JPH01156465A - Sputtering device - Google Patents

Abstract

PURPOSE:To easily form a homogeneous film of a required thickness by dividing a vacuum chamber into a film formation chamber and a reaction chamber, controlling conditions in the chambers and reciprocating a substrate between the chambers. CONSTITUTION:A vacuum chamber 1 is divided into a film formation chamber 8 and a reaction chamber 5 with a partition wall 4. A substrate 6 on a turntable 2 is heated to a film formation temp. and moved to a position above a target electrode 7 and a layer is formed. The substrate 6 is then moved to the reaction chamber 5 and the layer is allowed to react with gas uniformly blown from a nozzle 14. At this time, the substrate 6 is controlled to a temp. corresponding to the reaction temp. After the end of the reaction, the turntable 2 is turned to return the substrate 6 to the film formation position and the next one layer is formed. The layer is allowed to react with gas in the reaction chamber 5. This operation is repeated until a film of a prescribed thickness is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a sputtering apparatus for forming thin films of various substances on a substrate in vacuum.

[Prior Art] A sputtering device places two electrodes facing each other in a vacuum chamber, introduces Ar gas, and applies a DC or RF voltage between the electrodes to generate plasma, which causes the material attached to the cathode electrode to (target) is struck with Ar ions and formed into a thin film on the substrate attached to the anode side electrode. At this time, if O2, N2, or other reactive gas is mixed with Ar gas, an oxide or nitride film can be formed, which is called one-reaction sputtering.

[Problems to be solved by the invention] In conventional reactive sputtering, when sputtering a compound into a film, depending on the film-forming temperature, the film may decompose and required film components may not be obtained. Even if these are introduced at the same time, the desired components cannot be obtained because the film formation temperature and the reaction temperature are different. In this case, it becomes necessary to carry out a separate reaction treatment after the film formation is completed. Furthermore, since the reaction is carried out from the surface after the film has been formed to a predetermined thickness, there is a problem that the reaction occurs only on the surface, making it difficult to obtain a uniform film. This method was developed to solve the problems of the conventional method, and makes it possible to easily obtain a uniform film having the required thickness.

[Means for Solving the Problems] A sputtering apparatus according to the present invention partitions a vacuum chamber into a film forming chamber and a reaction chamber, is provided with a substrate holding holder that can be moved between the two, and is provided with a substrate holding holder that can be moved between the film forming chamber and the reaction chamber. Equipped with an exhaust system, pressure control system, and gas supply system separately from the room.
The substrate is moved back and forth between the film formation chamber and the reaction chamber while controlling the conditions for film formation and gas reaction to repeatedly perform film formation and gas reaction.

[Operation] In the sputtering apparatus according to the present invention, the substrate is moved back and forth between the film forming chamber and the reaction chamber, where the reaction conditions are independently controlled, and the film formation and gas reaction are repeated, so that a very thin homogeneous film can be formed. It is possible to form a film by laminating layers, and it is possible to easily create a homogeneous film of the required thickness.

[Embodiment of the Invention] An embodiment of the sputtering apparatus according to the present invention will be described below with reference to the drawings.

(2) is a disc-shaped rotary table installed in the vacuum chamber (1) to which the substrate is attached;
is driven by a motor (3) and can be stopped at a controlled position. (4) is a partition wall that partitions a part of the vacuum chamber (1), and this partition! (4)
A reaction chamber (5) is formed. This partition wall (4)
is provided so as to enclose a part or half of the rotary table (2), and this part (portion A in the figure) is close to the rotary table (2). As shown in detail in Fig. 2, the A section is not in contact but has the smallest gap (1) that does not impede rotation, and is close to the rotary table (2) over a width (H) in the radial direction to prevent reaction. The chamber (5) and the outside have a structure that produces a large conductance.

(6) is a board attached on the circumference of the rotary table (2), and this board (6) can be connected between the reaction chamber (5) and the vacuum chamber in the outer part by rotating the rotary table (2). can be moved.

