JPH02115365A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPH02115365A JPH02115365A JP26874288A JP26874288A JPH02115365A JP H02115365 A JPH02115365 A JP H02115365A JP 26874288 A JP26874288 A JP 26874288A JP 26874288 A JP26874288 A JP 26874288A JP H02115365 A JPH02115365 A JP H02115365A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- target
- sputtered
- rotating
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title abstract description 19
- 239000002245 particle Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 abstract 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- -1 Argon ions Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明はスパッタ装置に関するものである。[Detailed description of the invention] [Industrial application field] This invention relates to a sputtering device.
第６図は従来のスパッタ装置を示す。第６図において、
チャンバ１をアースし、ターゲット２と、ウェハ４をの
せたサセプタ３との間にアルゴンカ、スを導入し、高周
波スパッタリングを行うために整合回路９によりインピ
ーダンスマツチングラトリ、高周波電力が育効に装置内
に注入されるようにして、高周波電源８のスイッチを入
れる。プラズマ中のアルゴンイオンはターゲット２に衝
突し、ターゲット２から粒子が放出（スパッタ）される
。FIG. 6 shows a conventional sputtering apparatus. In Figure 6,
The chamber 1 is grounded, argon gas is introduced between the target 2 and the susceptor 3 on which the wafer 4 is placed, and the impedance matching circuit 9 is used to perform impedance matching and high frequency power is applied to the growth effect in order to perform high frequency sputtering. The high frequency power source 8 is turned on so that the liquid is injected into the air. Argon ions in the plasma collide with the target 2, and particles are emitted (sputtered) from the target 2.
スパッタされたアルミ２５の粒子は第７図に示すように
スパッタ粒子の方向がバラバラなので、ヴイアホール２
６の被覆性は悪い。なお、第７図において、２１はシリ
コン基板、２２は５ｉ０２膜、２３はＡＩ膜、２４はＳ
ｉ ０２ Ｍである。As shown in FIG. 7, the sputtered aluminum 25 particles have different directions, so the via hole 2
The coverage of No. 6 was poor. In FIG. 7, 21 is a silicon substrate, 22 is a 5i02 film, 23 is an AI film, and 24 is an S
i 02 M.
従来のスパッタ装置はターゲットとウェハ間にプラズマ
を形成し、スパッタを行っていたため、スパッタ粒子の
ウェハへのデボ（堆積）角度を制御することは困難であ
り、ヴイアホールなどにカバレージ良く堆積できないな
どの問題点があった。Conventional sputtering equipment performs sputtering by forming plasma between the target and the wafer, which makes it difficult to control the deposition angle of the sputtered particles onto the wafer, resulting in problems such as not being able to deposit them with good coverage in via holes, etc. There was a problem.
この発明は上記のような問題点を解消するためになされ
たもので、スパッタ粒子のウェハへのデポ角度を自由に
変更できるスパッタ装置を得ることを目的とする。This invention was made to solve the above-mentioned problems, and an object of the present invention is to provide a sputtering apparatus that can freely change the angle at which sputtered particles are deposited onto a wafer.
この発明に係るスパッタ装置はターゲットトウエバ間に
スパッタ粒子の方向を制御する筒を設け、この筒を通過
できた粒子のみをデポするようにし、その際ウェハを回
転させ、かつサセプタを斜め回転させるようにしたもの
である。In the sputtering apparatus according to the present invention, a tube is provided between the target to web bars to control the direction of the sputtered particles, and only the particles that have passed through the tube are deposited. At this time, the wafer is rotated and the susceptor is rotated diagonally. This is how it was done.
この発明におけるスパッタ装置では、筒を通じてスパッ
タを行うようにしたので、均一な方向を持つスパッタ粒
子を堆積でき、さらにウェハ及びサセプタを斜め回転さ
せることにより、ヴイアホールなどを被覆性良く堆積す
ることができる。In the sputtering apparatus according to the present invention, since sputtering is performed through the tube, sputter particles can be deposited in a uniform direction, and by rotating the wafer and susceptor diagonally, it is possible to deposit via holes etc. with good coverage. .
