JPS6457684A - Formation of superconducting thin film - Google Patents
Formation of superconducting thin filmInfo
- Publication number
- JPS6457684A JPS6457684A JP62212782A JP21278287A JPS6457684A JP S6457684 A JPS6457684 A JP S6457684A JP 62212782 A JP62212782 A JP 62212782A JP 21278287 A JP21278287 A JP 21278287A JP S6457684 A JPS6457684 A JP S6457684A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxygen
- superconducting thin
- plasma
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 9
- 230000015572 biosynthetic process Effects 0.000 title 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 8
- 229910052760 oxygen Inorganic materials 0.000 abstract 8
- 239000001301 oxygen Substances 0.000 abstract 8
- 238000000034 method Methods 0.000 abstract 3
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052723 transition metal Inorganic materials 0.000 abstract 2
- 150000003624 transition metals Chemical class 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
PURPOSE:To form a superconducting thin film by a process capable of compensating the short supply of oxygen for the superconducting thin film by a method wherein a thin film body to be the superconducting thin film containing transition metal and oxygen is formed and then exposed to oxygen plasma to contain oxygen. CONSTITUTION:In order to form a superconducting thin film comprising an element containing transition metal and oxygen, oxygen is contained by exposing the thin film to oxygen plasma after forming the thin film body to be said superconducting thin film. For example, a sintered body target in composition of Y0.3 Ba0.7CuO2 is mounted on a high-frequency sputtering device; an Al2O3 substrate is fixed on the opposite position to the target; a mixed gas of O2 and Ar is led in holding the surface temperature of the substrate at 200 deg.C; and a Y-Ba-Cu-O film is deposited by high-frequency glow discharge. Finally, said Y-Ba-Cu-O film is plasma-processed, after annealing process at 900 deg.C in O2 atmosphere, in a vacuum vessel held at 200 deg.C in oxygen plasma atmosphere by leading-in O2 gas and the glow discharge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62212782A JPS6457684A (en) | 1987-08-28 | 1987-08-28 | Formation of superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62212782A JPS6457684A (en) | 1987-08-28 | 1987-08-28 | Formation of superconducting thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6457684A true JPS6457684A (en) | 1989-03-03 |
Family
ID=16628298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62212782A Pending JPS6457684A (en) | 1987-08-28 | 1987-08-28 | Formation of superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6457684A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193483A (en) * | 1987-10-05 | 1989-04-12 | Kanegafuchi Chem Ind Co Ltd | Production of superconductive material |
| JPH0193484A (en) * | 1987-10-05 | 1989-04-12 | Kanegafuchi Chem Ind Co Ltd | Production of superconductive material |
| US5334680A (en) * | 1992-04-07 | 1994-08-02 | Teijin Chemicals, Ltd. | Emulsion polymerization method for a brominated styrene |
-
1987
- 1987-08-28 JP JP62212782A patent/JPS6457684A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193483A (en) * | 1987-10-05 | 1989-04-12 | Kanegafuchi Chem Ind Co Ltd | Production of superconductive material |
| JPH0193484A (en) * | 1987-10-05 | 1989-04-12 | Kanegafuchi Chem Ind Co Ltd | Production of superconductive material |
| US5334680A (en) * | 1992-04-07 | 1994-08-02 | Teijin Chemicals, Ltd. | Emulsion polymerization method for a brominated styrene |
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