A target electrode (7), which is a film-forming material, is placed opposite the position of the part where the substrate (6) exits the reaction chamber (5) to form a film-forming chamber (8).

Separate vacuum pumps (9) (10) and pressure adjustment valves (11) (12) are installed in the reaction chamber (5) and film forming chamber (8).
), and the pressure P1 in the reaction chamber (5) is the same as that in the film forming chamber (
The pressure P2 is controlled to be greater than the pressure P2 of 8). This is to prevent the thin film-forming substance ejected from the target electrode from colliding with gas molecules and reducing the film-forming speed if the pressure in the film-forming chamber is high. In addition, each reaction gas,
The film-forming gas can be controlled and supplied.

The part of the rotary table (2) where the board (6) is attached is
A heater (13) is provided to heat the substrate (6), and the position to which the rotary table (2) is rotated and moved is detected from the rotary shaft and controlled by changing the temperature to different temperatures.

In such an apparatus, first of all, a substrate (6) is heated to a film forming temperature on a rotary table (2), and then moved onto a target electrode (7) where plasma is generated to perform further film formation 111A. . Next, immediately move to the reaction chamber (5) and use the nozzle (
14) Apply gas uniformly and react. At this time, the temperature of the substrate (6) is controlled to correspond to the gas reaction. After being maintained in this state for a period of time to complete the reaction, the rotary table (2) is rotated and the substrate (6) is returned to the deposition position, the next layer is deposited, and then the reaction chamber (5) is returned to the deposition position. This process is repeated until a predetermined film thickness is reached.

In this case, the 1-rotation table (2) can be controlled to stop at the film-forming position and in the reaction chamber (5) for a predetermined time as described above, and repeatedly while being continuously moved by controlling the rotational movement speed. You can find a way to do it.

In conventional reactive sputtering equipment, the reactive gas is simultaneously supplied into the plasma for sputtering film formation.
It has the advantage of being sufficiently ionized and reacting easily. In this invention, although the gases are not supplied simultaneously, the reaction can be accelerated by connecting a power source between the supply nozzle (14) and the substrate (6) to generate plasma when supplying the gases in the reaction chamber.

[Effects of the Invention] In this invention, the film to be formed is formed by stacking very thin homogeneous films with completely controlled reactions, so it is possible to form a homogeneous film with a predetermined thickness. It can be obtained easily.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram showing an embodiment of the present invention, and FIG. 2 is an enlarged view showing details of section A in FIG. 1. In the figure, (1) is a vacuum chamber, (2) is a rotary table, and (4)
is a partition wall, (5) is a reaction chamber, (6) is a substrate [(8) is a film forming chamber, (9) (10) is a vacuum pump, (11) (12)
) is a pressure regulating valve.

Claims (4)

[Claims] (1) The inside of the vacuum chamber is divided into a film-forming chamber and a reaction chamber by a partition wall, and a substrate holding holder that can be moved between them is provided, and the film-forming chamber and reaction chamber have separate exhaust systems and pressure A sputtering device that is equipped with a control system and a gas supply system, and repeatedly performs film formation and gas reaction by moving the substrate back and forth between the film formation chamber and the reaction chamber while controlling the conditions for film formation and gas reaction. (2) The sputtering apparatus according to claim 1, wherein the substrate holding holder to which the substrate is attached is a rotating table, and by rotating the rotating table, the film forming section and the reaction section are moved back and forth. . (3) A pressure difference is provided between the pressure P_1 in the reaction chamber and the pressure P_2 in the film-forming chamber, and P_1>P_2 is set in Claim 1.
The sputtering device described in Section 1. (4) The area adjacent to the rotary table and the partition wall has a minimum gap so as to maintain a pressure difference, and a sufficient width is provided in this gap to increase conductance and seal the area. The sputtering device described in Section 1.