以下、この発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例によるスパッタ装置を示し、
図において、１はチャンバ、２はターゲット、３はサセ
プタ、４はウェハ、５はスパッタ粒子、６はシールド板
、７はマグネット、８はＲＦ′！ｔ１ｍ、９は整合回路
、１ｏは蜂の巣形筒（方向制御器）、１１はユニバーサ
ルシロインド、１２はカム支持台、１３はカム、１４は
カムフォロア、１５は駆動装置（モータ）、１６はギヤ
、１７は筒支持台である。FIG. 1 shows a sputtering apparatus according to an embodiment of the present invention,
In the figure, 1 is a chamber, 2 is a target, 3 is a susceptor, 4 is a wafer, 5 is a sputtered particle, 6 is a shield plate, 7 is a magnet, and 8 is RF'! t1m, 9 is a matching circuit, 1o is a honeycomb cylinder (directional controller), 11 is a universal cylinder, 12 is a cam support, 13 is a cam, 14 is a cam follower, 15 is a drive device (motor), 16 is a gear, 17 is a cylinder support stand.
次に動作について説明する。Next, the operation will be explained.
チャンバ１をアースにし、ターゲットと蜂の巣形筒１０
の間にアルゴンガスを導入し、整合回路９によりインピ
ーダンスマツチングをとり、高周波（ＲＦ）電源１０の
スイッチを入れ、プラズマ化する。但しここで、ターゲ
ットは導体でも絶縁物でも良い。今、仮にアルミを用い
る場合を考えると、プラズマ中の正のアルゴンイオンは
ターゲットに衝突し、アルミをスパッタする。放出され
たアルミ粒子５は角度分布をもっている。そこで、第２
図に示すような蜂の巣形（細い管の集合体であり、形状
は四角でも円筒でも良い）の筒１０を設けることにより
、ターゲット２からほぼ垂直にスパッタされた粒子５だ
けを取り出し、残りを筒１０の側壁にトラップさせる。The chamber 1 is grounded, the target and the honeycomb cylinder 10
During this period, argon gas is introduced, impedance matching is performed by a matching circuit 9, and a radio frequency (RF) power source 10 is turned on to generate plasma. However, here, the target may be a conductor or an insulator. Now, assuming that aluminum is used, positive argon ions in the plasma collide with the target and sputter aluminum. The ejected aluminum particles 5 have an angular distribution. Therefore, the second
By providing a honeycomb-shaped tube 10 (which is a collection of thin tubes, and the shape may be square or cylindrical) as shown in the figure, only the particles 5 that have been sputtered almost vertically from the target 2 are taken out, and the rest are removed from the tube. Trap it on the side wall of 10.
このようにして、方向制御されたアルミ粒子５を形成す
る。次にサセプタ３を斜め回転させる方法であるが、モ
ータ１５を２台用意する。１つ（１５ａ）はサセプタ３
を回転させるものであり、もう１つ（１５ｂ）はカム１
３を回転させるもので、それぞれ歯車１６によって連結
されている。今、モータ１５ａを回転させ、歯車１６を
通じて回転軸を通じてサセプタ３を回す。サセプタ３か
らは３つの足がカム１３につながっており、カムフォロ
ア１４はカム１３の溝に沿って動くことにより、上下動
を引き起こ曇立ミし、サセプタ３の斜め回転を可能とす
る。但し、サセプタ３の回転と上下動をスムーズにする
ためにユニバーサルシロインド１１が必要である。カム
１３が固定されている場合にはサセプタ３の上昇（下降
）場所が一定である。そこで、モータ１５ｂによりカム
１３を回転させることにより、自由に斜め回転させるこ
とが可能となる。In this way, directionally controlled aluminum particles 5 are formed. Next, for the method of obliquely rotating the susceptor 3, two motors 15 are prepared. One (15a) is the susceptor 3
The other one (15b) is the cam 1.
3, which are connected by gears 16. Now, the motor 15a is rotated, and the susceptor 3 is rotated through the gear 16 and the rotating shaft. Three legs from the susceptor 3 are connected to a cam 13, and the cam follower 14 moves along the groove of the cam 13 to cause vertical movement and clouding, thereby enabling the susceptor 3 to rotate diagonally. However, the universal cylinder 11 is required to ensure smooth rotation and vertical movement of the susceptor 3. When the cam 13 is fixed, the location where the susceptor 3 rises (descends) is constant. Therefore, by rotating the cam 13 with the motor 15b, it becomes possible to freely rotate the cam 13 diagonally.
