JPS5538947A - Forming method of metallic compound coating - Google Patents
Forming method of metallic compound coatingInfo
- Publication number
- JPS5538947A JPS5538947A JP11126178A JP11126178A JPS5538947A JP S5538947 A JPS5538947 A JP S5538947A JP 11126178 A JP11126178 A JP 11126178A JP 11126178 A JP11126178 A JP 11126178A JP S5538947 A JPS5538947 A JP S5538947A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- metallic compound
- chamber
- atmosphere
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To from a coating of a non-stoichiometric metallic compound of arbitrary composition simply at a high preciseness, by conducting sputtering with different sputtering rate set respectively to plural targets provided in an atmosphere of an inert gas mixed with an active gas. CONSTITUTION:Targets T1 and T2 are made of, for example, pure metal Si. The atmosphere of plasma chambers C1, C2 are composed of a mixt., for example, of Ar and O2, and the internal press. is set at 0.5-10m Torr. Application of respectively suitable target voltages to the plasma chamber C1, C2 allows to form a film of a composition near the pure metal Si in the chamber C1, and a film of a composition near the stable compound SiO2 in the chamber C2. Consequently, when the substrate holder 2 is rotated, a multilayer coating of Si-SiO2-Si-SiO2- is formed on the surface of the substrate 3, forming non-stoichiometric metallic compound depending on the ratio of total Si to total O by the diffusion between these films.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11126178A JPS5938307B2 (en) | 1978-09-12 | 1978-09-12 | Method of forming metal compound film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11126178A JPS5938307B2 (en) | 1978-09-12 | 1978-09-12 | Method of forming metal compound film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5538947A true JPS5538947A (en) | 1980-03-18 |
JPS5938307B2 JPS5938307B2 (en) | 1984-09-14 |
Family
ID=14556707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11126178A Expired JPS5938307B2 (en) | 1978-09-12 | 1978-09-12 | Method of forming metal compound film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5938307B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5913608A (en) * | 1982-07-12 | 1984-01-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of thin metallic nitride film |
JPH01156465A (en) * | 1987-12-11 | 1989-06-20 | Nippon Kentetsu Co Ltd | Sputtering device |
JPH01298153A (en) * | 1988-05-25 | 1989-12-01 | Raimuzu:Kk | Formation of laminated film |
-
1978
- 1978-09-12 JP JP11126178A patent/JPS5938307B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5913608A (en) * | 1982-07-12 | 1984-01-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of thin metallic nitride film |
JPS627263B2 (en) * | 1982-07-12 | 1987-02-16 | Nippon Telegraph & Telephone | |
JPH01156465A (en) * | 1987-12-11 | 1989-06-20 | Nippon Kentetsu Co Ltd | Sputtering device |
JPH01298153A (en) * | 1988-05-25 | 1989-12-01 | Raimuzu:Kk | Formation of laminated film |
Also Published As
Publication number | Publication date |
---|---|
JPS5938307B2 (en) | 1984-09-14 |
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