JPS5538947A - Forming method of metallic compound coating - Google Patents

Forming method of metallic compound coating

Info

Publication number
JPS5538947A
JPS5538947A JP11126178A JP11126178A JPS5538947A JP S5538947 A JPS5538947 A JP S5538947A JP 11126178 A JP11126178 A JP 11126178A JP 11126178 A JP11126178 A JP 11126178A JP S5538947 A JPS5538947 A JP S5538947A
Authority
JP
Japan
Prior art keywords
sio2
metallic compound
chamber
atmosphere
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11126178A
Other languages
Japanese (ja)
Other versions
JPS5938307B2 (en
Inventor
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11126178A priority Critical patent/JPS5938307B2/en
Publication of JPS5538947A publication Critical patent/JPS5538947A/en
Publication of JPS5938307B2 publication Critical patent/JPS5938307B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To from a coating of a non-stoichiometric metallic compound of arbitrary composition simply at a high preciseness, by conducting sputtering with different sputtering rate set respectively to plural targets provided in an atmosphere of an inert gas mixed with an active gas. CONSTITUTION:Targets T1 and T2 are made of, for example, pure metal Si. The atmosphere of plasma chambers C1, C2 are composed of a mixt., for example, of Ar and O2, and the internal press. is set at 0.5-10m Torr. Application of respectively suitable target voltages to the plasma chamber C1, C2 allows to form a film of a composition near the pure metal Si in the chamber C1, and a film of a composition near the stable compound SiO2 in the chamber C2. Consequently, when the substrate holder 2 is rotated, a multilayer coating of Si-SiO2-Si-SiO2- is formed on the surface of the substrate 3, forming non-stoichiometric metallic compound depending on the ratio of total Si to total O by the diffusion between these films.
JP11126178A 1978-09-12 1978-09-12 Method of forming metal compound film Expired JPS5938307B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11126178A JPS5938307B2 (en) 1978-09-12 1978-09-12 Method of forming metal compound film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11126178A JPS5938307B2 (en) 1978-09-12 1978-09-12 Method of forming metal compound film

Publications (2)

Publication Number Publication Date
JPS5538947A true JPS5538947A (en) 1980-03-18
JPS5938307B2 JPS5938307B2 (en) 1984-09-14

Family

ID=14556707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11126178A Expired JPS5938307B2 (en) 1978-09-12 1978-09-12 Method of forming metal compound film

Country Status (1)

Country Link
JP (1) JPS5938307B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913608A (en) * 1982-07-12 1984-01-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin metallic nitride film
JPH01156465A (en) * 1987-12-11 1989-06-20 Nippon Kentetsu Co Ltd Sputtering device
JPH01298153A (en) * 1988-05-25 1989-12-01 Raimuzu:Kk Formation of laminated film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913608A (en) * 1982-07-12 1984-01-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin metallic nitride film
JPS627263B2 (en) * 1982-07-12 1987-02-16 Nippon Telegraph & Telephone
JPH01156465A (en) * 1987-12-11 1989-06-20 Nippon Kentetsu Co Ltd Sputtering device
JPH01298153A (en) * 1988-05-25 1989-12-01 Raimuzu:Kk Formation of laminated film

Also Published As

Publication number Publication date
JPS5938307B2 (en) 1984-09-14

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