このようにして斜め回転させることにより、第３図に示
すように、グイアホール２６に被覆性良くスパッタする
ことができる。By rotating obliquely in this manner, the guia holes 26 can be sputtered with good coverage, as shown in FIG.
なお、上記実施例ではサセプタ全体を斜め回転させたが
、第４図の本発明の他の実施例に示すように、サセプタ
を回転及び斜め回転させる手段主をウェハごとに設け、
サセプタをウェハごとに歳差運動（コマの動き）させる
ように駆動しても良い。ここで斜め回転の機構は上記実
施例と同じである。なお、図中３０はベアリングである
。In the above embodiment, the entire susceptor was rotated obliquely, but as shown in another embodiment of the present invention shown in FIG. 4, a means for rotating and obliquely rotating the susceptor is provided for each wafer.
The susceptor may be driven to precess (move in frames) for each wafer. Here, the diagonal rotation mechanism is the same as in the above embodiment. Note that 30 in the figure is a bearing.
また、サセプタをスパッタ粒子に対し斜め回転させる手
段としては、第５図の本発明のさらに他の実施例に示す
ように、筒１０を斜めにするようにしてもよく、この実
施例では空気圧シリンダ３０を３本設け、制御回路３１
を経てコンプレッサ３２により該空気圧シリンダの空気
圧を変化させ、ピストン３３を上下させて、筒１０を斜
めにするようにしている。但し、筒１０とピストン３３
のジーインド部にはピボット３４を設ける。Further, as a means for rotating the susceptor obliquely with respect to the sputtered particles, the cylinder 10 may be made oblique as shown in still another embodiment of the present invention shown in FIG. 30 are provided, and the control circuit 31
The compressor 32 then changes the air pressure in the pneumatic cylinder to move the piston 33 up and down, thereby making the cylinder 10 oblique. However, the cylinder 10 and the piston 33
A pivot 34 is provided in the gee-ind part.
また以上の実施例ではプラズマ形成方法として、高周波
を使用したが、直流二極放電を利用したり、あるいは蒸
着速度を増すためにマグネトロンを併用したりしても良
い。Further, in the above embodiments, high frequency waves were used as the plasma forming method, but direct current bipolar discharge may be used, or a magnetron may be used in combination to increase the deposition rate.
以上のようにこの発明によれば、スパッタ装置において
サセプタを斜め回転させる手段を設け、スパッタ粒子の
方向を一定にし、さらにウェハを回転させると同時にサ
セプタを斜め回転させるようにしたので、ヴイアホール
などに良好なカバレージを存する、即ち被覆性の良いス
パッタ膜を堆積することが可能となる効果がある。As described above, according to the present invention, a means for obliquely rotating the susceptor is provided in the sputtering apparatus to keep the direction of sputtered particles constant, and the susceptor is also rotated obliquely at the same time as the wafer is rotated. This has the effect of making it possible to deposit a sputtered film that has good coverage, that is, has good coverage.
