JPS6457685A - Formation of superconducting thin film - Google Patents
Formation of superconducting thin filmInfo
- Publication number
- JPS6457685A JPS6457685A JP62212784A JP21278487A JPS6457685A JP S6457685 A JPS6457685 A JP S6457685A JP 62212784 A JP62212784 A JP 62212784A JP 21278487 A JP21278487 A JP 21278487A JP S6457685 A JPS6457685 A JP S6457685A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- fluorine
- superconducting thin
- plasma
- fluorine plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 8
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 8
- 239000011737 fluorine Substances 0.000 abstract 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 7
- 238000000034 method Methods 0.000 abstract 3
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052723 transition metal Inorganic materials 0.000 abstract 2
- 150000003624 transition metals Chemical class 0.000 abstract 2
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 125000001153 fluoro group Chemical group F* 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To form a superconducting thin film by a process capable of preventing fluorine from being eliminated by a method wherein a thin film body to be a superconducting thin film, containing transition metal, oxygen and fluorine, is formed and then exposed to fluorine plasma to contain fluorine. CONSTITUTION:In order to form a superconducting thin film in composition of element containing transition metal, oxygen and fluorine is contained by exposing the thin film to fluorine plasma after forming a thin film body to be said superconducting thin film. For example, a sintered target in composition of YBa3Cu9O7 is mounted on a high-frequency sputtering device; a mixed gas of O2 and Ar is led in holding the surface temperature of SrTiO3 substrate at 200 deg.C and a Y-Ba-Cu-O film is deposited by high-frequency glow discharge. Finally, said Y-Ba-Cu-O film is fluorine plasma-processed, after annealing process at 980 deg.C in O2 atmosphere, in a vacuum vessel held at 200 deg.C in fluorine plasma atmosphere by leading-in mixed gas of Ar and Fe2 as well as the glow discharge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62212784A JPS6457685A (en) | 1987-08-28 | 1987-08-28 | Formation of superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62212784A JPS6457685A (en) | 1987-08-28 | 1987-08-28 | Formation of superconducting thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6457685A true JPS6457685A (en) | 1989-03-03 |
Family
ID=16628327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62212784A Pending JPS6457685A (en) | 1987-08-28 | 1987-08-28 | Formation of superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6457685A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298085A (en) * | 1989-05-12 | 1990-12-10 | Matsushita Electric Ind Co Ltd | Manufacture of josephson device |
-
1987
- 1987-08-28 JP JP62212784A patent/JPS6457685A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298085A (en) * | 1989-05-12 | 1990-12-10 | Matsushita Electric Ind Co Ltd | Manufacture of josephson device |
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