JPH09275097A - Semiconductor manufacturing device and semiconductor manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To equally process even a large area of substance to be processed, by equally applying a group of particles for processing the substance to be processed. SOLUTION: Etching, etc., to the whole face of a semiconductor wafer 21 are performed by applying plasma to the semiconductor wafer 21 from a nozzle 16 while rotating the semiconductor wafer 21 on a lower electrode 22 by a motor 24, and shifting it relatively in radial direction. Therefore, the area of application of plasma may be narrower than the area of the semiconductor wafer 21, and the plasma can be applied equally.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method for irradiating an object to be processed such as a semiconductor wafer with particle groups for processing.

[0002]

2. Description of the Related Art Semiconductor manufacturing equipment such as etching equipment has become expensive as semiconductor devices have become finer.
In order to reduce the cost per semiconductor wafer or the like, the diameter of the semiconductor wafer or the like is being increased. For this reason, even in an etching apparatus or the like, the irradiation area of particle groups such as plasma and ion beams is increased.

[0003]

However, it is not easy to irradiate a particle group uniformly over a large area, and in the case of a semiconductor wafer having a large diameter of 10 inches or more, especially the etching of the central part and the peripheral part is performed. It is becoming difficult to perform etching uniformly at a uniform speed. On the other hand, it is considered to increase the generation source of the particle group itself, but if the generation source is increased, the size of the entire apparatus becomes large and the cost becomes high.

In the ECR plasma etching apparatus, since the highest density plasma is generated near the ECR resonance point, it is necessary to make the magnetic field gradient of the divergent magnetic field near the resonance point uniform in the circumferential direction. . However, for a semiconductor wafer having a large diameter of 12 inches or more, it is becoming difficult to make the magnetic field gradient of the divergent magnetic field uniform in the circumferential direction and perform etching uniformly.

In the magnetron RIE apparatus, a magnetic field is applied to the plasma to confine the electrons to increase the plasma density. However, if the plasma generation source is increased, it is difficult to form a uniform magnetic field. It is becoming difficult to perform etching uniformly.

[0006]

According to another aspect of the present invention, there is provided a semiconductor manufacturing apparatus, wherein an irradiation unit that irradiates a particle group for processing an object to be processed, a rotating unit that rotates the object to be processed, and the object to be processed. And moving means for relatively moving the irradiation means in the radial direction.

A semiconductor manufacturing apparatus according to a second aspect of the present invention is the semiconductor manufacturing apparatus according to the first aspect, further comprising control means for controlling at least one of the rotation speed and the movement speed.

According to a third aspect of the present invention, there is provided a semiconductor manufacturing apparatus according to the first aspect, further comprising displacement means for relatively displacing the irradiation means in the axial direction of the rotation.

A fourth aspect of the semiconductor manufacturing apparatus is the semiconductor manufacturing apparatus according to the first aspect, wherein the processing is etching.

A semiconductor manufacturing apparatus according to a fifth aspect is the semiconductor manufacturing apparatus according to the first aspect, characterized in that the processing is ashing.

According to a sixth aspect of the semiconductor manufacturing method of the present invention, while irradiating a particle group for processing the object to be processed while rotating the object to be processed and relatively moving in the radial direction of the object to be processed. It has a feature.

A semiconductor manufacturing method according to a seventh aspect is the semiconductor manufacturing method according to the sixth aspect, wherein the irradiation is performed while controlling at least one of the rotation speed and the movement speed.

An eighth aspect of the semiconductor manufacturing method according to the sixth aspect is that the irradiation is performed by changing the displacement distance from the object to be processed in the axial direction of the rotation.

A semiconductor manufacturing method according to a ninth aspect is the semiconductor manufacturing method according to the sixth aspect, characterized in that the processing is etching.

According to a tenth aspect of the present invention, there is provided a semiconductor manufacturing method according to the sixth aspect.
In the method for manufacturing a semiconductor, the process is ashing.

