 × 10 ^-19 C), the Larmor radius (r _L ) of the electrons and the mean free path (l) of the particles in the chamber can be obtained from the equations (I) and (II), respectively.

(Equation 1)
_{r L = m e v / eB} = (m e / eB) · (2E / m e) 1/2 = (2Em e) 1/2 / eB (I)

(Equation 2)
l = kT / (√2 · Pπd ² ) (II)
From the above conditions, in the current apparatus, the electron Larmor radius (r _L ) is 0.12 mm, and the mean free path (l) is 2.6 cm.

  By the way, the size of the plasma discharge space of the vacuum chamber in the current apparatus is about 20 cm. With such a size, the particles in the discharge space can be sufficiently accelerated without colliding with other particles or the chamber wall. Actually, in the visual confirmation when the ECR discharge was performed using the current apparatus, the sparkling space was about 5 to 10 cm in diameter.

  From this, it is considered that if there is a discharge space of about 1000 times the electron Larmor radius, the particles do not collide with the chamber wall and can stably perform ECR discharge.

  Next, a configuration for making the apparatus into multi-ECR points (forming a plurality of ECR points) is examined.

  In order to provide a large number of discharge spaces in the apparatus, it is necessary to reduce the Larmor radius.

  Here, assuming that the diameter of the ECR discharge space capable of forming multiple points in the chamber is 5 cm, the allowable Larmor radius of the electrons is 0.05 mm from the above conditions. Assuming that the electron temperature is 10 eV as described above, the magnetic field strength (B) and the μ-wave frequency (f) are obtained from the following formulas (III) and (IV) in order to achieve the Larmor radius. .

(Equation 3)
B = (2E / m) ^1/2 / (er _L ) (III)

(Equation 4)
_{f = eB / (2πm e)} (IV)
From the above conditions, the magnetic field strength (B) is 2100 Gauss and the μ wave frequency (f) is 5.88 GHz.

By the way, the wavelength (λ) of the microwave in this case is 5.1 cm from λ = c / f (c: speed of light, c = 2,997925 × 10 ⁸ m / s). Here, when microwaves are introduced through a rectangular waveguide, the microwaves are blocked unless the length of the long side of the waveguide is λ / 2 = 2.55 cm or more. In general, when the long side of the waveguide is very close to λ / 2, the waveguide loss increases exponentially. Therefore, the size of the long side of the waveguide is set to 1 of λ / 2. Usually, it is set to about 5 times.

  Considering these, the long side of the rectangular waveguide is about 3.8 cm.

  However, it is difficult to arrange a large number of 3.8 cm waveguides in a device having a diameter of 30 cm, for example.

  Therefore, on the contrary, the ECR discharge condition is examined on the assumption that the long side of the rectangular waveguide is about 2.0 cm. In this case, as described above, when the microwave that can be guided in accordance with the above formulas (III) and (IV) is determined in consideration of the waveguide loss and the cutoff wavelength, the microwave frequency is 11.25 GHz or more. At this time, the magnetic field intensity (B) necessary for causing the ECR discharge is 4020 Gauss.

  Assuming that the electron temperature is 10 eV, the Larmor radius is 0.0265 mm from the formula (I). This value is sufficiently smaller than the electron Larmor radius (0.12 mm) in the current device, and is sufficiently smaller than the mean free path. Therefore, it is considered that electrons can be accelerated sufficiently.

  FIG. 7 is a graph showing the measurement results of the magnetic field strength of the current ECR-CVD apparatus. FIG. 8 is a diagram for explaining the measurement position of the magnetic field strength in FIG.

  FIG. 7A shows the relationship between the distance (x) from the microwave introduction unit 30 on the perpendicular line perpendicular to the bottom surface of the vacuum chamber from the microwave introduction unit 30 in FIG. 8A and the magnetic field intensity. FIG. As shown in FIG. 5A, it is shown that the strength of the magnetic field decreases as the distance from the microwave introduction unit 30 increases. FIG. 7B is a diagram showing the relationship between the distance (y) from the center point O on the bottom surface of the vacuum chamber and the magnetic field strength. As shown in FIG. 8B, a strong magnetic field strength is shown near the center point O, but the magnetic field strength decreases as the distance from the center point increases.

  Therefore, the arrangement interval of the plasma sources (ECR points) is such that the magnetic field strength at a position away from the center point O can obtain a magnetic field strength that is substantially the same as that of the center point O by overlapping a plurality of plasma sources. It is preferable to determine. Thus, more uniform plasma can be obtained by determining the arrangement interval of the plasma sources.

  From the above, in order to suitably configure an ECR plasma apparatus having a plurality of plasma sources (ECR points), the following conditions are preferably satisfied. That is, the microwave frequency is preferably 10 GHz or more. The degree of vacuum in the vacuum chamber during the plasma process is preferably 100 mTorr or less. It is desirable that the ECR discharge space is 5 times or more, preferably 100 times or more of the Larmor radius. It is preferable that the interval between the center positions of the plasma generation source, that is, the interval A between the ECR points and the interval B between the center position of the plasma generation source and the object satisfy A <B. The long side of the microwave waveguide is preferably 3 cm or less. By satisfying these requirements, it is possible to further optimize an ECR plasma apparatus having a plurality of plasma sources (ECR points).

