JPS6464276A - Superconducting device - Google Patents

Superconducting device

Info

Publication number
JPS6464276A
JPS6464276A JP62220126A JP22012687A JPS6464276A JP S6464276 A JPS6464276 A JP S6464276A JP 62220126 A JP62220126 A JP 62220126A JP 22012687 A JP22012687 A JP 22012687A JP S6464276 A JPS6464276 A JP S6464276A
Authority
JP
Japan
Prior art keywords
deposited
oxide superconductor
lattice
thin film
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62220126A
Other languages
Japanese (ja)
Inventor
Juichi Nishino
Ushio Kawabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62220126A priority Critical patent/JPS6464276A/en
Publication of JPS6464276A publication Critical patent/JPS6464276A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To realize the high density integration, by forming a planar lattice defect on a lattice face of a part of crystal lattice of an oxide superconductor. CONSTITUTION:On a substrate 1, an insulating film 2 is deposited by sputtering method, and successively a thin film type oxide superconductor 3 of YBa2Cu3 O7-z is deposited by molecular beam evaporation method. Then a thin film of Ag or the like is deposited, and an oxide superconductor 5 composed of YBa2Cu3O7-z is again deposited. By heating this at a temperature of about 900 deg.C in an atmosphere of pure oxygen, lattice defect 4 is formed, and superconductivity is decreased at this part. As a result, a superconducting weak coupled element can be formed. After this is processed by chemical etching method, an insulating film 6 composed of SiO2 is formed by chemical vapor growth method, and successively processed by reactive plasma etching method using CF4 gas. Finally, lead-out electrodes 7 are formed.
JP62220126A 1987-09-04 1987-09-04 Superconducting device Pending JPS6464276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62220126A JPS6464276A (en) 1987-09-04 1987-09-04 Superconducting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62220126A JPS6464276A (en) 1987-09-04 1987-09-04 Superconducting device

Publications (1)

Publication Number Publication Date
JPS6464276A true JPS6464276A (en) 1989-03-10

Family

ID=16746317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62220126A Pending JPS6464276A (en) 1987-09-04 1987-09-04 Superconducting device

Country Status (1)

Country Link
JP (1) JPS6464276A (en)

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