In the semiconductor manufacturing apparatus and the semiconductor manufacturing method according to the present invention, the particles to be processed are irradiated while rotating the object to be processed and relatively moving in the radial direction of the object to be processed. As a result, the entire surface of the object to be processed can be processed. Therefore, the irradiation area of the particle group may be smaller than the area of the object to be processed, and the particle group can be uniformly irradiated.

Further, by irradiating the particle group while controlling at least one of the rotational speed of the object to be processed and the relative moving speed of the object to be processed in the radial direction, the particles can be irradiated in accordance with the position of the object to be processed. Since the irradiation density of the group can be changed, the processing speed can be changed according to the position of the object to be processed.

If the beam of the particle group is not a parallel beam, by irradiating the particle group with different displacement distances from the object to be processed in the rotation axis direction of the object to be processed, the irradiation area on the object to be processed is changed. Can be changed, so the processing time can be changed.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention applied to ECR plasma etching will be described below with reference to FIG. A microwave introduction window 13 and an etching gas introduction port 14 are provided in the discharge section 12 of the etching apparatus 11 of the present embodiment, and a magnet 15 for generating a magnetic field is arranged around the discharge section 12.

The discharge section 12 is provided with a circular nozzle 16 having a diameter of 1 to 4 inches, and a reaction chamber 17 is connected to the nozzle 16. An exhaust port 18 is provided in the reaction chamber 17, and the exhaust port 18 is connected to a turbo pump (not shown) or the like. Further, a lower electrode 22 for mounting a semiconductor wafer 21 or the like which is an object to be processed is arranged in the reaction chamber 17, and a motor section 24 mounted on a stage 23 rotates and reciprocates on the lower electrode 22. Exercise.

In order to etch the film to be etched on the semiconductor wafer 21 with the etching apparatus 11 as described above,
When the distance from the center of the semiconductor wafer 21 to the nozzle 16 is r and the constant is K, the lower electrode 22 is rotated by the motor unit 24 at an angular velocity ω and is moved in the radial direction of the semiconductor wafer 21 at V = K / (rω). While doing so, the semiconductor wafer 21 is irradiated with plasma from the nozzle 16.

The irradiation area of the plasma is narrower than the area of the semiconductor wafer 21, but the nozzle 16 scans the entire surface of the semiconductor wafer 21 in a spiral manner at a uniform relative speed with respect to the semiconductor wafer 21, so that the entire film to be etched is etched. Are etched. In order to uniformly etch the entire surface of the semiconductor wafer 21, it is necessary to rotate the lower electrode 22 at a considerably high speed, which is preferably set to about 10 to 100 rpm. Especially,
Even in a short process such as formation of a through hole, the number of rotations is increased and at least two rotations are performed by the end of the process.

In the above description, the lower electrode 22 is rotated at a constant angular velocity, and the moving speed in the radial direction is changed depending on the position of the nozzle 16 on the radius of the semiconductor wafer 21, so that the nozzle for the semiconductor wafer 21 is changed. The relative speeds of 16 are made uniform on the semiconductor wafer 21.

However, if the lower electrode 22 is rotated at a constant linear velocity, the relative velocity of the nozzle 16 with respect to the semiconductor wafer 21 is made uniform on the semiconductor wafer 21 even if the radial velocity of the semiconductor wafer 21 is constant. can do.

Furthermore, by making both the angular velocity of the lower electrode 22 and the moving velocity of the semiconductor wafer 21 in the radial direction different depending on the position of the nozzle 16 on the radius of the semiconductor wafer 21, the nozzle 16 with respect to the semiconductor wafer 21 is moved. The relative speed may be uniform on the semiconductor wafer 21.

On the other hand, when the film thickness of the film to be etched is different depending on the position on the semiconductor wafer 21, the relative speed of the nozzle 16 with respect to the semiconductor wafer 21 is made different on the semiconductor wafer 21 to increase the film to be etched. It can be etched with precision. For example, when the film thickness is thicker in the peripheral portion than in the central portion of the semiconductor wafer 21 such as the SOG film formed by spin coating, the relative speed of the nozzle 16 may be reduced in the peripheral portion to increase the etching rate. it can.