  According to the present embodiment, since plasma is generated at multiple points, high-density and uniform plasma that can be applied to a large-area substrate can be generated.

  In addition, since the waveguide has a variable resistance, it is possible to adjust the intensity of the microwaves individually transmitted through the waveguide, and to adjust the plasma density generated in each plasma source substantially equally. .

  The ECR plasma apparatus according to this embodiment can be suitably used for a CVD apparatus and an etching apparatus.

FIG. 1 is a schematic diagram of an ECR plasma apparatus according to an embodiment of the present invention. FIG. 2 is a schematic view of an ECR plasma apparatus according to another embodiment of the present invention. FIG. 3 is a schematic view of an ECR plasma apparatus according to another embodiment of the present invention. FIG. 4 is an explanatory diagram for explaining a plasma density control method. FIG. 5 is a diagram illustrating an arrangement example of plasma sources. FIG. 6 is an explanatory diagram for explaining the principle of the ECR plasma apparatus. FIG. 7 is a graph showing the measurement results of the magnetic field strength of the current ECR-CVD apparatus. FIG. 8 is a diagram for explaining the measurement position of the magnetic field strength in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 11 ... Microwave power supply, 12 ... Waveguide, 13 ... Magnetic field formation means, 14 ... Vacuum chamber, 15 ... Stage, 16 ... Opening, 17 ... Plasma space , 18 ... Variable resistance, 20 ... Plasma source, 21 ... Plasma chamber, 25 ... Gas supply means, 27 ... Magnetic field lines, 28 ... Substrate, 30 ... Microwave introduction part 31 ... gas supply means, X ... measurement means, Y ... control means

Claims (14)

An ECR plasma apparatus that generates plasma by electron cyclotron resonance (ECR) of electrons moving in a magnetic field and microwaves,
At least one electromagnetic wave generating means for generating microwaves;
A plurality of plasma sources that generate plasma by the action of a magnetic field generated by magnetic field forming means provided around and the microwave;
Transmitting means for transmitting the microwave from the electromagnetic wave generating means to the plasma source;
A vacuum chamber having exhaust means in which an object to be surface-treated by plasma supplied from the plurality of plasma sources is disposed;
With
An ECR plasma apparatus, wherein the plurality of plasma sources are arranged at positions opposite to the object. The ECR plasma apparatus according to claim 1, wherein the electromagnetic wave generating means is provided for each plasma source. The ECR plasma apparatus according to claim 1 or 2, wherein the transmission means is a waveguide, and the waveguide is branched into two or more and connected to the plurality of plasma sources. The ECR plasma apparatus according to any one of claims 1 to 3, wherein the transmission means is a waveguide, and a plurality of waveguides are connected to one electromagnetic wave generation means. The ECR plasma apparatus according to any one of claims 1 to 4, wherein a rotatable stage on which the object is placed is provided in the vacuum chamber. The ECR plasma apparatus according to any one of claims 1 to 5, wherein the plasma sources are arranged so as to be located at vertices of substantially equilateral triangles on a surface facing the object. The ECR plasma apparatus according to any one of claims 1 to 6, wherein the plasma source is arranged so that a part of the plasma generated from the plasma source is located outside the outer periphery of the object. The ECR plasma apparatus according to claim 1, wherein the plurality of plasma sources are provided independently of each other. Measuring means for measuring the plasma density generated in the plasma source;
Control means for controlling the output of the electromagnetic wave generating means based on data obtained from the measuring means;
The ECR plasma apparatus according to claim 1, further comprising: Measuring means for measuring the microwave introduced into the plasma source;
Control means for controlling the output of the electromagnetic wave generating means based on data obtained from the measuring means;
The ECR plasma apparatus according to claim 1, further comprising: A variable resistor capable of adjusting the intensity of the microwave is provided in the waveguide, and
Measuring means for measuring the plasma density generated in the plasma source;
Control means for controlling the variable resistance based on data obtained from the measurement means;
An ECR plasma apparatus according to claim 1, comprising: A variable resistor capable of adjusting the intensity of the microwave is provided in the waveguide, and
Measuring means for measuring the microwave introduced into the plasma source;
Control means for controlling the variable resistance based on data obtained from the measurement means;
An ECR plasma apparatus according to claim 1, comprising: Production of a thin film that forms a thin film on an object by generating plasma by electron cyclotron resonance (ECR) of electrons moving in a magnetic field and microwaves, and depositing active species activated by the plasma on the object A method,
A step of generating plasma by introducing microwaves into a plurality of plasma sources;
The generated plasma is introduced into a vacuum chamber containing the object from a plurality of supply ports provided at positions facing the object, and the material gas introduced from the material gas introduction means is activated. A step of laminating the obtained active species on the surface of the object;
A method for producing a thin film, comprising: A method of producing a microstructure in which a plasma is generated by electron cyclotron resonance (ECR) of electrons moving in a magnetic field and microwaves, and an object is etched by active species activated by the plasma,
A step of generating plasma by introducing microwaves into a plurality of plasma sources;
Etching the object by introducing the generated plasma into a vacuum chamber containing the object from a plurality of supply ports provided at positions facing the object; and
The manufacturing method of the fine structure characterized by including.