第１図は本発明の一実施例によるスパッタ装置の断面側
面図、第２図は上記実施例の方向制御用の筒の斜視図、
第３図は上記実施例により形成される半導体装置の断面
図、第４図、第５図はこの発明の他の実施例によるスパ
ッタ装置を示す図、第６図、第７図は従来例によるスパ
ッタ装置を説明する図である。
１はチャンバ、２はターゲット、３はサセプタ、４はウ
ェハ、５はプラズマ、６はシールド板、７はマグネット
、８は高周波電源、９は整合回路、１０は方向制御用の
筒、１０は蜂の巣形筒（方向制御器）、１１はユニバー
サルジ日インド、１２は力、ム支持台、１３はカム、１
４はカムフォロア、１５駆動装置（モータ）、１６はギ
ヤ、１７は筒支持台である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a cross-sectional side view of a sputtering apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view of a direction control cylinder of the above embodiment,
FIG. 3 is a sectional view of a semiconductor device formed according to the above embodiment, FIGS. 4 and 5 are views showing a sputtering apparatus according to another embodiment of the present invention, and FIGS. 6 and 7 are according to a conventional example. FIG. 2 is a diagram illustrating a sputtering apparatus. 1 is a chamber, 2 is a target, 3 is a susceptor, 4 is a wafer, 5 is a plasma, 6 is a shield plate, 7 is a magnet, 8 is a high frequency power supply, 9 is a matching circuit, 10 is a cylinder for direction control, 10 is a honeycomb shape cylinder (direction controller), 11 is a universal diagonal, 12 is a force, a support base, 13 is a cam, 1
4 is a cam follower, 15 is a drive device (motor), 16 is a gear, and 17 is a cylinder support base. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
られた、スパッタ粒子の方向を一定にするための筒と、 前記半導体ウェハを回転させる手段と、 前記半導体ウェハを回転させながら前記サセプタをスパ
ッタすべきターゲットに対し斜め回転させる手段とを備
えたことを特徴とするスパッタ装置。[Claims] 1) A susceptor on which a semiconductor wafer is placed; a cylinder provided between a target to be sputtered and the susceptor for keeping sputtered particles in a constant direction; and a cylinder for rotating the semiconductor wafer. and means for rotating the susceptor obliquely with respect to a target to be sputtered while rotating the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63268742A JPH0772345B2 (en) | 1988-10-25 | 1988-10-25 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63268742A JPH0772345B2 (en) | 1988-10-25 | 1988-10-25 | Sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02115365A true JPH02115365A (en) | 1990-04-27 |
| JPH0772345B2 JPH0772345B2 (en) | 1995-08-02 |
Family
ID=17462712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63268742A Expired - Lifetime JPH0772345B2 (en) | 1988-10-25 | 1988-10-25 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0772345B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04143274A (en) * | 1990-10-05 | 1992-05-18 | Shinku Kikai Kogyo Kk | Thin film forming device |
| US11056323B2 (en) * | 2017-11-01 | 2021-07-06 | Ulvac, Inc. | Sputtering apparatus and method of forming film |
| CN114774849A (en) * | 2022-03-17 | 2022-07-22 | 西安超纳精密光学有限公司 | Small-caliber large-curvature local ion sputtering coating system and method capable of accurately controlling curvature |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61243167A (en) * | 1985-04-17 | 1986-10-29 | Anelva Corp | Sputtering device |
| JPS62199768A (en) * | 1986-02-27 | 1987-09-03 | Agency Of Ind Science & Technol | Thin film forming device |
| JPS62250171A (en) * | 1986-04-23 | 1987-10-31 | Hitachi Ltd | Film forming method |
| JPS63108512A (en) * | 1986-10-24 | 1988-05-13 | Yamaha Corp | Manufacture of thin film magnetic head |
| JPS63310965A (en) * | 1987-06-11 | 1988-12-19 | Anelva Corp | Sputtering device |
-
1988
- 1988-10-25 JP JP63268742A patent/JPH0772345B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61243167A (en) * | 1985-04-17 | 1986-10-29 | Anelva Corp | Sputtering device |
| JPS62199768A (en) * | 1986-02-27 | 1987-09-03 | Agency Of Ind Science & Technol | Thin film forming device |
| JPS62250171A (en) * | 1986-04-23 | 1987-10-31 | Hitachi Ltd | Film forming method |
| JPS63108512A (en) * | 1986-10-24 | 1988-05-13 | Yamaha Corp | Manufacture of thin film magnetic head |
| JPS63310965A (en) * | 1987-06-11 | 1988-12-19 | Anelva Corp | Sputtering device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04143274A (en) * | 1990-10-05 | 1992-05-18 | Shinku Kikai Kogyo Kk | Thin film forming device |
| US11056323B2 (en) * | 2017-11-01 | 2021-07-06 | Ulvac, Inc. | Sputtering apparatus and method of forming film |
| CN114774849A (en) * | 2022-03-17 | 2022-07-22 | 西安超纳精密光学有限公司 | Small-caliber large-curvature local ion sputtering coating system and method capable of accurately controlling curvature |
| CN114774849B (en) * | 2022-03-17 | 2023-12-08 | 西安超纳精密光学有限公司 | Small-caliber large-curvature local ion sputtering coating system and method capable of accurately controlling curvature |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0772345B2 (en) | 1995-08-02 |
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