Although the distance 25 between the nozzle 16 and the semiconductor wafer 21 is constant in the above description, the stage 23 is provided with an up-and-down mechanism so that the distance 25 can be changed according to preset processing conditions. It may be variable. If the plasma is radiated from the nozzle 16 as a divergent beam, the irradiation area of the plasma on the semiconductor wafer 21 can be increased by increasing the distance 25.

If the plasma irradiation area on the semiconductor wafer 21 is increased, the entire semiconductor wafer 21 can be scanned with a small number of rotations of the lower electrode 22, and the etching time can be shortened. However, if the irradiation area is increased, the uniformity of the etching in the central portion and the peripheral portion in the irradiation surface is reduced, and the etching rate is also reduced. Therefore, these are optimized as a whole to set the processing conditions.

Although the film to be etched on the semiconductor wafer 21 is etched in the above embodiments, the film to be etched on the insulating substrate may be etched or the resist or the like may be ashed with oxygen plasma. it can. Further, the invention of the present application can be applied to etching other than the ECR plasma etching shown in FIG.

For example, the distance between the plasma generating portion and the tip of the nozzle is set to about 30 cm to reduce the arrival of ions and down-flow plasma type etching for performing etching with low damage mainly by radicals and the plasma generating portion. The invention of the present application can also be applied to remote plasma type etching in which ions are prevented from reaching by setting the distance from the tip of the nozzle to 30 cm or more and etching is performed with only radicals and low damage.

Further, parallel plate plasma type etching in which a semiconductor wafer is placed on an arbitrary cathode or anode of a pair of parallel plate electrodes having a separation distance of 0.5 to 10 cm, and further, a magnetron. The invention of the present application can also be applied to etching of a type, a transformer coupled plasma (TCP) type, an inductively coupled plasma (ICP) type, a surface wave plasma (SWP) type, a helicon plasma type, and the like.

[0032]

In the semiconductor manufacturing apparatus and the semiconductor manufacturing method according to the present invention, it is possible to uniformly irradiate a particle group for processing an object to be processed, so that even an object to be processed having a large area can be uniformly processed. You can

Further, by irradiating the particle group while controlling at least one of the rotational speed of the object to be processed and the relative moving speed of the object to be processed in the radial direction, the processing is performed according to the position of the object to be processed. Since the speed can be changed, the object to be processed can be processed with high accuracy even if the required amount of processing varies depending on the position of the object to be processed.

If the beam of the particle group is not a parallel beam, the processing time can be changed by irradiating the particle group with different displacement distances from the object to be processed in the rotation axis direction of the object to be processed. Therefore, it is possible to optimize the processing uniformity and the processing time.

[Brief description of drawings]

FIG. 1 is a side sectional view showing an embodiment of the present invention.

[Explanation of symbols]

11 Etching Device 12 Discharge Section 16 Nozzle 21 Semiconductor Wafer 24 Motor Section

Claims (10)

[Claims] 1. An irradiation unit for irradiating a particle group for processing an object to be processed, a rotating unit for rotating the object to be processed, and a relative movement of the irradiation unit in a radial direction of the object to be processed. A semiconductor manufacturing apparatus comprising: a moving unit. 2. The semiconductor manufacturing apparatus according to claim 1, further comprising control means for controlling at least one of the rotation speed and the movement speed. 3. The semiconductor manufacturing apparatus according to claim 1, further comprising a displacement unit that relatively displaces the irradiation unit in the axial direction of the rotation. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the processing is etching. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the processing is ashing. 6. A method for manufacturing a semiconductor, which comprises irradiating a particle group for processing an object to be processed while rotating the object to be processed and relatively moving in a radial direction of the object to be processed. 7. The semiconductor manufacturing method according to claim 6, wherein the irradiation is performed while controlling at least one of the rotation speed and the movement speed. 8. The semiconductor manufacturing method according to claim 6, wherein the irradiation is performed by changing a displacement distance from the object to be processed in an axial direction of the rotation. 9. The semiconductor manufacturing method according to claim 6, wherein the processing is etching. 10. The semiconductor manufacturing method according to claim 6, wherein the processing is ashing.